Introduction device—i fashion comparable and_ often Transistors are far sm thence need no he mn. They are mechs ‘and can do some ‘power and may be ly strong, have prac- better than vacuum 1d WH. Brattain of Bell ransistor has now become the ‘Though transistor is only fast replacing vacuum tubes hi pon-p transistor, ‘An nep-n transistor is composed of two n-type semi separated by a thin section of p-type as shown in Fig. 10+ in practice, these by ei P transistor is formed of n-type as shown in | “ ig. 103 r, the following points may be In each type of transi junctions. ‘Therefore, a transistor may mn of two diodes connected back to in layer. This Origin of the name “Tran invented, scientists often try to d e. A transistor has two pn junctions. ed later, one junction is foward biased and the other is reverse bias- ed. The forward biased junction se biased junction has ahi ‘a low resistance path where= ch. The weak ince circuit and output is ‘Therefore, a. wansstor 10 high resistance ynmeans the signal transfer property of the d 3 clasifies it as a solid element in the same general family A transistor (pnp or npn) conductors. The section on one fon the opposite side is the collector. The middle section is call the base and forms two ju between the emitter and collector. (i) Emitter. The section on one side that supplies charge carriers (electrons, of hol called the emitter. . i always forward biased ‘There are three terminals, taken from each type of semi- Scanned with CamScannerjators Fae Transat on onthe other side that collects ‘the collector. The collector is always reverse output circuit. Similarly, npn transistor has reverse bi ), Base. The middle section which forms two pa junctions ter and led the base. The base- low resistance for the is reverse biased and provides high resistance in the collector circ 10-3 Some facts about the transistor Before discussing trai may keep in mind the following fact to be of equal size. unre Fcouuscron me 103 ly doped so that it can inject a lar Tons. oF holes) into the base. The asses most of the emitter ee te sae a et eater Transistors 183 injected charge carriers to the collector, ‘The collector is moderately doped. or simply the emiler diode The junction between the base anc tor maj i {he base and collector tay be called. caller base inte oe simply (iv) The emitter diode diode i always reverse diode is generally very smali the collector diode is much higher. 104 Transistor action r-base junction of a transistor is forward biased tor-base junction cireuit depends current is zero, the emitter upon the emitter current. then coll s-base junction and reverse bias junction. The forward bias causes the electrons in ype emitter to flow towards the base. This constitutes the emitter current Ip. As these electrons flow through the they tend to combine Since the base and very thin, therefore, only a few electrons (less than 5%) combine with holes to constitute’ baset current Zs, The remainder (tmore than 95%) cross over into the collector region to cor current Lc. In this way, almost the entire emitter current flows in current (a few pA wou! fed collector cut off current and i d combine with holes become valence hoy dow down through holes and int base current fon these electrons. 4 shows the mpm” Scanned with CamScannerTransistors: Ist ¢ current is the sum of xr that emitter the collector circuit. collector and base current Tpatntle (ii) Working of pap transistor. Fig. 10°5 shows the basic connection of a pnp transistor. The forward bias causes the holes in the p-type enitter to flow.towards the base. This constitutes the emitter current Ip. _As these holes cross into the they tend to combine with the electrons. As the base ped and very thin, therefore only a few he than with the electrons. The remainder (more collector region t almost the entire may be noted tha jles. However, Wy electrons. Importance of tr: ‘emitter-base junction) h in pnp transistor is by the external connecting wires, the current i tor action, The inpu w resistance because of Torwar Transiatora 185 collector-base junction) ‘igh resis ‘As we have seers enn eniner a 105 Transistor symbols Int eee ee eres agama HeECY ge MLC ee a i ipral ep caine sehen oS curren ZOWECTOR corres the strength ofa weak si ¢ basic circu as an amplifier. 1 weak signal put is taken across 1 In order to achieve tno nacemay i, vaguum tbo amples er roy aha Scanned with CamScannerangAtatte, ipa icuit as tow centance, therein, change in signal voltage causes an appreciable change it Garret. This causes almost the same” change ino ue {0 transistor act 3c. collector current ow high load resistance Re produces a large voltage actos Fig. 107 Allustration. ‘The action of a transistor as an amplifier can be ge produces change in This coll flowing through also be approximately produce a voltage = 3 KQxImA = 5V. collector load Re_woul Thus, a change of 011 the output circuit. Ino raise the voltage level of the signal amplification is 50. ter, base and to be’ connected ‘Accordingly ; a transistor can be ing three ways ; Each circuit connection has specific advanta, ‘vantages. It may be noted here that regardless of cis 0 Transiatore ue the emitter is al collector always the forward direction, while the 108 Common base connection uit arrangement, input is applied. between emitter and base and output ir taken from eallectey ond bane tese ° acm era h Fig. 108 factor (a). Tt isthe Tan, common base come amplification factor i.e. Ale tem RIE at constant Ven amplification factor it jut not more than unity) by decreasing ‘achieved by making the base thin and fly, Practical values of = in commercial transistors less than tunity. de range from09 to 099. ion for collector current The whole of not reach the collector. Tt is because a small ‘Sn result of electron-hole combinations occuring te aro contered, thon = ngement: sauce, bigher, rine to voltage ‘and power Bei Scanned with CamScanner188 Transistors in base area, gives rise to_base current. Morever, as the collector- base junction is reverse biased, therefore, some leakage current flows Te follows, therefore that total collector The leakage current Iver. This current, is due to the motion of minority carriers across base-collector junction on account of i being reverse biased” ‘This is generally tuch smaller than ale Total collector current abbreviated as Icno, meaning collector-base current with emitter open, B Ic = aIvtlevo The current Icpo is usually small and may be neglected in transistor circuit ealeulations. Example 10:1. Jn a common base connecti: 0-95 mA. Calculate the value of Ip. Solution Using the relation, Te = Isttc or 1 = 1p+0°95 . Ip = 1-095 =: 005 mA (Ans.) Example 10-2. Ina common base connection, current ampli- ffleation factor is 0-9. If the emitter current is ImA, determine the value of base current. Tp = Im, To = Solution Here «= 09, Ip=imA Ie Now 5 0 8 = Go Ie = alg = 09x1 = 09mA Also Te = Intle Base current, Jp = Ip—Ic = 1-09 =O1mA (Ans) and Ee DSot Find Nevo ofan Om Tom O95 ma 1 ee os In othor words, af, part of emitter current readres the collotor terminal. lc Sn Igmet, < fom ely. 189 Je = Intle = 0054095 = ImA '. Current amplification factor, wee Te = 095 = 28 095 (Ane) Example 10-4. In a common base conne the emitter lor current is open, the current is mA. If the emitt r eurrent, Given that a = 0-92, fs 50d. Find the total colle Soluti Here, Ip = ImA, « = 092, Teno = SOKA. °, Total collector current, Te = aletIcxo = 092. 14-50% 10°? = 0924005 = 097 mA (Ans) ” Example 105. In a common base connection, « = 0-95. The voltage drop across 2KQ resistance which ia connected in the collector is 2Y. Find the base curr Solution : Fig. 109 shows the reque ired common base connection, ‘The voltage drop across Re (= 2KO) is 2V. ov Te = gRq7 1 Te Now «= 7 I Ip = =. a” OS = 1-05mA Using the relation, In = Intle In = In-le Scanned with CamScanner