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ACM02 - Module 6 - FET

The document discusses the field-effect transistor (FET) and compares it to the bipolar junction transistor (BJT). It notes that the key difference is that the BJT is current-controlled, while the FET is voltage-controlled. It then discusses the different types of FETs, including n-channel and p-channel junction FETs (JFETs), as well as enhancement and depletion mode MOSFETs. Examples of JFET characteristics and transfer curves are also shown.

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173 views

ACM02 - Module 6 - FET

The document discusses the field-effect transistor (FET) and compares it to the bipolar junction transistor (BJT). It notes that the key difference is that the BJT is current-controlled, while the FET is voltage-controlled. It then discusses the different types of FETs, including n-channel and p-channel junction FETs (JFETs), as well as enhancement and depletion mode MOSFETs. Examples of JFET characteristics and transfer curves are also shown.

Uploaded by

MECHANICAL ENGINEERING
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Prepared by:

ACM 02 Engr. Cindy D. Dullas


INTRODUCTION

The field-effect transistor (FET) is a three-terminal device used for a variety of applications that
match, to a large extent, those of the BJT. Although there are important differences between the
two types of devices, there are also many similarities. The primary difference between the two
types of transistors is the fact that:
“The BJT transistor is a current-controlled device, whereas the JFET transistor is a
voltage-controlled device.”
◦ In other words, the current IC is a direct function of the level of IB . For the FET the current ID
will be a function of the voltage VGS applied to the input circuit. In each case the current of the
output circuit is controlled by a parameter of the input circuit—in one case a current level and
in the other an applied voltage.
INTENDED LEARNING
OUTCOMES
Become familiar with the construction and
operating characteristics of Junction Field
Effect (JFET), N-channel and P-channel.
Be able to understand the JFET Operation
Condition
BJT is Current-controlled
FET is Voltage-controlled
Types of Field Effect Transistors (The Classification)

n-Channel JFET
 JFET
FET p-Channel JFET

MOSFET (IGFET)

Enhancement Depletion
MOSFET MOSFET

n-Channel p-Channel n-Channel p-Channel


EMOSFET EMOSFET DMOSFET DMOSFET
Introduction.. (Advantages of FET over BJT)

 High input impedance (M)


(Linear AC amplifier system)
 Temperature stable than BJT
 Smaller than BJT
 Can be fabricated with fewer processing
 BJT is bipolar – conduction both hole and
electron
 FET is unipolar – uses only one type of current
carrier
 Less noise compare to BJT
 Usually use as an Amplifier and logic switch
Disadvantages of FET
• Easy to damage compare to BJT
Junction field-effect transistor..
 There are 2 types of JFET
 n-channel JFET
 p-channel JFET

 Three Terminal
 Drain – D
 Gate -G
 Source – S
SYMBOLS

Drain Drain

Gate Gate

Source Source

n-channel JFET p-channel JFET


N-Channel JFET

 Major structure is n-type material (channel)


between embedded p-type material to form 2 p- n
junction.
 In the normal operation of an n-channel device, the
Drain (D) is positive with respect to the Source (S).
Current flows into the Drain (D), through the
channel, and out of the Source (S)
 Because the resistance of the channel depends on
the gate-to-source voltage (VGS), the drain current
(ID) is controlled by that voltage
N-channel JFET..
P-channel JFET

 Major structure is p-type material


(channel) between embedded n-type
material to form 2 p-n junction.
 Current flow : from Source (S) to Drain (D)
 Holes injected to Source (S) through p-
type channel and flowed to Drain (D)
P-channel JFET..
Water analogy for the JFET control
mechanism
JFET Characteristic for VGS = 0 V and 0<VDS<|Vp|

 To start, suppose VGS=0


 Then, when VDS is increased, ID increases.
 Therefore, ID is proportional to VDS for small
values of VDS
 For larger value of VDS, as VDS increases, the
depletion layer become wider, causing the
resistance of channel increases.
 After the pinch-off voltage (Vp) is reached, the ID
becomes nearly constant (called as ID maximum,
IDSS-Drain to Source current with Gate Shorted)
JFET for VGS = 0 V and 0<VDS<|Vp|

Channel
becomes
narrower as
VDS is
increased
Pinch-off (VGS = 0 V, VDS = VP).
ID versus VDS
for VGS = 0 V and 0<VDS<|Vp|

JFET Characteristic Curve


JFET for
(Application of a negative voltage to the gate of a JFET )
JFET Characteristic Curve..
 For negative values of VGS, the gate-to-channel
junction is reverse biased even with VDS=0
 Thus, the initial channel resistance of channel is
higher.
 The resistance value is under the control of VGS
 If VGS = pinch-off voltage(VP)
 The device is in cutoff (VGS=VGS(off) = VP)
 The region where ID constant – The saturation/pinch-
off region
 The region where ID depends on VDS is called the
linear/ohmic region
p-Channel JFET
p-Channel JFET characteristics with IDSS =6
mA and VP = +6 V.
Characteristics for n-channel JFET
Characteristics for p-channel
JFET

+
+

P
Transfer Characteristics

The input-output transfer characteristic of


the JFET is not as straight forward as it is
for the BJT. In BJT:

IC= IB

which  is defined as the relationship


between IB (input current) and IC (output
current).
Transfer Characteristics..

In JFET, the relationship between VGS (input voltage)


and ID (output current) is used to define the transfer
characteristics. It is called as Shockley’s Equation:

 V GS 2

ID = IDSS 1 - VP=VGS (OFF)
 VP 
The relationship is more complicated (and not linear)
As a result, FET’s are often referred to a square
law devices
Transfer Characteristics…
 Defined by Shockley’s equation:
2
 V 
I D  IDSS  1  GS  VP  VGS (off )
 VGS 
 (off ) 

 Relationship between ID and VGS.


 Obtaining transfer characteristic curve axis
point from Shockley:
 When VGS = 0 V, ID = IDSS
 When VGS = VGS(off) or Vp, ID = 0 mA
Transfer Characteristics

JFET Transfer Characteristic Curve JFET Characteristic Curve


Exercise 1
Sketch the transfer defined by
IDSS= 12 mA dan VGS(off) = - 6

VGS ID  ID 
VGS = VP1 -
0 IDSS I 
DSS 
 2
0.3Vp IDSS/2  VGS 
ID = IDSS  1 - 
0.5Vp IDSS/4  VP 
Vp 0 mA
Exercise 1
Sketch the transfer defined by IDSS= 12 mA dan VGS(off)
= Vp=- 6
IDSS

2
 VGS 
ID = IDSS  1 - 
 VP 
VGS =0.3VP IDSS/2
 ID 
VGS =0.5VP IDSS/4 VGS = VP1 -
I 
DSS 

Answer 1
Exercise 2
Sketch the transfer defined by
IDSS= 4 mA dan VGS(off) = 3 V

VGS ID  ID 
VGS = VP1 -
0 IDSS I 
DSS 
 2
0.3Vp IDSS/2  VGS 
ID = IDSS  1 - 
0.5Vp IDSS/4  VP 
Vp 0 mA
Sketch the transfer defined by
Exercise 2 IDSS= 4 mA dan VGS(off)= 3V

IDSS 2
 VGS 
ID = IDSS  1 - 
 VP 
IDSS/2
IDSS/4 VP  ID 
VGS = VP1 -
I 
DSS 

VGS =0.3VP
VGS =0.5VP
Answer 2
Answer 2

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