EBD_8341

P-302 Physics

28 Semiconductor Electronics:
Materials, Devices and
Simple Circuits

Topic-1 : Solid Semiconductors

and P-N Junction Diode
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Semiconductor Electronics : Materials, Devices and Simple Circuits P-307

4. A common emitter amplifier circuit, built using an npn

1 -1
transistor, is shown in the figure. Its dc current gain is 250, 1 -1 (W )
(W ) ri
RC = 1 k &! and VCC = 10V. What is the minimum base current (a) ri (b) 0.01
for VCE to reach saturation ? [Main 8 Apr. 2019 II] 0.01

0 0.6 1
0 0.6 1 VBE (V)
VBE (V)
1 -1 1 -1
(W ) (W )
ri ri
(c) (d) 0.1

10

0 0.6 1
(a) 40 mA (b) 100 mA 0 0.6 1
VBE (V)
(c) 7 mA (d) 10 mA VBE (V)
10. An n-p-n transistor has three leads A, B and C. Connecting
IC
B and C by moist fingers, A to the positive lead of an
RB
C RC ammeter, and C to the negative lead of the ammeter, one
B finds large deflection. Then, A, B and C refer respectively
E
VCC ~ v0 to: [Main Online April 9, 2014]
5. v1 ~ IE
VBB (a) Emitter, base and collector
(b) Base, emitter and collector
(c) Base, collector and emitter
In the figure, given that VBB supply can vary from 0 to 5.0 (d) Collector, emitter and base.
V, VCC = 5 V, bdc = 200, RB = 100 kW, RC = 1 KW and 11. For a given plate voltage, the plate current in a triode
VBE = 1.0 V. The minimum base current and the input valve is maximum when the potential of [1985 - 2 Marks]
voltage at which the transistor will go to saturation, will (a) the grid is positive and plate is negative
be, respectively : [Main 12 Jan. 2019 II] (b) the grid is zero and plate is positive
(a) 25 µA and 3.5 V (b) 20 µA and 3.5 V (c) the grid is negative and plate is positive
(c) 25 µA and 2.8 V (d) 20 µA and 2.8 V (d) the grid is positive and plate is positive
6. In a common emitter configuration with suitable bias, it is 12. The plate resistance of a triode is 3 × 103 ohms and its
given than RL is the load resistance and RBE is small signal mutual conductance is 1.5 × 10 –3 amp/volt. The
dynamic resistance (input side). Then, voltage gain, current amplification factor of the triode is [1981- 2 - 3 Marks]
gain and power gain are given, respectively, by: (a) 5 × 10–5 (b) 4.5 (c) 45 (d) 2 × 10 5
(b is current gain, IB, IC, IE are respectively base, collector 3 Numeric Answer
and emitter currents:) [Main Online April 15, 2018]
RL DI E 2 RL R DI R 13. The output characteristics of a transistor is shown in the
(a) b , ,b (b) b R , DI , b R
2 L C L
RBE DI B RBE BE B BE figure. When VCE is 10 V and IC = 4.0 mA, then value of bac
2 L R 2 L DI R R DI
2 L R is ______. [Main Sep. 06, 2020 (II)]
(c) b R , DI , b R (d) b R , DI , b R
C L C
(IB )
BE E BE BE B BE
8 60 mA
7. In a common emitter amplifier circuit using an n-p-n 50 mA
(IC) in mA

transistor, the phase difference between the input and the 6 40 mA

4 30 mA
output voltages will be : [Main Online April 2, 2017] 20 mA
(a) 135° (b) 180° (c) 45° (d) 90° 2 10 mA
8. For a common emitter configuration, if a and b have 2 4 6 8 10 12 14
(VCE) in volts
their usual meanings, the incorrect relationship between
a and b is : [Main 2016]
6 MCQs with One or More than One Correct Answer
b b2
(a) a=
1 +b
(b) a= 14. A transistor is used in the common emitter mode as an
1 +b2 amplifier. Then [1998S - 2 Marks]
1 1 (a) the base-emitter junction is forward-biased
(c) = +1 (d) All of these (b) the base-emitter junction is reverse-biased
a b
9. A realistic graph depicting the variation of the reciprocal (c) the input signal is connected in series with the
of input resistance in an input characteristics measurement voltage applied to bias the base-emitter junction
in a common emitter transistor configuration is : (d) the input signal is connected in series with the
voltage applied to bias the base-collector junction
[Main Online April 10, 2016]

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 EBD_8341
P-308 Physics

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Semiconductor Electronics : Materials, Devices and Simple Circuits P-309

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