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Summary of Electrostatic Materials Devices

This document discusses key concepts in electromagnetic fields and materials, including: 1) Different classes of materials and their conductivity properties including metals, semiconductors, and insulators. 2) Boundary conditions for electromagnetic fields at material interfaces, including continuity of tangential electric and magnetic fields. 3) Methods for solving Laplace's and Poisson's equations to determine electric fields and potentials, including applying boundary conditions and uniqueness theorems. 4) Analysis of resistors using Ohm's law and capacitors using Coulomb's law or Gauss' law.

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Bill White
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51 views1 page

Summary of Electrostatic Materials Devices

This document discusses key concepts in electromagnetic fields and materials, including: 1) Different classes of materials and their conductivity properties including metals, semiconductors, and insulators. 2) Boundary conditions for electromagnetic fields at material interfaces, including continuity of tangential electric and magnetic fields. 3) Methods for solving Laplace's and Poisson's equations to determine electric fields and potentials, including applying boundary conditions and uniqueness theorems. 4) Analysis of resistors using Ohm's law and capacitors using Coulomb's law or Gauss' law.

Uploaded by

Bill White
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ELECTROSTATIC MATERIALS & DEVICES Pioneering 21st Century

Electromagnetics and Photonics

EE 3321 Electromagnetic Field Theory http://emlab.utep.edu

Classes of Materials Boundary Conditions Solving Laplace


Tangential Components:
Metals – good conductors (s >> 1). D1t D2t
1. Solve 2V=0 in each
Semiconductors – moderate or E1 D 1 E  E  homo. region.
 
1 t 2 t
E1n D D a) For 1D problems, use
tunable conduction. E1t 1t 1n 1 2
direct integration.
Insulators – poor conductors (s << 1). D2t
Normal Components: b) Otherwise, use
D2n separation of
E2t 1 E1n   2 E2 n D1n  D2 n variables.
Inside Perfect Conductors: E2n D2
E2 2. Apply BC’s at edges
No electric field may exist Refraction: of homo. regions.
E  0 within a perfect conductor.
E1  E1n  E1t D1  D1n  D1t tan 1 tan  2 3. Calculate E from V
 using V = -V.
Voltage is constant E2  E2 n  E2t D2  D2 n  D2t 1 2
V  0 throughout a conductor. 4. Calculate D from E
using D=E.
Electric field at the boundary of a Governing Equations Uniqueness Thm.: There is only one solution.
metal has no tangential component. Inhomog. Poisson Homog. Poisson Inhomog. Laplace Homog. Laplace
Dt  Et  0 Dn   En   s     V     v    V     v      V    0  2V  0
Analysis of Resistors Analysis of Capacitors S
1. Choose suitable coordinate system. Two Methods for Analysis
+ S

2. Assume V0 is potential across terminals. 1. Assume Q and calculate V0 using
Calculate V by solving 2V = 0. C
Q V0 C
3.
4. Calculate E using E = - V. V0 Coulomb’s law or Gauss’ law. -
2. Assume V0 and calculate Q using
5. Calculate I using I   s E  ds Laplace’s equation.
S
6. Calculate R using R = V0/I. Method 1 Series/Parallel Combinations
1. Choose suitable coordinate system.
S 2. Assume the plates carry charges +Q and –Q.
C1 C2
V0 + s or 
R
sS
3.
4.
Calculate E using Coulomb’s law or Gauss’ law.
Calculate V0 by integrating from plate 1 to 
-  
plate 2 using V0   E  d C3
 L Ceq
S 5. Calculate C using C = Q/V0.

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