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CHAPTER-1

Semiconductor Physics …….………………………………….……... 4-23

C
O
Answer Key …………………………………………………………………………………………………………………..12

Solution …………………………………………………………………………………………………………………...12-23

CHAPTER-2

PN Junction …………………….………………….………………………….. 24-33

N
Answer Key ………………………………………………………………………………………………………..……... 27

Solution ………………………………………………………………………………………………………………... 29-33

CHAPTER-3

T
PN Junction Diode ………………..……………………………………….36-43

Answer Key ……………………………………………………………………………………………………….………. 39

Solution …………………………………………………………………………………………………………..…….39-43

CHAPTER-4

E
Bipolar Junction Transistor ………………………………………. 45-50

Answer Key ………………………………………………………………………………………………………..………. 47

Solution ……………………………………………………………………………………………………………….. 48-50

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CHAPTER-5

Field Effect Transistor ……………………………..….………………. 52-54

Answer Key ………………………………………………………………………………………………………..………. 53

Solution ……………………………………………………………………………………………………………….. 53-54

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CHAPTER-6

MOS Capacitor ……..……….…….………………………………….……. 58-65

C
O
Answer Key ………………………………………………………………………………………………………………… 61

Solution …………………………………………………………………………………………………………………...61-65

CHAPTER-7

MOSFET ………………………………….…………….………………………….. 67-74

N
Answer Key ………………………………………………………………………………………………………..……... 70

Solution ………………………………………………………………………………………………………………... 70-74

CHAPTER-8

Special Diode …………………………………………………………………. 76-83

T
Answer Key ……………………………………………………………………………………………………….………. 79

Solution …………………………………………………………………………………………………………..……. 80-83

CHAPTER-9

Device Technology …….……….……………………………………… 84-86

E
Answer Key ………………………………………………………………………………………………………..………. 85

Solution ………………………………………………………………………………………………………………………. 86

N
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Chapter

1 Semiconductor Physics

1. The hole concentration variation in a P- 4. According continuity equation net change

type silicon semiconductor is shown in the of minority charge concentration depend
figure below at 300 k. on
A. Drift and diffusion current
B. Generation and recombination rate
C. Both A and B
D. None
5. Germanium is doped with 5 × 1022 donor
atom per cm3 at T = 300 K. The dimension
If there is no extra field is present and hole of the half device are d = 5 × 10 –3 cm, W
current density is 30 A/cm2 then calculate = 2 × 10–2 cm, L = 10–1 cm. The current
the hole mobility? Ix = 250 μA the applied voltage Vx = 100
A. 1160 cm2/V-sec mV and magnetic flux density is Bx = 5 ×
B. 580 cm /V-sec
2
10–2 tesla calculate Hall voltage and carrier
C. 460 cm2/V-sec mobility.
D. 980 cm /V-sec
2
A. –0.3125 mV, 0.3125 m2/V-s
2. An intrinsic semiconductor of is doped with B. –0.5 mV, 0.4 m2/V-s
1015 C. –2.5 mV, 0.3125 m2/V-s
[ ] acceptor / cm3, given μp = 2550
1.6 D. None of the above
cm /V–sec, μn = 4000 cm / V – sec.
2 2
6. Calculate concentration of holes in a
Calculate conductivity in S/cm assuming sample of Ge at 300 k which has a donor
doping efficiency as 80% concentration of 2 × 1014 & acceptor
A. 1.6 B. 0.32 concentration of 3 ×
C. 0.16 D. 3.2 1014 atoms/cm3. ni(Ge) = 2.5 X 1013
3. A GaAs semiconductor resistor doped with A. 6 × 1012 / cm3 B. 6 × 1013 / cm3
acceptor impurities at a concentration of C. 6 × 1011 / cm3 D. 6 × 1014 / cm3
NA = 1017 / cm3. The cross-sectional area 7. Mobility of electron in a semiconductor
is 85 μm , the current in resistor is to be I
2
material is at 300 k is 1200 cm2/v-sec then
= 20mA with 10V applied. The length of the mobility at 400 k will be approximately
the device is________ (in μm) when μp = _____________ cm2/v-sec.
210 cm2/V-sec.

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8. At temperature T = 300 K, an n-type Find the minimum conductivity and the

silicon sample contains donor corresponding doping level to get the
concentration, ND = 1014 cm–3 and intrinsic minimum conductivity in case of p type

carrier concentration ni = 1.5 × 1010 cm–3. semiconductor.

Assume minority carrier lifetime of holes is A. 5.47  10−14 /m and 5.67  1012 /cm3

= 10 μs. Then lifetime of majority carrier B. 5.47  10−14 /m and 5.67  1013 /cm3
electrons is _________sec. C. 5.47  10−13 /m and 5.67  1012 /cm3
9. The effective mass of electron and hole are
D. 5.47  10−13 /m and 5.67  1013 /cm3
me = 0.6m and mh = 0.4m respectively.
13. A specimen of Si has resistivity of 300kΩ –
Then determine the position of intrinsic
cm, magnetic flux B = 0.1 wb/m2& d = w
Fermi level in the germanium with respect
= 6 mm
to E mid gap at 300K.
The measured hall voltage& currents are
A. 7.86 × 10–3 ev above mid gap 60mV & 10μA
B. 7.86 × 10–3 ev below mid gap What is μp? ________ cm2/v–sec
C. 4 ev above mid gap 14. Three scattering mechanisms exists in a
D. 4 ev below mid gap semiconductor , if only the first mechanism
10. Following data is given for a copper ρ = was present ,the mobility would be 400
1.73 × 10–8 Ω/m, Average time of collision cm2/V-sec, if only second mechanism was
of electron = 2.42 × 10–14 sec. Find the present ,the mobility would be 600 cm 2/V-

valence electron per unit volume and sec, and if only third mechanism was

mobility of electron. present , the mobility would be 1200

cm2/V-sec, then the net mobility in cm 2/V-
A. 0.849 × 1029/m3, 4.25 × 10–3 m2/V-s
sec ________
B. 2 × 1029/m3, 5 × 10–3 m2/V-s
A. 600 B. 1200
C. 0.849 × 1029/m3, 5 × 10–2 m2/V-s
C. 200 D. 300
D. None of the above
15. The Fermi level of a semiconductor is
11. A conductor material has free electron
0.35eV above the valence band edge. The
density of 10 /cm . When a voltage is
24 3
probability of non-occupation of an energy
applied a constant drift velocity of 1.5 × state at a level kT below the top of valence
10 -2
m/s is gained by the electrons. If the band at 400K is
cross-sectional area of material is 1 A. 1.45*10–6 B. 1.45*10–5
cm2 then find the magnitude of the C. 0.5 D. 1.45*10–4
current. 16. Estimate temperature at which PN junction
12. A semiconductor has the following made up of a semiconductor loses its

parameters: rectifying characteristics. Assume all

μn = 7500 cm2 v/sec parameters are independent of

temperature. Given effective densities of
ni = 3.6 × 1012/cm3
energy states
μp = 30 cm2 v/sec

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NC = NV = 2.5  1019 / cm3 ,EG = 0.66eV,

ND = NA = 11015 / cm3 ,ni = 1  1010 / cm3
C.
A. 387K B. 370`C
C. 405K D. 378K
17. A semiconductor crystal 12mm long 5mm
thick has a magnetic density of
0.5Wb/m2 applied perpendicular to largest
D.
faces. When a current of 20mA flows
length wise through the specimen, the
voltage measured across thickness is 37μ
V. Given carrier concentration is 1.69 ×
19. The following data is given for a conductor.
1024 m–3 assume single carrier system with
Fermi energy is 5.5 eV and mobility of the
length > thickness > width. Calculate
electron = 7.04 × 10–3 m2/V-sec The
applied current density in A/m2
Relaxation time &velocity of electrons are-
A. 333.33 B. 1666.67
----.
C. 4000 D. 400
A. 4.004 × 10–14 sec, 1.39 × 106 m/s
18. Hole concentration variation is as shown in
figure for a semiconductor, which of the B. 4.004 × 10–14 sec, 4 × 106 m/s

following graph matches for diffusion hole C. 3 × 10–12 sec, 4 × 106 m/s

current density? (let P(0)/w =P1) D. 3 × 1012 sec, 1.5 × 106 m/s
20. In a P type semiconductor the fermi-level
lies 0.4 eV above the valence band. If the
concentration d acceptor atoms are tripled.
Find the new position of Fermi-level.
(Assume kT = 0.03 eV)
A. 0.0329 eV above the valence band
B. 0.3671 eV below Fermi level
A.
C. 0.3671 eV above valence band
D. 0.0329 eV above Fermi level
21. In a P+N junction,

ND = 1016 / cm3 ,ni = 1010 / cm3 ,

with
r = 12,Dp = 16m2 / Sec, p = 50nSec
B.
forward voltage of 0.5 V. Calculate the hole
currents density 1.6 um away from the
junction of P side in A/cm2?

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22. For the doping profile shown for n-type 25. An intrinsic semiconductor material having
semiconductor. Calculate contact potential ni = 1010 cm–3 doped with As with doping

under thermal equilibrium. concentration of 10 16 cm–3 acquires a

Condition certain Fermi level, then the resultant

(assume T = 300 K, ni = 1010 / cm3) material is again doped with boron with
doping concentration of 1018 cm–3 then the
distance between the intrinsic Fermi level
to new Fermi level will be_______ v.
26. A uniformly doped silicon bar of length L =
1 μm is illuminated at x = 0 such that
electron and hole pairs are generated at
the rate of,

 x
GL = GLo 1 −  , 0  x  L
 L

Where GLo = 1016 cm–3 s–1

The hole density at x = 0.75 μm of
A. 0.1 V B. 0.2 V
semiconductor is found that 1010 cm–3,
C. 0.4 V D. 0.3 V
then the time required (in μs) for hole
23. How much donor impurity should be added
before it recombines with electron at the
to pure germanium so that is resistivity
distance x = 0.75 μm of semiconductor bar
drops to 10% of its original value: is______
For Ge ni = 2.5 × 10 /cm , μn = 3800
13 3
27. In a sample of intrinsic semiconductor, If it
cm /V-s, μp = 1800 cm /V-s
2 2
has 20Ω at 364 k and 200Ω at 333k, and
A. 3.68 × 1014/cm3 B. 5 × 1012/cm3 this change in resistance is caused entirely
C. 6 × 1013 /cm3 D. 6 × 1014/cm3 by ni. find the Energy bandgap Eg0 (in eV).
24. Which of the following is/are correct? (Assume, k = 8.67 × 10–5 eV K–1)

(MSQ) 28. In a semiconductor sample if donor

A. Drift current is because of potential concentration is 10 /cm and

14 3
acceptor

gradient concentration is 1013 /cm3 then difference

between the fermi level and intrinsic fermi
B. Diffusion current is due to concentration
level (EF – EFi) is ____ eV.
gradient
(Assume ni = 1.5 × 1012 / cm3, T = 300°k)
C. thermo electric current is due
29. The no of free carrier ni in a semiconductor
temperature gradient
material follows the Mathematical
D. Drift current is because of electric field
expression
gradient
ni = N(1 / p)−E/kT
where N = atomic concentration

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P = The probability that an atom is hit by a 32. The magnitude of hall voltage VH with the
particle following parameters will be

E = Band strength at temperature T kelvin

K = Boltzmann constant
T = Temperature in K

Doping concentration of the material = 1.5

× 106 / cm3
BZ = 0.4 wb/m2
H = 3 mm, w = 2 mm
Mobility of charge carriers of the material
= 0.38 m2/V-sec electric field generated
Which of the following is correct? due to current Ix will be 600 v/m
(MSQ) A. 145 mv B. 273 mv
A. A is Ge B. B is Si C. 547 mv D. 136 mv

C. C is Ga As D. A is Si 33. For the intrinsic semiconductor with energy

30. A semiconductor sample having 5.8 × gap of 0.72 eV. Determine the position of
fermi level if mh = 5 me
1028 conduction electrons/m3 and Fermi
A. 0.5 eV B. 0.45 eV
energy = 5.5 ev and the mobility of the
C. 0.39 eV D. 0.6 eV
Electron in that sample is 7.04 × 10 –
d
34. For pure germanium semiconductor =
3
m /v-sec.
2
dT
i) Relaxation time = 4 × 10–14 sec ___________ % of s (where s is

ii) Resistivity = 15.31 × 10–8 Ω–m conductivity and T is temperature in

iii) Velocity of electron with Fermi energy = Kelvin).

35. A silicon diode, with NA=1017 cm-3 and ND =
1.39 × 106 m/sec
5 × 1017 cm-3 , is forward biased with V a =
Which of the above values are correct?
0.05 V. Assume that the intrinsic
A. i) only B. ii) and iii)
concentration of silicon is ni = 1.08
C. i) and iii) D. i), ii), iii) ×1010 cm-3. What are the minority carrier
31. If a semiconductor has electron mobility = concentrations ∆np(xp) and ∆ pn(xn) at the
1000 cm / V-sec, hole mobility = 600
2
edge of transition region?
cm2 / V-sec and intrinsic conductivity is 10 – A. 2.6 × 1011 cm-3, 5.1× 1010 cm-3

/Ω – cm find the minimum conductivity

6 B. 5.1× 1010 cm-3 , 2.6 × 10-11 cm-3,
C. 2.3 × 1012 cm-3, 4.1× 109 cm-3
will be ________ × 10–7/Ω–cm
D. 1.6 × 1011 cm-3, 3.7× 1010 cm-3

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36. An n-type silicon sample has a donor A. ‘X’ is N-type material

density ND = 1021 cm–3, is placed in a hall B. ‘X’ is p-type material
experiment under the magnetic field of 0.2 C. ‘X’ is intrinsic type semiconductor
Wb/cm2, it is found that the magnitude of D. None of the above
hall voltage is 1.5 mV. Then the current MSQs:
density inside the sample while it is 41. In a semiconductor it is observed that the
undergoing hall effect is ______A/cm2. electron and hole drift current densities are
(Assume, thickness of the sample is 2 mm equal. The intrinsic carrier concentration n i
and change of electron is 1.6 × 10–19 C) = 1.5 × 1010/cm3. The hole mobility (μp) =
37. The probability that an energy state is 480 cm2/V-s & the electron mobility (μn) =
filled at Ec +KT is equal to the probability 1300 cm2/V-s
that a state is empty at Ec + KT, then Then
position of Fermi level is A. The hole concentration (P) = 2.46 ×
A. Ec + 2 KT B. Ec – 2 KT 1010/cm3
C. Ec + KT D. Ec – KT B. The electron concentration (n) = 9.1 ×
38. In P-Type semiconductor excess carrier is 109/cm3
10–10 cm–3 & mean lift time Τ = 1 n sec. C. Hole drift current density (Jp) = 3.78 ×
Find recombination current. 10–3/cm2 at E = 2 × 103 V/cm.
A. 1.6 × 10–20 A B. 2 × 1010 A D. Electron drift current density (Jn) = 3.78
C. 3 × 10–3 A D. 4 × 10–5 A × 10–3 A/cm2 at E = 2 × 103 V/cm.
39. The corresponding doping concentration to 42. Which of the following is/are correct?
get the minimum conductivity in case of A. single element semiconductors exhibit
lightly p-type semiconductor, where only positive mobility for carriers.
intrinsic carrier concentration, ղi = 2.4 × B. Compound Semiconductors exhibit only
1010 cm–3 is _______ × 1010 cm–3. positive mobility for carriers
   C. Single element semiconductors can
 Assume n = 4 
 p  exhibit negative mobility for carriers
 
40. In a Si-semiconductor material doped with D. Compound Semiconductors can exhibit

X-type material. The energy band diagram negative mobility for carriers

of that semiconductor material is a follows 43. Which of the following is/are correct
A. Under Equilibrium condition, the intrinsic
semiconductor follows the relation
n o po = ni2
B. Under Non-equilibrium condition, the
intrinsic semiconductor follows the relation
n o po = ni2
Which of the following correct?

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C. Under equilibrium condition, the The above curves are satisfying fermi -
Extrinsic semiconductor follows the relation dirac function. Which of the following is/are
n o po = ni 2
correct?
D. Under non-equilibrium condition the A. T1, T2 & T3 are equal
extrinsic semiconductor follows the relation B. T1 is less than T2
n o po = ni2 C. T4 is less than T3
44. For Electron Hole pair generation in Si D. T4 is equal to 0 k
Which of the following particle/s can 47. Which of the following is/are correct?
Triggered the process A. The Fermi energy level is at which half
A. Photons B. Phonons of the available states are occupied at T >
C. Electrons D. Holes 0k
45. The physical significance of Ef(fermi energy B. f(E, T) = 0 at E > EF & T = 0 k
level) C. f(E, T) = 0 at E < EF & at T = 0 t
A. The energy level below which all allowed D. f(E, T) = 1 at E < EF & at T = 0 k
levels are occupied at T = 0 K 48. The characteristics of semi conduction
B. The energy level above which all devices are more sensitive to_________
allowed levels are not occupied at T = 0 k A. Temperature
C. The energy level below which all allowed B. Illumination
level are not occupied at T = 0 k C. Doping
D. The energy level above which all D. Charge of the carrier
allowed levels are occupied at T = 0 k 49. A bar of Indium phosphate is doped with
46. Consider the following figure Ge such that the Germanium atoms occupy
Indium and phosphorus sites in InP
Crystal. Which of the following is/are
correct?
A. Ge atoms act as P-type dopants in
phosphate sites.
B. Ge atoms act as n-type dopants in
Indium sites
C. Si act as neutral type i.e., not P type or
n-type for any element
D. Both B & C are correct

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ANSWER

1.B 2. C 3.(14.2) 4.C 5. A 6. A 7.(780) 8.(444.4) 9.B 10.A

11.(0.24) 12. B 13.(1200) 14. C 15.B 16. C 17. C 18. C 19. A 20.C

21.(0.053) 22. D 23. A 24.A,B,C 25.(0.1197) 26.(3.6) 27.(1.47) 28.(0.1064) 29.A,B,C 30.C

31..(9.68) 32. B 33. C 34.(5.5) 35. A 36.(6) 37. C 38. A 39.(3.6) 40.A

41.A,B,C,D 42.A,D 43.A,C 44.A,B,C 45.A,B 46.B,C,D 47.A,B,D 48.A,B,C 49.A,B

SOLUTION

1. (B) σ ≃ NA qμp
dp = 1017 × 1.6 × 10–19 × 210
Jp = −qDp
dx = 3.36 (Ω cm)–1
16 15
10 − 5  10 L
30 = −1.6  10−19  Dp  R = ,
(3 − 7)  10−4 A

−1.6  10−19  5  1015  Dp L = RσA

30 =
−4  10−4 = 0.5 × 103 ×3.36 × 85 × 10–8
∴ Dp = 15 cm2/sec = 14.2 μm
Now we know that 4. (C)

Dp The continuity equation of p type SC

= VT
p dp −1  dJp(x) 
= + Gp − Rp
dt q  dx 
Dp
 p =
VT So, Jp(x) = drift current density +diffusion
density so A. part is true
15
=
0.0259 Again
∴ µp = 580 cm2/V-sec GP = Generation Rate
RP = Recombination rate
2. (C) So, B. part is true

0.8  1015 ∵ Ans is (C)

Efficiency = p = 0.8 × NA =
1.6 5. (A)
0.8  1015 We know that
σp = pqμp =  1.6  10−19  2000
1.6 −IxBx
VH =
σp = 0.16 S/cm ned

3. Ans. −(250  10−6 )(5  10−2 )

VH =
V 10 (5  1021 )(1.6  10−19 )(5  10−5 )
R= = = 0.5KΩ
I 20 VH = – 0.3125 mV

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We know that −
3
1200  300  2
* = 
IxL 2  400 
n =
enVx Wd
(250  10−6 )(10−3 ) * On solving above equation, we get μ2 =
= −19
(1.6  10 )(5  1021 )0.1  2  10−4  5  10−5 780 cm2/v-sec
= 0.3125m2 / V − s
8. Ans.
6. (A)
Majority carrier lifetime in terms of
As semiconductor is electrically neutral
Net negative charge = net positive charge minority carrier lifetime in n-type

n + NA = p + ND --------(1) semiconductor is given by

from mass action low, np = ni2 N 

2

no =  D  po
n2  ni 
n = i ---------(2)
P 2
 1014 
From (1) & (2) *  10 
 10  10−6 = 444.4 sec
 1.5  10 
P2 – (NA – ND) P – ni2 = D
9. (B)
(NA − ND )  (NA − ND )2 + 4ni2
P=
2 EC + Ev 3 m
EF = + kT ln( h )
2 4 me
Putting given values as ni = 2.5 × 1013 /
cm3 EC + EV 3  0.4m 
EF = +  0.026 ln  
NA = 3 × 10 14
/ cm 3 2 4  0.6m 
ND = 2 × 1014 / cm3 EC + Ev
EF − = −7.86  10−3
P = 5.9 × 1012 / cm3 ≈ 6 × 1012 / cm3 2
7. Ans. 780 cm2/v-sec ⇒ Minus sign represent Fermi level is 7.86
Mobility of electron in semiconductor varies × 10–3 eV below mid gap.
with temperature. When the operating
10. (A)
temperature is above 273K then the
We know that
mobility is following the relation.
m
−
3 n=
* Mobility (μ) α T 2 e2 

Hence we can substitute the values as 9.1  10−31

n= −19 2
−
3 (1.6  10 )  (2.42  10−14 sec)(1.73  10−8 ))
1  T1  2
* =
2  T2 
n = 0.849 × 1029/m3
* Where μ1 = 1200 cm /v-sec 2

e
* T1 = 300k =
m
* T2 = 400k
1.6  10−19  2.42  10−14
Putting the above values in eq 2 we can =
9.1  10−31
find the value of μ2
µ = 4.25 × 10–3 m2/V-S

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11. Ans. 15. (B)
Given that Probability of existence of electron at
n = 10 /cm , A = 1 cm , vd = 1.5 × 10
24 3 2 –
allowed energy level is given by,
2
m/s 1
f(E) = (E −EF )/kT
we know that 1+ e
I = ne Vd A 1
1 − f(E) = 1 − (E−EF )/kT
I = 1024 × 1.6 × 10–19 × 1.5 × 10–2 × 10–4 1+e

I = 0.24 A kT = 8.62*10–5*400 = 0.0345eV

12. (B)

min = 2ni np = 5.47  10−14 /m

NA corresponding to minimum conductivity

  p 
NA = ni  n − 
 p n 

=3.6×1012 [15.8114 – 0.0632]
⇒ NA = 5.67 × 1013/cm3 1
1 − f(E) = 1 − = 1.45  10−5
13. Ans. 1 + e−(0.35+0.0345)/0.0345

p = RH 16. (C)

1 Losing rectifying action ⇒ becomes intrinsic

= cm = 3.33  10−4 /m
300k n = p = ni
VHW ⇒ ND = NA = ni
RH =
Bl
N N 
−3 −3 EG = kTIn  C 2 V   ni = NCNV e−EG /2kT
60  10  6  10
= = 360m3 / A − sec  ni 
0.1  10  10−6
T
−0.66[2( )]
∵ μp = 3.33 × 10–4 × 360 1  1015 = (205  1019 )2 e 11600

= 0.1198 m2/v–sec T = 378K

≈ 0.12m /v–sec
2
17. (C)
μp ≃ 1200 cm2/v-sec
14. (C)
1 1 1 1
= + +
 1 2 3

1 1 1
= + +
400 600 1200

1 1 1 1  1 12 
= + + =

200  2 3 6  200 12 
Given that
1 1
= L X = 12mm, dy = 5mm,
 200
P = 1.69  1024 m−3 ,B2 = 0.5Wb / m2
2
 = 200cm / V − sec
IX = 20mA, VH = 37V

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1 1 VW 20. (C)
RH = = = H Z
 pq B2IX NA = Nve–(EF– Ev)/kT
BZlX NA1 = Nv e
−(EF −Ev )/kT
1
NA2 = Nv e−(EF2 −Ev )/kT
= WZ = 1mm
pqVH
NA2 −(Er −EF )/kT
I 20  10−3 =e 2 1
AsNA2 = 3NA1
JX = X = = 4000A / m2 NA1
A 10−3  5  10−3
−EF2 + EF1
18. (C) ln3 =
kT
For diffusion hole current density
EF1 – EF2 = 0.0329
dp
* Jp = -q Dp (EF1 + Ev) – EF2 – EV = 0.0329
dx
0.4 – (EF2 + EV) = 0.0329
w
* Hence for x < EF2 + EV = 0.3671
2
21. Ans.
p (o) p (o)
− p (o) For P+N junction currents is approximately
dp 4 2
* = = = P1
dx w w due to holes I ≈ IPn(x)
w−
2
AqDP
w IPn (x) = P(0)e− x/LP
* Similarly for Lq
2
A qDP
p (o) p (o) IPn (x) = Pn0 (eV /VT − 1)e− x /LP
− p (o) LP
dp 4 2 p1
* = = =
dx w 2w 2 ni2 1020
w− Pn0 = = = 105 /cm3
2 N0 1015
* For x > w
LP = DP TP = 16  50  10−19 = 8.944  10−4 cm
* It is a constant value hence slope will be
zero
IPn (x) 1.6  10−15  16
=  105
* On matching the above result option “C” A 0.944  10 −4

1.610−4
will be correct −
 (e0.5/0.025 − 1)  e 8.54410−4

19. (A)
IPn (x)
= 0.053A / cm2
we know that A
m 22. (D)
=
e
q ϕ (x) = EF – Ei (x)
−3 −31
7.04  10  9.1  10 qϕ (0) = EF – Ei (0)
=
1.6  10−19
 N (0) 
τ = 4.00 × 10–14 sec. q(0) = KT ln  D  &
 ni 
1
EF = K.E = mV2  N (5m) 
2 q(x = 5m) = KT ln  D 
 ni 
1.6 × 10–19 × 5.5 = ½ × 9.1 × 10–31 × v2
∴ V0 = ϕ(0) – ϕ(x = 5 μm)
V = 1.39 × 106 m/s

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KT  ND (0)   1016 
= ln   * Efn – Efi = KT ln  10 
q  ND (5m)   10 
 1019  * Efn – Efi = KT ln (106)
= 0.026 ln  14 
 10  * Where KT = 0.026 v at 300 k
∴ V0 ≈ 0.3V * Efn – Efi = 0.026 x 13.815
23. (A) * Efn – Efi = 0.3592 v
1 1 Whereas boron is ‘P’ type impurity atom
= = q
 ni [n + p ]
which will create Fermi level below the
1 intrinsic Fermi level.
= 13
2.5  10 [3800 + 1800]1.6  10−19
= 44.6 − cm
10
1 = 10%. =  44.6
100

1
= 4.46
NDqn

1  Na 
ND = −19 Which is given by Efi - Efp = KT ln  
1.6  10  3800  4.46  ni 
ND = 3.68 × 1014/cm3
 1018 
* Efi - Efp = KT ln  10 
24. Ans. A, B, C are correct  10 
Diffusion current is due to difference in
* Efi - Efp = 0.4789 V
concentration of device.
On doping the material with arsenic the
Thermo electric current is due to variation
pentavalent impurities are added which
in temperature in a device
have free electrons. On further doping the
Drift current (Jdrift = σ E), because of
material with boron the trivalent impurities
electric field which is a result of voltage
are added in the material which have holes
gradient
as a majority carriers these holes
25. Ans.
neutralizes the free electrons created by
Arsenic is the ‘N’ type impurity atom hence
arsenic and makes the material P type as
it will create Fermi level above the intrinsic
its doping concentration is higher.
Fermi level.
Hence the Fermi level of the material will
shift downwards.

 Nd 
Which is given by Efn – Efi = KT ln  
 ni 

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To get the distance of Fermi level with 3 −Ego
ni = AT 2 2KT

intrinsic Fermi level the 1st result is

1

subtracted from second result.  R  ni

i.e. Efi – Ef = 0.4789 – 0.3592 V 1

Efi – Ef = 0.1197 V  R  ni

26. Ans. R1 ni2 T 3/2

−Ego  1
 −
1 

2  KT2 KT1 
= = 23/2 e
We know that net hole density varying R2 n1 T1
along ‘x’ is 3/2 −Ego  1 1 
20  333   −
2 KT2 KT1 

Pn(x) = Pno + GL τp  = e
200  364 
(Where Pno is equilibrium hole
By taking ln on both sides, we get,
concentration)
Ego
But, 2.95 = 2.17
2 
 x Ego = 1.47 eV
GL = GLo 1 − 
 L
28. Ans.
 x n 
Pn(x) = Pno + GLo τp 1 − 
 L  EF − EFi = KT ln  0 
 ni 
At a distance of x = 0.75 μm of silicon bar,
Where no is effective donar concentration
the hole density
2
Nd − Na  N − Na  2
3L  x n0 = +  d  + ni
Po(x) |x = = Pno + GLo τp 1 −  , 2  2 
4  L
2
Given, 1014 − 1013  1014 − 1013  12 2
= +   + (1.5  10 )
3L 2  2 
Po(x) |x = = 1010 cm–3
4
= 4.5  1013 + (4.5  1013 )2 + (1.5  1012 )2
Pno = 10 cm 9 –3

3 = 4.5  1013 + 1012 (45)2 + (1.5)2

10 9  16
10 = 10 + p 10 1 − 
 4 = 4.5 × 1013 + 4.502 × 1013
On solving the above eq we get ∴ no = 9.002 × 1013/cm3
τp = 3.6 μs  9.002  1013 
 EF − EFi = 0.026 ln  12 
27. Ans.  1.5  10 
Given resistance, R1 = 20Ω at T1 = 364k ∴ EF – EFi = 0.1064 eV
R2 = 200Ω at T2 = 333k 29. Ans. A, B, C are correct
L Sol.: Given that
But, R =
A −E/kT
1
1 ni = N  
But, resistivity  = P 
niq n + p 

Where ni is intrinsic carrier concentration E 1

log10 ni = log N − log  
kT p
given by

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 P  1 32. (B)
E  1  
log10 ni   −  log   1  1  BZlXR H
kT  p VH =
 p  w
+ ve
lx
If energy gap is more the slope is more Now = J = Ex
A
|Slope of C| > |>|Slope of B|>|Slope of A| So, Ix = J.A
EgC > EgB > EgA = σ. Ex. A

Energy gap of Germanium is less & Energy = n.q.μn. Ex. A = n.q. μn . Ex. W.H
(Assuming n – type material)
gap of GaAs is more A, B & C are correct
∴ Ix = 1.5 × 106 × 1.6 × 10–19 × 0.38 ×
30. (C)
104 × 600 × 10–2 × 0.2 × 0.3
Relaxation time
∴ Ix = 3.2832 × 10–10 A
m 1
= = 4  10−14 sec Now RH =
q charge  carrier conc
Resistivity = 1
=
1 1 1.6  10−19  1.5  106
= = = 1.531  10−8  − m
 nq RH = 4.166 × 1012 cm3/c
BZlXR H
1 VH =
Velocity  KE = mv2 = EF w
2
0.4  10−4  3.2832  10−10  4.166  1012
2EF so v =
V= = 1.39  106 m/ sec 0.2
m V = 27.36 × 10 V
–2

31. Ans. 9.68 V = 273.6 × 10–3 V

∴ V = 273.6 mV
min = 2nq
i np
33. (C)
This is the expression for minimum we know that
conductivity EC + Ev Eg 0.72
= = = 0.36eV
2niq np 2 2 2
min
 = E + EV 3 m 
i niqn + nqp EF + C = KT ln  h 
2 4  me 
min 2 np
 = 3
i n + p EF = 0.36 + 0.026 ln(5)
4
2i np EF = 0.39 eV
 min =
n + p 34. Ans.
Given μn = 1000 cm2/ v – sec, μp = 600  = ni (n + p )q

cm2 / v – sec & ni = 10–6 / Ω – cm −

EG
0
3/2
= A0  T e 2KT
 (n + P )  
2  10−6  1000  600
min = EG0
1000 + 600 3
n  = n A0 + nT − + n(n + p ) + n 
2 2 KT
= 9.68 x 10–7/Ω–cm
Now differentiating w.r.t. ‘T’

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(we consider for 1°C change, mobility Therefore, the minority carrier
remains constant). concentration ∆ pn(xn) at the edge of

1 d 3 EG0 transition region is :

= +
 dT 2T 2KT 2 ∆ pn(xn) = pn0 [exp(Va/VT) -1]

We take T = 300K, EG0 = 0.285 eV  0.05 

= (2.33 × 102) [exp   -1]
1 d 3 0.795  0.026 
 = +
 dT 2  3000 2  0.026  300 = 5.1× 1010 cm-3
d Similarly, in p-side, the hole (majority)
= 0.055 
dT concentration is
d pp0 = NA = 1017 cm-3
= 5.5% of 
dT So, the electron (minority) concentration in
35. (A) p-side is
The electric field and potential are obtained
(1.08  10 )
2
10

np0 = ni / pp0 =
2
= 1.17 ×
by using the full depletion approximation. 1017
Assuming that the quasi-Fermi energies 103 cm-3
are constant throughout the depletion Therefore, the minority carrier
region, one obtains the minority carrier concentration ∆ pn(xn) at the edge of
densities at the edges of the depletion transition region is :
region, yielding. ∆ np(xp) = np0 [exp(Va/VT) -1]

minority carrier concentration ∆ pn(xn) in  0.05 

= (1.17 × 103) [exp   -1]
the N-side at the edge of the transition  0.026 

region is given by ∆ pn(xn) = = 2.6 × 1011 cm-3

36. Ans.
pn0 [exp(Va/VT) -1]
We know that, hall voltage (magnitude)
minority carrier concentration ∆ pn(xn) in
BI
P-side at the edge of transition region is VH =
W
given by ∆ np(xp) = np0 [exp(Va/VT) -1].
BI
These equations can be verified to yield VH = , where area = W × d
W
the thermal-equilibrium carrier density for
BI B I
VH = =  d
zero applied voltage. A  A

In n-side, the electron (majority) d

concentration is Where current density,

nn0 = ND = 5 × 1017 cm-3 I

J=
A
So, the hole (minority) concentration in n-
B
side is  VH =  J d

(1.08  10 )
2
10
but ρ = nq = ND q
pn0 = ni / nn0 =
2
17
= 2.33 ×
5  10 VH ND q 1.5  10−3  1021  1.6  10−19
 J= =
102 cm-3 Bd 0.2  2  10−1
= 6A/cm2

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37. (C) 40. (A)
The probability that an energy state is Sol.: For N-type semiconductor materials
filled at Ec + KT is given by
fermi level is near to conduction band
1
f (EC + KT ) = ... (i) 41.Ans. A,B,C,& D are correct.
1+e
( C + KT − EF )
E
KT Sol.: Given Jn = Jp
The probability that a state is empty at nq μn E = pq μpt
Ec + KT is given by
n n = Pp
1
1 − f (EC + KT ) = 1 − ... (ii)
1 + e(
EC +KT −EF ) /KT
n P
=
Given that the two probability are equal p n
be, i.e.,
f(Ec + KT) = 1 – f(Ec + KT) p ni2  p 
n=P =  
1 1 n n  n 
⇒ =1−
1 + e(Ec +KT −Ef )/KT 1 + e(Ec +KT −Ef )/KT
p
⇒ 1 = 1 + e(Ec + KT – EF)/KT – 1 n = ni
n
⇒ ln(1) = Ec + KT – EF
⇒ EF = Ec + KT n = (1.5 × 1010) (0.607) = 9.1 × 109/cm3
38. Ans. A.
n
Recombination current P = ni
p
excess carrier  q 10−10  1.6  10−19
= = P = (1.5 × 1010) (1.64) = 2.46 × 1010
n 10−9
I = 1.6 × 10–20 A At E = 2 kV/cm

39. Ans. Jn = nq μn E = (9.1 × 109) (1.6 × 10–19)

We know that electrical neutrality (1300) 2 × 103 = 3.78 × 10–3 A/cm2
condition, ND +p = NA + n
It is known that hole current density is
For lightly doped p-type semiconductor
equal to electron current density.
ND = 0
∴ p = NA + n Jp = 3.78  10−3
NA = p – n
42. Ans. A & D are correct
n2
=p− i
p

n ni2
= ni −
p n
ni
p
1/2 1/2
   p 
NA = ni  n  −  
 
 p  n 
• At high electric fields compound
 1
= 2.4  1010  4 −  Semiconductors can exhibit negative
 4 

mobility for carriers
= 3.6 × 1010 cm–3

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43. Ans. A & C are correct So T4 = 0 k.
Sol.: Under equilibrium condition Both Case: (E > EF)
intrinsic and extrinsic material follows  
 1 
relation
f(E, T) =  
n o po = n i2   E − EF  
1 + exp  kT  
no = electrons concentration at equilibrium   

Po = holes concentration at equilibrium If ‘T’ increases, f (E1 T) also increase

ni = intrinsic carrier concentration This trend can be observed

44. Ans. A, B, C are correct If We take T3  T2  T1

Sol.: During thermal agitation, the atoms .’ . T3 > T2 > T1 > T4 is correct
in a semiconductor material moves like a B, C, D are satisfying these conditions
Travelling wave which further causes EM 47. Ans. A, B, D are correct
wave Sol.:
These two waves are constituting of 1
f(E, T) =
phonons and photons. These two can  E − EF 
1 + exp  
Trigger the E-H-Pair generation process  kT 
Sometimes the generated high energetic If E > EF & T = 0 k
electron also can cause the electron-Hole 1
f(E1T) = =0
pair generation. 1 + exp(+)
45. Ans. A & B If E < EF & T = 0 k
Sol.: The energy level above (below) 1
f(E1T) = =1
Which all allowed levels are not occupied 1 + exp(−)
(occupied) is called Fermi Energy level 48. Ans. A, B & C are correct
46. Ans. B,C,&D are correct. Sol.: the characteristic of semiconductor
  devices is more sensitive to temperature
 
1 illumination and doping not because of
Sol.: f(E, T) =  
  E − EF   charge of the carrier.
1 + exp  
  kT   49. Ans. A, B
If E  EF (T = 0)  f(E, T) = 0 Sol.

1 For InP,
If E  EF (T = 0)  f(t1T) = =1
1 + e− Ge act as P-type for ‘p’ atoms

T4 is satisfying above condition & ‘Ge’ act as n-type for ‘n’ atoms



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Chapter

2 PNB Junction

1. For open circuited diode which of the current is I = 26 mA . Given that mean
following is valid? lifetime of hole τh = 20μs at 300K?
A. 20 Μf B. 200 μF
C. 0.2 μF D. 0.02 μF
5. For an abrupt junction varactor diode the
dependence of the device capacitance (c)
an applied reverse bias (v) is given by
 N 
A. W = Xp0 1 + A  A. C ∝ v1/3 B. C ∝ v–1/3
 ND 
C. C ∝ v1/2 D. C ∝ v–1/2
 N  6. If Xp and Xn denotes the extent of the
B. W = Xp0 1 + D 
 NA 
penetration of depletion region of a P – N
 N  junction on the P and N sides the
C. W = Xn0 1 + A 
 ND  A. Xp.Xn = NANP B. Xp.NA = Xn.ND
 N  NA  NP
D. W = Xp0 1 + −D1  C. Xp.ND = Xn.NA D. Xp  Xn =
 NA  Ni

2. For a PN junction diode, width of space 7. A junction diode is fabricated in which the
charge region increases as? p and n regions are doped equally with 5 ×
A. Forward bias voltage increases 1016 atoms/cm3. Assume n i= 1.5 ×
B. Reverse bias voltage increases 10 /cm . If the cross-sectional area of the
10 3

C. Forward bias voltage reduces junction is 20 μm2, the magnitude of the

D. Reverse bias voltage reduces charge stored on either side of the junction
3. For a p+n abrupt Junction diode, the while no external bias being applied would
doping Concentration in the n-region is 2 × be – (Assume ϵS = 1.04 x 10-
1015/cm3. If the critical field at Avalanche 14
F/cm, V0 (barrier potential)=0.78V )
Breakdown is 2 × 105 v/cm, then the A. 1.61 x 10-19 C B. 1.13 x 10-15 C
breakdown village will be approximately C. 1.13 x 10-19 C D. 1.61 x 10-15 C
A. 65 V B. 68 V 8. The diffusion capacitance in a certain diode
C. 62 V D. 70 V is found to be 0.5 μF at 3.4 v forward bias
4. What is the diffusion capacitance due to voltage then the diffusion capacitance at
holes in a Ge diode when forward biased the 3.5 v forward bias voltage will
be________ μF.

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9. A 10V reference is used in the circuit.

A.

B.
Zener diode of 400nw & 5V with knee

current 10mA is used. To satisfies circuit

condition shown in figure the value of Rs is

__________.
C.
A. 50Ω B. 500Ω

C. 50kΩ D. 5kΩ

10. The built in potential of an abrupt p-n

junction is 0.75 V. If its junction

D.
capacitance (Cj) at reverse bias of 0.25 V

is 5 PF, then the value of Cj (in PF) when

reverse bias of 8.25 applied is ______

13. Consider a silicon a pn junction at T = 300
11. A silicon pn-junction at T=300K has across
K with NA: ND: ni = 4 ×103: 2 ×106: 1
sectional area of 0.01 cm2, length of p-
which of the following is/are correct at VR
length is 0.2cm and length of the n region
= 11.4 V_____. (MSQ)
is 0.1cm. The doping concentration are
(ϵr of Si = 11.7 & ϵo = 8.85 × 10–14 F/cm,
15 −3 16 −3
ND = 10 cm ,NA = 10 cm , then the
VT = 26 mV)
current through the diode in mA that A. Vbi ≈ 0.7 V
produces a 0.1Vdrop across the series B. Vbi ≈ 0.6 V
resistance is ______ C. |Emax|/|Evbi| = 0.22
(Take) D. |Emax||Evbi| = 4.50

n = 1350 cm2 /V − sec, p = 480cm2 /V − sec 14. A Si abrupt P – n junction has donor ion
concentration of 1.73 × 10 15/ cm3. The
12. Aluminium is alloyed into an n-type Si
junction capacitance is 18 PF when reverse
sample (Nd = 1016/cm3) forming an abrupt
bias of 3.2V is applied and it decreases to
pn junction, the acceptor concentration in
12 PF at 8.2 V then acceptor ion
alloyed region is Na = 4 × 1018/cm3.
concentration is _____________×
Determine the maximum electric field. (ε si
1018/cm3
= 11.8)

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15. The donor and acceptor impurities in an 19. For a silicon diode with long P and N
abrupt junction silicon diode arc regions, the acceptor and donor impurity
10 /cm and 4 × 10 /cm
16 3 18 3,
respectively.
concentrations are 1 x 1017 cm–3 and 1 ×
Assume that the intrinsic carrier
1015 cm–3, respectively. The lifetimes of
concentration in silicon ni = 1.5 ×
KT electrons in P region and holes in N region
1010/cm3 at 300°K. = 26 mV and
q are both 100 µs. The electron and hole
permittivity of silicon εsi = 1.04 × 10 –
diffusion coefficients are 49 cm 2/s and 36
12
F/cm. The built-in potential and the cm2/s, respectively. Assume kT/q = 26
depletion width of the diode under thermal
mV, the intrinsic carrier concentration is
equilibrium condition respectively are.
1× 1010 cm–3, and q = 1.6 × 10–19 C. When
A. 0.5V and 10–4 cm
B. 0.86V and 10–4 cm a forward voltage of 208 mV is applied
C. 0.85V and 3.33 × 10–5 cm across the diode, the hole current density
D. 0.85 and 10 –5
cm (in nA/cm2) injected from P region to N
16. For a Ge p – n junction diode, barrier
region is ______.
voltage is 0.2V, given NA = 3 × 1020 cm–3,
20. Calculate the maximum electric field at the
ND≫ NA. A = 0.01 cm2, ε = 141.584 × 10–
12
F/cm. Transistor capacitance at reverse junction of a silicon PN junction diode at

bias of 10V is _______ nF. 320K if it is doped with acceptor ion

A. 165.25 B. 182.45 concentration of 10 16/cm3 and donor ion
C. 120.12 D. 199.75 concentration of 1015/cm3?
17. Consider a GaAs p-n junction at T = 300k
(Given intrinsic carrier conc. of silicon at
having impurity doping concentration of
room temperature is 1.5 ×
NA = 1016 cm–3 and ND = 5 × 1016 cm–3 .F
or a particular device application, the ratio 1010 atoms/cm3, Boltzmann’s constant =
of junction capacitances of two values of 1.38 × 10–23 J/°k, Energy gap at 0°K is
reverse bias voltage must be 1.21 eV )
1
C (VRI )
j A. -1.12 × 104 V/cm
1
= 3 where the reverse bias voltage
C (VR2 )
j
B. 2.68 × 104 V/cm
VR1 = 1 V.
C. –1.12 × 109 V/cm
Assuming ni = 1.8 × 106 cm–3, VT = 26
D. –2.68 × 104 V/cm
mV. Find VR2?
18. The peak electric field in a reverse- biased Consider the impurity doping profile in a

silicon p–n junction is Emax = 3 × 105 V/cm. silicon pn junction as shown in figure.
The doping concentrations are ND = 4 × Assume that zero voltage is applied to the
10 15
cm –3
and NA = 4 × 10 17
cm . Find the
–3
pn junction. (For Si, relative permittivity
magnitude of the reverse bias voltage.
is ϵr = 11.7)
Assume
ni = 1.5 × 1010 cm–3 (Take VT = 26 mV)

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The ratio of slope and intercepts is k : w 02

= 10 : 7. (ni = 1.5 × 1010/cm3, ϵr , si =
11.7, VT = 26 mV)
A. The built in potential is 0.7 V
B. The built in potential is 0.49 V

21. The built-in potential barrier, Vbi, is C. The depletion with is 2.39 times of wo at

A. 47.95 V B. 24.52 V VR = 3.3 V

C. 0.635 V D. 1.242 V D. The depletion width is 3.41 times of wo

MSQs: at VR = 3.3 V

22. For an pn+ abrupt junction the variation of 23. A PN junction ‘1’ with 𝑁𝐴 = 𝑁𝐷 = 1012 /𝑐𝑚3

depletion width ‘W’ with applied reverse has reverse breakdown voltage 𝑉𝐵𝐷1 and

voltage are shown in the following fig.: depletion capacitance 𝐶𝑇1 . Another PN
junction ‘2’ with 𝑁𝐴 = 𝑁𝐷 = 10 /𝑐𝑚
10 3
has
reverse breakdown voltage 𝑉𝐵𝐷2 and
depletion capacitance 𝐶𝑇2 . Which among
the following is true?
A. 𝑉𝐵𝐷1 > 𝑉𝐵𝐷2 B. 𝐶𝑇1 < 𝐶𝑇2
C. 𝑉𝐵𝐷1 < 𝑉𝐵𝐷2 D. 𝐶𝑇1 > 𝐶𝑇2

ANSWER
`

1. A 2. B 3. A 4. A 5.B 6.B 7. D 8.(0.01) 9.A 10.(1.66)

11.(1.382) 12.A 13.B,D 14.(3) 15.C 16.B 17.(18.68) 18.(72.76) 19.(28.61) 20.A

21.C 22.A,C 23.C,D

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SOLUTION

1. (A) I 20  10−6  0.026

CD = = = 20 F
WND v T 1  0.026
xp0 =
NA + ND
5. (B)
 N + ND   NA  Capacitance of varactor diode is inversely
W = Xpo  A  = Xpo 1 + 
 ND   ND 
proportional to cube root of reverse biased
2. (B) voltage (v).
In PN junction diode, width of depletion C ∝ v-1/3
region increases by increasing the reverse 6. (B)
bias voltage. −qND
En = (xn − x) 0  x  xn
3. (A) 
−qNA
1 Ep = (xn + x) −xp  x  0
VBR = | E | xn 
2 C
W = xp + xn = xn At x = 0,
i.e., junction
for p+N Junction diode.
EP = En
2 si
xn = V −qNP −qND
qND BR (xp + o) = (xn − o)
 
NAXP = NDXn
7. (D)
We have the formula to find out Charge
stored on either side on a junction given as
follows,
1 2 si VBR
VBR = | EC |  NN 
2 qND QJ = q  A D  AW
 NA + ND 
si E2C We do not have the value of W with us, it
VBR = = 65V
2qND
needs to be calculated. This can be easily
∴ VBR ≅ 65V calculated using the following formula,
4. (A)
 2 s  1 1 
W=   +  VB where, VB = V0 –
Mean lifetime of holes = τh = 20 μs = 20 ×  q   ND NA 
10–6 sec
V, V is the applied
Diode forward current I = 26 mA = 0.026A
Voltage and V0 is the barrier potential.
Utility factor for germanium diode = ⴄ = 1
here V=0 as no external bias is applied .
Volt equivalent of temperature VT = 26 mV therefore, VB = V0 = 0.78V
or 0.026 V at 300K Then the value of W is 2.01 x 10-6 cm.
Diffusion capacitance due to holes in So the value of QJ is found out to be 1.61 x
germanium diode, 10-15 C

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8. Ans. C j2 Vbi + VR1

 =
The diffusion capacitance of diode in C j1 Vbi + VR2
forward bias is given by
0.75 + 0.25
I  C j2 = C j1 
* Cd = 0.75 + 8.25
Vt
1
= 5
* Whereas I = IoeV/ηVt 3
* Therefore, on solving. ∴ Cj2 = 1.66 PF
V1/ Vt
I0e 11. Ans.
Cd1 Vt
* = p-region:
Cd2 I0eV2 / Vt
Vt pL L L
Rp = = =
A p A A(eNA p )
0.5
* = eV1− V2/ Vt
Cd2 0.2
Rp = = 26.04
10−2  1.6  10−19  1016  480
0.5
* = e3.4−3.3/ Vt
Cd2 Similarly
0.5 n-region;
* = e0.1/0.026
Cd2 pL L L
Rn = = =
* On solving above equation we get A p A A(eNA p )
* Cd2 = 0.01 μF
0.1
Rn = = 46.3
9. (A) 10−2  1.6  10−19  1015  1350
Vz = 5v Pz = 400mw Izk = 10Ma Total series resistance is
R = Rp + Rn + 26.04 + 46.3 = 72.34 Ω
Vin min− vz Now we know that V=IR
 I2 min+ IL max
Rs So
0.1=I*(72.34)
IL max = 90mA
I2min = 10mA 0.1
I= = 1.382mA
72.34
10 − 5
 100  10−3 12. (A)
Rs
1 NaNd
Rs   103 V0 = VT / n
20 ni2

Rs < 50 Ω  4  1034 
= (0.26)/n  20 
= 0.85V
∵ Rsmax = 50Ω  2.25  10 
10. Ans. 2V0  1 1 
W=  + 
(range 1.6 to 1.7) q  Na Nd 
1 = 0.334 µm
Cj 
Vbi + VR

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14. Ans.

1
C j
Vbi + VRB

18 Vbi + 8.2
 =
12 Vbi + 3.2

Vbi + 8  2 9
 =
3.34  10 −5 Vbi + 3  2 4
xn0 = = 0.33m
1 + 0.0025
∴ Vbi = 0.8V
−(qNdxn0 )
E= N N 
 Now Vbi = VT ln  A 2 D 
 ni 
−(1.6  10−19 )1016 (3.33  10−5 )
=  N  1.73  1018 
11.8  8.85  10−14 0.8 = 26  10−3 ln  A 10 2 
 (1.5  10 ) 
=-5.1 x 104 V/cm
∴ NA = 3 × 1018 / cm3
13. Ans.: B, D are correct
15. (C)
2q(v0  VR )  NAND 
Sol. | Emax | =   Given ND = 1016/cm3 , NA = 4 × 1018/cm3,
  NA + ND 
ni = 1.5 × 1010/cm3
N N  Esi = 1.04 × 10–12 F/cm, q = 1.6 × 10–19 C,
Vo = VT ln  A 2 D  = 26 mV
 ni  VT = 26 mV
= 26 mV
[(4  103 )k] .[(2  106 )k] 
ln   V0 = ? W = ?
 (1k)(1k) 
We know that
ln[8 × 109]
N N 
(Where k is a proportional constant) V0 = VT ln  A 2 D 
 n1 
=0.592V
 4  1018  1016 
2q  1 1  V0 = 26  10−3 ln  10 2 
Emax = (VO + VR )  +   (1.5  10 ) 
  NA ND 
 4  1034 
V0 = 26  10−3 ln  20 
2q  1 1   2.25  10 

( vo + vR )  + 
| E Max. |  NA ND  V0 = 0.85V
 =
| Evbi | 2q  1 1 

( vo )  +  we know that
 NA ND 
2V0  1 1 
W2 =  + 
| Emax | VO + VR V 11.4 q  NA ND 
= = 1+ R = 1+
| Evbi | Vo VO 0.592
2  1.04  10−12  0.85  1 1 
W2 =  + 16 
| Emax | 1.6  10−19  4  1018
10 
= 4.50
| Evbi | W = 3.33 × 10–5 cm

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16. (B) 18. Ans.

q 2(V0 + VR )
Vj = (N w2 + NA wp2 ) Emax =
2 D n W
w = wn + wp N N 
Where, V0 = VT ln  A 2 D 
w ≈ wp (∵ ND≫ NA)  ni 
q
Vj = (N w2 )  16  1032 
2 A n V0 = 26  10−3 ln  20 
= 0.769V
 2.25  10 
2Vj
wp2 = And
qNA
2 1 1 
2Vj W=  +  (V0 + VR )
W = 2
p
q N
 A ND 
qNA

2VJ
w  wp =
qNA 2q(V0 + VR )  NAND 
∴ Emax =  
  NA + ND 
2  141.584  10−12  (0.2 + 10)
=
1.6  10−19  3  1020 2  1.6  10−19 (0.769 + VR )  16  1032
(3  105 )2 =
11.7  8.85  10−14  (1017  4 + 4  1015 )
w = 7.76 × 10–6 cm
9 × 1010 = 1223938126 (0.769 + VR)
A 141.584  10−12  0.01
CT = =
W 7.76  10−6 VR = 72.76 V

CT = 182.45 nF 19. Ans.

17. Ans. The hole current density injected from P

q  NAND  1 region to N region is given by

Cj (VR1 ) =  
2  NA + ND  (V0 + VR1 ) qni2Dp   VFB  
Jp = exp   − 1
NDLp   VT  
q  NAND  1
And Cj (VR2 ) =  
2  NA + ND  (V0 + VR2 ) Where,
Q = charge on electron
Cj (VR1 ) (V0 + VR2 )
=
Cj (VR2 ) (V0 + VR1 ) ni = Intrinsic carrier concentration in silicon
ND = Donor doping
Where,
DP = Hole diffusion coefficient
N N   5  1032 
V0 = VT ln  A 2 D  = 0.026 ln  6 2  Lp = Mean diffusion length of hole
 ni   (1.8  10 ) 
VFB = Forward voltage applied across diode
V0 = 1.21V
VT = kT/q = 26 mV
So,
1.21 + VR2 Lp = pDp = 100  10−6  36 = 0.06cm
2
(3) =
1.21 + 1
Using the above values, we get hole
1.21 + VR2 = 10.89 + 9
current density injected from P region to N
VR2 = 18.68 V
region is = 28.617 nA/cm2

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20. Ans. A. 21. (C)

We have the doping profile in a silicon pn
k = kq
junction as
−23
k 1.38  10
k = = = 8.613  10−5
q 1.6  10−19

Let T1 is room temperature ∴ T1 = 300 k

∴ni (T1) = 1.5 × 1010 atoms/cm3 and let

T2 = 320 k

We know that
−EGO
At T= 300K, the intrinsic concentration is
ni = A0 T 3/2e kT

ni = 1.5 x 1010 cm–3

3/2 −EGO  1 1 
ni (T1 )  T1   − 
K  T1 T2  In p-type region,
 =  e
ni (T2 )  T2  Na – Nd = 1016 cm–3
3 or Na = 1016 cm–3 (put Nd = 0)
10 −1.21 1 1
1.5  10  300  8.613102 ( − )
 =  e
−5 300 320
In n-type region,
ni (T2 )  320 
Na – Nd = –1015
1.5  1010 or Nd = 1015cm–3 (put Na = 0)
 = 0.0486
ni (T2 )
So, built in voltage is obtained as
∴ni(T2) = 3.084 × 1011 atoms/cm3 N N 
Vbi = Vt ln  a 2 d  = 0.0259
We know that,  ni 
 1016  1015 
kT  NAND  ln  10 2 
= 0.635 V
V0 = ln    (1.5  10 ) 
q  ni2 
22. Ans. A, C are correct.
1.38  10−23  320  1016  1015 
= ln  11 2   1
1.6  10−19  (3.084  10 )  2 1 
Sol.: w = (VO + VR )  + 
q  NA ND 
∴ Vo = 0.51 V
2  1 1 
2  1 1  w2 = (VO + VR )  + 
Now, W =  + V q  NA ND 
q  NA ND  O
2  1 
2  11.7  8.85  10−14  1 1  w2 = (VO + VR )   ( ND  NA )
= −19
  16 + 15   0.51 q  NA 
1.6  10  10 10 
2
W = 0.8515 × 10–4 cm w2 = (V + VR )
qNA O
−2Vo −2  0.51
Now Emax = =  2 
W 0.8515  10−4 2
w2 =   VR + Vo
 qN  q
Emax = –1.12 × 104 V/cm  A  NA

y = mx + c

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Given k : ωo2 = 10 : 7 40 2
w23.3 = w
 2  7 o
 
K m qNA  10
 2 = =  = w3.3 =
40
.wo
wo c  2  7 7
  vo
 qNA  23. Ans: C, D

vo = 0.7 Sol.
Relation between breakdown voltage and
2  2   2 
watVR =3.3 V   3.3 +   (0.7) doping is given as:
 qNA   qNA  1
𝑉𝐵𝐷 ∝
 2  𝐷𝑜𝑝𝑖𝑛𝑔
w2 = 4  
 qNA 
⇒ 𝑉𝐵𝐷1 < 𝑉𝐵𝐷2

 2 
4  𝜖𝐴 1
 qNA 
2
w 𝐴𝑙𝑠𝑜 𝐶𝑇 =
𝑊
𝑎𝑛𝑑 𝑊 ∝
3.3
2
= √𝐷𝑜𝑝𝑖𝑛𝑔
w 0  2 
  (0.7) ⇒ 𝐶𝑇 ∝ √𝐷𝑜𝑝𝑖𝑛𝑔
 q NA 
⇒ 𝐶𝑇2 < 𝐶𝑇1



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Chapter

3 PN Junction Diode

1. A diode has a leakage current of 10 μA at 5. A silicon diode has a forward current of 1

certain temperature. Find the value of mA and carrier lifetime τ = 10 –7 sec
leakage current when the temperature is and maximum diffusion capacitance of 1nF.
increased by 25°C (________ μA). This diode is operating at a temperature of
2. The diffusion resistance of the diode shown ____K. (Assume ηi = 2 for Si)
in the below figure will be _______ Ω. A. 480 K B. 593 K
(Assume (VT = 25 mV, n = 1). C. 580 K D. 493 K
6. Silicon diodes D1& D2 in the circuit of the
figure given below have saturation current
of 1nA & 20 nA, respectively at 300 K find
V2 in fig
n = 1 for Ge
n = 2 for Si
A. 14 B. 0.35
C. 12.5 D. 0.7
3. The temperature dependence of a PN-
junction diode is given by
IT = IS(T0)e0.048(T–T0).
If T0 = 298K , then the temperature T at
A. 4.9975 V B. 5.9975 V
which the current becomes double is:
C. 6 V D. 5 V
A. 248K
7. In an abrupt PN junction the doping level
B. 312.44K
on the n – side 7 times to the doping level
C. 348K
on the p – side. The ratio of the depletion
D. cannot be determined
longer width from p side to n – side is
4. For a pn+ abrupt junction diode, the doping
_________
concentration on P side is 3 × 10 18/cm3. If
8. The germanium semiconductor diode
electrical field at breakdown is 4 × 106
having a forward bias of 200 mV and
V/cm then breakdown voltage will be
reverse saturation current of 1μA at room
approximately __________ V.
temperature. Then the ac resistance
__________(in Ω).

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9. A forward biased PN diode, when carrying 12. If the current through diode is 0.5 mA at
negligible current has a voltage drop of V0 = 340 mV, Assuming VT = 25 mV and n
0.65V. When the current through the diode
= 1 the value of current at vD = 440 mV is
increases to 0.5A, it dissipates 1W. The ON
resistance of the diode is ___________(in ………mA.

Ω) 13. The circuit shown is fig a voltage regulator,

A. 2.7 B. 3.5 all the doides are identical and have the
C. 4.5 D. 6.5
characteristics is shown below fig B. Find
10. In a Si pn abrupt junction with cross
sectional area A has the following the regulation of Vo. when Vb increases
properties at T = 300 k as p-type & n-type from its nominal value of 4V to the value
doping are NA, ND respectively.
6V . Given R= 2kΩ, VF=0.5V and Rf =50Ω.
Minority carrier lifetimes are τn, τp, is
Majority carrier mobilities are μ n, μ p and
minority carrier mobilities are μ n′, μ p′

respectively. Let the forward current is I at

V volts. Assume each above parameter is
scaled by ‘k’ times then (ni = 1.5 ×
1010/cm3, VT = 26 mV)
[MSQ]
A. The new current is I′ = KI at same A. 0.226 B. 0.042
voltage C. 0.081 D. 0.209
B. the new current is I′ = I at same
14. Consider a PN junction at T = 300 K with
voltage
acceptor concentration Na = 1017/ cm3 and
C. The new Debey length L p′ = L
D. the new Debey length Ln′ = kL donor concentration Nd = 1016 / cm3. If the
11. If in the circuit two diodes are identical & acceptor doping is decreed to
made up of Ge then
1016 /cm3 and all other parameters remain

same then percentage increase in built in

potential will be _____ %.

(Assume ni = 1.5 × 1010 / cm3)

15. At 300 K for a diode current of 1 mA, a

certain Ge diode requires a forward voltage

− qv2

A. eqV1 /kT − e kT
=2 of 0.1435 V, whereas a certain Si diode
qv1 − qv2
requires a forward voltage of 0.781 V
B. e kT + e kT
=2
− qv1 qv2 under the condition given above. For the
C. e kT
− e kT = 2
given conditions, calculate I0(Ge) / I0(Si)? (in
− qv1 qv2

D. e kT
+e kT
=2 …. 10-5 A)

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16. Each diode in figure has Vy = 0.6V and rd = A. 4.3 V B. 5.7V

0Ω. Both the diodes will be ON if? C. 3.8 V D. 1.9V
20. A Si diode operates at a fixed forward bias
of 0.4V. Calculate the factor by which the
current will get multiplied when its
temperature is raised from 25°C to 150°C.
A. Vs > 3.9V B. Vs > 4.9V
A. 500.21
C. Vs > 6.3 V D. Vs > 5.3V
B. 577.03
17. If Io for germanium diode is given by the
C. 650.27
−EG0

relation Io = KT 2e nVT
and EG0 = 0.785 V D. 700.55

Then calculate by what factor IO gets 21. The reverse saturation current density in

multiplied when temperature is increased μA/cm2 for a Silicon diode is 40. Given 1V

from 25°C to 85°C of forward bias, area of diode = 10–4 cm2 ,

A. 178.09 B. 241.9 VT = 26 mV, calculate current through

C. 11.11 D. 418.2 diode (in A)

18. Two diodes D1 (Ge) and D2 (Si) have same MSQ:

ID. Assume in both diodes, effect of I 0 due 22. A Si diode with 𝐼𝑜 = 6 𝜇𝐴 current flowing

to temperature is same and D1 was through it will have a

carrying a current of 10 mA at a voltage of A. forward current of 542.6 𝜇𝐴 for 𝑉𝐷 = 0.2 𝑉

0.3V. Assume temperature is 27°C. B. forward current of 2.415 𝑚𝐴 for 𝑉𝐷 = 0.3 𝑉

(Thermal voltage is 26 mV) If D1 is C. forward current of 274.8 𝜇𝐴 for 𝑉𝐷 = 0.2 𝑉

replaced by D2, then calculate current D. forward current of 1.915 𝑚𝐴 for 𝑉𝐷 = 0.3 𝑉

through D2 at 77°C. (Assume voltage is 23. A PN junction ‘1’ with 𝑁𝐴 = 𝑁𝐷 = 1012 /𝑐𝑚3

kept constant). has reverse breakdown voltage 𝑉𝐵𝐷1 and

A. 6.72 Ma B. 0.99 mA depletion capacitance 𝐶𝑇1 . Another PN

C. 0.46 mA D. 3.20 mA junction ‘2’ with 𝑁𝐴 = 𝑁𝐷 = 10 /𝑐𝑚

10 3
has

19. For the ideal diode circuit shown in figure, reverse breakdown voltage 𝑉𝐵𝐷2 and

V0 is ____________? depletion capacitance 𝐶𝑇2 . Which among

the following is true?
A. 𝑉𝐵𝐷1 > 𝑉𝐵𝐷2
B. 𝐶𝑇1 < 𝐶𝑇2
C. 𝑉𝐵𝐷1 < 𝑉𝐵𝐷2
D. 𝐶𝑇1 > 𝐶𝑇2

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ANSWER

1.(56.56) 2.C 3.B 4.(17.257) 5.C 6.B 7.(7) 8.(11.86) 9.A 10.B,D

11.B 12.(27.3) 13.C 14.(-7.9) 15.(7.48) 16.A 17.B 18. C 19.A 20.B

21.(0.89) 22.C,D 23.C,D

SOLUTION

1. Ans. From (1) and (2)

I01 = 10 μA at I1 2IS(T0) = IS(T0)e0.048(T1 – T0)
I02 = ? When T2 = T1 + 25°C ∴ 2 = e0.048(T1 – 298)
∴ I02 = I01 ∴ 0.693 = 0.048 (T1 – 298)
 T2 − T1 
  ∴ T1 = 312.44 K.
10 
2 = 10A  (2)2.5 = 56.56A
4. Ans.
2. (C)
1
| E | xp = VBR
Let I be the forward current flowing 2 0
through the diode Since the diode is point xp ≫ xn
∴ –9 + 0.7 + 4.15I = 0 ∴ W = xn + xp = xp
9 − 0.7 2Si  1 
∴ I=
4.15 and xp = (V )
q  NA  BR
∴ I = 2mA.
1 2si
VT ∴ | E0 | V = VBR
∴ Diffusion resistance = r = 2 qNA BR
I

25  10−3 S1 | E0 |2
=  VBR =
2  10−3 2qNA
∴ r = 12.5
11.2  8.85  10−14  16  1012
3. (B) =
2  1.6  10−19  3  1018
IT = IS(T0) e0.048(T – T0)
 VBR = 17.257V
Now at T = T0
IT0 = IS(T0) e0.048(T0 – T0) 5. (C)

∴ IT0 = IS(T0) Given data:

Now at temperature T1 the current If = 1 mA

becomes double CD = 1 nF

∴ IT1 = 2IT0 = 2IS(T0) …… (1) η=2

∴ at temperature T1 If
CD = g =
VT
IT1 = IS(T0)e0.048(T1 – T0) ………. (2)

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10−7  10−3 Reverse saturation current = ID = 1μA =

 10−9 =
2  VT 10–6A
T 1 VT
 VT = = ac resistance of diode = R =
11600 20 IDeV / VT
⇒ T = 580 K 1  0.026
R= = 11.86
6. (B) 1  10−6  e0.2/0.026
Taking ⴄ = 1 for Ge. Diode
9. (A)
VD = 0.65 When negligible current is
flowing through diode.
PD = 1W When current through diode
increases to 0.5 A
By KCL i1 = i2 RD = ?
D1 is FB ∵ 20nA, the saturation current of Diode- equivalent:
D2 will flow through circuit
D2 is RB ∵ i1 = – i2 = 20nA
To calculate v1 ,
 v  ∴ Vy = 0.65 V
i1 = ls1  2vT 1  → diode current eqn
 e − 1 VD = Vy = 0.65 V When I0 = 0 A
V1 = 0.00244V ⇒ PT = VD ID = 1W
∵ V2 = 6–V1 = 5.9975V (By KVL) (Vy + ID RD) ID =1
7. Ans. [0.65 + (0.5) RD] (0.5) = 1
given ND = 7NA 0.5 (RD) = 2 – 0.65.
Depletion width on p – side ⇒ RD = 2.7Ω
ND 10. Ans. B, D are correct.
wp =
NA + ND
Sol.:
Depletion width on n – side
NA (
I = I0 eV /v0 − 1 )
wn = w
NA + ND (v/n v )
I  Ioe o

wp ND
= =7  v 
wn NA  
I  Ioe 0 
v

8. Ans.
D D 
At room temperature (300 K) I0 = qA  p pn + n np 
VT = 26 mV = 0.026 V  Lp Ln 

Applied forward voltage = V = 200 mV = ni2 n2

Pn =  Pn = i  Pn = Pn / k
0.2 V ND kND

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ni2 n2 12. Ans.

np = → np = i  np = np / k
NA kNA We know that

Dp = p v T  Dp = kp v T  Dp = kDp  VD −1 

ID = Is  enVT 
 
 
Dn = nv T  Dn = knv T  Dn = kDn
 340 −1 
 0.5 = Is  e 25  ………(1)
Debey length:
 
Lp = Dp Tp  Lp = k Lp  440 −1 
& ID2 = Is  e 25 
 
Ln = DnTn  Ln = k Ln
0.6 806.13  103
 =
 kDp kDn  ID2 44.01  103
I0 ' = qKA  (pn / k) + (np / k)
 kLp kLn  ID2 = 27.3 mA

Io = Io 13. (C)

Then ⇒ I = I

11. (B)
I = Io [ev/nvT –1] current in diode
D1 is in Forward Biased D2 is in Reverse
Biased
∵ I1 = Io2 = –I2As identical diode ⇒ Io1 = R = 2 kΩ
Io2 = Io Rf1 = 2 RF = 100 Ω
 V1   nv
− v2
 Vf1 = 2VF = 1V
 I01 enVT − 1 = −l02 e T − 1
    Rf2 = 4 RF = 2(50) (2) = 200 Ω

 VV1 − V2
 Vf2 = 4VF = 2V
 I0 e + e VT
T
 = 2lO A sn = 1 for Ge
  Vb − Vf1 − Vf2
Ib =
R + Rf1 + Rf2
V1 − V2

e VT + e VT = 2 ( A ) V0 = VF2 + IbRF2
But we know that (Vb − VF1 − VF2 )RF2
= VF2 +
KT R + RF1 + RF2
VT =
q
(B)
For Vb1 = 4V
Put (B) in equation (A)
Vo1 = 2.09V
We get
Vb2 = 6V ⇒ Vo2 = 2.26V
qv1 − qv2

e kT
+e kT
=2 VO2 − VO1
regulation = = 0.081
VO1

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14. Ans. -7.9 Apply KCL at node V1.

NA1 = 10 17
/ cm ND = 10
3 16
/ cm 3
VS − 0.6 − V1 VS − V1 V V − 0.6
NA2 = 10 16
/ cm ni = 1.5 × 1010 / cm3
3 + = 1 + 1
5 5 0.5 0.5
 NA1ND 
 Vb1 = KT ln  2  VS − 0.6 − V1 + VS − V1
 ni  = 2V1 + 2V1 − 1.2
5
Vb2 − Vb1
Now percentage increase =  100 ⇒ 11V1 = 2.7 + VS ….(1)
Vb1
VS − 0.6 − V1
N N  N N  ID1 =  0 for ON
KT ln  A2 2 D  − KT ln  A1 2 D  5k
 ni   ni   100
=
N N  ⇒ VS > 0.6 + V1
KTn  A1 2 D 
 ni  From equation (1)
N N  N N  ∴ VS > 0.93 V for diode D1 to ON
ln  A2 2 D  − ln  A1 2 D 
ni  ni   100
=  
ID2 =
V1 − 0.6
 0 for ON
N N  0.5k
ln  A1 2 D 
 ni 
⇒ V1 > 0.6
N 
ln  A2  From equation (1)
=  NA1   100
∴ VS > 3.9 V for diode D2 to ON
N N 
ln  A1 2 D  ∴ For both diodes to ON, VS > 3.9V.
 ni 
 1016  17. (B)
ln  17 
 10 
−EGO
=  100 = −7.9% I0 = KT2e nkT
 1017  1016 
ln  10 2 
 (1.5  10 )  Now T1 = 25°C = 298 K

15. Ans. T2 = 85°C = 358 K

 VD  We know that n = 1 for Ge
ID = I0  e VT − 1 
  Now
 
−EGO  1 1 
 0.1435−3  l02  T2 
2  − 
¯ T
 2 T2 
⇒ ID (Ge) = I0(Ge) e12610  (ignoring 1) =    e 1K
  l01  T1 
= 1mA 2 −0.7851.610−19  1 1 
 358   − 
11.3810−23  358 298 
 
0.781 =  e
ID(Si) = I0(Si) e22610  = 1mA  298 
−3

 
= 1.44322 × 167.67
From both above equations
0.1435 lO2
I0(Ge)  = 241.984
e 0.026 lO1
= = 7.48  10−5
I0(Si) 0.781
e 0.052
18. (C)
16. Ans. A. I = I0 [eV/ⴄVT – 1]
Let both diodes are ON.
10 mA = I0 [e 0.3/(1 × 26 × 10–3)
–1]
I0 = 97.48 nA.
At 77°C, I0 = 2 (77 - 27)/10
× 97.48 nA =
3.12 μA

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T(K) 77 + 273 ID2 5792.6I01 e

0.4 /20.03646
− 1
VT = = = 0.03V = 
11600 11600 ID1 
I01 e0.4 /20.02568
−1 
 
(Since by default I0 gets doubled for every
ID2 = 577.03 ID1
10°C rise in temperature of Si and Ge
21. Ans.
diodes)
J0 = 40 × 10–6 A/cm2
I = 3.12 μA [e 0.3/(2× 0.03)
–1] = 0.46 mA
I0
(∴ ⴄ = 2 for Si diode) = 40  10−6
A
19. (A)
I0 = 40 x 10–6 × 10–4 = 40 × 10 –10

D1 = OFF and D2 = ON  VD   1 
I = I0  e VT − 1  = 40  10−10  e22610 − 1  = 0.899A
−3

The given circuit is redrawn as:    

   

22. Ans: C, D
Diode current in FB is given by:
𝑉
𝐼 = 𝐼𝑜 (𝑒 𝜂𝑣𝑇 − 1)

For 𝑉𝐷 = 0.2 𝑉
0.2

Req = 6.8k || 2.2k = 1.66kΩ 𝐼 = 6 × 10−6 (𝑒 0.026×2 − 1)

10 ⇒ 𝐼 = 274.8 𝜇𝐴
I= = 2.59mA
3.86k For 𝑉𝐷 = 0.3 𝑉
V0 = IReq = 4.3 V. 0.3
𝐼 = 6 × 10−6 (𝑒 0.026×2 − 1)

⇒ 𝐼 = 1.915 𝑚𝐴
20. (B)
23. (C, D)
VD = 0.4 V
Sol.
 VD 
ID = I0 e VT − 1 Relation between breakdown voltage and
 
doping is given as:
If the temperature changes, I0 and 1
𝑉𝐵𝐷 ∝
VT changes 𝐷𝑜𝑝𝑖𝑛𝑔

T 25 + 273 ⇒ 𝑉𝐵𝐷1 < 𝑉𝐵𝐷2

25 C : VT1 = = = 0.02568V
11600 11600
T 150 + 273 𝜖𝐴 1
150 : VT1 = = = 0.03646V 𝐴𝑙𝑠𝑜 𝐶𝑇 = 𝑎𝑛𝑑 𝑊 ∝
11600 11600 𝑊 √𝐷𝑜𝑝𝑖𝑛𝑔
 T2 − T1  ⇒ 𝐶𝑇 ∝ √𝐷𝑜𝑝𝑖𝑛𝑔
 
I02 = I01 2  10 
⇒ 𝐶𝑇2 < 𝐶𝑇1
 150 − 25 
 
I01  2 10  = I01  212.5 = 5792.6I01



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Chapter

4
Bipolar Junction Transistor

1. While using a bipolar junction transistor as 4. A CB active BJT has a emitter current 1mA,
amplifier, the collector and emitter emitter efficiency 0.99, base transport
terminals got interchanged mistakenly. factor 0.995, then the base current is
Assuming that the amplifier is a common
____μA(Neglect ICBO)
emitter amplifier and the biasing is suitably
5. In a Si BJT at 300K, If the emitter current
adjusted, the interchange of terminals will
is doubled, the voltage across its Base-
result into which one of the following?
A. Zero gain Emitter junction must be: (Take VT = 25.5

B. Infinite gain mV)

C. Reduced gain A. Constant
D. No charge in gain at all B. Doubled
2. Find the region of operations of transistor
C. Halved
given below respectively?
D. Increased by 35 mV

6. If the emitter injection efficiency of a

transistor is 0.94 and common base

current gain of the transistor is 0.97. Then

base transport factor will be __________.

7. A BJT has  =0.99, IB = 25 μ A, ICBO=

200n, Find percentage error in the emitter

current if the leakage current is neglected.

A. Active region, Active region
B. Cutoff region, Reverse active regions A. 0.358 B. 0.71

C. Active region, Saturation region C. 0.43 D. 0.97

D. Saturation region, Reverse active region 8. The change in collector voltage from 1V to
3. An emitter in a bipolar junction transistor 3V, where VBE is constant. If the collector
is doped much more heavily than the base
current change is restricted to be less than
as it increases the
5% what is the value of early voltage VA?
A. Emitter efficiency
A. VA > 39V B. VA < 39V
B. Base transport factor
C. Forward current gain C. VA > 26mV D. VA < 26mV

D. All the three given above

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9. In the circuit figure, Q1 and Q2 are identical 12. A transistor with emitter-base voltage (VEB)

and operate in active mode. Determine of 20m V has a collector current (IC) of 5

V1 – V2 (in mV) such that IC1 = mA . For VEB of 30 mV, IC is 30 mA . If

VEB is 40 mV, then IC will be?
10IC2 (Assume at 100 temperature) (VT =
A. 55 Ma B. 160 mA
25.8 mV)
C. 180 mA D. 270 mA
13. The state of transistor is
(Given β = 150, VBE(sat) = 0.8 V,
VBE(active) = 0.7 V,
VCE(sat) = 0 V
VD for D, D2 = 0.7 V)

10. A BJT in CB configuration is used to amplify

a signal received by a 50Ω antena. Assume

KT
= 25mV, the value of collector bias
q

current required to match the input

impedance of the amplifier to the

A. Cut off B. Active
impedance of the antenna is ____(in mA).
C. Saturation D. Inverse Active
11. In the circuit shown,
14. For the transistor shown below, the value
VCC = 10 V, RC = 2.7kΩ, RF = 200kΩ,
of current gain (  ) is _____. (Assume
β = 99, VBE = 0.6V. The operating point
VBE = 0.7V)
VCE, IC are given by?

15. In CE configuration, the ratio of breakdown

voltage with emitter open circuited to that
A. 4.6 V & 1.98 mA
of open circuit base is 0.387, DC current
B. 3.18 V & 2.5 mA
gain is 60 then the sharpness of onset of
C. 5.4 V & 1.56 mA
breakdown controlling parameter is
D. 4.2 V & 2.1 mA
…………..

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16. For a BJT with β = 100 and dc collector A.

current of 1mA, VT = 25 mV. Then the
value of re is?
A. 30 Ω B. 40 Ω
C. 25 Ω D. 50 Ω B.
17. What is base transit time (in psec) for
electron in the npn transistor with base
doping level of 1017 cm-3 and base width
wB = 0.1 μm and electron diffusion C.
constant Dn = 20 cm /sec ?
2

MSQs:
18. A p-n-p BJT has doped p sides with a
concentration NA = 1017/cm3 and n side D. The barrier potential between p-n

with a concentration ND = 1019/cm3 at J = junction is 0.933 V

300K 19. For a transistor circuit having, 𝐼𝐶𝑂 = 𝐼𝐶𝐵𝑂 =

(Assume VT = 0.0259 V). Which of the 2 𝜇𝐴 and 𝛼 = 0.98 then

following is/are correct? A. the value of 𝐼𝐶𝐸𝑂 = 100 𝜇𝐴

B. the value of 𝛽 = 99
C. the value of 𝛽 = 49
D. the value of 𝐼𝐶𝐸𝑂 = 200 𝜇𝐴

ANSWER

1.C 2. D 3. D 4.(14.95) 5.D 6.(0.97) 7. B 8. A 9.(0.059) 10.(0.5)

11.A 12.C 13.B 14.(0.992) 15.(4.31) 16. C 17.(2.5) 18.A,D 19.A,C

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SOLUTION

1. (C) Given
Since the doping of emitter is higher than Common base current gain, α = 0.97

that of collector, Emitter injection efficiency, γ = 0.94

Therefore, on interchanging the emitter  0.94

Base transport factor β* = = =
 0.97
and collector terminals, gain will be
0.969 ≈ 0.97
reduced.
7. (B)
2. (D)

(a) (b) =
1−
JE : FB JE : RB = 0.99/ (1-0.99) =99
JC : FB JC :FB case1:
Saturation Region Reverse active Region Collector current IC = (IB) β + (1+ β )
3. (D) ICBO =2.495mA
Due to the heavily doped emitter, it Emitter current = (IC - ICBO) /  =2.518
supplies more charge carries. Because of mA.
this region, IE increases, IC increases, Case 2: collector current IC= (IB)

emitter efficiency, base transport factor β =2.475mA

and forward current gain increases. Emitter current = (IC) /  =2.5 mA.

4. Ans. Percentage change in emitter current =

[(2.518 -2.5)/2.518]*100 = 0.71
 =   
8. (A)
α = 0.99 × 0.995 = 0.98505 Given
IC= α IE + ICBO = αIE (Neglect ICBO) dIC 5
 , dVCE = 3 − 1 = 2V
IC = 0.98505 × 1 × 10–3 =985.05 μA IC 100
IB = IE – IC = 1mA – 985.05 μA VBE
VT  VCE 
IB = 14.95 μA IC = IC0 e 1 +   (1)
 VA 
5. (D) VBE
VT  dVCE 
IE2 = 2IE1 dIC = IC0 e    (2)  VBEcons tan t 
 VA 
VBE2 VBE1
VT VT dIC dVCE 5
IS (e − 1) = 2IS (e − 1) = 
IC VA + VCE 100
VBE2 − VBE1
VT 2 5
e 2  
VA + VCE 100
VBE2 – VBE1 = ln(2) × ηVT
⇒ 40 < VA + VCE, where initial VCE = 1V
VBE2 – VBE1 = 0.6931 × ηVT
VA > 39V
VBE2 = VBE1 + 0.03534
9. Ans.
6. Ans.

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(
ID = IS eVD /nVT − 1 ) We know that IC = I0 eVEB/VT

ID  IS (e VD /nVT
) 5 = I0 e20/VT …(1)

and 30 = I0 e30/VT …(2)

Given IC1 = 10 IC2
( V1 − V2 ) from equation (1) and (2)
10 = IS e ( V1 /VT
)=e VT
e10/VT = 6

V1 – V2 = VT ln(10) = 0.05954 V 5
So, I0 = mA (from equation(1))
10. Ans. 36

Step-1: So, IC = I0e40/VT

To match the input impedance of the 5
IC =  64 = 180 mA
amplifier with the impedance of the 36
antenna, re should be equal to the
13. (B)
impedance of antenna.
VCC − VBE (Active)
i.e. re = 50Ω IB (Active) =
KB
1 1
gm = = = 0.02 A/V
re 50 5.0.7
= = 0.043mA
100K
Step-II:
But we have  V − VCE (sat)   5 − VCE (sat) − 0.7 
IC (sat) =  CC + 2
 1k   4k 
IC
gm =
VT IC(sat) = 7.15 mA

1 As, IC(active) < IC (sat)

⇒ IC = VT gm = 25mV 
50
∴ The transistor is in active region.
 kT 
 VT = q  14. Ans.
 
VE = 0 VC = 1.5V
∴ IC = 0.5 mA.
VB = 0.7V
11. (A)
VCC = (IC +IB)RC +IBRF + VBE 1.5 − 0.7
IB = = 25A
32K
VCC – VBE = ICRC + IB(RC + RF)
IC IE = 3mA
9.4 = 2.7kIc + (2.7k + 200k)
99 IB (1 + β) = 3 × 10–3
9.4 = 2.7k IC + 2.05k IC
3  10−3
9.4 =4.75 k IC 1+ = = 120
25  10−6
9.4
IC = = 1.979mA β = 119
4.75k
IC  119
IB = = 19.98A ∴ = = = 0.992
3 1 +  120
VCE = VCC – (IC + IB) RC = 4.6 V 15. Ans.
12. (C)

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VCEO N 
= 0.387 Ei − EF = KT ln  A  = 0.0259
VCBO  ni 
1  10 17

& VCEO = VCBO n ln  10 
= 0.406 eV
 1.5  10 

1 On n-side
 (0.387)n =
60
N 
EF − Ei = KT ln  D  = 0.0259
 1 
 nlog(0.387) = log    ni 
 60 
 10 19

∴ n = 4.31 ln  10 
= 0.526 eV
1.5  10 
16. (C)
IC = 1mA Barrier potential between P of n
IC 1mA kT   NAND    1017  1019 
gm = = = 40mA / V Vbi = ln  2   = 0.0259ln  10 2 
VT 25mV q   ni    (1.5  10 ) 
 0.99 Vbi = 0.933 V
re = = = 25
gm 40mA / V
OR
17. Ans. = 2.5p sec
Vbi = [(Eip − EFp ) + (EFn − Ein )] /
Base transit time is given as
q = (0.406 + 0.526) = 0.933 V
w2
tr = B
2Dn 19. (A, C)
𝛼
( )
2 𝛽=
10−5 1−𝛼
=
2  20 0.98
⇒𝛽=
1 − 0.98
= 2.5  10−12 sec = 2.5p sec
⇒ 𝛽 = 49
18. Ans. A & D are correct
𝐼𝐶𝐸𝑂 = (1 + 𝛽)𝐼𝐶𝐵𝑂
On p-side
⇒ 𝐼𝐶𝐸𝑂 = (1 + 49)(2 𝜇𝐴)
⇒ 𝐼𝐶𝐸𝑂 = 100 𝜇𝐴

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Chapter

5
Field Effect Transistor

1. Statement (I): Thermal runaway is not 4. Determine the relation between

possible in an FET. transconductance (gm) versus Vgs and
Statement (II): As the temperature of FET transconductance versus Ids in JFET.
increases, the mobility of carriers A. transconductance increases linearly with
decreases. Vgs and increases parabolically with Ids.
A. Both Statement (I) and Statement (II) B. transconductance increases linearly with
are individually true and Statement (II) is Vgs and decreases parabolically with Ids.
the correct explanation of Statement (I). C. transconductance decreases linearly
B. Both Statement (I) and Statement (II) with Vgs and increases parabolically with
are individually true but Statement (II) is Ids.
not the correct explanation of Statement D. transconductance decreases linearly
(I). with Vgs and decreases parabolically with
C. Statement (I) is true but Statement (II) Ids.
is false. 5. An P channel JFET has maximum full
D. Statement (I) is false but Statement channel width of 10 mm, channel
(II) is true. resistance of 500ohms. Depletion region is
2. Consider the following statements related present on both sides of channel due to
to JFET: built in potential of 2V. Calculate the
1) Its operation depends on the flow of channel resistance when VGS = –6V.
minority carriers only. A. 1000 Ω B. 500 Ω
2) It is less noisy than BJT C. 480 Ω D. 962 Ω
3) It has poor thermal stability. 6. An n channel JFET has maximum full
4) It is relatively immune to radiation. The channel width of 10 μm and channel
correct statements are resistance of 600 ohms, if depletion width
A. 1, 2, 3 and 4 B. 1 and 2 only of 1 μm is present on both sides of
C. 2 and 4 only D. 3 and 4 only channel due to built in potential of 1 volt
3. In a JFET, operating above pinch-off then channel resistance when Vgs =0 v
voltage, the and Vgs = -3 v.
A. drain current increases steeply A. 750 ohms , 1k ohms
B. drain current remains practically B. 360 ohms , 500 ohms
constant C. 750 ohms , 360 ohms
C. drain current starts decreasing D. 500 ohms , 1k ohms
D. depletion region reduces

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7. In a JFET, operating above pinch-off Statement 3: FET does not suffer from
voltage, the thermal runaway while BJT does.
A. drain current increases steeply A. Statement 1 is correct only
B. drain current remains practically B. Statement 1 and 2 are correct only
constant C. Statement 2 and 3 are correct only
C. drain current starts decreasing
D. Statement 1 and 3 are correct only
D. depletion region reduces
9. An n-channel JFET has IDSS = 2mA and
8. Choose the correct option after reading
VP = –4V. It transconductance gm (in milli
below statements:
mho) for an applied gate to source voltage
Statement 1: FET is a voltage-controlled
Vgs of –2V is
device while BJT is a current controlled
A. 0.25 B. 0.5
device.
Statement 2: FET and BJT both are bipolar C. 0.75 D. 1.0

device.

ANSWER

1. A 2. C 3. B 4. C 5. D 6. A 7. B 8. D 9. B

SOLUTION

1. (A) drain current also increases, as shown in

2. (C) the drain characteristics of JFET. The

The operation of JFET depends on the flow region where Ic increases with Vds is called
non saturated region or triode region. After
of majority earners Due to absence of
a certain voltage called pinch off voltage
minority earners. FET IS less no1sy than
the drain current ceases and it remains
BJT as well as 1t has high thermal stability. constant even in the increase in Vds. This
3. (B) region is called saturation/pentode region.
4. (C)
Ids
gm = gmo(1 - Vgs/Vp) , gm =
Vgs
where gmo = 2 Idss / |Vp|
Ids 2Idss  Vgs 
= 1 −  ===> gm is
Vgs | Vp |  Vp 
Initially when drain to source voltage
decreasing linearly with Vgs
increases (by keeping Vgs = constant). The

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Ids 2Idss  Vgs  2 7. (B)

= 1 − = IdsIdss
Vgs | Vp |  Vp  | Vp |

===>gm is increasing parabolically with

Ids.
5. (D)

W2 V0 + VGS2
= Initially when drain to source voltage
W1 V1 + VGS1
increases (by keeping Vgs = constant). The
W2 2+6 drain current also increases, as shown in
=
1.2 2+0
the drain characteristics of JFET. The
W2 = 2.4μm region where Ic increases with Vds is called
Now, non saturated region or triode region. After
R (ON) a certain voltage called pinch off voltage
RDS = DS

1− the drain current ceases and it remains
a
constant even in the increase in Vds. This
500  a = 10m 
= \ RDS = 961.53Ω
2.4  a = 5m  region is called saturation/pentode region.
1−
5 8. (D)
6. (A) 9. (B)
given full channel width = 2a = 10 μm, We know that current ID
depletion width = w =1μm  Vgs 
2

ID = IDSS 1 − 
Rds on = 600 ohms  Vp 
case 1 : Vgs = 0 v
And
Rds = Rds on /(1-w/a)
ID 2I  Vgs 
on substituting , Rds = 600 / (1- 1/5) = Im = = − DSS 1 − 
Vgs VP  VP 
750 ohms
case 2: vgs = -3 v 2  2  10−3  (−2) 
Im = 1 − (−4) 
−4  
width  Vgs + Vo
Im = 0.5 × 10–3 mho
Vgs1 + Vo
w1 /w2 = Option (B) is correct.
Vgs2 + Vo

On substituting, w2 = 2 μm, Rds = 600/(1-

2/5) = 1000 ohms.

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Chapter

6 MOS Capacitor

1. Consider the dc charge distribution of an A. T B. R

ideal MOS capacitor shown in figure below. C. Q D. P
Diagram 4. Find the maximum depletion width region
for ideal MOS capacitor on p-type silicon
with Na = 1016/cm3. given relative
dielectric constant of silicon is 11.8
A. 0.301 μm B. 0.241 μm
C. 0.361 μm D. 0.271 μm
5. The C-V characteristic exhibited by an
What is the type of semiconductor and
MOS-C (assumed to be ideal) is shown in
mode of biasing?
figure
A. n-type, depletion B. n-type, inversion
C. p-type, depletion D. p-type, inversion
2. In the MOS process, structure like the gate
of a transistor are used to make capacitors
as well. If the oxide thickness is 4nm, what
area is needed to achieve a capacitance of
The semiconductor component of the MOS-
1pF? (the permittivity of silicon dioxide is
C is doped with
3.9 ϵo)
A. p-type B. n-type
A. 1.16 × 10–6 cm2
C. intrinsic D. Can’t be say
B. 3.82 × 10–5 cm2
6. In a MOS capacitor, with the high
C. 4.51 × 10–6 cm2
frequency C-V characteristics given below
D. None of the above
have area of 2 × 10–4 cm2 × 10–4
3. The C-V plot of an n-channel MOS
cm2.Given that permittivity of si and
capacitor is shown below. The strong –12
sio2 are 1.5 × 10 F/cm and 4 × 10–
accumulation occurs at a point. 12
F/cm respectively. What is the oxide
thickness in MOS capacitor?

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A. 50nm B. 100nm 11. A MOS capacitor with p -type substrate

C. 20nm D. 10nm and n+ polysilicon gate has following data
7. Match the lists oxide thickness is 22 A 0, Na = 3* 10 ^17
atoms /cm3,
Nd = 10 ^20 atoms /cm3, ni = 1.45 *10
^10 / cm3, relative dielectric field of silicon
= 11.8, relative dielectric constant sio2 =
3.9, oxide layer contains 2* 10 ^10
positive ions /cm . Find the maximum
3

electric field of silicon and oxide

respectively in kV/cm
A. P-2, Q-3, R-4, S-1
A. 542,854 B. 285,562
B. P-3, Q-4, R-1, S-2
C. 285,854 D. 345,854
C. P-4, Q-1, R-2, S-3
12. In a P-Si type MOS structure the
D. P-1, Q-2, R-3, S-4
concentration of holes at a distance of x is
8. A MOS capacitor fabricated on a p-type
P(x) = cm2 cm3, the value of ni = 1.5 ×
semiconductor, strong inversion occurs
1010 cm–3 and doping concentration Na =
when,
1.8 × 1018 cm–3. Then find the value of
A. Surface potential is positive and equal to
potential at distance x i.e.
twice the Fermi potential ϕ(x) =_____________mV.
B. Surface potential is zero 13. Consider P-type silicon in MOS structure.
C. Surface potential is negative and equal The surface potential that result in
to Fermi potential maximum space charge width is –0.412 V.
D. All the above Then the semiconductor doping is ____ ×
9. Find the charge per unit area in depletion 1013/cm3
region for an ideal MOS capacitor on p- (Assume ni = 1.5 × 1010/cm3, T = 300°k)
type si with ϵr = 11.8 and Na = 1016 /cm3 14. The C.V. plot of a MOS capacitor is shown
A. 6 × 10 -7
C/cm 2 below.
B. -4.92 × 10-8 C/cm2
C. -6 × 10-7 C/m2
D. 4.82 × 10-5 C/cm2
10. For a n-channel transistor doping is done to
reduce threshold voltage from +1.1 V to
+0.5 V. Assume that the implanted donor
form a sheet of positive ions just below the
If ox = 0.36 × 10—12 F/m and si =1.04 ×
Si surface, if a beam current of 10 micro A
10—12 F/cm and thickness of oxide layer
is scanned over a 650 cm target area, the
2
is 0.16 × 10—3 cm then maximum value of
implant time will be ……. Sec. (oxide the width of depletion region will be
thickness is 100 μm ϵr (SiO2) = 3.9) ______ μm.

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15. Consider an MOS structure with n-type 0.8 V 1

silicon. A metal-semiconductor work 1.0 V 3
function difference of ϕms = – 0.35 V is 1.2 5
required. For an aluminium-silicon dioxide What is the value of the inversion carrier
junction, ϕ’m = 3.20 V and for a silicon- density for VG = 1.5 V & what is the
silicon dioxide junction x’ = 3.25 V and threshold voltage?
Eg = 1.11 eV. If the gate is aluminium, A. Inversion carrier density = 8 × 1011/cm2
then the silicon doping required to meet at VG = 15 V.
the specification is B. Inversion carrier density = 9 × 1011/cm2
A. 3.43 × 1014 cm–3 B. 2.28 × 1014cm–3 at VG = 1.5 V
C. 2.28 × 10 cm 4 –3
D. 3.43 × 10 cm 4 –3
C. threshold voltage Vth = 0.4 V
16. An N-channel MOSFET at T=300K with D. Threshold voltage Vth = 0.7 V
substrate doping of NA = 3 × 10 /cm and 16 3
19. Which of the following is/are correct
SiO2 thickness of 20nm. The change in A. In BJT, the input side controlling
threshold voltage due to an applied source parameter is base current (IB)
to body voltage VSB = 1V is _____V. B. In MOSFET, the input side controlling
(Assume parameter is Gate current (IG)
C. In BJT, the input side controlling

17. An ideal MOS capacitor has a p–type parameter is voltage across base and

substrate with a doping concentration of emitter (Vbe)

1016 cm–3 Boron atoms / cm3. If a positive D. In MOSFET, the input side controlling

DC gate voltage is applied, then the parameter is voltage across the gate and

maximum width of space charge region source (VGS)

that can exist in the substrate is ________ 20. An N-channel MOSFET at T=300K and with

μm. substrate doping given as 𝑁𝐴 = 3 × 1016 /

(Assume, εSi = 1.04 × 10–12 F /cm, kT/q = 26 𝑐𝑚3 and SiO2 thickness of 20nm. Then for

mV and ni = 1.5 × 1010 cm–3) 𝑉𝑆𝐵 = 1𝑉

MSQs: (Assume 𝑛𝑖 = 1.5 × 1010 , ∈𝑠𝑖 = 11.7 ∈0 , 𝑉𝑇 =

18. A voltage VG is applied across a MOS 26𝑚𝑉 )

capacitor with P type silicon substrate at T A. Surface potential is 0.35 𝑉

= 300 K. The following table gives how B. Body efficient coefficient is 0.192 𝑉 1/2

inversion carrier density is varying with C. Oxide capacitance is 5.17 × 10−7 𝐹/𝑐𝑚3

respect to gate voltage D. The change in threshold voltage is

Gate Voltage Inversion carrier 0.087𝑉

VG Density (in 1011/cm–2)

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ANSWER

1.B 2.A 3.D 4.A 5.A 6.B 7.D 8.A 9.C 10.(13.5)

11.C 12.(0.1349) 13.(4.319) 14.(9.24) 15.A 16.(0.087) 17.(0.302) 18.A,D 19.A,D 20.B,C,D

SOLUTION

1. (B) equal magnitude appears at

We have the dc charge distribution of an semiconductor-oxide interface. So, the
ideal MOS capacitor as shown below. In given charge distribution is not
the given distribution, negative dc state accumulation.
has been applied that places negative CASE 2: Depletion
charge on metal-interface. For p-type In depletion mode for n-type
semiconductor, if the negative charge semiconductor, a small amount of negative
appears appears at metal-oxide interface; charge appears at metal-oxide interface,
then the positive charge (holes) of equal due to which only the (positively) ionized
magnitude appears at semiconductor-oxide donors appear at semiconductor-oxide
interface to maintain a balance of charge. interface. So, the given charge distribution
This biasing is called accumulation. So, the is not depletion.
given charge distribution cannot occur in CASE 3: Inversion
p-type semiconductor. Hence, this is an n- In inversion mode for n-type
type semiconductor. semiconductor, a larger negative charge
appears at metal-oxide interface, due to
which the holes and (positively) ionized
donors appear at semiconductor-oxide
interface. The given charge distribution
shown a similar distribution. Hence, it
represents inversion mode of biasing.
Thus, the semiconductor is n-type and
Now, we check the mode of biasing for the
operating in inversion mode.
n-type semiconductor. We consider the
2. (A)
following cases:
The capacitance per unit area is given by
CASE 1: Accumulation
In accumulation mode for n-type 0x (3.9)(8.85)  10−14
Cox = =
tox 4  10−7
semiconductor, the positive charge
appears at metal-oxide interface, due to = 8.63 × 10–7F/cm2

which the negative charge (electrons) of

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So, the required area to obtain 1 pF 8. (A)

capacitance is

C 1  10−12
A= =
C 8.63  10−7

= 1.16 × 10–6 cm2

3. (D)

Hence from figure

For strong inversion
ϕs > 0, ϕs = 2 ϕF
9. (C)
Wm = maximum value of depletion width =

eF
2
qNa

Na
4. (A) F = VT 1n
ni
Potential developed ϕf= (KT/q) * ln(Na/ni)
1016
ni= 1.5 * 1010/cm3 = 0.0261n
1.5  1016
On substitution ϕf = 0.026 * ln
F = 0.347V
0 ^ 16
(1.5 * 10 ^ 10) Wm =
11.8  8.85  10−14  0.347
1.6  10−19  1016
= 0.347v
Wm = 3.01 × 10-5 cm
2  si  f
Width w = Now Qd = -q NAWm
qNa
=- 1.6 × 10-19 × 1016 × 3.01 × 10-5
= 0.301 μm.
Qd = - 4.82 × 10-8 C/cm2
5. (A)
10. Ans.
For p-type devices, accumulation (Cmax)
qFB
VT(new) = VT(old) +
occurs for negative VG and inversion (Cmin) Ci
occurs at positive V G. Hence, the Now
semiconductor component of the MOS-C is  r r
Ci = =
doped with p-type. d d
6. (B) 8.86  10−12  3.9
=
OX A 100  10−6
C0 =
TOX Ci = 3.453 × 10-7 F
From this, TOX = 100nm
 0.5 = 1.1 +
( −1.6  10 )  F
−19
B
7. (D) 3.453  10 −3

P-1, Q-2, R-3, S-4 ∴ FB = 1.3 × 10 12

/cm3

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Now current of 10-5 A scanned over 650 Therefore, putting all values in equation 1
cm2 area we get

10−5 C / m 0.4836 −(x)

  tc = 1.3  1012  1.6  10−19  1  1016 = 1.5  1010  e 0.026
650cm2
On solving the above equation, we get
∴ The implant time is t = 13.5 sec
⇒ ϕ(x) =0.1349 v
11. (C)
13. Ans.
for n+ polysilicon gate ϕfn= Vt
ln(Nd/ni)=0.587v
s = −2F
For p type subtrate ϕfp = Vt ln (Na /ni) =
0.438v S
 F =
−2
maximum electric field occurs when there
−0.412
is an onset of strong inversion. =
−2
surface potential is given as
 F = 0.206
ψsi = 2 * ϕ fp = 0.876v
N 
2  si  si Now, F = VT ln  A 
Maximum width = = 6.174 *  ni 
qNa

10^-6 cm T N 
0.206 = ln  A 
11600  ni 
Maximum electric field in silicon = Esi =
q(Na )(Wdmax ) 300  NA 
= 285 kV/cm  0.206 = ln  
si 11600  1.5  1010 

Let Maximum electric field in silicon oxide, NA

 e7.96 =
1.5  1010
= Eo
∴ NA = 4319.08 × 1010
ξ sio2 (Eo) = ξ si *(Esi)
∴ NA = 4.319 × 1013
Eo = 11.8 * 285 / 3.9 = 854 kV/cm.
14. Ans.
12. Ans.
Concentration of hole at x is given by the 0x 0.36  10−12
c0x = =
t0x 0.16  10−3
relation,
(
q F −(x) ) = 2.25 × 10–9 F/cm2 and area of channel
⇒ P(X) = nie KT …………..1 Cmax 9  10−12
=A= =
Where ϕF is given by, C0x 2.25  10−9

 Na  ∴ A = 4 × 10–3 cm2
F = KT ln  ,
 ni  Now,

 1.8  1018   C C 
F = 0.026  ln  A  ox min  = 3Pf
 1.5  1010   Cox + Cmin 
 
ϕF = 0.026 × 18.60  2.25  10−9  Cmin 
∴ 4  10−3   = 3  10−12
 2.25  10−3 + C 
ϕF = 0.4836 v  min 

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9 Cmin Body efficient coefficient

∴ −9
=3
2.25  10 + Cmin 2q si NA
=
Cox
∴ 2Cmin = 2.25 × 10–9
0.5
2  1.6  10−19  11.7  8.85  10−14  3  1016 
∴ Cmin = 1.125 nF =  
5.17  10−7
Now
= 0.192V1/2
S1
Cmin = Change in threshold voltage for VSB = 1V
Wd(max)
is:
−12
1.04  10 VT =   s + VSB − s  = 0.192[ 1.75 − 0.75]
∴ Wd(max) =  
1.125  10−3
⇒ ΔVT = 0.087V
= 0.924 × 10–3 cm
17. Ans.
= 9.24 × 104 cm
The Fermi potential
∴ Wd(max) = 9.24 μm.
kT N 
15. (A) tp = n a
q  ni 
The metal-semiconductor work function
difference is defined as 1016
= 0.026 n
1.5  10

 Eg 
ms = m −  x − fn  = 0.35 V
 2e 
 
The maximum space charge width,
Substituting the given values, we have
1/2
 4esitp 
–0.35 = 3.20 – (3.25 + 0.56 – ϕfn) Xd(max) = 
 eNa 
Or ϕfn = 0.26 V
1/2
We may also express ϕfn as  4  1.04  10−12  0.35 
= −19  cm
N   1.6  10  1016 
fn = Vt ln  d 
 ni  = 3.02 × 10–5 cm
So, xd(max) = 0.302μm
 Nd  18. Ans. A & Dare correct
0.26 = 0.0259 ln  10 
 1.5  10  Sol. The inversion charge density is given
Hence, Nd =3.43 × 1014 cm–3 is given by
16. Ans. Qi ∝ (VG – VTh)
(0.084, 0.090) Given that
NA 1  1011 0.8 − Vth
s = 2VT ln =
ni 3  1011 1.0 − vth
 3  1016 
= 2  26mV  ln  = 0.75V 1 – Vth = 2.4 – 3Vth
 1.5  1010 
 
2Vth = 1.4
−14
ox 11.7  8.85  10
Cox = = Vth = 0.7
tox 20  10−7
= 5.17  10−7 F / cm3

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Qi at vG = 1.5 1.5 − 0.7  ∈𝑜𝑥 11.7 × 8.85 × 10−14

= 
𝐶𝑜𝑥 =
𝑡𝑜𝑥
=
20 × 10−7
QiatvG = 1.0 1.0 − 0.7 
= 5.17 × 10−7 𝐹/𝑐𝑚3
Qi 0.8
4
= Body efficient coefficient is given by:
3  10 0.3
√2𝑞 ∈𝑠𝑖 𝑁𝐴
Qi = 8 x 1011 𝛾=
𝐶𝑜𝑥

19. Ans. A, D are correct [2 × 1.6 × 10−19 × 11.7 × 8.85 × 10−14 × 3 × 1016 ]0.5
=
5.17 × 10−7
BJT is current controlling device & MOSFET
⇒ 𝛾 = 0.192 𝑉 1/2
is voltage controlling device
Change in threshold voltage for 𝑉𝑆𝐵 = 1𝑉
is:
20. Ans: B, C, D
∆𝑉𝑇 = 𝛾[√∅𝑠 + 𝑉𝑆𝐵 − √∅𝑠 ]
Sol.
𝑁𝐴 3×1016
= 0.192[√1.75 − √0.75]
∅𝑠 = 2𝑉𝑇 𝑙𝑛 = 2 × 26𝑚𝑉 × ln ( )=
𝑛𝑖 1.5×1010 ∆𝑉𝑇 = 0.087 𝑉
0.75𝑉



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Chapter

7 MOSFET

1. For the MOSFET circuit shown VT = 1V, λ =

W
0, ncox = 0.35mA / v2 . Then output
L
voltage will be,

The N – MOS transistor is constructed such

n COx w
that = K = 1 mA/v2, the threshold
L
voltage VT is 1.5V and then value of drain
to substrate voltage is ______________ V.
5. The resistance of MOSFET in linear region
is found to be 1.2 KΩ at depletion width of
A. 3.24 B. –4.09 0.4 μm. then Find the resistance (in KΩ) at
C. 4.09 D. –3.24 a depletion width of 0.9 μm.

2. The parameters of an n-channel MOSFET 6. For the NMOS circuit shown below VT = 1V,

are μn = 650 cm2/V-s; tox = 200 Å; W/L = w1

L1 = 1μm, L2 = 2μm then the ratio is
w2
50 and VT = 0.4 V. If the transistor is
biased in saturation region, the drain equal to

current (in mA) for VGS = 2V is …………

3. If a n-channel MOSFET is operating under
saturation region with
nCox W
= 1mA / V2 ,  = 0.01V −1 and ID =
L
0.85 mA then intrinsic gain of MOSFET will
be ________.
4. Consider an N – MOS transistor as shown
in circuit below :-

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A. 2 B. 4 10. If MOSFET is operating in saturation region

C. 0.5 D. 0.25 and drain current is 1.2 mA when Vgs = 1
7. For the N–channel depletion mode V and 4 mA when Vgs = 1.6 V. Calculate
MOSFET, in circuit shown below, V TN = –2 the threshold voltage VT.
K 'N  W  11. An NMOS has μn = 600 cm2/V-sec,
V and KN = = 0.1 mA/V2. Assume
2  L  VT=0.6V, tox = 180A° If NMOS is operating
that VDD = 5V and RS = 5 Kiloohms. Then in saturation with VGS = 5.2 V. To get the
the value of VDS (drain to source voltage) current of saturation flowing through the
is? MOS equal to 5mA, the required W/L will
be?
12. In a particular application, an n-channel
MOSFET operates with VSB in the range of
3V to 5V. If VTNO is 2V. Find the range for
VTN
1
(Given  = 0.6 2 ,2 f = 0.8V )

A. 1V to 1.9V B. 1.63V to 2.9V

C. 1.9V to 2.9V D. 2.93V to 2.90V

A. 1 V B. 2 V 13. The n-channel EMOSFETs T1 and T2 are

C. 3 V D. 4 V connected as shown below. Both the

8. Consider an n-channel MOSFET having MOSFETs are identical except that, the

width W, length L, electron mobility in the channel width of T2 is W2 and that of T1 is

channel W1

µn and oxide capacitance per unit area Cox.

If gate-to-source voltage VGS=0.7V, drain-
to- source voltage VDS=0.1V, ( µnCox) =100
µA/V2, threshold voltage VTH=0.3V and
(W/L) =50, then the transconductance
gm (in mA/V) is______
9. The voltage drop across the interface of a
MOSFET is 11.12 V, the voltage across the If the threshold voltage of T1 and T2 are
depletion region is 4.5 V and the voltage 1.5 V, then the relation between W1 and
required to achieve the flat band condition W2 to get the value of Vo = 2.33 v.
is 10.46 V. What must be the Threshold (Assume all non-ideal effects are
voltage ? negligible)
A. 50.50 V B. 76.09 V A. W1 = 2W2 B. W1/2 = W2
C. 26.08 V D. 45.01 V C. W1 = W2 D. W1 = W2/2

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14. A MOSFET in saturation mode has a drain 17. The drain of an n–channel MOSFET is
current of 1 mA for VDS = 0.6 V. If the shorted to the gate. The threshold voltage
channel length modulation parameter = (VT) of MOSFET is 1 V. If the drain current
0.4 V–1, then the value of VDS for the drain ID is 1 mA for VGS = 2V, then for VGS = 3V,
current of 3 mA will be ___________ V. the drain current ID will be ____________
15. For an n-channel E-MOSFET used in the mA.
circuit shown below, the threshold voltage 18. An n–channel EMOSFET operating in
VT = 1 V, the channel length modulation saturation region has threshold voltage
W Vth = 1 V, gate oxide capacitance, Cox = 4
parameter λ = 0 and nCox = 0.3mA / V2
L × 10–8 F/cm2 ,mobility of electrons μ n =
Then the output voltage Vo is. 1250 cm2 /V–sec, channel width W = 20
μm and channel length modulation
parameter l = If the drain current ID = 1
mA for VGS = 3 V, then the channel length
of the MOSFET will be _________ μm.
19. Consider the circuit shown in figure and
each of the given transistors have the
following parameters
VTN = 0.8V, kn (μn Cox ) = 30 μA/ V2
16. Find W1/W2 for the circuit shown in figure if
Vt = 1V, μncox = 120 μA/V2, λ = 0 and
L1 and L2 = 1 μm.

If the ratios of width to length i.e.

W W
 L  = 40,  L  = 15 , then V0 is
 1  2

______(Volts)

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ANSWER

1.C 2.(7.19) 3.(153.41) 4.(9.5) 5.(0.53) 6.C 7.C 8.(0.5) 9. C 10.(0.273)

11.(4.109) 12.D 13.D 14.(6.8) 15.(3.35) 16.(4) 17. (4) 18. (2) 19.(2.9)

SOLUTION

1. (C) 3. Ans.

VT = 1V, 2nC0X W
gm =  ID
W L
ncox = 0.35mA / V2
L
= 2  1  10−3  0.85  10−3
Now
5 − v0 gm = 1.304 mV
lo =
2
Now,
ncox W
And I0 = ID = 2  L  ( VGS − VT )
2
1 1
r0 = =
I0 0.01  0.85  10−3
5 − V0 1
=  0.35  ( V0 − 1)
2

2 2 ∴ r0 = 117.64 KΩ

5 – Vo = 0.35 × (Vo – 1)2 and intrinsic gain A0 = gmr0

 5 − V0 = 0.35V02 − 2  0.35  V0 + 0.35 = 1.304 × 117.64

 0.35V02 − 0.3V0 − 4.65 = 0 ∴ A0 = 153.41

4. Ans.
 V01 = 4.09V, V02 = −3.24V
Assume the N–MOS transistor to be in
But Vo can’t be negative
saturation region:
∴ Vo = 4.09 V
1 w
2. Ans. Drain current ID = n cos (VGS – VT)2
2 L
3.9  8.85  10−14 By solving above equation, we will get
Cox = εox/ tox = = 1.73 ×
200  10−8
VGS – VT = ± 2
10-7 F/cm2
= 3.5, – 0.5
1 W
ID =   nCox ( VGS − Vth )
2
∵ VGS > VT, so, VGS = 3.5V
2 L 
50 VG – VS = 3.5
=  650  1.73  10−7 (2 − 0.4)2
2
O – VS = 3.5V
On solving we get
Vs = −3.5 V
ID = 7.19 mA
VDS = VD – VS = 6 – (–3.5) = 9.5V

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5. Ans. VDS = VDD – ID RS

The Drain ON resistance of MOSFET is = 5 – 0.4 × 10–3 × 5 × 103
given as =5–2
1 =3V
⇒ RON =
W
0C0x  L   VGS − VT  VDS (sat) = VGS – VTN = 0 – (– 2) = 2V
 
Since, VDS > VDS(sat) the MOSFET is biased
Therefore,
in saturation region.
R W
⇒ ON1 = 2 8. Ans.
R ON2 W1
Here, VDS<VGS -VPH, so n-channel MOSFET
On substituting the value we get,
is working in linear region.
1.2 0.9
⇒ =
R ON2 0.4 W V2 
ID = nCox ( VGS − VTH )  VDS − DS 
⇒ Hence, L  2 

⇒ RON2 = 0.53 KΩ
So, transconductance gin is in linear region
6. (C)
and is given by
Since for both NMOS, drain and gate are
connected both will be operating in
ID
gm =
VGS
saturation region. VDS − const

∴ ID1 = ID2 W
= ( nCox ) V = 100  10−6  50  0.1
nCOX W1 nCOX W2 L DS
( ) ( )
2 2
∴  V − VT =   VGS2 VT
2 L1 GS1 2 W1
= 5  10−4 = 0.5mA / V

( )
2
W L VGS2 − VT 9. (C)
∴ 1 = 1 
( )
W2 L2 2
VGS1 − VT VG = Vi + ϕs + VFB
= 11.12 + 4.5 +10.46
1 (2 − 1)2
=  = 26.08 V
2 (2 − 1)2
10. Ans.
W 1
∴ 1 = ID = Kn(VGS – VT)2
W2 2

(V )
2
7. (C) ID1 GS1 − VT
=
(V )
ID2 2
Let us assume that MOSFET is biased in − VT
GS2
the saturation region.
(1 − VT )
2
Then the drain current is, 1.2
=
(1.6 − VT )
4 2
ID = kN (VGS – VTN)2
But for N–channel depletion mode
1 − VT
MOSFET, For VGS = 0V, = 0.5477
1.6 − VT
ID = kN (VTN)2
1 – VT = 0.8763 – 0.5477 VT
= 0.1 × 10–3 (–2)2
0.1236 = 0.4523 VT
= 0.4 mA
VT = 0.273V.
The drain to source voltage ‘VDS’ is

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11. Ans. 14. Ans.

nCox W Given,
 ( VGS − VT )
2
ID = 
2 L
Drain current ID = 1 mA
  W
 ( VGS − VT )
2
ID = n ox  VDS = 0.6 V
2  t x L
Whereas, channel length parameter,
−3 600  34.5  10−14 W
5  10 =   (5.2 − 0.6)2
2  180  10−8 L λ = 0.4 V–1

W We know that,
 = 4.1094
L Drain current in saturation mode is ID α
12. (D) (1+ λ VDS),
VTh = VTNO +   VSB + 2f − 2f 
  ID1 1 + VDS1
Hence, =
VSB = 3V− to− 5V ID2 1 + VDS2
VTHO = 0.2V
1
Given, ID2 = 3 mA
= 0.6V 2 1 1 + 0.4  0.6
=
2f = 0.8V 3 1 + 0.4  VDS2
For VSB = 3V On solving above equation, we get VDS2 =
VTh = 2 + 0.6[ 3 + 0.8 − 0.8] 6.8 V
VTh = 2.63V
15. Ans.
For VSB = 5V
As drain ad source are connected together
VTh = 2 + 0.6[ 5 + 0.8 − 0.8]
the MOSFET is in saturation region,
VTh = 2.9V
5 − V0
13. (D) Drain current, ID = …..(1)
2K
As drain is connected to gate for both
But
MOSFETs, they will be in saturation mode
1 W 2
of operation. IDS =  C  V − VTH  ……. (2)
2 n ox L  GS
i.e. ID1 = ID2
On equating equation 1 and 2 we get
K1(VGS1 – VT)2 = K2(VGS2 – VT)2
5 − V0 1
VGS1 = 5 – Vo 
2K
=
2
( )
0.3  10−3  VGS − 1
2

VGS2 = Vo
Therefore, Since, VGS = Vo
K1(5 – Vo –VT)2 = K2(V0 – VT)2 ⇒ 5 − Vo = 0.3[Vo − 1]2
On substituting the given value in above
⇒ 5 − Vo = 0.3  Vo2 − 2Vo + 1
equation we get,  
K1 = 0.5 K2 On solving above equation we get,
Where we know that
−4  580
KαW Vo =
6
Therefore,
On taking only positive value,
W2
W1 = Vo = 3.35ν
2
16. Ans.

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VGS1 = 1.5V 1mA = kn [(2 – 1)2]

And ID = ID1 = ID2 = 120 μA kn = 10–3 A/v2
ncox W1 For VGS = 3V, the drain current is
( )
2
ID1 =  V − Vt
2 L1 GS1 ID = kn [(VGS – VT)2]

120  10−6 W1 = 10
–3
[(3 – 1)2] A
 120  106 =   (1.5 − 1)2
2 1  10−6 = 4 mA
…(i) 18. Ans.
nCOX W2
( )
2
& ID2 =  V − Vt Process trans conductance parameter, kn =
2 L2 GS2
μnCox
−6
120  10 W2 Device trans conductance parameter,
 120  10−6 =  −6
(3.5 − 1.5 − 1)2
2 1  10
kn  W 
…(ii) kn =
2  L 
Diving eq. (i) by (ii)
1 W
W (0.5)2 So, kn = nCox  
1= 1  2 L 
W2 (1.5)2
W
W (1)2 =1/2 × 1250 × 4 × 10–8 ×   A/V2
 1 = L 
W2 (0.5)2
W
W = 0.025   mA/ V2
1  
 1 =
W2 0.25
Drain current,
W
 1 =4 kn(VGS – Vth)2 = 1 mA
W2
W
17. Ans. 0.025   (3 –1)2 = 1
L 
The figure look like as shown below :
L = (0.025) (4) W
= (0.1) (20) μm
= 2 μm
19. Ans.
Since gate and drain of both the transistors
are shorted ⇒ both are in saturation
Since both are in series ⇒ same current
flows
MOSFET works in saturation region, when i.e. ID1 = ID2
drain and gate terminals are shorted. The 1 W
( V − VT )
2
 k
drain current equation in MOSFET is, 2 n  L 1 GS1
ID = kn [(VGS – VT)2] 1 W
( V − VT )
2
= k
2 n  L 2 GS2
Given that VT = 1V

40 (5 − V0 − 0.8 ) = 15 ( V0 − 0.8 )
2 2
For VGS = 2V,
ID = 1mA,

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If V0 =2.9V both transistors remains in

( 4.2 − V0 )
2
3
=
saturation
( V0 − 0.8)
2 8
Case (ii):
4.2 − V0 3
= 4.2 − V0 3
V0 − 0.8 8 =−
V0 − 0.8 8
Case (i):
By solving we get V0 =9.57V
4.2 − V0 3
=+ But if V0 =9.57V, transistor M1 will no
V0 − 0.8 8
more in saturation
By solving we get V0 =2.9V
Hence V0 =2.9V



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Chapter

8 Special Diodes

1. Group I lists four types of p-n junction A. decreases B. increases

diodes. C. remains same D. none
Match each device in Group I with one of 5. Find the maximum realizable power (in
the options in Group II to indicate the bias mW) of solar cell if the open circuit voltage
condition of that device in its normal mode is 4.3 v and short circuit current is 2 mA
of operation. and fill factor is 0.7.
Group-I Group-II 6. Photo Diode works on the principle of
(P) Zener Diode (1) Forward bias A. Photo conductive effect
(Q) Solar cell (2) Reverse bias B. Photo resistive effect

(R) Laser diode C. Tunneling effect

(S) Avalanche Photodiode D. Electro Luminescence

7. Match List-I (Device) with List-II

A. P-1, Q-2, R-1, S-2 (Application) and select the correct answer

B. P-2, Q-1, R-1, S-2 using the code given below the lists:

C. P-2, Q-2, R-1, S-1 List-I

D. P-2, Q-1, R-2, S-2 A) Hall element

2. A photodiode with an energy bandgap E g = B) Varactor diode

1.42 eV is exposed to the light of C) SCR

wavelength 0.8 µm and power density of D) Schottky barrier Diode

400 W/m2. If the photo diode has area of List-II

150 cm2, then short circuit current of the 1) Power control

diode is _____A. 2) Microwave mixer

(Assume quantum efficiency is 100%) 3) Tuning element in Tank circuit

A. 0 B. 2.434 4) Sensor

C. 3.878 D. 3.33 A. A-2; B-3; C-1; D-4

3. What should be incident optical power (in B. A-4; B-1; C-3; D-2

μW) so that responsivity = 2 A/w and C. A-2; B-1; C-3; D-4

generated photocurrent is 5μA. D. A-4; B-3; C-1; D-2

4. If the temperature of LED increases, then 8. For a given quantum efficiency in a light

the output radiant power will detector, responsivity vs wavelength

relation is related as

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the value of R = 0.1 Ω then the luminous

intensity of the LED will be:

A.

B. A. 0.48 mcd B. 0.96 mcd

C. 0.24 mcd D. 1.92 mcd
11. ‘Hot carrier diode’ is known as
A. Schottky diode B. PIN diode
C. photo diode D. LCD
12. Which is the diode used for measuring light
C. intensity?
A. Junction diode B. Varactor diode
C. Tunnel diode D. Photo diode
13. For two p n junction diode’s D1 and D2 are
+

connected to ideal voltage source. If NA1 =

2NA2, ND1 = 2ND2 then VD2 – VD1
D.
=_________Volts

9. In the circuit shown below, the diode (LED)

has a cut in voltage of 1V and some non-
zero internal resistance. If the current
14. In the circuit shown LED is Fabricated from
through the LED is 5mA , then power in
a direct bandgap material having Eg =
mW dissipated in the LED is__________
2.5ev. If Forward voltage drop of LED is 2V
and conversion efficiency is 20 percent.
Calculate the number of photons emitted
per second.

10. If the forward voltage drop across the LED

shown below is VD = 1.6V and the
luminous intensity (IV) varies according to
the relation IV = 40ID mcd (millicandela). If

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A. 10^10 B. 2.5*10^16
C. 10^16 D. 2.5*10^10
15. If the efficiency of a photodiode (photo
detector) is 100% for the incident light
with 50 μm wavelength. Then the
responsivity of photo detector in [A/W]
is______
16. In a photo diode, the width of the A. 32 B. 24

depletion layer W is 1 mm, generation rate C. 28 D. 21

of excess carriers is 1020 cm–3 sec–1. The 20. If the efficiency of photo diode (photo

diffusion length of electrons and holes are detector) is 100% for the incident light

20 mm and 10 mm respectively. Then the with 50μm wavelength. Then the

steady state photo current density of the responsivity of photo detector in [A/W] is

photo diode is __ _____

17. The values of voltage (VD) across a tunnel- A. 40.32 A/W B. 38.32 A/W

diode corresponding to peak and valley C. 30.38 A/W D. 28.32 A/W

currents are VP and VV respectively. The 21. A photo -detector circuit shown in figure.

range of tunnel-diode voltage VD for which The photo-diode has an active area of

the slope of its I – VD characteristics is 10+2 cm2 and sensitivity of 0.55 A/W.

negative would be When light of intensity 10mW/cm2 falls on

A. VD< 0 B. 0 ≤ VD< VP the photo-diode, the output voltage VO is

C. VP ≤ VD< VV D. VP ≥ VD ___ volt.

18. Determine temperature coefficient of 5V

Zener diode (rated 25°C value). If the
nominal voltage drops to 4.8V at
temperature of 100°C ______________
mv/°C
19. The figure shows the I-V characteristics of
a solar cell illuminated uniformly with solar
light of power 100 mW/cm2. The solar cell MSQs:
has an area of 3 cm2 and a fill factor of 22. In a tunnel diode, which of the following
0.7. The maximum efficiency (in %) of the is/are true.
device is ______. A. Fermi level in P-side of tunnel diode is
inside of valency band
B. Fermi level in P-side of tunnel diode is
out side of valency band

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C. Fermi level in N-side of tunnel diode is

above the conduction band
D. Fermi level in N-side of tunnel diode is
below the conduction band.
23. There are 5 solar cells A, B, C, D, E here
equal a short-circuit current and an open
A. For 𝑟𝑍 = 30 Ω, the value of 𝑉𝑍 = 10.7 𝑉
circuit voltage. The fill factors of solar cell
B. For 𝑟𝑍 = 0 Ω, the value of 𝑅𝑠 = 180.6 Ω
are in the ratio 1: 2 : 3 : 4 : 5.
C. For 𝑟𝑍 = 30 Ω, the value of 𝑉𝑍 = 11.1 𝑉
Then which of the following μ/are correct?
D. For 𝑟𝑍 = 0 Ω, the value of 𝑅𝑠 = 130.4 Ω
A. The maximum power can be delivered
25. 8 × 106 Photons are incident on an InGaAs
to a load by A cell
PIN photo detector which has a quantum
B. The maximum power can be delivered
efficiency of 86% and energy band gap
to a load by E cell
of 1.47 𝑒𝑉. Then
C. The power delivered by C cell is more
A. Number of EHP generated is 6.86 × 106
than by B cell
B. Maximum wavelength that can generate
D. The power delivered by C cell is more
current is 0.8435 𝜇𝑚
than by D
C. Maximum wavelength that can generate
24. In the Zener diode regulator circuit,
current is 0.6245 𝜇𝑚
assume that 𝑉𝐿 = 12𝑉 at 𝐼𝑍 = 30𝑚𝐴.
D. Number of EHP generated is 8 × 106

ANSWER

1.B 2.C 3. (2.5) 4. A 5. (6.02) 6. A 7. D 8. B 9.(12.5) 10. B

11.A 12.D 13.(33.33) 14. C 15.(40.32) 16.(49.60) 17. C 18.(- 19. D 20. A
2.67)

21.(- 22.A,C 23.B,C 24.C,D 25.A,B

13.75)

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SOLUTION

1. (B) 4. (A)

Zener diode → Operates In reverse bias Higher ambient temperature leads to

Solar cell → Operates in forward bias higher junction temperature which can

Laser diode → Operates in very high increases the degradation rate of LED

voltage forward bias to give population junction and possibly decreases the light

inversion. intensity at the output

Photo diode → Operates in reverse bias in 5. Ans.

avalanche region. We know that,

2. (C) ⇒ Fill Factor =

We know that VmIm Maximum realizable power

=
VOCISC Extreme value
1.24
Eg(max) =
(m) Pmax
⇒ 0.7 =
4.3  2  10−3
1.24
=
0.8 ⇒ Pmax = 6.02 mW

Eg(max) = 1.55 ev 6. (A)

But the given diode has Eg <Eg(max) so 7. (D)

photoconductive effect will take place 8. (B)

responsivity = Ip*h / Poutput
P
Now  =
hc Efficiency of light detector is given as =

And Is = q  A η = (Ip* h * f) / (Popt * q)

qp    A q
= R=
hc hc

By above equation, responsivity vs

1.6  10−19  400  0.8  10−6  150  10−4
=
6.6  10−34  3  108 wavelength relation is related as shown
.this plot is called as spectral response of
IS = 3.878 A
photo detector.
3. Ans.

The responsivity is given by

generated photocurrent
⇒ R=
incident optical power

5A
⇒ 2 A/W =
Pincident

⇒ Pincident = 2.5 μW

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9. Ans. Photodiodes usually have a slower

response time as their surface area
increases. The common, traditional solar
cell used to generate electric solar power is
a large area photodiode.
Photodiodes are often used for accurate
measurement of light intensity in science
6 −1 and industry. They generally have a more
5  10−3 =
700 + r linear response than photoconductors.
700 + r = 1000 13. Ans.
⇒ r = 300Ω Since given varactor diodes are reversed
PLED = I r + (VI)
2
biased,
= (25*10 *0.3k) + (1*5)
–6
q  A2ND  A 
= 7.5mW + 5mW = 12.5 mW CT =  C T = & NA  ND 
2  Vbi + VR   wR 
10. (B)
ND
We can see that LED is forward biased  CT 
Vbi + VR
∴ Applying KVL
–4 + RID + VD = 0 CT1 ND1 VR2 ND1 VD2
=  = 
CT2 ND2 VR1 ND2 VD1
∴ –4 + 0.1 × ID + 1.6 = 0
∴ ID = 24 mA
Now luminous intensity is varying as IV =
40ID
∴ IV = 40 × 24 × 10–3
∴ IV = 0.96 mcd And as

11. (A) 1 V ND1 VD2 V

CT   D2 =  = 2  D2
Schottky diode is also called as hot carrier VD VD1 ND2 VD1 VD1

diode because it has function of ∴ VD2 = 2VD1

temperature dropping characteristics. From KCL, VD1 + VD2 = 100
12. (D) By simplification
A photodiode is a semiconductor device VD1 = 33.33V
that converts light into an electrical VD2 = 66.66V
current. The current is generated when VD2 – VD1 = 33.33V
photons are absorbed in the photodiode. A 14. (C)
small amount of current is also produced sol. current in the circuit is 10mA .
when no light is present. Photodiodes may Efficiency = output power/ input power =
contain optical filters, built-in lenses, and 20/100=0.2
may have large or small surface areas. 0.2 = Po /Pin=Po/(Vd *I)

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==> Po/2*10m 18. Ans.

==> 0.2*2*10-2 =Po =4mW = total At 25°C VZ1 = 5V
energy released At 100°C VZ2 = 4.8V
released photons have energy = 2.5ev
Number of photons released per sec =
Temperature coefficient 5 − 4.8
(4*10-3) / (2.5*1.6* 10-19)  =
of zener diode 25 − 100
=10^16. = −2.67 mv/oC
15. Ans.
19. (D)
Efficiency η
FF  VocIsc 0.7  0.5  180
Ip Efficiency = =  100%
Pin (100  3)
q
= = 21%
Popt
hf
20. (A)
I  hf 
= P   Ip / q
Popt  q  efficiency,  =
Popt / hf
 hc  1 [m]
=R   =R
 q  1.24 IP  hf 
=
Popt  q 
Since η =100%
 50   hc  1 [m]
R = 1  = 40.32A / W =R   =R
1.24  q 1.24

16. Ans. Since, η = 100%

Given, Ln = 20 mm  50 
 R = 1  = 40.31 A/W
Lp = 10 mm 1.24 
W = 1 mm
21. Ans.
G = 1020 cm–3 sec–1
The photo diode current is
For photo diode, the steady state photo
I = light intensity x sensitivity x Area
current density is
= 10 x 10-3 x 0.55 x 102 x 10-4
J = q [W + Ln + Lp]G
= 0.55 x 10-4 A
= 1.6 × 10–19 [10–4 + 1 × 10–3+ 2 × 10–3]
Hence Vo1 = (-100k) x I = -5.5 volt
1020 A/cm2
J = 49.60 mA / cm2 Now for 2nd op-amp,

17. (C) Current through 20 kΩ resistor is

l-V characteristics of the tunnel diode is V+ V −5.5

Izok = = 01 =
R R 20
= - 0.275 mA
Hence Vo = I zok xR
= ( - 0.275)m x (30 + 20) k
= - 13.75 volt
Hence VP ≤ VD < VV

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22. Ans. A, C are correct 𝑉𝐿 12

𝐼𝐿 = = = 16𝑚𝐴
𝑅𝐿 0.75𝐾Ω
Sol. In the tunnel diode the P & N side are
⇒ 𝑉𝐿 = 12𝑉 = 𝑉𝑍 + 𝐼𝑍 𝑟𝑍
heavily doped
12 = 𝑉𝑍 + 30𝑚𝐴 × 30
So, Fermi levels are inside the valency
⇒ 𝑉𝑍 = 11.1𝑉
band and above the conduction band For
For 𝑟𝑍 = 0 Ω, 𝑉𝐿 = 𝑉𝑍 = 12 𝑉
p-type & N-type respectively.
𝑉𝐿 12
23. Ans. B, C are correct 𝐼𝐿 = = = 16𝑚𝐴
𝑅𝐿 0.75𝐾Ω
VmIm ⇒ 𝐼 = 𝐼𝑍 + 𝐼𝐿 = 30 + 16 = 46 𝑚𝐴
Sol.: Fill factor(FF) =
VOCISC 18 − 12
⇒ 𝑅𝑠 = = 130.4 Ω
Maximum power load = VmIm = Pm 46
25. Ans: A, B
Pm = (F ⋅ F)(VOC ⋅ ISC)
Sol.
For five cell VOC S & ISC S & ISC is are same
Quantum efficiency is given by:
Given (FF)E > (FF)D > (FF)C > (FF)B > (FF)A
𝑁𝑜. 𝑜𝑓 𝐸𝐻𝑃 𝑔𝑒𝑛𝑒𝑟𝑎𝑡𝑒𝑑
⇒ (Pm)E > (Pm)D > (Pm)c > (Pm)B > (Pm)A 𝜂=
𝑁𝑜. 𝑜𝑓 𝑝ℎ𝑜𝑡𝑜𝑛𝑠 𝑖𝑛𝑐𝑖𝑑𝑒𝑛𝑡
24. Ans: C, D 𝑁𝑜. 𝑜𝑓 𝐸𝐻𝑃 𝑔𝑒𝑛𝑒𝑟𝑎𝑡𝑒𝑑
⇒ 0.86 =
Sol. 8 × 106
For 𝑟𝑍 = 0 Ω, the circuit can be redrawn as 𝑁𝑜. 𝑜𝑓 𝐸𝐻𝑃 𝑔𝑒𝑛𝑒𝑟𝑎𝑡𝑒𝑑 = 6.86 × 106

below:
We know that:
1.24
𝐸𝐺 ≤
𝜆(𝑖𝑛 𝜇𝑚)
1.24
⇒ 1.47 ≤
𝜆
⇒ 𝜆 ≤ 0.8435 𝜇𝑚
So, the maximum wavelength that can
Given 𝐼𝑍 = 30𝑚𝐴
generate current is 0.8435 𝜇𝑚.
𝑉𝐿 = 12𝑉 = 𝐼𝐿 𝑅𝐿



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Chapter

9 Device Technology

1. The p-type epitaxial layer grown over an n- 4. Why does mobility of electrons in a
type substrate for fabricating a bipolar semiconductor decrease with increasing
transistor will funct1on as donor density?
A. The collector of a p-n-p transistor A. Doping increase the effective mass of

B. The base of an n-p-n transistor electrons.

C. The emitter of a p-n-p transistor B. Doping decrease relaxation time of

D. The collector contact for a p-n- electrons.

p transistor C. Electrons are trapped by donors.

2. Why is silicon dioxide (Si02) layer used in D. More holes are generated so that the
effective mobility decreases.
ICs?
5. Why SiO2 layer is used in ICs?
A. To protect the surface of the chip from
A. To protect the surface of chip from
external contaminants and to allow for
external contaminants and to allow for
selective formation of then and p regions
selective formation of the N and P regions
by diffusion
by diffusion.
B. Because it facilitates the penetration of
B. Because it facilitates the penetration of
the desired impurity by diffusion
the desired impurity by diffusion.
C. To control the concentration of the
C. To control the concentration of diffused
diffused impurities
impurities.
D. Because of its high heat conduction
D. Because of its high heat conduction.
3. Why is the term ‘planer technology’ for
6. The biasing of an IC BJT is done by the
fabrication of devices in ICs used?
following biasing scheme:
A. The variety of manufacturing processes A. Potential-divider biasing scheme
by which devices are fabricated, takes B. Fixed biasing scheme
place through a single plane C. Current mirror biasing scheme
B. The aluminium contacts to the collector, D. Collector to base feedback biasing
base, and emitter regions of the transistors scheme
in the ICs are laid in the same plane 7. Statement (I): Concentration of acceptor
C. The collector, base, and emitter regions atoms in the region between isolation
of the transistors in ICs are laid in the islands m a monolithic integrated circuit
same plane will be much higher than in the p-type
D. The device looks like a thin plane wafer substrate.

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Statement (II): The higher density is List-I

provided to prevent the depletion region of A) Reverse bias p-n junction isolation
the reverse biased isolation to substrate B) Resistive isolation using the bulk
junction from extending into the p+-type resistivity of the layer
material. C) Native oxide isolation
A. Both Statement (I) and Statement (II) D) Oxide (other than native isolation)
are individually true, and Statement (II) is List-II
the correct explanation of Statement (I). 1) Requires large area of the wafer,
B. Both Statement (I) and Statement (II) thereby increasing the IC size
are individually true but Statement (II) is 2) Best choice for silicon ICs with low
not the correct explanation of Statement parasitic capacitance
(I). 3) Suitable for ICs of III-V semiconductors
C. Statement (I) is true but Statement (II) 4) Introduces bias-dependent parasitic
is false. capacitance
D. Statement (I) is false but Statement A. A-4; B-1; C-2; D-3
(II) is true. B. A-2; B-3; C-4; D-1
8. Which of the following capacitors are made C. A-4; B-3; C-2; D-1
use of widely for a capacitance application D. A-2; B-1; C-4; D-3
in monolithic ICs. 10. Extraction determines the capacitance &
1) MOS capacitor resistance of interconnections in VLSI
2) Collector Substrate capacitor design.
3) Collector-Base capacitor A. Behavioral B. Gate level
4) Base -Emitter capacitor C. Switch level D. Transistor level
Select the correct answer using the code 11. Consider the following functions?
given below: A. To mark against diffusion or ion implant.
A. 1 and 2 only B. 2 and 3 only B. To facilitate entry of dopants
C. 3 and 4 only D. 1 and 4 only C. To provide low resistivity paths.
9. Match List-I (Isolation Technique in IC) D. To act as a component in MOS device.
with List-II (Related Characteristic) and The function of an oxide layer on silicon
select the correct answer using the codes wafer would include:
given below the lists:

ANSWER

1. A 2. A 3. A 4. B 5. A 6. C 7.A 8. A 9. A 10. B

11.A,D

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SOLUTION

1. (A) Since concentration of acceptor atoms is

The p-type epitaxial layer grown over an n- higher hence depletion region will not
type substrate functions as the collector of extend more into the p+ substrate.
p-n-p transistor. 8. (A)
2. (A) 9. (A)
3. (A)
10. (B)
4. (B)
Gate level
5. (A)
11. Ans: A, D
SiO2 layer is used in ICs to protect the
1. Oxide layer in silicon is used mainly for
surface of chip from external contaminants
isolation purpose.
and to allow for selective formation of the
N and P regions by diffusion. It will oppose the entry of dopants into the

6. (C) substrate by providing very high resistive

To reduce fabrication space current mirror paths.

biasing scheme is used in an IC BJT. It is used as a mask or as layer between
7. (A) substrate and diffusion impurities.
1
Width 
Doping concentration

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