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Semiconductor: Audio Frequency Amplifier High Frequency Osc

This document provides specifications for an NPN silicon transistor. It lists the absolute maximum ratings including storage temperature, junction temperature, collector dissipation, and breakdown voltages. The electrical characteristics include cut-off currents, current gains, saturation voltages, and breakdown voltages. It also specifies the current gain-bandwidth product and hFE classification ranges.

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Engin Uzun
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25 views

Semiconductor: Audio Frequency Amplifier High Frequency Osc

This document provides specifications for an NPN silicon transistor. It lists the absolute maximum ratings including storage temperature, junction temperature, collector dissipation, and breakdown voltages. The electrical characteristics include cut-off currents, current gains, saturation voltages, and breakdown voltages. It also specifies the current gain-bandwidth product and hFE classification ranges.

Uploaded by

Engin Uzun
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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N P N S I L I C O N T RAN S I S T O R

K I SEMICONDUCTOR C1815

█ AUDIO FREQUENCY AMPLIFIER


HIGH FREQUENCY OSC

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92

T stg ——Storage Temperature………………………… -55~150℃

T j ——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………400mW
1―Emitter，E
V CBO——Collector-Base Voltage………………………………60V 2―Collector，C
3―Base，B
V CEO——Collector-Emitter Voltage……………………………50V

V EBO ——Emitter-Base Voltage………………………………5V

I C ——Collector Current……………………………………150mA

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0
IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0
HFE(1) DC Current Gain 70 700 VCE=6V, IC=2mA
HFE(2) 25 VCE=6V, IC=150mA
VCE(sat) Collector- Emitter Saturation Voltage 250 mV IC=100mA, IB=10mA
VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA
BVCBO Collector-Base Breakdown Voltage 60 V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage 50 V IC=1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0
fT Current Gain-Bandwidth Product 80 MHz VCE=10V, IC=1mA

█ hFE Classification

O Y GR BL

70—140 120—240 200—400 350—700


N P N S I L I C O N T RAN S I S T O R

K I SEMICONDUCTOR C1815

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