® MMBT3906

SMALL SIGNAL PNP TRANSISTOR

PRELIMINARY DATA

Type Marking
MMBT3906 36

■ SILICON EPITAXIAL PLANAR PNP

TRANSISTOR
■ MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COMPLEMENTARY TYPE IS
MMBT3904

APPLICATIONS
■ WELL SUITABLE FOR PORTABLE SOT-23
EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH

HIGH GAIN AND LOW SATURATION

VOLTAGE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) -60 V
V CEO Collector-Emitter Voltage (I B = 0) -40 V
V EBO Emitter-Base Voltage (I C = 0) -6 V
IC Collector Current -200 mA
o
P tot Total Dissipation at T C = 25 C 350 mW
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

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MMBT3906

THERMAL DATA

R thj-amb • Thermal Resistance Junction-Ambient Max 357.1 o

C/W
2
• Device mounted on a PCB area of 1 cm

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEX Collector Cut-off V CE = -30 V -50 nA
Current (V BE = 3 V)
I BEX Collector Cut-off V CE = -30 V -50 nA
Current (V BE = 3 V)
V (BR)CEO ∗ Collector-Emitter I C = -1 mA -40 V
Breakdown Voltage
(I B = 0)
V (BR)CBO Collector-Base I C = -10 µA -60 V
Breakdown Voltage
(I E = 0)
V (BR)EBO Emitter-Base I E = -10 µA -6 V
Breakdown Voltage
(I C = 0)
V CE(sat) ∗ Collector-Emitter I C = -10 mA I B = -1 mA -0.25 V
Saturation Voltage I C = -50 mA I B = -5 mA -0.4 V
V BE(sat) ∗ Base-Emitter I C = -10 mA I B = -1 mA -0.85 V
Saturation Voltage I C = -50 mA I B = -5 mA -0.65 -0.95 V
h FE ∗ DC Current Gain IC = -0.1 mA V CE = -1 V 60
IC = -1 mA V CE = -1 V 80
IC = -10 mA V CE = -1 V 100 300
IC = -50 mA V CE = -1 V 60
IC = -100 mA V CE = -1 V 30
fT Transition Frequency I C = -10mA V CE = -20 V f = 100MHz 250 MHz
NF Noise Figure V CE = -5 V I C = -0.1 mA f = 10 Hz 4 dB
to 15.7 KHz R G = 1 KΩ
C CBO Collector-Base IE = 0 V CB = -5 V f = 100 KHz 6 pF
Capacitance
C EBO Emitter-Base IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
Capacitance
td Delay Time I C = -10 mA I B = -1 mA 35 ns
V CC = -3V
tr Rise Time 35 ns
ts Storage Time I C = -10 mA I B1 = -I B2 = -1 mA 225 ns
V CC = -3V
tf Fall Time 72 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

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 MMBT3906

SOT-23 MECHANICAL DATA

mm mils
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 0.85 1.1 33.4 43.3

B 0.65 0.95 25.6 37.4

C 1.20 1.4 47.2 55.1

D 2.80 3 110.2 118

E 0.95 1.05 37.4 41.3

F 1.9 2.05 74.8 80.7

G 2.1 2.5 82.6 98.4

H 0.38 0.48 14.9 18.8

L 0.3 0.6 11.8 23.6

M 0 0.1 0 3.9

N 0.3 0.65 11.8 25.6

O 0.09 0.17 3.5 6.7

0044616/B

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MMBT3906

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved

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