5th Unit Ofc Mwoc
5th Unit Ofc Mwoc
Optical Sources
and Detectors:
[T1]Introduction,
[T2] LEDs – structure –
Light source, Quantum
efficiency, Modulation of an
LED,
[T1]Introduction ,
Optical Sources
Optical Detectors
Optical Sources
1. Optical transmitter coverts electrical input signal into
corresponding optical signal.
2. The optical signal is then launched into the fiber.
3. Optical source is the major component in an optical transmitter .
4. Popularly used optical transmitters are Light Emitting Diode
(LED) and semiconductor Laser Diodes (LD)
To be useful in an optical
link, a light source needs
the following
characteristics:
i. It must be possible
to operate the
device continuously
at a variety of
temperatures for
many years.
2. It must be possible to
modulate the light
output over a wide
range of modulating
frequencies. For fiber
links, the wavelength of
the output should
coincide with one of
transmission windows
for the fiber type used.
3. To couple large
amount of power into
an optical fiber, the
emitting area should be
small.
4. To reduce material
dispersion in an optical
fiber link, the output
spectrum should be
narrow.
5. The power requirement
for its operation must be
low.
6. The light source must be
compatible with the
modern solid state devices.
7. The optical output
power must be directly
modulated by varying
the input current to the
device.
8. Better linearity of
prevent harmonics and
intermodulation distortion.
9. High coupling
efficiency.
10. High optical output
power.
11. High reliability.
12. Low weight and low
cost.
Two types of light
sources used in fiber
optics are light emitting
diodes (LEDs) and
laser diodes (LDs).
[T2] LEDs – structure – Light source, Quantum
efficiency, Modulation of an LED
Double Heterojunctions
(DH):
In order to achieve efficient
confinement of emitted
radiation double
heterojunctions are used in
LED structure.
A heterojunciton is a
junction formed by dissimilar
semiconductors.
Double heterojunction (DH)
is formed by two different
semiconductors on each side
of active region.
Fig. 3.1.1 shows double heterojunction (DH) light
emitter.
1. The crosshatched
regions represent the
energy levels of free
charge.
2. Recombination occurs
only in active In GaAsP
layer.
3. The two materials have
different band gap
energies and different
refractive indices.
4. The changes in band gap
energies create potential
barrier for both holes and
electrons.
5. The free charges can
recombine only in narrow,
well defined active layer
side.
6. A double heterojunction
(DH) structure will
confine both hole and
electrons to a narrow
active layer.
7. Under forward bias,
there will be a large
number of carriers
injected into active region
where they are efficiently
confined.
8. Carrier recombination
occurs in small active
region .
9. . Another advantage DH
structure is that the active
region has a higher
refractive index than the
materials on either side,
hence light emission
occurs in an optical
waveguide, which serves
to narrow the output beam.
LED configurations
At present there are two main types of LED used in
optical fiber links
1] Surface emitting LED
2]Edge emitting LED.
Eg = 1.513 eV
now
Example 3.1.2 : For an alloy In0.74 Ga0.26 As0.57 P0.43 to be sued in Led. Find the
wavelength emitted by this source.
Solution : Comparing the alloy with the quartenary alloy composition. In1-x Gax As P1-y it
is found that
x = 0.26 and y= 0.57
Eg = 1.35 – 0.72 y + 0.12 y2
Using
Eg = 1.35-(0.72 x 0.57) + 0.12 x 0.572
Eg = 0.978 eV
now
Where,
Solutions:
Given : λ = 870 nm 0.87 x 10-6 m
τr = 60 nsec.
τnr = 90 nsec.
I = 40 mA = 0.04 Amp.
i) Total carrier recombination life time:
iii)
iv)
Example 3.1.4 : A double heterjunciton InGaAsP LED operating at 1310 nm has radiative
and non-radiative recombination times of 30 and 100 ns respectively. The current injected is
40 Ma.
Calculate – Bulk recombination life time. Internal quantum efficiency Internal power level.
Advantages of LED
Simple design.
Ease of manufacture.
Simple system integration.
Low cost.
High reliability.
Disadvantages of LED
1. Refraction of light at semiconductor/air interface.
2. The average life time of a radiative recombination is
only a few nanoseconds, therefore
3. Modulation BW is limited to only few hundred
megahertz.
4. Low coupling efficiency.
5. Large chromatic dispersion.
Comparison of Surface and Edge Emitting LED
LED type Max. modulation freq. (MHz) Output power (mW) Fiber coupled power
Surface emitting 60 <4 < 0.2
Edge emitting 200 <7 < 1.0
[T]LASER
diodes
Injection Laser Diode (ILD)
The laser is a device which amplifies the light,
hence the LASER is an acronym for light
amplification by stimulated emission of radiation.
The operation of the device may be described by
the formation of an electromagnetic standing wave
within a cavity (optical resonator) which provides
an output of monochromatic
highly coherent radiation.
Principle :
Material absorb light than emitting.
Three different fundamental process occurs between the two energy states of an
atom.
1] Absorption
2) Spontaneous emission
3) Stimulated emission.
2. spontaneous emission,
[T]Source to
Fiber power
launching
SOURCE TO FIBER POWER LAUNCHING:
The optical power that can couple into a fiber depends on the radiance or
brightness which is given through a diode drive current.
Radiance is the optical power radiated into a unit solid angle per unit emitting surface
areas and is generally specified in terms of Watts/cm2.
The optical power that can couple into a fiber depends on the radiance or brightness which
is given through a diode drive current. Radiance is the optical power radiated into a unit
solid angle per unit emitting surface areas and is generally specified in terms of Watts/cm2.
Here the figure shows a spherical coordinate system characterized by R, θ and ϕ with the
polar axis. The radiance may be a function of both θ and ϕ and can also vary from point to
point on the emitting surface.
1). Surface emitter LED can be characterized by this output pattern, which means the source is equally
bright when viewed from any direction. The power delivered at an angle θ, varies as cosθ because the
projection area of emitting surface varies, so the emission area pattern follows:
𝑩(𝛉, 𝛟) = 𝐁𝟎𝐜𝐨𝐬𝛉
B0: radiance along the normal to the radiating surface.
2). For edge emitter LED, and laser diodes, more complex emission pattern exists. These devices have
different radiance B(θ,900) and B(θ,00) in the planes parallel and normal.
[T]LASER diode to fiber coupling
POWER COUPLING: The optical power coupling of any fiber can be calculated by the
symmetric source of brightness (B), area
𝐴𝑠and solid acceptance angle Ω𝑠
Here, the fiber end face is centered over emitting surface of the source
and is positioned as close as possible. So, the power coupled is:
0 0
𝑃 = ∫ 𝑑𝐴𝑠 ∫ 𝑑Ω𝑠𝐵(𝐴𝑠, Ω𝑠)
𝐴𝑟𝑓 2𝜋 Ω𝑓2𝜋 𝜃0,𝑚𝑎𝑥
𝑚
𝑃=∫ ∫ [∫ ∫ 𝐵(𝜃, 𝜙)𝑠𝑖𝑛𝜃𝑑𝜃𝑑𝜙] 𝑑𝜃𝑠𝑟𝑑𝑟
0 0 0 0
𝑟𝑚: upper integration limit of radiation
If the source radius 𝑟𝑠 is less than fiber core radius a, then 𝑟𝑚 = 𝑟𝑠; and for sources
areas larger than
𝑟𝑠 2𝜋the fiber𝜃0,𝑚𝑎𝑥
core area, 𝑟𝑚= a. For SLED, 𝑟𝑠 < 𝑎, so,
𝑃 = ∫ ∫ [2𝜋𝐵0 ∫ 𝑐𝑜𝑠𝜃 𝑠𝑖𝑛𝜃 𝑑𝜃] 𝑑𝜃𝑠𝑟𝑑𝑟
0 0 𝑟𝑠 2𝜋 0
𝑃 = 𝜋𝐵0 ∫ ∫ 𝑠𝑖𝑛2𝜃0,𝑚𝑎𝑥𝑑𝜃𝑠𝑟𝑑𝑟
0 𝑟𝑠 0 2𝜋
𝑃 = 𝜋𝐵0 ∫ ∫ 𝑁𝐴2𝑑𝜃𝑠𝑟𝑑𝑟
0 0
where, L and T represents lateral power and transverse power distribution.
Photo diodes
Semiconductor photodiodes are the most commonly used detectors in optical fiber systems since they provide good performance,
being small in size, and are of low cost.
Semiconductor photodiodes are made of silicon, germanium, GaAs, InGaAs, etc.
M=IIpM=IIp
1 PIN does not have high APD has high intensity electric field region.
intensity electric field region.
2 Photo current (IpIp) generated Photo current (IpIp) generated is more compared to PIN,
is less compared to APD
Ip=qNθ.M
Ip=qNθ,
q = electron charge,
q = electron charge,
Nθ= carrier number,
Nθ = carrier number
M = multiplication factor
3 Responsively of PIN is limited. Responsively of APD can have much larger values.
4 They exhibit lower noise levels. They exhibit higher noise levels as compared to PIN due
to impact ionization and photocurrent multiplication.
5 Response time of PIN is half Response time of APD is almost double that of PIN.
that of APD.
Photo detector noise is that undesired disturbance masks the signal in communication system. Photo detector
noise is that undesired disturbance masks the signal in communication system.