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48 viewsEdc (Akr)
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© © All Rights Reserved
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/ 129
ol ent Ny
baa an Ls TSI Beg
BUTTS Ty IS
Pele mee] LONEST IL To MT Eya}
CNY an Cea CSTE RL AN Brey
en) TOE RE
Pogue
Ay P AOd Nd ‘NL { Insights on
ELECTRONIC DEVICES
AND CIRCUIT
Ex. Manish Mallick
‘edu, ACEM,Kapotl)
[Er Krishna Kumar Jha.
(Lecter, ACEM,Kapone)
Er, Neha Karna
(lecturer, ACEM, Kup)
SYSTEM INCEPTION Insights 0”
FLECTRONIC
DEVICES AND CIRCUYpg™
system cop ton
‘th work out examples
stank Par the stents wl ind the book tsp n studing,
a end the reference boo
Fr Manish Malick complete the knowledge of the subject in epitome, Thus the
Krishna Kumar Jha fuente are strongly advised otto replace the lectures by this
Fr. Neha Kama Pook
Any kind of innovative suggestion and constmctive
ane critcim that might help improve the quality of this book is
Edition + Third = Aathors
Computer + Creation Graphies
79841389148,
ebazar, Kathmand 12 Terminal Characteristics junction Diodes
Bs Phyrical Operation of Dads
Bs Anslysisof Diode Circus
cage BS Large Signal Met /Sal Signal Model ante
nae Sea
a BL6 Operation nthe Reverse Breskclown Rgion-Zaner Dade
ha Ka ve
Ko a fchaprer:?
a BIPOLAR JUNCTION TRANSISTOR
Gopal Bh 21 Opsiation ofpr-Transator in Active Mode (Nomad
b2
2A
Ds
30
32
33
34
Moss]
Graphical Representation of Transistor Characteristics
Analysis of Transistor Gui at DC
Transistorasan Amplifier
Small Signal Equivalent Creu
Graphical Load Line Analysis
Basing BIT for Discrete Circuit Design
Basic Single Stage BJT Ampifie Configurations (C-
C80)
Transistor asa Switch = Cutoff and Saturation
A General large Signal Madi forthe BYT: The Bbere
Moll Model
Models
Chapter: 3,
FIELD- EFFECT TRANSISTOR
‘Stractare and Physical Operation of Enhancement
type MOSFET
Curent Voltage Characteristics of MOSHE
‘The Depletion Type MOSFET
MOSFET Circuits at DC
®
” "pe camne
Ti The Ides! Diode
“an ideal defy «semicondctor device that proces no
‘erent when operated in reversebiaed mode and. 20
oltage drops when operat in orard-biaed mode, Ths
2 torward based die ats a shor irc and reverses
ioe acts as an open crcl.
ae
‘~Rexenstiar=| Termites
eye
sy fil loge
Inte i!
gues1-V cacti cane fea inde
age Regulator
Talis en LECTRONIE DEVICES rent owing through diod@
ose saturation or scale current
lage drop across diode
hema volage and is defined as
svann's constant= 1.38 * 10° JK
absolute temperature in Kelvi
44 magnitude of electronie charge
{nis 0 ELECTRONIC DEVICES AND ARE
racine e e
rma Voge Vay ao 2
oe
anit 980)
oe, Tee lh
|
Dividing ation () By we et
Taling nah logon batnchc we gt
es
wt
rs
Wetnie
TB Physical Operation of Biod
i, No Biasing applied (Vo=0V)
Im absence ofan applied bas the net flaw of elton oF
holes (charges) in one direction is aro, Hence, no current
flows fo basing voltage is applied,
Tait FLECTRONIC DEVICES ANDARCUTTS UES jes of Unto Bi
ret ing ough oda
seth overse saturation or scale CUTER
evotage dep aos diode
shnna vollage and is defined
fs
XK Baltnarys constant= 1.35 «10 kal
re temperature in Kelvin = 273 4a
= nitude electron charge = 16 i
IB toiicmruicreosic bevices aND ere
ete vole Veh lo 5 Stone pie
Get-270
or, lo
ving equa () Py we eet
‘eking nator Iogonbothsides we get
avr!
” aaa
cx. [vn voroasaviois
ysical Operation of Diodes
{NoDimingopled =O)
ieee of apie is he et of Sea ot
Tae age oe deste e200
feetfnotinarg wees ert stotched Bama
a
aracerisics in the fora
iby small for Wi
conducting” dod it
1 approsimately 604g
i, Revene Biss Region (Vet)
The revere as repon of operation is entered
n (Vo is negative and Fe
nV) (5m) in magnitude, the expOReRi
tecone nlisiy smal compared Ml
ecurentbcnes fos a
(cums
Ir. eakdowe Repon
TEV charac ae Sgr) The beseown
the vote at he hoe’ of he LV cove in ere and
Is enti by Vin, hese Ue bec stand for
Ta Analyse of Diode Crete =
Lood ine conse to deemine an appropiate
pin (Gr given ctu is, wovkang point forthe ven
Ip order to construct load tine of a device (die
irl) two tinge areimportant
1. oot ampere characteristics of the devise exe and
ed
‘Let us considera diode ceut as shown below
R
va)
Fig. 14a) Sipe diode circuit
Tals ELECTRONIC DEVICTS AND GRCUTTS racteristics Showing oad I
vin (Vo/R, Vos) aa
aa he current Jo. The sig
on iis cal load tine
=e
a -LECTRON
at SFlECHONIC CES AND CRe
Ua the de asa current of uh ata olny. oO
and that vlage drop changes ty OAW for enon
To begin eraGon,asiume Vo = QV and determine
spe Yo0=Vo_5ub7
lone SOT a5rak
ur teste estmation of Vo, weave,
235 Yes) 09
Pen
1 a eae i aaa
nunca
23nveeat
Ta,
aed
_ Sen ELECTRONIC DEVICES aN GRCoTTS TE ‘hich ae OFF inamutdde cc ope dos)
a7 |
joke vse oe
i515 (0) Heal Doe Model and its characteristics crc
fi, Constant volte drop Medel
Thie she sip model ot the inde forvant
juvalenelal tarateristcs. This asee the vertkal srs lin to
nducto approximate the fast sing pant of the exporcatal
cave This model snp says that forward contacting
sfode exhibit const vllage drop Vo Ths model &
Use the intial phaser of snalst and deste
‘uation of doe fr this moves Vp = OV for 20.
J model shows
Lange or DC signal Model
eal Diode Yet
‘ul for the appiction tal g5 6) Constant voltage drop model and its
the diode voltage doi ae aa
‘Si 0k OCDE RSE Bin ELECTRONTC DGS AND CRECOTIS TET Sele ree
jo. vn o> (de) quanties ie =i to
Small Signat Model
or sal sgl operaon around the de in poy he
ode can sngy be represented by 9 vesitance seal the
Inverse of slope o the tangent oexpenental hearer
curveat theta pin.
a a oa * |
Fig St Cini to Say Small Signal Mode
‘
‘ecewvise- linear model and its chagih :
4 Fig: Graphical analysis of smal sigh model
la CConsider a simple teut a9 shown in diagram. Now, we
Signal mages” (i) and (i) ae caer! AEB Know that
lus -resistanee
ime -
FRO TRSRSER
Trt on ELECTRONIC DEVICES AND GRUNTS @
tuts shown below
1 mina
i
sm and neglecting hig
Wheres called dyramic resistance or ac resist
Now,
Von ¥5() 9 + vow
= Hlo Hie (01R #1¥o + ve)
Ris ()R + Vo Hots +s [From equation
loin) + Vo , WOR
DC quantity "AC quantity
So, the diode equivalent cxcuit can be weiten as
‘i
De equiva cae
R
(ea
w) sa M0 AO
[ek
AC equivalent cireut
> Rectifier circuits
Rectifier is a device used for converting alternating current
(AC) to direct current (DC) and the process is called
rectification.
Insts en ELECTRONIC DEVICES AND CIRCUITS min
1 Galo shown in fgg
(Center tapped transformer fll wave etter:
Fig: Conter- tap transfor
full -snowe rectifier
As shown in the circuit, the transformer spnding i
‘confer tapped to provide two equal volages vi actoat
the two halves of the secondaty winding with the
polarities indicated. During the postive half cycle of the
ac ne voltage (primary sie), both ofthe signals labeled
‘y mill be postive. In this ease, Dy will conduct and Ds
will be reverse based The current throug 1s wil fl
‘ough Rs end back to the center tap of the secondary.
During the negative half -eyele of the ac ine voltage
(primary side) both of the voltages Inbeled will be
negative. Thus D3 wil be cut-off while Dz wall onduct
: ‘The current conducted by De vill low through Ri and
During the postive half cycles of the input Wl packie be Soe
id thus, current is conducted through
During the negative half cytes of @
voltage vj will be negative, which makes ie
‘reverse biased condition
Fig Input and Outyut coaveforms.
and R
Note:The ripp
otage for half - wave rectify
Tull wave Rectifier,
The full - wave rect
oe [ave Weiler utlizes both falv—a
Shae Ptvide a unipolar output, ie
65 ofthe sine wave, nese
sa ptwoee
ener diode Is special type of semi conductor diode which
‘Works ina breakdown felon, Feats #4 simple ioe rhe
‘operated in forward-bias mode but when operated in reverse
breakdown, zener diodes age found to have cxtremely stable
breakdown vollage over a wide nge of eurent lvels, Thus,
the zener diodes are considered as the backbone of voltage
anode [~{ catode
ig. (a) Ssmbol of Zener diode
bridge Rectifier
tier ccut operates as TOO
we ates of the input vole
jus cure conducted thou
ard ale D.. Meanwhile, Bae
snr based. During the negative
Breakdown phenomena
‘There will always be some thermally produced electrons and
holes when the zener diodes are operated in severse biased
male, AS the reverie voltage increases, the free electrons
eve with higher speed. Higher the zeverse bias voltage,
‘greater is the speed of electrons. But, on the inesement of
rovetse bia voltage, the electrons gain high speed and collide
swith the atoms of semiconductor ejecting, valence electrons:
“These free clectrons also move with high speed and collide
with atoms to produce more electrons. This phenomenon
fontinies until igh current flows in the diode. This process
‘is called "Breakdown. Breakdown isnormally of three types
‘Thermal Breakdown:
Th ordinary diode, when reverse biasing, voltage is
{neteased to a breakdown value, a heavy current flows
{through device, This will cause overheating of device
that pertnanently destroys it, Thermal Breakdown is an
irreversible process,
Fig: aputa
Note:The pp
The nipple voltage for full- wave rectiier
1 output wave form
a
sian
‘ett t ELECTRONIC DEVICES AND CIRCUITS!
Ee arene : 1. The capacitors dary
vn by he fet OF nan to Gime period of wove =
{H-The capacitor discharge nary fo small Va.
che higher lg “es
tow a eee ee
ture costicent ove
creases reaction inl Bie
tore zation and 13s mobil on, Be Tanal
row velage And, chen Toad is kept at outpaterminal
hme is approximately equa
Pen skdown: Winsted
i,_avalanehe oT prejonetion ode, the Rigi eaicn
rons das © Te ators fied in the exysal Saeeee tree
jon aS a Tesull some elects
Fhe covalent bord, thus Creating
yar, The ionization occuts
sepleti
fle electron clectrons with valence
oe region, It is the positive tem
PTC) ie. increases in. temperatura
urrent.Itoccurs at high Voll
of eplet
Adown and avalanche Brealdg
Both the zener breaka
% ‘The maximum load current sustainable is
oe
Assumptions: (For ripple voltage calculation)
i, Magnitude of the ripple voltage Va is Ve
(ae< Vr)
Insights o» ELECTRONIC DEVICES AND CIRC poance is eximated ass
eae e sul Find the value of dynamic resistance if voltage is in the
a cal rton | Performan inde 6 ad so pn = Go A Gon
(oro chaits Repsol
rectitier creat th 5 9 eee ernct
ful. IE input de voltage wv Meena
don in the Toad re
igs of 0.7). Vin Ba
‘We know dynamic resist
stato G2 eee
shore
To ff DigVs- 1) 10*10(e07 9-444 104A
Then, equation (9 becomes,
[A diode conducts 1 mA at 20°c. If itis operated at 100°C,
bn te eleven ee Tae
temperature coefficient value = 18 mV/PC.
[068 Chaitra Regt)
al asaime by. (PbOBe?
tion in the load resistor is,
rw)
2 3 A
Solution: AND— Vo You 33!
de ine smccun-ae Og
= 144 mV #
[25 my] a
‘or, u4=2318 «25log2)
38°10
38mA)
Note Vin Vor =nvin (2) e je diode wsed as fe 9
6-07
Sag) = 8.08 mA
ven cit Mas voltage Of O7 Vag
Finally,
ws aera
“THerefove th current Flow in the eect ia 7.89 A.
J. In the given circuit the diode used as its n= 174 and
‘conducts 1 mA at forward bias voltage uf OV. Tid te
‘curent flow inthe cect, Given R= S000 and Vo.
[072 Kank Back}
From igure
to-to (G2) shut be eects In
Be (ise
fabs: { 0) Ayaiarpo ond when Vin 144
naan oo Yin V0 tet)
wee Re~ 100 Where
ase
SHS rama’
hen, fom Gy)
Vue= 56+733%109%20- 706 Y
huh bx 733mA-2mA= 713m A,
‘Also, tll oa,
Viu= Vso text
56+ 21090
ean
Design DC voltage repuato for 6 outa, Gen as
6V at r= 20m, ms mA, Pc HOA and oe The
normal input voltage 1502 3% DC, Bnd rn
Ae em cayest ean delves tothe lod. (7a Chalea Repel)
lution
Veo + ts 4
Ato load, Is
‘Then, from (i
Vu
633.3610 2086 26V
x= 383-2531.3mA
Here,
Also, at full load,
TEM) sitsotictione DEVICES AND GIR We know,
Temax=-
ration to breakdown
»
»
Whe Ye 2050, n tht ce alo the ener dite sould
or, S-240%ReSar2AI050
on, Rea
feemio0
Wien Vi= 195, in this cate alu, the Re should be
selected ina such a Way that zener lode should not burn
Vins lat Vantlet
or, 195-223.60m109R.+ 581223.60"10°%10
on, Re51270
So, the resistor Ry showld be selstd in between 51.27
023000,
lek,
or, We bee
pSies= QU. 2) AS22N ANA
Since Ris between 51.295 ADA lets choose Re= 100
2.649)
“Then fom () and (i)
R2IBa
and R24430
So,R.= 2009 he circuit piven below, the DC power supply Vec=10-V
superimposed with 60 Hr sinotid of 10 smplitade
Beth amplitude ofthe sine wave sigalappering wr from the given cireuie tert
(073 She tes Ta)
fete a
the circuit given below, the DC power supply Ver=10V
4s superimposed with 60 He sinusoid ef 1 Vip solitude
Clete the amplitude ofthe sine wave gal appearing
cron the doe fur tne ease A) =A) KO. Acre te
valtge drop of 07 V in the diac”
[G073 Chaites, Regs]
tation
According fe question, drawing the input wavelorm,
‘Now, amplitude of sine wave signals appearing across the
diode will be 0,7 V as shown in figure below,
| For case () re
| ane wave signal aPpeating
We know Ts nereases by 7% pe degree cleus. Then we can
oyinn figure below,
Tae P*
hecsten(taR)
or, ere =104 (2 +355)
bee = 1067 nA
Forex fi)
‘vrow are KE 28 10
+ 73 +60) =2872m0V
q 16x10
Then,
Xo
To= bao (oT
= 10.57 (2. 62872403 1) -0.355.8
‘The 68 V zener diode is specified to have Vz= 68 V at Le =
5 mA, tz = 20 and Ine = 0.2-mA. The Supply Voltage V" is
For Vec™ 105 V
es nominally 10 V but can vary + IV. Find Vo with no luad auch
Vu = Vee -Vo~ 95-07-88 V with V* at its nominal value. Find the change in Vo
Q The leakage current ofa silicon diode is Is = 108 resulting from connecting, load resistance Ri that draws 2
current [, = 1 mA, What is the minimum value of Rx for
‘which the diode still operate in the breakdown region?
0sKo
and the emission coefficient is = 1.6, The
jiuntion temperatare is T; = 60°C, Determine (i)
current Is and (i) the diode current Ip at Vo = 08 V-
Solution
v
Here,
(Change in temperature (a
(02-03) (82> 0)
= (60-25)°C = 35°C: a +5410 etpez0
an b 101 (0sr saorees
ovaty By = G8 ssroma
i
say Venominal values
Vo“ let Vm
BF, Vo 6346 «10? «2067 V— 6.23
{Change in Vo (8Vo) = ? Connecting toad resistance Ri
that draws a current, =1 mA
av.) = 7 Connecting Iagal
v A.
in Vo ON ea md
mardeave aU" 2 for which a
ion v= gy O5Ko.
wo ac Venominal value
v 03Ko
v=
Att connecting the with Ik = L mA finding 1, fom
figure,
htt
oh bbl
ve with its equivalent
Changing above figu’ at seve = (6.346 —1) mA = 5.346 mA.
ye 4
ee bet Veo
346 « 10 20 + 6.7
Here,
Ve= b+ Vo
Veo =Ve—by
=68-5% 10" x 20=6.9
lnsights on ELECTRONW Gy of the three terminals (emer, tase and collector) nox
3 semiconductor device which is Bipolar Junction Transistor
tis an electronic component mainly used for amplification
i switching purpose. As the name suggests, It is composed of
junctions amely, emitter-base junction and colletor-base
jon, BIT was intradced by Shockey in 1948. BIT is called =
rent controlled device where small current atthe base side is
gal to contol the large current at other trials
‘bipolar junction transistor (BF) isa pecially constructed three
inal semiconductor device containing two en junctions. The
He principle involved i the se of the voltage between {wo
nals to control the current flowing in third termina, tn this
pe of transistor, the current condition is due to both electrons
fh holes, which isthe reason forthe name bipola
construction and principle of operatgat
de in forward as well as in reverse
the terms Barrier potent
jometry and Doping Level
{BIT has three different regions: (i) the emitter (fH) the base and
fi) the collector. The base region or the central ayes Is very auich
rower than the outer two layers. Also, his region is much
tly doped in comparison to other two ayers The emitter
egjon, with larger arc, isthe most heavily dopedegion wile
G collector repion has the largest area and doping evel with a
ue Iying in between emiter and base region, The emer i
vrmutter as It exits electrons ot Twiles, While the collect
emitter an
2A diode is connected in forward biased mode Witt
oltage Vs = 5V in series with a resistance of SOU
current How in the circuit, Given data ares
conducts ImA for forward bias voltage of O.7V andl
drop changes by 0:1 for every decade change in
Draw a small signal model of the PN junction
dave te expeon To find the smal
resistance ot diode? : an
3
4. Draw graphs of IV characteristics
diode and zener diode. Dray
junction diode
of ordinary
ac equivalent
‘and derive its ac resistance, pA ; Fig Circuit to Stuy Characteristics of CE Configuration
ers the voltage eel ie wo For thicenntigration the input voltage‘ applied to ths boas
Ge abot face (B) oF BIT, The Following nd the output is taken at the collector and the enter
& ter > Smputana tp
i junction | CB Junction |
ope | #5 Junction | CB Junction
| eaeonr | Reverse | Reve
pas oi
[Reveseadive| Reverse | Forward
ee | Forward | Fig. Input Characteristics
MEN sitsmttccmowepences ano GACuT Treg mELECTRONICDINICIS ANDGRCUNTS TEL Fs
and comespording Ic are noted
Becsise, lei not held constant, the shorten
between depletion regions draws more charge carriers fg
although Is is constane 4
the emiter 10 collector. So,
‘eves to somo even! with increasing Ver caucca the sig
ff commonemitter oufput characteristics, This slope j
Sometimes formed as early effect. On extension of slope ly
towards left they meet ata point on the horizontal scale Th
Volage this point of intersection is called early voltage
So, the de current gain is given by
Sutputeueat fe
Ty ahs valid only for active region
‘input current
i” Insights on ELECTRONIGDEVICS AND. CIRCUITS
Input characteristic
ys /
vee
t=
Fig. Input Characteristics
= Vei(¥)
To investigate the input characteristics, the eutpat vollage
Ven s kept constant and the input yoage is set at convenient
levels At cach voltage love the corresponding input cursent
recorded,
Ves, more input current flows when
Fora given inpat voltage Ves, more input
higher level of collector base voltage is used, This i because
TaamTTECRONCDETCS ND GRCoRS — TN output characterise
Coto region
Pig, Output Characteristics
For ploting eufput characteristic, Ie is held constant anda
fonesponding Ie values are noted for Vea
E adjusted ¢
convenient tes,
Fn aie z0-lostllows, This is because even whee
externa
Rae wollage is zero, there is still a bunif
Hoyo aap Be llstos base Junction and ts ast
Tlecarbg 80° the How of charge caries #
Wibclion bas to be forward biased.
ig. Circuit to Study Characteristics of CC Configuration
he circuit arrangement in figure above shows that the
collector is commen 1 both the input and the outpst
terminal
Input characteristics;
|
Fig. Input Characteristics
The common collector input characteristics are quite different
from either common base or common-cmitter configuration.
The difference is due to the fact that the input voltage is
largely determined by the output voltage Vex Le.
es Vat and, Vie = Vez= Von Fig, Output Characteristios
The output characteristic
se 2 plot of emiter gf
Relationship between 0 and B
‘rom common emitter configuration,
by é)
And from common base configuration
efi)
1 Operation of npnransietor in Alive Mode (Norm
Se
es
te
1 Operation of wpm in Actie Mode
emitter junction forward biased
{ie bases more postive with respect to emitter and the base
collector junction is reverse
respect tocallecto)
jased (base is less postive with
onward bias at emitter-base junction Reduces its barre
Potential ancl as a result, electrons from emitter flow inte
tse. Holes also flow from p-type base into ype region,
But, since the base gion is much lightly doped han emit,
lange numbers of electrons are accumlated in base n2gion,
which could not Feeambine with holes of base region These
electrons behave like minority charge carriers for teverse
biased collector Dase junction, Hence, they Slow io clleston
region a5 minority carrer current, The reverse bias at the
collector- base junction causes eolletor-base depletion layer
fo penetrate deeper into base region. Thus, che thin base
region becomes thinner, As, @ result, the electrons emitted
{rom emitter region into base region almost immediately
zeachos the collector base junction where larger pottive
collector voltage is present, causing almost all o The external p
econ CUTENE Td
ie fom Bi acess in the bage,
ee i ig 2.2 (Eft of temperate om the charactensticecarce
ferewehe “= Lena)
of e+ 99% of 1
ee
22 GaphealReprsentation of Transistor Chay
igre shows die
exponential relationship and given by
CS, Which 4p
> Ves)
eke!
Fig-22 0) Characteristics curve ofa practical BE
is dencal to te diode
relationship except fort
of constant, The le-Vse and ly-Vix. chy
exponential but sth different
/P for i For Vig
negligibly small.
‘The voltage Va. a postive number, is a parameter or the
Particular BJT; with typical valves in the range of 50 Vto-100
Y. Its called the Early voltage
laracteristics ai
ale cntrente; Ifa Ula
than about 0.5 V, the
aller
2.3. Analysis of Transistor Cireuit
a Traneston Ceo eae
The vohage arose the Analyze the following creat given Woo, Ki
aoc ins te eniter base junction dea 5:3 KQ and = 100 for following diferent cases.
i. Casel: When Vis =0V.
Case: When Vie= 4
fil, Case: When Vs Solution
Far Case I: When Vos
its and the
he base i a 270 ter is come
seth Rete emer base junction Canoe
se emiter corent is zero. ASO, the colledgll
steion carat conduct since the ype coll
tered through Reto the positive power Supply wh
ype lus sat graund, It follows that the colecter gig
Anil be zero, The base current will also have to be zeal
the transistor isin the cutoff mode of operation,
The emitier voltage will obviously be zero, while the ail
vollage will be equal to ¥10V, since the voltage drop
Reis zero
tel
BV
For Case I: When Vig
since the collect connected ehrough Reto the *Wee=10N
power supply, the collector voltage should be higher than the
[bse voltae for active mode, We have
since the base sat #4, the collectors s reverse biated by
53 4=13V, andthe transistor isin acive meds of operation.
as
or
001 ma,
[Assuming activesmode operation, weave
Ve= Von Voe= 6-07 953
a
I
TeRe= 10-1647 =2480 fle= Te
since the voll ivr voltage calculated appear: to be less than
the base voltage by 3520, it follows that cur assumption of
active mode operation is Incorrect. Tn fac, the transistor has
Now, weave
Wo=Vec
to bein the safuration mod
53Y
Ve= Ves -Ver= 6-07
53
55V [:Veua= 02V]
sa *Ve=53 +0,
Vco=Ve_10-55
Gee ay OBA
[pe Ts-e7 16-096 =0.6bm4.
Thus the transistor is operating ata forced B of
ae
Pomd= 5 sn amplifier
1g higher or
jeCommon Enitter Amp v4 a quantities wehave
Js upon the forw
From cic diagram we have,
Ve= Ver=Vec
HereVe> Vi foractive mode
Thefolalintatanous base miter voltoge vs bee
{nlesrsprngcolecr current iis piven by ‘2 Base ac reshtance or small signal ae input resitanee
between base and emitier looking into tase,
Sus ‘Total emitter current
Ie
aaueueee
‘ashton ELECTRONIC DEVICES: F4g2.5 (a) Complete or High frequency hybrid mol of BFE
From figure Fo lump resistance = 200 [ow tens of 2)
oes = 2K
Yeu tv =Vee= fet ke) Re 00 KE. (usualy the effect of is neglected)
Vor ¥ a, 40M (usualy its effet is alo neglgibe)
‘Compan ac to ac quantitie few p= SpF (unction capacitanee Bebneen «0
ask and base duc to reversed bianed CP jntion)
a C= few tens of pF = 30pF tffusion capacitance developed)
(ic estputvotiage due Wo sorage of charge dffssed fom emer),
fre tapatvotage “8°°
Therefore voltage gain of an amplifier (As) = 4
negative sign indicates that the output signal vollage
out of phase withzespect to input ac signal voltage.
‘Similarly eurent gin (A)
‘nto ELECTRONICDEVICES AND CIRCUTTS Fig25 (Single x- model ignoring
Pano:
Fig26 (a) Rasic Crait t Study Led Line
The Creuit to study load line chosen nig 6 a).
Consider output characterise eure of
ae
> ' m1
Sit
+Fig206 () Output Characteristics showing load line and
‘operating () points
The staight line is called load fine and is guided by the
‘expression Vcr = Vee Ie Re such that Vee = Wee at fe=
Inhfits on ELECTRONIC DEVICES 27 Bising BUT for Diaciete Creuk Design
ea Transistrs shoal gioperly bias in onder 6 ube deviee
ri diene aa hers an amplligy or sxclding Togs AieTAHeC ae
=a voltage and de cute are applied to Set the pean pats
nfs euch that impoper operation of anges ay
Consider replaced
the operating points are gverved with base cum
spol volage Voc constant [a his case. Q-point shits mons aan
folef wih the rcrease inthe valve of Ke | veaveidd
rious ways 10 fx an operating point of a
‘tansstor, which are discussed as below:
Ty and
or bia
Foved biasing method
CCollesior feedback biasing method
Voltage divider biasing method Fig 2:7) Fived Bis Cir
Fromthe cet we
Ver Iokt Vo
Shc, he sapply voltage Vec, the
iter voage Va are const
resistor Re and the by
the current es also consi
andthe networks called vel bas citcuit,
And from he fig
a given
lasing method is
This method
tobias a trans
OF ang is ene
Simplest and the worst method
#8 Operation because
the Q point.
"sis
=
efor he tempera chang ae 9 change een the
ig2.7 (Emitter Feedback Bias Creit
The circuit diagram forthe etter feedback basing is shown
infiga70y
Thus method of basing is use to reduce sli of Opals
ddue to Band: thermal changes, This creit has more able
tng poin than tha of fsed basing method
=IeRy + VeetIeR:
Voc =Vir“TeR:
From above it ia obvious that lc depends upon f.-To make ie +
Jess oF not dependent upon sts necessary to make Re very
large. When Re becomes very latge It might take the Q ponnt nae not ver Si
pone ay
as
me
Re =PRe
fea
J Giasing method, For design
iv. Voltage Divider Wiasing (Univeral Biasng}
Is also called fndependent basing method I the mat
be biasing, circuit among the dieussed methods for
‘alous temperature conditions andj value of transit.
ig2 71) Collector Feedback Bias Circuit
titingeam for
ollectarfeeack biasing is shown
Zit dimit hs the base resistor Ry connected bees
fir collier arc bse terminals, which signifcanl
‘improves bss bility as comy method,
pared to fixed bi
From the cr
twehave,
Vea Inka Vag
*Ver~lo+ i) Re
80, then the
Wiener
hop across Re incre
his ease, an Fig2.7 Voltage diode bias
eres in Vex results denrenoe in its equivalent thevenin
nits on ELE
ONC
Sx, Tris FLECTRONTC Which ead tof
pression can be reed or, Ra ~3r; basing becomes
suc a/R the j 3
The voltage divides biasing method can be clesigne
Si Basing Method and
Firm Basing Method
SHE Biasing Method
To acheve the stiff biasing the fo
fat
ing conditions aul
100; ng Ale
Re2 100 Fie Ry = Ry < 0.01 Re
Fim Basing Method:
egal inf basing muthod the value of andl Because Ve = O.1Vee Which means it is much smaller
tre atty tll dueto hich the input impacto compared to Vee, Henee, Vis3p also tach smaller than
the transistor circuit becomes very small and it mae Voc and itleads to Ry. = Rs, Andbiasing becomes,
Fen te Hts case firm biasing is used
To achieve, the fim by
m Bissing method, the follow
Contiionis uted ‘on
Ra
OF > Re]
‘Game Gain (A
And,
Fig. 28.32) Connon Collector Amplifier irit
‘This aunplifier 1s also celled? Emitter Follower" beca
‘output voltage is almost an exact replica of input voltage with
respect to magnitude and phase. Doe to high input and low
output impedance It is used as an isolation circuit for
connecting a high resistance souroe tolow resistance load,
com equation i
Now the expression of lent circuit for Common Collectop
Fig283 (0) AC euialen "
% Ampiifierssing T-mode
Inpat Resistance (Ra)
Fm gure
Re//Red
=i [e+ eR)
Diving on both ses by we get
Now, weave,
t+Re] where, Re!=Re//R,
+ Re/ RO)
vo tie Ra
+) (4 Rr} pet) migRa tie (et RE)
+ KERR RR OFFA rice eegeal
Voltage Gain (A,)
Frum igure,
MnELECHOME DICE ANG CIRCUITS Crecant tats coeecct ey ae
Epuicatntcireuit for output current
ta RV/Rs
Active Mode
Satuwation Mod
Rou Rey fgg
(urrent Gain (4);
Wear
fm cue’ di
ght
BR Fig2.9 @ BY as aSwiteh
ee . ‘Out of these modes of operation the cutof! and saturation
Be roof operations fied open IT at ae Wg
=e Ge) ‘eansistor is in cutoff mode, it doesn't conduct any current
1) rc node =
ne bn ee 20S gl
Eee mt (itcuit diagram for the described conditions
Operation in saturation mode
c
Vee can fe inre
nutes dinetly grounded,
into active moda
sing the input Vy gl
ae
q
Inactive mode For cutoff ode Forcutffmede
Roo
tenth tl
om
2 ae
=| oven
te
a= (Foractive mode)
Als,
i
feo IeR
Avs leis curent can be increase by
far Bore mpreon tht calaa oe increases yt
pes tse cent, When fc te
CS aa
Frecung eSM erst rgd Ur
TS ND tinaae EY 2c pat
Monturation mode, i
inet Ve will decreases. This
Ieansthatenlect tae decrea
a2 mote fowan e F FSsistor becomes mote
Sten Br Teor entre int deep
To increases Ie aly Vcc] 9.088, 1088 |
|o1on.c.om |
Transistor stay a
FF. Os OFF
OLOFF.O.09
3:40 A General Large Signal Wode for the BIT: The Ebers:
Moll Model
‘A tansistrs model has been proposed by Eber and Mall
‘Tesrnine the tnodel cf a faistor the emer base ncton
Considerec a6 pn junetion diode, Then the normal current
through the emitterbase jncton and the collector ave
rncan be determined 3s
junction
iag = role EY, o
jes forward emitter current
reo reverse saturation emir current of thejanetion
‘Vous voltage applied seres the base-emitter janetion
thermal voltage
Due to the emits forward iprentcoectrforvard CHS
Jr also flows through the collector basejuneionhich : Ve chanel gu
Moench Ni hata etre SEEREE ote
mand pinot region,
Vo) avi,
at the point betwen shrine
When Voo =Viie (¥
Ys ,
Pee NIB MOSFET operates in Onnvc region (Tine
“regin).
Bt for EMOSFED is given by following
equation
small 30 Viescan berepiance
Now equation (i) becom
Recie centlled by ¥,
$0.10 aid sot
controlled resistance age
When Vos is jnerensed sificen
channel is pinched off Le
8 that Vay < ve
VeosV:
of, Vos~ Vass,
ot, Vos (Vos Vi); pinched oft
‘The boundary between the triode region and she saturation
region is characterized by
Vos = (Ves Vi) boundary.
Beyond this value of Vox In docs not inerease,
Put Vos Vos~ Vein equation fi) weget
fo yosrer provides 2d
Mi er age Vn a
ee
iene
igh 210 transfer Chaonteristic of EMOSPp
She Doplaion Type MOSFET
Bios epiefon DP OSFET an N cha
y)- Then
eT
Beet sim
at ine!
Fee eh ero soe
Belle Nchannl, Then
ee) rnin
domintge)
les of the channel ¢
of E-MOSFET and the mye
fee depletion MOSFET has a physicllyimmpiongg
Bie Ta wllge Vis sepplied terween drain ay
Sete A ttet Harr for Vox 0. In other words, theme
po peed fo doce channol unlike the E-MOSFET
hhence its conductivity
Gaelet Ves asin E-MOsrET. App
by attrcting more
can be
ng a positive Vos,
rc electrons into i
also apply a negative V
fet fo be repelled fom the channel and thus channd
The negative Ves is said to deplete the
which causes
ns
ribed
For D-MOSFET
=KV
nN
oy
s
Fig 33(6) Symbol of N- DMOSFET pramjeremarctrsti
rps
Vos Vit Vn =07 40,
"etn oxy From figure gate is a
Fig 33 fd) Dra characteristic of channel dep
enhancement MOSFECT eee
34 MOSFET Circuits at OC 4 v vs
0 that MOSFE
Design the cic
iA and Vo= + 05Y. The Ni
Ke = 10 uA/V2 1 = tum and W
‘Ghamel length modulation effects, (i.
Ta ask
Note: Here we kee;
*P reference value Vee me
‘keep Vss = 0 then ae
value of Rs wil be in negative)
Insight on ELECTRONIC Vives Vos ~
Fig 251) MOSFET 05 0 Arplifieg stick
oopeate MOSFET 8 an amplifier it shou moins
segs NOSEET 2 a
es i ofthe common so V
Tet. Basie structure of :
sown ig
Asso above Vos 8 ;
Be gh nt il fo be apie
Wee The output ten rom the drain en
aay
Be KV Vy?
2K (Vea-vi]
Tans-conductanceo
he MOSHE
tts only
the total inst
aMIREUS dain lage ig
vo Voo “Re
Ais tied ralege atthe deine output vet or, Yo* vi=Voo= lo High ag
Yo= Voo-toRo = (oo oR) ay
Reese tlatMOSFET sin saturation region, Thus the signal component of ian val
Vos? Ver-Vi va “ido = -gavgRo
Now when yp isapplied
| ok Voltage Gain (a) =
f Matbllinsantancous drain current tout volt
40=Kvcs-v
input voltage =~ SaRn-
Ths relation (negative sign) shows tat output Sena) BE
out of phase with respect toinput inal nd sampled
'nsghs on ELECTRONIC DEVICES AND CIRCUS A
uae hod (Drain Feedbaok Diag),
Wao ine pt est (0). So, 0 voltage yah
Biss He Mismateste pte wil boat he sn pea
fede i
Teele
Vas=Vos* Veo fo
PPAR) Ves + Von,
©) Forsau
Signal (AC) Equivalent Cissy
er a Coo e
ae mn Souice
MOSFET behaves
Me at the di
resistance is very high i
resistance high
‘erminal The inpa
So we can repr
nuivalent circuit shown bw i
Fig.E-MOSTET voltage diider conf Itgnoring the ete
te oll? ek)
Za
fae.
1 poK>> the
[=
wr Re,
AES psd by capacior then Re
0.50, fre ()
a
ICES AND CIRCUITS
so FET is in saturation egion
1o=K Nos- Vie
1° eh
on, lo =n Com (Ves pp
assume Vor= V
1
I= Fs Com
Vi then,
2x80 10m
\ [290.2069
oay
Ver Vow =06+04=1V
Vv
{nsuts on ELECTRONICDEVICESANDRCUTIS TREE pation Field Etec Tension
jun ey
ES amplifies on
a Te basi trctuat
own below
jesthan gate voltage MOSRET
Since the drain wotage's & mE,
trode region of P2200".
s
p=K(2(Ve-¥).Vos
Fis. 3.7 (a) Construction of N-JFEE
1m
=puCoq_ [2 (Ves-V) As its clear from the diagram that
JPET consiss fn ype st
ae : ‘ab, Opposite type of seni ondutors doped utetoa
| =ZR ap P(Ves- V9. Vol sides of the slab. These doped semiconductor lave fureoy
as ‘Gates’ of the devise. The {0 fats ame intemal
Be ahi ‘omni to cal ter Meta coach oneal
A ends of the channel and on the fop of gates 8s shown, One
=1{8-1).04)
end of the channel with metal contact functions as "Source
(dma |
(S) and other functions as "Drain! ©).
Tecan DEVICES AND CIRCUITS "iis ELECTRONIEDEVIGESANDGRCUNS 3140 Operation of JPET
Fe37l) Drain characteristics curs
Tiansfer characteristics curve
coc
Se removers an cacuns ——
Vp Since
fect To, This vay
Ioo= lo Toa forVeg=n, :
eer, ain £9 SORE hosed ge
w, et us intense Ves fom 0a As Vos incase
ee UBS ROMER choes anc
wwill get more and more rebate atthe drain side, When Vo,
i dept on nerensing Eich fein sg aS
{de wil be reached estes an ee
(valid)
Therefore cireuit operates in pinch off region as
supposed earlier,
Insights ov ELECTRONICDEVIGESANDGIRCUNS (SRNL Appivng KVL ininput oP
Vs0
VorVos
ee, Vos VeVi)
And, *
Vis=Is=IoRe-. (3)
Fromequation @) & (3)
Ves=Ve-Inks
> 1084
7, 7000 lo “16-4810 ggg ey
36 « 10°152 5010 ine gag
ey 3
solving above equation we gey
solving: es
a p= 089 mA or Oma
forin= 0.89 ma,
Vs =IbRs
= 089 «1096195
=504V © Ye
= Invalid => NMOSFET OF Qyg y, \
%
Forlp=05mA
Vs = IoRs
=05 «109% 6 x 198
**\’(S Vc) = Valid MOSFET ON Because VesVes
‘nights on ELECTRONIGDEVIGES ANDGIRGUS bio Welnow,
Ves=Ve~
Alo,
be
neo Tp a KEL Te IKE Ral
Ofal aae yctt =-av My
et Gi Uo mA and Vox \
ere [087 Asha
Resa,
aR Voon4SV
or Ves=45~ 1005... 1)
-asunting FET operates at pinch-off mode
Bete xa
Voras
oR: [Vo ToRe]
Fo = ToRo- eee
Woo“ Vee +108 RO gay
testing fOr PINCH Off region
De eV
£592(65-1000*547 40) 4
4592304 (Valid)
eae out ASSP SMS aang
rind Ioand Vos. Given datos ap
{066
™AYe< sy,
Dhada ReBlA 96353 Regula)
3.6V (alse)
Here: bur assumption snot corract as assumed earlier.
assuming MOSFET operates i Son SBR a,
Ib=K Ves- Vi?
or, Wy 05 (Ves 4p
1, Slo= 505 (Vos~ 1
or, 6-Ves=25{ Ves? 2Ves+1) {fom equation)
25V ost - BVes #25
BVcst - AVes -35 = 0
Solving above equation We get,
23 V (positive and valid) and
ico-0.63 V (negative and invalid)
Insights on ELECTRONIC!
Therefore JFET snot operating in pinch-off region,
Find the value of Ip and Vos for the following circuits
Given parameters:
Wel, K=05 mayve [071 Chaitra Regular
ICDEVICES AND CIRCUITS cee Mon thon en
jo= 03" 10%8 641051
zope =
ovo = 16-4810 36H,
assumed enrtio ox 106le? 50% 1p
ing above equation we get
cs I
Sag feo and Von Als dial = g9104A = D59mA ang
xd small signal ac 5x104A =05mA,
son af operation 3 E iv alen 5
fig region of oP
eye dns We = V7 K “05. ™AV". 1072 Ch
egal)
I
for[n = 089 mA
yer
9 «1036 « 109
=524V (@ Vo)= Invalid > NMOSFET OF WES x cn
5mA p
=05 +102 «6108
=3V (< Vo) = Valid MOSFET ON because o> Va
So valid [ois 0.5 mA.
Now from figure,
Yoo = foRp + Vos *IsRs
‘sights on ELECTRONIGDEVICES ANDEIRCUNS EIN
a a
WMGOELECTRONIC DEVICES AND CIRCUITS: ig: Swollen ac esuioatent circuit
rm the following circuit. Show Q pg
@ Find oo and Vosof [2075 Ashivin, beat
Vesiow = 10 V
18Mo 1 82kQ
= sbilteiEteemmoNIeDEvicES AND GGUS
12.(169-21.32 1 + O6724nge
0.28 ~ 2.5584 To + 0.080688 1
(0.080886 To? = 5.5584 Ip +9098
Solving above equation we get,
Ip=37.376 mA or 6.724
7.376 mA,
oR: = 37.376 » 082 = 90.6483 Ve (eva)
724mA
ioRs = 6.724 x 082 =5513V- M4 dete i, a
+
Cass t
jena Sow Hguoe Tag OS! rer ge
ierefore a OV, withthe gue SP rc
bias point for 2 half cyte, Obvigage” “27 fn
present. Two class B operating sol Sehaleg
operetion on the nepatveqae et
necessary. The crmbines tan
output for a full 260 of oe
conection is relered ts Oa
class B operation by isa dea
cutpat signal since reproduction ot he
for only 180° ofthe outpt al owing
¥, nanper ar bs Hest de
ANA fase Da a
cus at
shez tage eve of
pe cory wag eatin stl requires g nl
ee AB ase fall owt eve :
se el cot
toe power ®
sgn 5
ge Amor class 8 operation
Fig Oxtpstweform for Class AB an
fe lass Te ontput of a Lies Co
Pott
pean ates than 10° ft
tal oh a fue Fesonant) circu
and will opera
which pr
toned or
ides
is therefore
pecia) ares of fared circuit
comaurications.
Yo
Be
rs
5 Output waveform for Class C amplifier
Th pe
IECTRONICDEVICES AND CIRCUITS
cass D: Thi operatin
sion using Pulse
orator interval ana Ores) en
4 al technlaies rake i
gnal. The major sas
fps si jor ada
iret the amplifier "ON ga
snfervals and the overal ei
hi
me
Fig: Output waveform for ClassD amptipg
ig: Outy for Class D amp
amplifier efficiency
‘The power amplifier eific
e cy ofan amp dnd aa
st owe to pa owe ea
5 Ao cos. en eg
fhe ampli: wih dasa al
jee, uses a. good amount of power fo mans Has ep
wih no input cignal applet Ths eas iE pa
efficiency, especially with sal inparsiga ene is
2 power is delivered to the load In fac the minimum’
afficiency ofa clase circuit, occuring othe ast aps
voltage and current swing only 25% witha diet aris
fed load connection and 50% witha transformer omasont)
the load. Class B operation, with no de bias pawet fer
{input signal, can be shown to provide a maximus)
that reaches 78.5%, Class D_ operation ea eh
ing from
going pore Sie AS AD ls hot
le ale falls Between they
Sys) and 785)
point
pin bs
fail
-ampifice lasses
WPiGA2a) Series Fed Class A Amplifier
Ts ll serie fed os toad Re
f Is connected in series
With ransistor output,
Pe eter series fed (large signal) and cl
Be Yesion i thal signals handled by large signal
Ist x HECTRONICDEVICES AND GRGUTTS
Bion! 19 te OF wa
pice fod CHC nog
DC Bias Operation
bine aot by Vg
with the collector curren then
wit the ing
sh
with the collector eer vag ta
F420) Trensistor characterises Sogo el
int
First DC load line is dean sing ae of Nese Re
since thoy are constant (es Rese ens)
‘The quiescent point is clenaed use aS
IF the de bias collector eurent i set suepetet ep
Possible signal swing Geswean land Ne
Tnights on ELECTRONICDEMIC ~
sawing wil Be POMBIE. Addit
ee the largest Voltage sn
the aura Vex) the Tnrgest YoIARe aiving
sorages
posible
win the
consi
fetish:
Pomjone for the given clea
reat are
AC operation:
Pete cect the output Will
ee and cures
applied to the ampli
is acy
Spgs regh eof is eving. For he os
ee cna che
voltage Voc
Be AAO Ampifier input and output signal variation
Male forClss A amplifies
pat power from collector,
np ltr sappy Ve,
) = Veo lalavg) =
pode
Teg
Wet Re
ke Vea
“Bh
‘Therefore, mov = 25% fr Series Fe A am
%
t
Power supply
evel
Class Ade
bias level
Fig: Output wave]
— Respir tse
ov chs 5 oa
riko) ok
ene of s
Soi
= dee ese the maxi Sh Pusey otPUt Power ob
tarsi
sus. efficiency of amplifier
Note:
rom above equation we Git ste ai ane
fed circuits will provide effisenses of asshles tun
Part
Hlre, fom gure
Neren Vine
Ne )
Sie ( ‘Transformer coupled class A amplifier o //sagl ene
pepe . power amplifier (Ideal easel:
oe (i) * It has better efficiency of 60 because mn Dover i)
Tle power sipped by e source vvaste in collector resistor Reais ietes
+A mocking tansiormer (cepdown) & pms
couple the high impedance lledot ereb!
impedance load,
Insights on ELECTRONIC! Fig 42y transfer Coupled Class A uring
She earstormer (26) winding resistance determines the g
Trad line for the above circuit. Typically, this de re
Gel ideally 0). Ths, 209 de loa line sa straight enn
Tine
the efficiency of trans
ence y sme eou
Beteal cace 0. whom Vip» = Veg na amOIBssa,
gqeral efficiency of Transformer Coupled Gass
snplfer:
Vera,
‘ets ELECTRONICDEVIGES AND CIRCUITS gnmtomer out 1S ASMP
We kom FEN n+ Ver
me
FF operation is provided
for biased jst OFF, the
is applied. This a.
urrent fOr any gg) 2, Bak ve
the ci :
one half-cycle and the dhe
sipral low during the other halfoydl, eps
(General Ecercy
poste hal-cycles the combined gaeat
of output signal. Since one pasta
I high during
1D. Gilet the efficiency of a transformer coupled class 4 Bo re tase
and (i) Ve =6V.
“Solution
Webave,
Forclass A tansformer couple
cele. The power transistor used in the pes ella
ao ‘Push-pull
B operation of these transistors povides gee Ga
al
a
a ae
Dera? Vein
065 Chaitra Regula]
od amplifier {3 su ami
Advantage ofst0s1/AB MPF er thy
ep ee peak ;
Geptes be Bor) ES
Pole)
Tat Vox be the de source \
Ferpeatexpplied by the de source isthe average a
escoutpateureentshich may be express
ues Poe
sun when CUD Wolnge O65 of gy
E ium poe
9
capet wollage the effideney of qua
minimum which may be expresatay, snail
Se aiet source's,
(Prom enrao
e
Ves {From (uy
100%
Poa
eer (A) 5 (dc)
Norn
fp Bor V
(hss B amplifier circuits
A number of circuit arrangements for oi
al
Pee 27 > general formula a
operation are possible, ce Fig) Ph
Bese! of input) phase the
pupled Push-Pull Stag.
Transformer coupled class B push pull amplifier, ~
Fig 47a) Pash Pull Cio
sit
Fi Oth ero ora,
over distortion;
cross: tort
Push pull amplifier has optima
exceeds approx QV or (8 Ths reals
0 positive and negatively Tse
‘rossover distortion
input voltage
Sipping betway
Sealed timination
sappy earn Hows at 26r0 excite
by cure
point should
=n
ceicieney
Hig 470) Composite Characteristics for Class B
: amplifier
Here,
Pile) —bVp
Be Wee iv
mm Zz
= maximum p
TP) = Veet
sible output power
2Vec
eee
PMee lor = Veo 23
2
Voce
tas)
‘nls ELECTRONIC DEVICES AND GIRCUTTS
pply slight forwaet! Bie to en
er 1665. complementary
forgoing complement, 7
pat
Trangia
iB sar
jc
&
Fig.4710) Complementary Symmetry pug Pl apifiey
In
a
ine
+ Asingle input signal is applied tobaseofboh tars
* Daring first half cycle Qi (api) transistor ville fnyand
biased as it operates in active mode while Qsisateuall
So current Ic flows from transistor) tolosdio gn,
‘nhs on ELECTRONIC DEVICES Dames ea
ee
=
Be coon dn
tages eo bth
eer.
feed
Theetect of enssover distortion on
ang.
= pauses
PS 47) Effect of Crossover Distortion
Asis or ELECTRONIC. DEVICES AND CIRCUITS.
Ia $7 Tremor Characters of Class
ca olf a! catrut volge is
47 9 Reins Crosson,
Peden
10
ls bene
A. ore praca He Ao
ctl metic fo
2210 base
one hal
This mode of
lift, Where a
resulting in less
snanplfier may be biased at ade lve alee
caret level of loss B amplifies and ste
i dbtortion than class B,
Ske AP operation stil needs a pasha nae
ral output yce bur the dhs eel sway
dest fo ero base current level for better power ef
Tess AAP operation the output signal suing. ex
Es" 180° anc 360" and is nelther ess/A ta ia
Spetion,
‘ets ELECTRONIG DEVICES Fig: Output A207 FOr COS AB pig
jentary symmet
peter
TY class AB Push-pull amplie
Fig #510) transfer Characteristics of Class AB sin
Bete albias sollage Vio is opp between the bases of
and Qe giving rset bias current lo,
eit)
OP Small V,, both tran
Fisorbon dala
Selected to yield the
‘completely eliminated. The value of Viais
Tequired quiescent current lo
amplifier
‘ils ELECTRONICDEVICES AND GGUS
‘on ELECTRONIC DEVICES AND CIRCUITS Tastee! .
Ding he ste
contort
famgoe-Vo-80e%s
Te class AB ges oe
sethecus Beat w=
Seat Vat ties conc
ratte oe of fm 00
Spat proiding he or
de of aster Since tar
eomcverdsorton wil be met
PigAMO Characteristics of class AB amplifier
Init ELECTRONIC DEVICES AND CIRCUITS:
pnmetry class AB amplifi
een a it ynp Darlington Pair Tran
etalon ord
Fe osngton BT
Oo Seon BIT
BO pre al ‘
Sie omplonentary symmry class AB amplifier sing
Pied darington ancl complementary darlington pair BIT
MELECTRONIC DEVICES AND CIRCUITS in the teansistor exceds the masinum
ae tint ofthe junction it wl be dagen
1e method of removing best,
pppe or alco)
Begpond at the collect
Foon its metal face casing int hy eee
body it radiates in the sum isp
proportional ote poser dissipated inthe mneeaee a
“mathematical
feexpre
Ty - Ten = Pe.
Tis temperature at aleeoercton
vi temperature of sureunding ai
Peis power dissipation
diode biasing Cee
Fees ces A opeation using
Figure shows a class AB Which the ae
Behe by psig co rr
dios Thigh he ce
‘Pe of contiguration,
‘onstant which has unit of thermal sesitence
This the tempemure a justion may be expressed at)
T= Tek Pex
er distortion ie ol
the character
Design of Heat sink
For a particular power transistor of a power ampliien, the
"fective foal thermal resistance between coleton unetion
ov surrounding. air of room is made
UP OF followings
companent
4 transit “1 Thee eine Beton olatorjanction ana
hen ea ‘rositorbody (cay 1.2°C/¥)
iunction of
le because
Ist rarer:
EMRONC DEES ‘AND Gh
cota Seiko HECTRONICDIVICES AND GRCGRS RSA] 4) The thermal resistance
generally sel etre th
Therefo thermal resistance, %
Season becomes
Pex (28:40)
43 Tuned Apion
TRE ampli: used for arpiying
fesqeney or rarom band of fru
amplifier. Tuned amplifiers amity
Spe Leroi antes ae ust in ces
fly at rsonance frequency. Resonant 1c
Provides igh impedance and so von
Provide high gain
CORDES
——— ay
Fig. 4.8(b)
is B= suspectance
1)
+jloe~o,
ion (2) say that at neat 2sr0 and ne
ray ecco ance is very highssAnd a5 @
infinity frequency, the admit
result output voltageis very low Meat #60
1 fram neat ze the eutpst
ant
frequency called Fo
put voltage fas down. AE
therefore ihe
When the frequenty incresce
voltage faises upto a certain
yond that, the oo
frequency and bey i
esonant frequency ts the culate
But at resonant equeney GoPs92)
coo resonant egueney 206)
I F Figssun
Feat Fequoncy of,
BAY = bandiviany
PEF nos
eS
iS
I ye (Q)
fa ce
[Pte
J Perce mathematically 25
yf resonant circuit
the measure of the sleet
selectivity or sharp
esto
~T/RC
| spenronous Tuning
for shrinking or naerowsinggthe Bandwidth
+ Synchronous tuning means same equenc) Stagger Tuning
gio amplifies providing 20 peak sine wave
20d or lth power DEY O25 V Veg ae
ie ting? [068 Chana Regn
pet ope
sn ee
~
| pte general eflency of Cass B ampli ien by
i
iency is 6283 %
i
see :
ass B push pull amplifies providing 20V peak signal
Acta ve) to 2 16 load (speaker) and power supply is
(Ses Nv. Determine the input power, output power and
ee 145 Chaira Regul
Wor 20
9) P1000) = Vee. 2 ~ 39-2 pera 9
fy
2K
pled pag (i) Po (ac)
#20V and outpatad
hatea Regutay
em 2 soy
G25 * 07
Weheve eciency of
8858 ampliog Suppose disipation of ow is equiv fo tani
80°C and ambient temp = Find. thermal
resistance.
Solution:
Tj=Tamb _ 80-50,
——— sigrom_ of AB push poll amplifier with
got Sutput SBE
2 aheot o gistontion in cass Bamplir, Paw quas-
Ire ate In Mek sry Pe mmetcy lass AB amplifier. And explain
eee cseinorie etic schi'y anes) een? is eliminated in class AB ampli
peer tae eth beg ee aitortion amp
A ton poe an ate 150 W ase) Nk, more!
see amas ost nn ge ae ge Pe coupld posh Pll ampli emplyig
idan power an Be sispated ie gmp | Rye BO ne aver circuit and ising two pop
sotve ital conlition.
si
ine efficiency of clasA amplifier is tow? Obtain the
“of the general efficiency of series fed clase A
wy
Pe plier eit
ay i general elficiency of Transformer Coupled
le the
patermine
Erase A power amplifier
2 Draw the cicuit diagram of class-A tuned
deter the ange of fequency in which a gai Ay
ts iin dBronge? 5 mai
3. Fw does cross over distortion occur in
mpl” Discuss the change in
shen them
the magnitude ofthe inp,
the Frequency i decreased. What
055 over distortion? Discuss the
terms of power dissipation
Whats mam tice
aren men oN fc bang Rl
Be PPh pul ampier is providing «
Derg 2 Pt end poner sane 20
mg, TPM Power, ouput owen
Pak
30 it
and. cir
G What are the tu,
BP they characterizeny
ed amplifiers and when
are they used? How a
prators. Multivibratore ae of
utes Mae three types
eeronning) “mulfvibaon, mone,
(oF Bip
o aqeshot) and bis mula
NAL GENERATOR AND
SIG
a We designed unin,
bipolar junction
field-effect transistors (FETS) ae, whith age
ow Because of the
avalability of vayious
pot cuits (ICs) The ICs used in mulvbmnay ae gy
4 cir
got amers (ti) lOgie gates and) monosabe nei
te alernatig center vellage Waveforms “04
ones © will be dealing with ux
of opamps,
logic gates, Aipslops in nonsinuseigal
nusoidat osiltors cr funeti
on es
fis implemented wig
chausen
Sinusoidal waveform Generators an dscillator is a device that generates aperiodic. ar onipat
signal without any form of input signal required
be realized by plac
sckecve etna inthe endback pati fan apie
2 “eaueng
th
> Provided that
‘al orsign ia.
= Arpt ar Ae
= Yoni 9)
The baste stracture of oscillator consis ofan amplifier which
forms a positive feedback where eedback energy isin phase
with the input signal) - loop & frequency eeative newark a5
shown in below:
srenepamp), The circuit wil oscilla
the total phase
ofthe loop gain at his frequency.
Brat than unity: Some of the sinusoical
how we wil dacusse are Wein bride osc
exiles, L oscil
Clapp Ox
at the frequen
ft around the foop is ze
tr any Osc Cae
401) and crystal oscillator. 4
Non-sinusoidal Waveform Generators
fst pal systems require
some kind of a
timing wavefon
eired fo
all clocked
® @ Fectangular waveform 9
Systems where sin
Benerators of recy,
tusoidal signal
fangular waveforms are etwork and the lower parallel RC \|
Ea | se Tf atthe frequency
ane 8 sync
or Yo=AafVo= Ao Vin
sin of wyatem (ay
When: def Dic. Aol (AO = lop pany
Hence when As and Vin-» 0
: a) i Frew
: “ Tere then ho pat aa
cesta a alte A
Stone J | i
Ad =e niyo a | a ge! | ecatae
Jer should be paste fedhack ic. phases Atiference “ee
between input & output signal ot fo j
buch wast began
Thus we
_S
ee
determining network
can se block dingraim of
AN Osi 40F a5 bey
say Petia cf hs coed top pag
summing uncon
Ad th ere vill ole at
“fisies those above conditions. -Barkhaun
yueney whieh
arkhausen criteria
Fig 520) Wien Brige Osillator
‘Sinusoidal wave gen
Oud ale
the frequency de
erator
ace het a
Phase shifts, This
ane Bllbar iieras wet a
ae bir introduces zero
1lBe osilato. at tes oP tg,
2RY :
(bd or ith amptade tenon
| sce!
ot evil 224 (COMEmEN lana
Sea! 0,59 Rs should Be made atte gp
a
we
ei wee in ovder to form
it contra. (ACC)
‘Comporite valves of
ee
& 0 tether, A =
Te rw,
re starts to conduct casing a fo decease & the
90% Shum will be reached atthe oulpeamplte that
ase shit osellator: (sinusoidal wave generator)
Tanase eft osilatr cons of tans api
BS emer TRO phase rifting it
aan of 5 coscadad RC secon to meade an
ical ABD eeach RC Network at some frequen
akon atari iw eat) Tis smpls cl hos
sd aqueneyeaebiiy anc con be ased oe ser ow
fequencien wat ib)
stove igure the phase shill network fs
‘the current und ii mora
The ral of
from equation (i. (7) @) we haye,
(ORI ~~ iv)
CRE Phase sit between ii, te tem co
Peration vanishes ie (ROX + x3) =
oe X¢ =Osincex 20
substituting X=
BW Me minus sig
Of Phase bet we idea,
sis 2 ime
‘nccates that the
Nn Pld by
lesen cents An the
aning
from te amplifier fr prope
ee orton OCCU "Pe scl. an
1 ~ oscillation can be sastaned smoot
ty cay,
cart
tal Oscillators —
se ond CH
seitators (Sine Wave oscillator)
ig5:3 (2) Hardy oscillator
Bis and Lis are placed scoss Cl and feedback 18 realized as in Hate
v8 Co,
rink rat iit cag a
Bin ea Cas cles nee
Pee isin tough pul Case ae
Beesege, cae tee prema Bit i ahareore & Figh Frequencies thee jurctng
abe Fe ion eee alo cng
Se fe ample appear scrotal Le sdbacy ee aaa lansistor junction capacanres The
Seer ne ee TO Lin From the gun feet pe oe nis the octal Cappo
elt we see the voltage acres en, uF hose wat ind of variation
veloped eros La. (V A bluse shift of tapi i jency of oscillation is given,
fale By the anise da ter eee shi oF aap. The req
fe By LacLan voliage divider, frie Ways cireip. a
trode oxlany aS
met
_ where, =o
“a
app oscillator: (or Gouriet Oscillator)
ae
son, Stet components R&R,
siabilize dc biasing hen ,
sito Oe The
into Cu& C,,, And the cen er a
180° out of phase si
Ride Ce are used to
