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A6 Sod-323

This document summarizes the specifications of a high-speed switching diode called the BAS216. The diode has a small ceramic SMD package and high switching speed of up to 4 ns. It has a continuous reverse voltage rating of 75V and repetitive peak reverse voltage rating of 85V. The diode has a repetitive peak forward current rating of 500 mA and can dissipate a maximum of 400 mW of power. Electrical characteristics including forward voltage, reverse current, capacitance, and recovery times are provided.

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freddy
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263 views2 pages

A6 Sod-323

This document summarizes the specifications of a high-speed switching diode called the BAS216. The diode has a small ceramic SMD package and high switching speed of up to 4 ns. It has a continuous reverse voltage rating of 75V and repetitive peak reverse voltage rating of 85V. The diode has a repetitive peak forward current rating of 500 mA and can dissipate a maximum of 400 mW of power. Electrical characteristics including forward voltage, reverse current, capacitance, and recovery times are provided.

Uploaded by

freddy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SMD Type Diodes

HIGH-SPEED SWITCHING DIODE


BAS216

SOD110 Unit: mm

Features
Small ceramic SMD package
High switching speed:max. 4 ns
Continuous reverse voltage:max.75V
Repetitive peak reverse voltage:max.85V cathode
idenfifier
Repetitive peak forward current:max. 500 mA.

Absolute Maximum Ratings Ta = 25


Parameter Symbol Conditions Min Max Unit
Continuous peak reverse voltage VRRM 85 V
Continuous reverse voltage VR 75 V
Continuous forward current IF Note 1 250 mA
Repetitive peak forward current IFSM 500 mA
square wave; Tj = 25 prior to surge;
t=1 A 4
Non-repetitive peak forwrad current IFSM A
t = 1 ms 1
t=1s 0.5
Total power dissipation Ptot Tamb = 25 ;note 1 400 mW
Storage temperature Tstg -65 +150
Junction temperature Tj 150
Note
1. Device mounted on an FR4 printed-circuit board.

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SMD Type Diodes

HIGH-SPEED SWITCHING DIODE


BAS216

Electrical Characteristics Ta = 25
Parameter Symbol Conditions Min Max Unit
IF = 1 mA 715 mV
IF = 10 mA 855 mV
forward voltage VF
IF = 50 mA 1 V
IF = 150 mA 1.25 V
VR = 25 V 30 nA
VR = 75 V 1 A
capacitance reverse current IR
VR = 25 V, Tj = 150 30 A
VR = 25 V, Tj = 150 50 A
diods capacitance Cd VR = 1 V, f = 1 MHz 1.5 pF
when switched from IF = 10 mA to
reverse recovery time trr IR = 10 mA; RL = 100 4 ns
measured at IR = 1 mA
forward recovery voltage Vrr when switched from IF = 10 mA;tr = 20 ns 1.75 V
Note
1.Pulsed test: tp = 300 s, ä = 0.02.

Marking
Marking A6

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