BLW96
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW96 is Designed for
High Linearity Class A, AB HF Power
Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG
FEATURES: A
.112x45° L
E C
• PG = 14 dB Typical at 200 W/28 MHz
FULL R Ø.125 NOM.
• IMD3 = -32 dBc Typ. at 220 W (PEP) C
• Omnigold™ Metalization System
B
B E
E D
F
H G
MAXIMUM RATINGS I J
K
IC 12 A MINIMUM MAXIMUM
DIM
inches / mm inches / mm
VEES 110 V A .220 / 5.59 .230 / 5.84
B .125 / 3.18
VCEO 55 V C .245 / 6.22 .255 / 6.48
D .720 / 18.28 .7.30 / 18.54
VEBO 4.0 V E .125 / 3.18
F .970 / 24.64 .980 / 24.89
O
PDISS 320 W @ TC = 25 C G .495 / 12.57
.003 / 0.08
.505 / 12.83
.007 / 0.18
H
O O .090 / 2.29 .110 / 2.79
TJ -65 C to +200 C I
J .150 / 3.81 .175 / 4.45
O O K .280 / 7.11
TSTG -65 C to +150 C L .980 / 24.89 1.050 / 26.67
θJC
O
0.7 C/W ORDER CODE: ASI10826
CHARACTERISTICS O
TC = 25 C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 50 mA 110 V
BVCEO IC = 200 mA 55 V
BVEBO IE = 20 mA 4.0 V
ICES VCE = 55 V 10 mA
hFE VCE = 5.0 V IC = 7.0 A 15 50 ---
VCE IC = 20 A IC = 4.0 A 1.9 V
CC VCB = 50 V f = 1.0 MHz 280 pF
GP 13.5 dB
VCE = 50 V ICQ =100 mA POUT = 200 W (PEP) -30
IMD3 dBc
ηC 40 %
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Advanced Semiconductor, Inc.:
BLW96
