Experiment 1
Experiment 1
NAME : S.M.RUWANPATHIRANA
ADD NO : COL/EE/2018/F/200
COURSE : HNDE-ELE (3TH YEAR)
DATE OF INT : 14.02.2022
DATE OF SUB: 28.02.2022
DATE : 2022-02-14
THEORY
A good transistor amplifier must have the following parameters; high input
impedance, high band width, high gain, high slew rate, high linearity, high efficiency,
high stability etc. The above given parameters are explained in the next section.
Input impedance: Input impedance is the impedance seen by the input voltage source
when it is connected to the input of the transistor amplifier. In order to prevent the
transistor amplifier circuit from loading the input voltage source, the transistor
amplifier circuit must have high input impedance.
Q point of a transistor
The point q of a circuit describes the output level when the input is short-circuited or
disconnected. that is to say that the transistor (s) of the circuit is (are) controlled solely
by the polarization network, the actual input being zero.
Q-point is an acronym for rest point. The point q is the operating point of the transistor
to which it is polarized. the notion of point q is used when the transistor acts as an
amplifier and is therefore used in the active region of the output characteristics. to
operate the BJT at one point, it is necessary to supply voltages and currents via
external sources.
For high frequency signal operation, junction capacitances of Transistors and terminal
capacitances play dominant role. Separate high frequency equivalent circuits using
hybrid-π model are developed for suitable analysis. This model can be used at low-
frequency and high-frequency operations.
PROCEDURE :
Frequency V out(V)
1 3.0
20 2.8
40 2.45
60 2.2
80 1.85
100 1.6
120 1.4
140 1.25
160 1.2
180 1.05
200 1.0
300 0.65
400 0.6
500 0.4
TABULATION
Frequency V out(V)
3 44.5
4.3 42.92
4.6 41.76
4.7 40.83
4.9 39.32
5 38.06
5.08 36.90
5.15 35.92
5.2 35.56
5.26 34.40
5.3 33.98
5.48 30.24
5.6 29.54
5.7 26.02
GRAPH
DISCUSSION
In this experiment we have tested for high frequency response of bipolar junction
transistor amplifier. In this experiment we measured the output by changing the
frequency of the signal, keeping the input voltage constant.
We could observe the variation of the output as a frequency changed. We plot the
graph of the frequency gain variation by using suitable scales. We use high frequency
range for this experiment.
So this graph represents high frequency response of the transistor amplifier.
Considering this graph, it appears that there is an inverse relationship between
frequency and gain in the high frequency rang. Also we can decide upper cut off
frequency of this amplifier by using a graph.
Here the frequency of the input signal was changed and the output voltage was the
corresponding sinusoidal output signal. The input voltage was kept constant here. We
could observe the fluctuations of the output voltage with the frequencies not shown
because they behave like a short circuit.
Also, the emitter leg is shorted to ground for the same reason that applies to the bypass
capacitor. We record the high-frequency variations with an appropriate scale using a
frequency sheet. There seems to be an inverse relationship between frequency and
gain.
Moreover we identified below things
We can note that coupling and bypass capacitors are operating as short circuit
and do not exit in a resultant circuit.
The inner capacitances Cbe and Cbc, which are substantial only at high
frequencies, exist in this circuit.
Cbe is also known as input capacitance and denoted as Cib, and Cbc is also
known as output capacitance and denoted as Cob. Cbe is mentioned on the
datasheet at a specific value of VBE.
Get such a curve for some reasons which occur practically. They are;
• Reading Errors
• Components that we used were not ideal.
• Lose connections among the components
CONCLUSION
At the high frequency end, there are two factors that define the 3dB cutoff point.
The network capacitance
The frequency dependence of hfe(β)