EG8025 For Sine Wave Inverter DatasheetV1.2
EG8025 For Sine Wave Inverter DatasheetV1.2
EG8025 Datasheet
Single Phase SPWM controller
Revision History
Version Date Description
V1.0 2019-10-12 Creation
Contents
Contents ....................................................................................................................................................................... 3
1. Features................................................................................................................................................................ 5
2. Description........................................................................................................................................................... 7
3. Applications ......................................................................................................................................................... 7
4. Pinouts ................................................................................................................................................................. 8
4.1 Pin map ................................................................................................................................................ 8
4.2 Pin Descriptions ................................................................................................................................... 9
5. Block Diagram ................................................................................................................................................... 13
5.1 EG8025 Block Diagram..................................................................................................................... 13
5.2 System Block Diagram Based on EG8025+EG1611 ......................................................................... 14
6. Typical Application Schematic .......................................................................................................................... 14
6.1 EG8025 DC to AC Driver Board Schematic ..................................................................................... 14
6.2 1KW Main Board Schematic of Power Inverter for 12VDC/220VAC .............................................. 15
6.3 1KW Main Board Schematic of Power Inverter for 24VDC/220VAC .............................................. 15
6.4 1KW Main Board Schematic of Power Inverter for 48VDC/220VAC .............................................. 16
6.5 EG1611+EG3002 Driver Board Schematic for 12VDC Input........................................................... 16
6.6 EG1611+EG2132 Driver Board Schematic for 24VDC and 48VDC Input ...................................... 17
7. Electrical Characteristics ................................................................................................................................... 18
7.1 Absolute maximum ratings ................................................................................................................ 18
7.2 Typical ratings.................................................................................................................................... 19
8. Detailed Description .......................................................................................................................................... 22
8.1 PWM Modulation .............................................................................................................................. 22
8.2 AC Output Voltage Feedback ............................................................................................................ 22
8.3 AC Output Current Feedback ............................................................................................................ 24
8.4 Temperature Feedback ....................................................................................................................... 25
8.5 DC bus Voltage Feedback .................................................................................................................. 25
8.6 Dead Time Setting ............................................................................................................................. 26
8.7 H-Brdige Control Signal Interchange ................................................................................................ 27
9. Protections ......................................................................................................................................................... 29
9.1 Over Load Protection ......................................................................................................................... 29
9.2 Over Load Protection ......................................................................................................................... 29
9.3 Over Voltage and Under Voltage Protection for DC Bus ................................................................... 29
9.4 Over Temperature Protection for PCB Board .................................................................................... 29
9.5 Over Temperature Protection for IGBT/MOSFET ............................................................................ 29
9.6 Short Circuit Protection for Output.................................................................................................... 30
9.7 Peak Current Protection for IGBT/MOS ........................................................................................... 30
10. Multiple Inverter Applications ................................................................................................................... 31
10.1 Diagram of Inverter in Parallel .......................................................................................................... 31
10.2 Diagram of Group Three-Phase Four-Wire Inverter .......................................................................... 32
11. Test Mode .................................................................................................................................................. 33
12. UART Serial Ports ..................................................................................................................................... 34
2. Description
EG8025 is a digital pure sine wave inverter ASIC (Application Specific Integrated Circuit) that
uses current-mode SPWM controlling, center-aligned PWM modulation and built-in two 600V half
bridge gate drivers, which is dedicated to power inverter products.
EG8025 is a CMOS IC that integrates SPWM sinusoid generator, dead time control circuit,
output voltage and output current feedback circuit, protection circuit, UART serial communication,
and etc.
EG8025 is available in an 80-Pin LQFP80 package, requiring a minimum number of external
components to implement power inverter functions.it has high output voltage accuracy, output
harmonic distortion is less than 1.5% at light load, and output harmonic distortion is less than 3% at
heavy load, which can meet the waveform requirement of the inverter products.
Integrated with two 600V half bridge gate drivers, +2A source/-2A sink output current
capability per channel. Built in four independent cycle by cycle edge-triggered shutdown logic,
which can effectively prevent excessive peak current damaging IGBT/MOSFET in extreme cases.
Built in two SD pins SD1 and SD2, and SD1 is shutdown input pin of gate driver 1 for HO1 and LO1,
and SD2 is shutdown input pin of gate driver 2 for HO2 and LO2,which can be implemented short
circuit protection by SD1 and SD2 pins.
EG8025 provides various protection functions, such as over voltage and under voltage for DC
bus, over load, over current, over temperature, short circuit, and etc.
EG8025 provides two UART serial ports. User can set parameters or reset AC output through
the UART serial ports, and can also read the running status and related data of inverter through the
UART serial ports.
EG8025 supports the function of group three-phase inverter, which is through AC zero-crossing
signal output and synchronous phase signal input, as well as ZC(zero-crossing) signal cascade and
optocoupler isolator circuit.
3. Applications
Single-Phase sinusoid inverter
Three-Phase sinusoid inverter
UPS(Uninterruptible power supply)
Solar power generation inverter
Wind power generation inverter
Digital generator
Energy storage power
4. Pinouts
4.1 Pin map
FAN_RPM_IN
FAN_PWM
SDHIN1
SDLIN2
AMP02
PVDD
AINN2
AINP2
COM2
PVCC
PVCC
HO1
VB1
VS1
SD2
LO2
NC
NC
NC
NC
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
NC 61 40 PVCC
SDHIN2 62 39 LO1
VS2 63 38 COM1
HO2 64 37 SDLIN1
VB2 65 36 GND
NC 66 35 SD1
NC 67 34 AMP01
NC 68 33 AINN1
PVDD 69 32 AINP1
PVCC 70 31 OSCOUT
Reserved 72 29 IFB1N
Reserved 73 28 IFB1P
IFB_REF 74 27 LEDG
Reserved 75 26 LEDR
RXD1 76 25 IFB2N
TXD1 77 24 IFB2P
IFB_IN 78 23 Reserved
FWDCK 79 22 TXD0
FWDAT 80 21 RXD0
10
11
12
13
14
15
16
17
18
19
20
1
VDC_IN
GND
TFB2
RSTN
VDD
TFB1
LDO15
Test_Mode
AC_RST
DT0
VAC_FB
AC_Fout
Hbridge_Mode
DT1
Reserved
Phase_SEL
FRQSEL
Multi_INV
VZC_IN
SST
5. Block Diagram
5.1 EG8025 Block Diagram
VB2
High Side 65
Drive Outputs HO2
64
24 IFB1P
SD
SDHIN2
62
Curre nt
Ampli fie r1
SPWM4
L CMP
25 IFB1N
O 200mV
VS2
SPWM G 63
I Low Side
LO2
IFB2P Output C Drive Outputs 59
28 Curre nt
Ampli fie r2 SD
SDLIN2 57
IFB2N SPWM3 CMP
29
COM2
58
200mV
Feedback &
18
VAC_FB(AC Voltage Feedback) Protection OPamp AMP 02
55
TFB1(Temperature Feedback 1)
AINP2
53
9 AINN2
54
Dead Ti me SD2
TFB2(Temperature Feedback 2) Generator 56
10 Gate Driver 2
VFB
V1 V3 S1 S3
2HO 1HO
VFB
UART Voltage Voltage Sense -
D14 D16
Serial Port Amplifier
Gate SDH1
Sense
T1 Driver 2 RS1 RS3
12V Battery Voltage HO1 HO2 +
SDL2
Sense - L2
PWM1 PWM1
EG2132 EG2132 2LO
S2 S4
+ SDH1 AC Output
- Port
Output Voltage LO1 LO2
Current Current Short Gate 1LO
&Current Sense Circuit
Sense Sense Driver 1
Amplifier1 Amplifier2 Protection +
SDL1
V2 V4 - SDL1
1LO
D15 D17 RS2 RS4
R3
GND1
VOUT VIN
GND
6.6 EG1611+EG2132 Driver Board Schematic for 24VDC and 48VDC Input
VOUT VIN
GND
Figure 6-6. 24V and 48V Boost Stage Driver Board Application Schematic
7. Electrical Characteristics
7.1 Absolute maximum ratings
Maximum
Voltage
IFB1P,IFB1N Input for AC VDD=5V - 320 mV
Current
Feedback 1
Maximum
Voltage
IFB2P,IFB2N Input for AC VDD=5V - 320 mV
Current
Feedback 2
Over
TFB1 Temperature VDD=5V - 3.3 - V
input 1
Over
TFB2 Temperature VDD=5V - 3.3 - V
input 1
Under
Voltage and
VDC-IN Over Voltage VDD=5V 1.8 - 2.8 V
Input for DC
Bus
UART Ports
Vout(H)
Output High VDD=5V, IOH=-10mA 3.5 5.0 - V
Voltage
TXD0,TXD1
Vout(L)
Output Low VDD=5V, IOL=10mA - 0 0.3 V
Voltage
Vin(H)
Input High
VDD=5V 3.0 5.0 5.5 V
Voltage
Level
RXD0,RXD1
Vin(L)
Input High
VDD=5V -0.3 0 1 V
Voltage
Level
Control
Vout(H)
LEDR,LEDG,AC_Fout Output High VDD=5V, IOH=-10mA 3.5 5.0 - V
Voltage
8. Detailed Description
8.1 PWM Modulation
EG8025 works in center-aligned PWM modulation mode with fixed switching frequency of
20KHz. The advantage is that switching frequency on the H-bridge is 20KHz, while the switching
frequency on output inductor and output capacitor is twice(40KHz) the switching frequency.
Compared with traditional inverters using the unipolar or bipolar modulation, the size of capacitors
and inductors can be reduced.
EG8025 uses instantaneous voltage feedback SPWM control technology, and waveform of the
output is instantaneously regulated(every PWM cycle 50uS) by the comparison of the instantaneous
voltage feedback with a sinusoidal reference. Compared with traditional single voltage-mode SPWM
control, the EG8025 has advantages of the high output voltage accuracy and the fast dynamic
response, and output harmonic distortion is less than 3% at heavy load.
The sinusoidal reference voltage in the EG8025 consists of an sine wave amplitude of 1.36V and
a DC offset of 1.65V.
EG8025’s voltage feedback process is through measuring AC voltage output of inverter by
pins(53,54,55)VAC_FB. For such voltage sampling and feedback circuit shown in Fig 8.2a and Fig
8.2b, it calculates the error between measured output voltage and sinusoid reference voltage, and
adjusts the output voltage accordingly.
EG8025 uses an external resistor network consisting of differential amplifier for output voltage
feedback as shown in Fig 8.2a. Note the external resistance must be satisfied that (R39+R34) equals
(R38+R35) and (R28 // R32) equals (R27 // R31). ( Notes: Here the symbol // means parallel.)
For inverter of output voltage 230V, the application circuit is shown in Fig 8.2a.
The following formals are a reference design for setting output voltage.
Step1、Calculates the DC offset of OPamp output
Vout_DC= R 27R+31R 31 x 5V=5.1K/15.1K x 5V≈1.68V(As Fig 8.2a).
According to the above formals, it is a scaled down amplifier with a ratio of 1/240.
For 230V AC output voltage with 325V amplitude, the output voltage of OPamp is equal to
VAC_FB=Vout_DC+Vout_AC=1.68V+1.35V=3.03V. it will feedback to pin 18 of VAC_FB. after
calculating the error, then adjusts the output voltage accordingly.
R 32 1 0K
55 18
R 39 5 10 K R 34 3 00 K
54
ACL
R 38 5 10 K R 35 3 00 K
OPamp
53
ACN EG8025
R 27 1 0K
AC O ff s et : 1. 6 5V
+5V A mp l it u de : 1. 3 6V
F re q ue n cy : 50 H z/ 6 0H z
R 31
5 .1 K
Figure 8.2a The Feedback Network of AC Output Voltage for 230V Inverter
For inverter of output voltage 120V, the application circuit is shown in Fig 8.2b.
The following formals are a reference design for setting output voltage.
Step1、Calculates the DC offset of OPamp output
Vout_DC= R 27R+31R 31 x 5V=5.1K/15.1K x 5V≈1.68V(As Fig 8.2b).
According to the above formals, it is a scaled down amplifier with a ratio of 1/240.
For 120V AC output voltage with 170V amplitude, the output voltage of OPamp is equal to
VAC_FB=Vout_DC+Vout_AC=1.68V+1.44V=3.12V. it will feedback to pin 18 of VAC_FB. after
calculating the error, then adjusts the output voltage accordingly.
+5V
R 28 5 .1 K R3 1K C3 0 .1 u F
R 32 1 0K
55 18
R 39 2 00 K R 34 2 00 K
54
ACL
R 38 2 00 K R 35 2 00 K
OPamp
53
ACN EG8025
R 27 1 0K
AC O ff s et : 1. 6 5V
+5V A mp l it u de : 1. 3 6V
F re q ue n cy : 50 H z/ 6 0H z
R 31
5 .1 K
Figure 8.2b The Feedback Network of AC Output Voltage for 120V Inverter
The EG8025’s AC current sampling and feedback circuit structure is shown in Figure 8.3a.
IFB1P,IFB1N and IFB2P,IFB2N sample the currents on shunt resistors RS2 and RS4 respectively.
IFB1P,IFB1N are responsible for sampling the positive half cycle current of AC output when
Hbridge_Mode=0,and IFB2P,IFB2N are responsible for sampling the negative half cycle current of AC
output when Hbridge_Mode=0. Through internal fixed gain 9.5 amplifiers and a current
synthesizer,then feed back to internal current mode loop to calculate the error to adjust load
response.
External PCB traces of IFB1P,IFB1N and IFB2P,IFB2N are required with differential pairs to rout.
The recommend resistance for R97,R98,R101,R102 is 100Ω,as shown in Fig 8.3.If user needs to
change the resistance,it is recommended that the maximum resistance not exceed 1KΩ,otherwise it
will affect the gain of internal amplifier.
The internal current loop of EG8025 sets the maximum saturation current value. The
maximum saturation current value is Imax=3000mV/9.5/Rs. For example, when Rs is 0.01Ω,
maximum current Imax=3000mV/9.5/0.01Ω=31.5A can be obtained. Here 0.01Ω(Rs) is more
suitable for 1.5KW inverter applications. For different power watts inverter applications, the shunt
resistance can be changed according to above formula.
The pins of IFB1P, IFB1N and IFB2P,IFB2N cannot be left floating or connect to GND, and it
must refer the connection of section 8.7, otherwise the output voltage will fail.
+400V S1 S3
RS1 RS3
R97
100Ω24 IFB2P
S2 S4 25
IFB2N
R101
100Ω EG8025
R98
100Ω28 IFB1P 1
RS4 Hbridge_Mode
RS2 29
R102 IFB1N
100Ω
RS5
GND
EGmicro provides a software utility of computer side that can calibrate the output voltage and
output current for mass production. User can log in www.egmicro.com website to download it or
contact us for it.
EG8025 provides two channels temperature feedback TFB1 and TFB2, which is use for over
temperature protection and detection the temperature value to report onto UART. The TFB1 is
mainly used to detect temperature of PCB board, and the TFB2 is mainly used to detect IGBT
temperature. The temperature detection circuit is shown in Figure 8.4a.
The temperature detection circuit of TFB1 is a simple voltage divider circuit, which consists of
thermal resistor RT1 and R60 resistor, as shown in Fig 8.4a.Thermal resistor has 10K resistance at
25℃(B=3950),and the recommend resistance for R60 is 2KΩ.The TFB1’s over temperature voltage
is set to 3.3V,corresponding over temperature value is about 85℃, and hysteresis value of over
temperature protection is 10℃,it will turn off the over temperature protection when temperature
value is less than 75℃.
The temperature detection circuit of TFB2 is a simple voltage divider circuit, which consists of
thermal resistor RT2 and R61 resistor, as shown in Fig 8.4a.Thermal resistor has 100K resistance at
25℃(B=3950),and the recommend resistance for R61 is 6.2KΩ.The TFB2’s over temperature
voltage is sets to 3.3V,corresponding over temperature value is about 130℃, and hysteresis value of
over temperature protection is 10℃,it will turn off the over temperature protection when
temperature value is less than 120℃.
+5V +5V
TFB1 TFB2
RT1 RT2
10K(B=3950) 100K(B=3950)
9 TFB1
EG8025 R60 R61
0.1uF
10 TFB2 0.1uF 2K 6.2K
In order to prevent inverter from being damage duo to too low or too high DC bus voltage
input, EG8025 has a build-in DC bus detection circuit for over voltage and under voltage protection.
The DC bus voltage detection circuit shown in Figure 8.5a. The detection circuit of pin11 VDC_IN is a
simple voltage divider circuit.
The over voltage value of VDC_IN is set to 2.8V with 500mS delay, corresponding over voltage
value of DC bus is about 440V (as shown in circuit of Fig 8.5a), and hysteresis value of over voltage
protection is 10V,it will turn off the over voltage protection when DC bus voltage value is lower than
430V.
The under voltage value of VDC_IN is set to 1.8V with 10S delay, corresponding under voltage
value of DC bus is about 290V (as shown in circuit of Fig 8.5a), and hysteresis value of under voltage
protection is 30V,it will turn off the under voltage protection when DC bus voltage value is higher
than 320V.
R74
200K
R71
150K
VDC_IN
EG8025 11
R64
2.2K
The DT1 and DT0 pins control the dead time. Dead time is one of the important characteristics
of IGBT/MOSFET. Lack of enough dead time will result in the damage of MOSFET duo to bridge
shoot-through. If the dead time is too long, it will lead to distortion of waveform and overheating of
MOSFET. Figure 8.6a is the four dead time settings of EG8025,“00”=300nS,“01”=500nS,“10”
=1uS,“11”=1.5uS.
300nS 300nS
1HO
DT1,DT0=00 2HO
1LO
2LO
500nS 500nS
1HO
2HO
DT1,DT0=01
1LO
2LO
1uS 1uS
1HO
2HO
DT1,DT0=10
1LO
2LO
1.5uS 1.5uS
1HO
DT1,DT0=11 2HO
1LO
2LO
EG8025 supports the legs interchange function of left bridge and right bridge, the purpose is
more easily to layout the PCB board after left bridge and right bridge are interchanged.
The pin 1(HBridge_Mode) of EG8025 is used for setting H-Bridge interchange.
The application circuit with HBridge_Mode "0" is shown in Fig 8.7a.
When HBridge_Mode is "0",the left-bridge’s IGBTs/MOSFETs are controlled by output signals
of HO2,VS2,LO2,SDHIN2,SDLIN2 from gate driver 2, and right-bridge’s IGBTs/MOSFETs are
controlled by output signals of HO1,VS1,LO1,SDHIN1,SDHLIN from gate driver 1. IFB1P,IFB1N are
responsible for sampling the positive half cycle current of AC output when Hbridge_Mode=0, and it
must be connected to RS4 shunt resistor. IFB2P,IFB2N are responsible for sampling the negative half
cycle current of AC output when Hbridge_Mode=0, and it must be connected to RS2 shunt resistor.
The output inductor L1 on ACL must be connected to switching node of left bridge, and L2 on
ACN must be connected to switching node of right bridge. The positive sensing input of differential
amplifier must be connected to ACL, and the negative sensing input of differential amplifier must be
connected to ACN, so that the output voltage feedback can be in phase with internal AC reference
voltage.
+400V S1 S3
L1 500uH
ACL
RS1 RS3
L2 500uH 4.7uF
S2 S4 ACN
+5V 810K 810K
6.8K 6.8K
RS2 RS4
RS3 6.8K
GND
6.8K
1K
100Ω
23
24
25
VAC_FB 18
28
29
IFB2P
IFB2N
IFB1P
IFB1N
IFB
64 HO2
63 VS2
62 SDHIN2
59 LO2
57
44
SDLIN2
HO1 EG8025
43 VS1 1
42 SDHIN1 Hbridge_Mode
39
LO1
37
SDLIN1
+400V S1 S3
L1 500uH
ACL
RS1 RS3
L2 500uH 4.7uF
S2 S4 ACN
+5V 810K 810K
6.8K 6.8K
RS2 RS4
RS3 6.8K
GND
6.8K
100Ω
100Ω
100Ω
1K
100Ω
23
24
25
VAC_FB 18
28
29
IFB2P
IFB2N
IFB1P
IFB1N
IFB
64 HO2
63 VS2
62
SDHIN2
59 LO2
57 +5V
44
SDLIN2
HO1 EG8025
43 VS1 1
42 SDHIN1 Hbridge_Mode
39
LO1
37
SDLIN1
9. Protections
EG8025 features some protections against over load, over current, over voltage and under
voltage for DC bus, over temperature, short circuit, and etc.
EG8025 provides two AC voltage reset modes, one is to perform a hardware reset by pulling
down pin 20(AC_RST) to a low voltage, another is to perform a software reset through a UART
commands.
The following protection values are based on a 1KW power inverter, and EGmicro can provide
parameter modification according to user requirements.
EG8025 has over load protection function. When continuous output power is greater than
1100W, the red LED on pin 26(LEDR) starts to blink indicating. When continuous output power is
greater than 1200W for 60 seconds or greater than 1300W for 1 second, the output will be turned
off and outputs red LED indicating. User can read the over load status indication through the UART
serial ports.
EG8025 has over current protection function. When AC continuous output current is greater
than 5A, the red LED on pin 26(LEDR) starts to blink indicating. When AC continuous output current
is greater than 5.5A for 60 seconds, the output will be turned off and outputs red LED indicating.
User can read the over current status indication through the UART serial ports.
EG8025 has over voltage and under voltage protection function for DC bus. When DC bus
voltage is higher than 440V or lower than 290V , the output will be turned off and outputs red LED
indicating. User can read the over voltage and under voltage status indication through the UART
serial ports.
EG8025 has a over temperature protection function for PCB board. When TFB1’s
temperature value is higher than 85℃, the output will be turned off and outputs red LED indicating.
User can read the over temperature status indication through the UART serial ports.
EG8025 has a over temperature protection function for IGBT. When TFB2’s temperature
value is higher than 130℃, the output will be turned off and outputs red LED indicating. User can
read the over temperature status indication through the UART serial ports.
EG8025 has short circuit protection function for output. When short circuit fault is happened,
after a short time 30mS delay, the output will be turned off and outputs red LED indicating. User
can read the short circuit status indication through the UART serial ports.
EG8025 provides independent four channels current protection circuit for H-bridge
IGBT/MOSFET, and four comparators with 200mV reference source, which are used for peak
current limitation of H-bridge’s IGBT/MOSFET. The peak current protection circuit of IGBT/MOSFET
is shown in Figure 9.7a.
The following formals are a reference design for setting peak current value.
Peak current protection value of S1: Is1_peak=200mV*(1+R26/R25)/RS1
For example, when R26=10K,R25=10K,RS1=10mΩ
Is1_peak=200mV*(1+10K/10K)/10mΩ=40A
Peak current protection value of S2: Is2_peak=200mV*(1+R36/R30)/(RS2+RS5)
For example, when R36=10K,R30=3.3K,RS2=10mΩ,RS5=10mΩ
Is2_peak=200mV*(1+10K/3.3K)/(10mΩ+10mΩ)=40A
Peak current protection value of S3: Is3_peak=200mV*(1+R33/R29)/RS3
For example, when R33=10K,R29=10K,RS3=10mΩ
Is3_peak=200mV*(1+10K/10K)/10mΩ=40A
Peak current protection value of S3: Is4_peak=200mV*(1+R24/R23)/(RS4+RS5)
For example, when R36=10K,R30=3.3K,RS2=10mΩ,RS5=10mΩ
Is4_peak=200mV*(1+10K/3.3K)/(10mΩ+10mΩ)=40A
+400V S1 S3
62 R26 10K 42 R33 10K
200mV
R25
10K
C17
1nF
RS1 200mV
R29
10K
C20
1nF
RS3
63 43
10mΩ 10mΩ
EG8025 S2 EG8025 S4
200mV
R30 C19 RS2 200mV
R23
3.3K
C16
1nF
RS4
3.3K 1nF
10mΩ 10mΩ
RS5
GND 10mΩ
Figure 9.7a The independent four channels current protection circuit of IGBTs/MOSFETs
Inverter 1
S1_A S3_A
BAT+
T1_A L
500uH
ACL_A
4.7uF
BAT- ACN_A
S2_A S4_A 500uH
V1_A V2_A
GND_A N
+5V_B
2HO
VS2
1HO
2LO
VS1
1LO
Multi_INV 15
Phase_SEL 12 GND_A 1K
EG1611 17
EG8025 VZC_IN OPT1
13
AC_Fout
Work as
master mode
1K
Inverter 2
S1_B S3_B
BAT+
T1_B
500uH
ACL_B
4.7uF
BAT- ACN_B
S2_B S4_B 500uH
V1_B V2_B
GND_B
2HO
VS2
1HO
2LO
VS1
1LO
15
Multi_INV +5V_B
Phase_SEL 12 GND_B
EG1611 17
EG8025 VZC_IN
13
AC_Fout
Work as
slave mode
Inverter 1
S1_A S3_A
BAT+
T1_A A
500uH
ACL_A
4.7uF B
BAT- ACN_A
S2_A S4_A 500uH
C
V1_A V2_A
GND_A N
+5V_B
2HO
VS2
1HO
2LO
VS1
1LO
15
Multi_INV
Phase_SEL 12 GND_A 1K
EG1611 17
EG8025 VZC_IN OPT1
AC_Fout 13
Work as
master mode
1K
Inverter 2
S1_B S3_B
BAT+
T1_B
500uH
ACL_B
4.7uF
BAT- ACN_B
S2_B S4_B 500uH
V1_B V2_B
GND_B
2HO
VS2
1HO
2LO
VS1
1LO
15
Multi_INV
Phase_SEL 12 +5V_B
EG1611 17
EG8025 VZC_IN
OPT2 1K
AC_Fout 13 +5V_C
Work as
slave mode
+400V_C
Inverter 3 GND_B GND_C
S1_C S3_C
BAT+ T1_C
500uH ACL_C
4.7uF
BAT-
S2_C S4_C 500uH ACN_C
V1_C V2_C
GND_C
2HO
VS2
1HO
2LO
VS1
1LO
15
Multi_INV
Phase_SEL 12 +5V_C
EG1611 17
EG8025 VZC_IN
AC_Fout 13
Work as
slave mode
The APP is an Application layer function, which mainly used to send status of inverter to the
host and to receive control commands from the host to control unit. The APP works in inverter
running.
High Byte of output Output Voltage: the data of output voltage is represented by 2 bytes. The
BYTE1
voltage LSB is 0.1V. For example:[0x08,0xCF] The voltage is represented by two
hexadecimal numbers,0x08 converted to decimal is 8 and 0xCF converted
Low Byte of output
BYTE2 to decimal is 207.The decimal value of the data is 8*256+207=2255.The
voltage
resulting voltage V=2255*0.1V=225.5V.
High Byte of output Output Current: the data of output current is represented by 2 bytes. The
BYTE3
current LSB is 0.01A. For example:[0x02,0xCF] The current is represented by two
hexadecimal numbers,0x02 converted to decimal is 2 and 0xCF converted
Low Byte of output
BYTE4 to decimal is 207.The decimal value of the data is 2*256+207=719.The
current
resulting Current I=719*0.01A=7.19.
Inverter OFF: The inverter output will be turned off once it receives a shutdown message.
Inverter ON: The inverter output will be turned on once it receives a turn on message and clear
the fault status.
The message length is 16 bytes, and the timeout is 50mS,which means that the time interval of
sending messages between bytes should be less than 50mS.To avoid receiving error frames, it is
recommended that the time interval between two groups of messages is greater than 100mS.
Inverter ON Message:
Inverter ON(50ms receive timeout)
BYTE0 Command 1 0x7D
BYTE1 Command 2 0xD7
BYTE2 Command 3 0xFE
BYTE3 Command 4 0xDA
BYTE4 Reserved 0x00
BYTE5 Reserved 0x00
The CFG is a advanced Configuration function, which is mainly used to set working mode of
inverter and to calibrate the parameters value. The CFG works in inverter stopping. The parameter
values configured through the CFG will be stored in the FLASH of EG8025, and automatically load
during power on.
The CFG functions requires a request massage from host, and EG8025 responds to the request
service and sends the response massage back to host.
Both sending data and receiving data use with a fixed length of 16 bytes. The message starts
with ASCII codes‘E’ and‘G’, and ends with CRC16. In order to distinguish between APP
message and CFG message, EG8025 uses a CRC checksum to distinguish it.
The checksum of APP message is f(X16+X15+X2+1). The checksum of CFG message is
f(X +X15+X2+1)+1,that is, the CFG message is equal to APP+1.
16
IO Control Table:
IO Control Table