1 A new semiconductor was developed by fusing two elemental semiconductors using an

atomistic simulation. The band structure and density of states were computed for room
temperature and presented in Fig. A.

Fig. A. band structure and density of states of a new semiconductor

the effective mass of electron in conduction band was estimated as 1.055 from the rate of change
of energy with momentum. The effective density of states at conduction and valance bands were
found 1.24×1019 cm-3 and 1.84×1019 cm-3 respectively. Calculate:
1. Density of states 125 meV above and below the conduction band edge per 1 eV in a
volume of 10 nm × 100 nm × 10 nm.
2. Bandgap of the semiconductor
3. Intrinsic carrier concentration
2 a. From an experiment on metal alloy, the drift velocity for the applied field is calculated as
shown in Fig. B. It was found that the rate of change of drift velocity is 141.7 cm2/V.s. If the
density of the free electron n = 9×1021 𝑚-3, find the electrical conductivity, mean free time
between scattering and drift mobility. [5]

Fig. B. Drift velocity for the applied field

b. After doping 1% Si in a pure aluminum foil of width 1 cm and cross section area of 0.1 cm2,
the Hall experiment was conducted and found the following as listed in table-1, for the foil
current of 70 A:
Table-1
Hall Voltage Applied magnetic
(VH) flux (B0)
8 μV 3T

Calculate the (a) Density of conduction electron, (b) Hall mobility, and (c) Hall coefficient. [5]
3 A new semiconductor has NC = 1019 cm-3, NV = 5 x 1018 cm-3, and Eg = 2.3 eV. If it is doped
with 1017 cm-3 donors (fully ionized), calculate:
1. Intrinsic carrier concentrations
2. Carrier concentration of Majority and Minority carriers
3. Position of EF with respect to EC.
4. Also calculate the Sketch the simplified band diagram, showing the position of EF.
4 a. For a Si thin film of length 5 μm, doped n-type at 1015 cm-3, calculate the current
density for an applied voltage of 2.5 V across its length. The electron and hole
mobilities are 1500 cm2/V-s and 500 cm2/V-s, respectively.
b. After doping further to reach ND=1015 cm-3, which reduced the mobility to half,
calculate the drift velocity and current density for the same applied potential.
5 An Si sample has n-doped with ND = 6×1014 cm-3 donors and p-doped with NA= 5×1013 cm-3
acceptors. Calculate the conductivity of the sample and the position of the fermi level relative
to the conduction band edge. (Assume, NC = 2.8 × 1019cm-3, NV = 1×1019 cm-3)
1268 447.3
𝜇𝑛 = 92 + 𝑁𝑎+𝑁𝑑 0.91
cm2V-1s-1 , and 𝜇𝑝 = 47.7 + 𝑁𝑎+𝑁𝑑 0.76
cm2V-1s-1
1+{ } 1+{ }
1.3×1017 6.3×1016
6 A Si sample is doped with 61015 cm-3 donors and 21015 cm-3 acceptors. Find the position of
Fermi level with respect to EC at 300 K. Draw the band diagram neatly.
7 A particular type of n-type Germanium has a resistivity of 0.1 Ohm m at 300 K, calculate the
donor concentration. Assume μn = 0.38 m2/V.s
8 A Si sample with 1016/cm3 donors is optically excited such that 1019/cm3 electron-hole pairs
are generated per second uniformly in the sample. The laser causes the sample to heat up to
450 K. Find the change in conductivity of the sample upon shining the light. Electron and
hole lifetimes are both 10 μs. Dp = 12 cm2/s, Dn = 36 cm2/s, ni = 1014 cm- 3 at 450 K.
9 A 10 cm long n-type Si thin film has donor impurity concentration 3×1018 cm-3, for which the
drift mobility of the sample was found 854 cm2/V·s. Compute the drift current for the applied
potential of 10 V across the sample, if the sample cross section of 0.1 cm2. On the UV light
illumination, the excess carriers of 2×1016 cm-3 were generated which recombine with a rate of
1022/s·cm3. Compute the minority carrier life time, current after illumination of light.