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301 2020 Formula Sheet Edited

The document provides parameter values and equations for modeling key semiconductor devices including PN junctions, MOSFETs, BJTs, and inverters. It includes values for doping density, intrinsic carrier concentration, mobility, permittivity, diffusion and drift currents, exponential carrier distributions, Poisson's equation, and equations for modeling the DC and transient characteristics of logic gates.

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Oluwole Abraham Fajuyi
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20 views4 pages

301 2020 Formula Sheet Edited

The document provides parameter values and equations for modeling key semiconductor devices including PN junctions, MOSFETs, BJTs, and inverters. It includes values for doping density, intrinsic carrier concentration, mobility, permittivity, diffusion and drift currents, exponential carrier distributions, Poisson's equation, and equations for modeling the DC and transient characteristics of logic gates.

Uploaded by

Oluwole Abraham Fajuyi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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PARAMETER VALUES

𝑛𝑖 = 1010 𝑐𝑚−3 PN JUNCTION


𝑘𝑇
= 0.026𝑉
𝑞
𝑘 = 8.62 × 10−5 𝑒𝑉𝐾 −1
𝜀𝑆𝑖 = 1.05 × 10−12 𝐹/𝑐𝑚
𝜀𝑜𝑥 = 3.45 × 10−13 𝐹/𝑐𝑚
1𝜇𝑚 = 10−4 𝑐𝑚
𝑛𝑖 = 2 × 106 𝑐𝑚−3 𝑎𝑡 300𝐾 𝑓𝑜𝑟 𝐺𝑎𝐴𝑠
𝑛𝑖 = 1 × 1010 𝑐𝑚−3 𝑎𝑡 300𝐾 𝑓𝑜𝑟 𝑆𝑖
DRIFT AND DIFFUSION
1 1
𝜌= =
𝜎 𝑞[𝑛𝜇𝑛 + 𝑝𝜇𝑝 ]
𝜌
𝑅𝑠ℎ =
𝑡
𝑑𝑝(𝑥)
𝐽𝑑𝑖𝑓𝑓
𝑝
= −𝑞𝐷𝑝
𝑑𝑥
𝑑𝑛(𝑥)
𝐽𝑑𝑖𝑓𝑓
𝑛
= 𝑞𝐷𝑛
𝑑𝑥
𝐷 𝑘𝑇
= n
𝜇 𝑞

𝐽𝑑𝑟𝑖𝑓𝑡
𝑛
= 𝑞𝑛𝜇𝑛 𝐸 and
For strongly asymmetric junctions
𝐽𝑑𝑟𝑖𝑓𝑡
𝑝
= 𝑞𝑝𝜇𝑝 𝐸

Exponential carrier distribution


−𝑥 𝑥
𝑛(𝑥) = 𝑁𝐷 𝑒𝑥𝑝 𝑎𝑛𝑑 𝑝(𝑥) = 𝑁𝐴 𝑒𝑥𝑝
𝐿 𝐿
EQUATIONS FOR PN JUNCTION IV
ELECTROSTATICS
CHARACTERISTICS
𝑥 𝜌(𝑥)
Gauss law 𝐸(𝑥2 ) − 𝐸(𝑥1 ) = ∫𝑥 2 𝑑𝑥
1 𝜀

𝑥
Poisson law ∅(𝑥2 ) − ∅(𝑥1 ) = − ∫𝑥 2 𝐸𝑑𝑥
1

𝑘𝑇 𝑛𝑜 (𝑥)
∅𝑛 (𝑥) = ln
𝑞 𝑛𝑖

𝑘𝑇 𝑝𝑜 (𝑥)
∅𝑝 (𝑥) = − ln
𝑞 𝑛𝑖

𝑘𝑇 𝑁𝐴 𝑁𝐷
∅𝐵 = ln 2
𝑞 𝑛𝑖
MOS ELECTROSTATICS MOSFET DEVICE PHYSICS

Drain current in Triode region

Drain current in Saturation region

𝜀𝑜𝑥
𝐶𝑜𝑥 =
𝑡𝑜𝑥

𝑉𝐹𝐵𝑛 = −(∅𝑛+ − ∅𝑝 )

𝑉𝐹𝐵𝑝 = −(∅𝑝+ − ∅𝑛 )
Effect of Backgate Bias
Inversion layer charge

𝑄𝑛 = 𝐶𝑜𝑥 (𝑉𝐺𝐵 − 𝑉𝑇 )

Small Signal Model


𝛽
𝛼=
𝛽−1

𝑁𝑑𝐸 𝐷𝑛 𝑊𝐸
𝛽=
𝑁𝑎𝐵 𝐷𝑝 𝑊𝐵

STATIC CHARACTERISTICS OF THE


INVERTER

BIPOLAR JUNCTION TRANSISTOR (BJT)

Minority carrier distributions in the different regions are

Transient Characteristics of the Inverter

The BJT gains and currents

Transient Characteristics of the Inverter


The total propagation delay is therefore:

Average power dissipation is


2
𝑃𝑎𝑣𝑔 = 𝐶𝑡𝑜𝑡 𝑉𝐷𝐷 𝑓𝑐𝑙𝑘 = 𝑉𝐷𝐷 𝐼𝐷
Power Delay Product is

Given a 1𝜇𝑚 process we abstract effective switching


resistance as:

𝐿 𝐿
𝑅′𝑝 = 45𝑘Ω ( ) 𝑎𝑛𝑑 𝑅′𝑛 = 15𝑘Ω ( )
𝑊 𝑊

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