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Ece630 2019 Syllabus

This course covers advanced topics in semiconductor devices, including semiconductor physics, metal-semiconductor contacts, pn-junctions, MOS capacitors, MOSFETs, and related optoelectronic devices. It is taught by Prof. Irene Goldthorpe on Thursdays from 11:30am to 2:20pm in room EIT 3141. Evaluation includes a midterm, two assignments using device simulation software and solving problems, and a final exam.

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70 views2 pages

Ece630 2019 Syllabus

This course covers advanced topics in semiconductor devices, including semiconductor physics, metal-semiconductor contacts, pn-junctions, MOS capacitors, MOSFETs, and related optoelectronic devices. It is taught by Prof. Irene Goldthorpe on Thursdays from 11:30am to 2:20pm in room EIT 3141. Evaluation includes a midterm, two assignments using device simulation software and solving problems, and a final exam.

Uploaded by

Leticia Dishel Vas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ECE 630: Physics and Models of Semiconductor Devices

Course Outline Fall 2019

Course description
This course reviews and deepens understanding of topics covered in an undergraduate
semiconductor devices course, and introduces more advanced topics in this subject. We will
cover: semiconductor physics, metal-semiconductor contacts, the physical principles and
operation of pn-junctions, MOS capacitors, MOS field-effect transistors, and related
optoelectronic devices, and scaling and short-channel effects of modern and future MOSFETs.

Instructor
Prof. Irene Goldthorpe, Department of Electrical and Computer Engineering
Office: QNC 4601
Email: [email protected]
Phone: ext. 31242
Office hours: By appointment (email instructor or ask after lecture to arrange a time)

Textbook
There will be no textbook required for this course. Handouts and lecture slides will be posted
on the course website.
The following books are useful references:
• “Semiconductor Device Fundamentals”, Pierret
• “Device Electronics for Integrated Circuits”, Muller and Kamins
• “Semiconductor Physics and Devices”, Neamen
• “Solid State Electronic Devices”, Streetman
• “Physics of Semiconductor Devices”, Sze and Kwok
• “Fundamentals of Modern VLSI Devices”, Taur and Ning - Advanced

Lectures
Thursdays, 11:30am – 2:20pm, EIT 3141

Course website
LEARN, ECE 630
Course Outline
• Introduction/motivation {~0.5 weeks}
• Semiconductor Physics: band structure, carrier concentrations, transport,
generation-recombination, non-equilibrium (excess carriers) {~2 weeks}
• P-N junction diode: basic physics, I-V equation, avalanche and zener breakdown,
real diodes {~2 weeks}
• Metal-semiconductor contacts: Schottky barriers, Schottky diode, Ohmic
contacts, contact resistance {~0.5 weeks}
• MOS capacitor: basic physics, flat band voltage, threshold voltage, C-V
measurements {~1.5 weeks}
• MOSFETs: operation, I-V equations, subthreshold, channel length modulation,
mobility degradation {~1 week}
• Technology computer-aided design (TCAD) of MOSFETs: introduction to
SENTAURUS {~0.5 week}
• MOSFET scaling and short-channel behaviour: DIBL, velocity saturation, VT roll-
off, gate leakage, interconnects {~1.5 weeks}
• Modern MOSFETs: high-k dielectrics, metal gates, strain, silicon-on-insulator,
finFETs {~1 week}
• Future MOSFETs: alternative channel materials (III-V, germanium, graphene),
nanowire and carbon nanotube transistors, beyond MOSFETs {~0.5 week}
• Optoelectronic devices: photodetectors, solar cells, LEDs {if time permits}

Evaluation
Midterm 25%
Assignments (2) 25%
Final Exam 50%

• In the first half of the course, problem sets will be assigned approximately every week.
They will not be handed in or graded. There will be a midterm halfway through the term
which will test on lecture material and these problem sets.
• In the second half of the course, there will be two assignments which WILL be handed in
and graded. In assignment #1, students will use the device simulation software
SENTAURUS to model a MOSFET. Assignment #2 will be a problem set based on scaling
and modern MOSFETs.
• The exam will be held during the University scheduled exam period.

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