GURUKUL INDEPENDENT PU COLLEGE, KALABURAGI

MCQ WORKSHEET
CHAPTER: FIELD EFFECT TRANSISTOR
CLASS: PUII SUB: ELECTRONICS

CHOOSE THE CORRECT ANSWER FOR THE FOLLOWING

1. A JFET is also called …………… transistor

a. Unipolar b. bipolar c. unijunction
d. none of the above
2. A JFET is a ………… driven device
a. Current b. voltage c. both current and voltage
d. none of the above
3. The gate of a JFET is ………… biased
a. Reverse b. forward c. reverse as well as forward
d. none of the above
4. The input impedance of a JFET is …………. that of an ordinary
transistor
a. equal to b. less than c. more than d.
none of the above
5. In a p-channel JFET, the charge carriers are …………..
a. Electrons b. holes c. both electrons and holes
d. none of the above
6. When drain voltage equals the pinch-off-voltage, then drain current
…………. with the increase in drain voltage
a. Decreases b. increases c. remains constant
d. none of the above
7. If the reverse bias on the gate of a JFET is increased, then width of the
conducting channel …………..
a. is decreased b. is increased c. remains the same
d. none of the above
8. A JFET has ……….. power gain
a. Small b. very high c. very small
d. none of the above
9. A JFET has ……….. power gain
a. Small b. very high c. very small
d. none of the above
10. A common base configuration of a pnp transistor is analogous
to ………… of a JFET
a. common source configuration
b. common drain configuration
c. common gate configuration
d. none of the above
11. A JFET has high input impedance because …………
a. it is made of semiconductor material
b. input junction is reverse biased
c. of impurity atoms
d. none of the above
12. In a JFET, when drain voltage is equal to pinch-off voltage, the
depletion layers ………
a. almost touch each other
b. have large gap
c. have moderate gap
d. none of the above
13. In a JFET, IDSS is known as …………..
a. drain to source current
b. drain to source current with gate shorted
c. drain to source current with gate open
d. none of the above
14. The two important advantages of a JFET are …………..
a. high input impedance and square-law property
b. inexpensive and high output impedance
c. low input impedance and high output impedance
d. none of the above
15. …………. has the lowest noise-level
a. Triode b. ordinary transistor c. tetrode d. JFET
16. If the gate of a JFET is made less negative, the width of the
conducting channel……….
a. remains the same
b. is decreased c. is increased d. none of the above
17. The pinch-off voltage of a JFET is about ……….
a. 5 V b. 0.6 V c. 15 V d. 25 V
18. The gate voltage in a JFET at which drain current becomes zero
is called ……….. voltage
a. Saturation b. pinch-off c. active d. cut-off
19. In a FET, there are ……….. pn junctions at the sides
a. Three b. four c. five d. two
20. The transconductance of a JFET ranges from ……………..
a. 100 to 500 mA/V b. 500 to 1000 mA/V
c. 0.5 to 30 mA/V d. above 1000 mA/V
21. If the cross-sectional area of the channel in n-channel JEFT
increases, the drain current ……….
a. is increased b. is decreased c. remains the same
d. none of the above
22. The channel of a JFET is between the …………….
a. gate and drain
b. drain and source
c. gate and source
d. input and output
23. For VGS = 0 V, the drain current becomes constant when
VDS exceeds ………
a. cut off b. VDD c. VP d. o V
24. A certain JFET data sheet gives  VGS(off) = -4 V. The pinch-off
voltage Vp is ……..
a. +4 V b. -4 V c. dependent on VGS
d. data insufficient
25. The constant-current region of a JFET lies between
a. cut off and saturation
b. cut off and pinch-off
c. o and IDSS
d. pinch-off and breakdown
26. At cut-off, the JFET channel is ……….
a. at its widest point
b. completely closed by the depletion region
c. extremely narrow
d. reverse biased
27. In a common-source JFET amplifier, the output voltage is
…………………
a. 180o out of phase with the input
b. in phase with the input
c. 90o out of phase with the input
d. taken at the source
28. IDSS can be defined as ………
a. the minimum possible drain current
b. the maximum possible current with VGS held at –4 V
c. the maximum possible current with VGS held at 0 V
d. the maximum drain current with the source shorted
29. When an input signal reduces the channel size, the process is
called …….
a. enhancement
b. substrate connecting
c. gate charge
d. depletion
30. When applied input voltage varies the resistance of a channel,
the result is called…………..
a. Saturation b. polarization c. cut off d. field effect
31. With a JFET, a ratio of output current change against an input
voltage change is called as ………..
a. Transconductance b. siemens c. resistivity
d. gain
32. The transconductance curve of a JFET is a graph of ……………
vs ……….
a. IS versus VDS b. IC versus VCE c. ID versus VGS
d. ID × RDS
33. The FET has three terminals namely
a. Cathode, anode, grid
b. Emitter, base, collector
c. Source, gate, drain
d. Source, base, grid
34. Which of the following statement is true about FET?
a. It has high output impedance
b. It has high input impedance
c. It has low input impedance
d. It does not offer any resistance
35. To use FET as a voltage controlled resistor, in which region it
should operate?
a. Ohmic region
b. cut off
c. Saturation
d. cut off and saturation

FILL IN THE BLANKS

1. FET stands for __________________.
2. FET is _____________ controlled device.
3. The two types of JFET are ___________ and ____________.
4. ____________ controls flow of charge carriers through the channel.
5. FET is a ___________ polar device.
6. ____________ potential is usually applied to the gate terminal.
7. At __________ voltage drain current becomes zero.
8.