ELECTRONIC Chrysanthus THE No.1 ENGLISH. MEDIUM PHYSICS EXPLORATIONol. 02. 03. Electronic in the circuit shown, E is a cell with an intemal resistance and G is a sensitive goid leaf electroscope. s Both capacitors have the same capacitance. Which of e the following is true regarding the deflection of G T aE ic when the switch Sis opened and closed? (1) G shows a none zero deflection which remains unchanged upon opening and closing of the => switch. (2) G shows a zero deflection whether is opened orelosed. (3) G shows a none zero deflection w! Sis opened but becomes zero when S is closed. (4) Gshows a none zero deflection when Sis opened but itreduces to a lower vahie when S is closed (5) G shows a zero deflection when S is opened but shows anon zero deflection when Sis closed (1993) You are given two cells each with an e.m.f. of 2 V and internal resistance 0.1 © and two 20 resistors. Which of the following circuits will give the maximum power through any of the 20 resistor? i, eater 1+ {+ Ly qt ss } Cpe J w @ @) 4), @) (1993) Consider the following statements regarding an intrinsic semiconductor. (A) Theelectrical conductivity decreases with the increasing temperature (B) Theratio of the number of free electrons to the number of holes remains constant temperature with increasing (©) Both the free electrons and holes contribute tothe electric conduction process, Ofthe above statements, (1) Only Ais true. (2) Only Bis true @) OnlyC iste (4) OnlyBandCare true. (5) AUAGS and care tras, (1997)- 04. Which one of the following statements is true regarding the capacitance of a parallel plate capacitor? (1) Itdoesnot depend on the distance between the plates. (2) Itdecreases when a dielectric is placed between the plates. 3) Msunitsare JC". (4) Itisindependent ofthe charge. (5) Itis defined as the energy requited to move a unit charge from one plate to the other. (1994) 05. The logic gate which corresponds tothe truth table shown is E fa [er > Dae @ 1 oss , 1 (1997) 06. Which of the following graphs best represents the relationship between voltage (V) and lime (t) fort fier output from a power supply consisting of an alternating current generator and a full wave re without smoothing? 4 1 (ay Q) @) (4) (5) (1997) 07. Incomparisonto the open switch condition, an npn transistor operating as closed switch has very sma () baeement (2) collector current 3) emitter current (4) emitter-base voltage (5) collector- emitter voltage. (1998 08. In the circuit shown ABC represents a binary number. For the output F to be binary 1. ABC Should, (1) 000 (2) 010 (3) 100 ey, # > @ 101 (5) 110 oe (1998; 10. i. 12, ‘Consider the following statements made about tile root mean squire value I,,, ofan alternating current. (A) 1, 1, (B) I. a -Is the average value of the currentoveracycle, ‘stelated to the peak current I, by Ip. — (C) 1, is the equivalent de current that would produce the same average power loss in a resistor as the alternating current. Of the above statements, (1) Only (A)istrue (2) Only (A) and (B) are true B) Only (A)and(C)are te (4) Only(B)and(C) are true (5) ANl(A),(B) and (C) are true (1999) ‘The variation of the electric field intensity, E, across an ideal p-n junction is best represented by (yy 2) (3, 4) @ @ @ gt IfA, Band C are three Boolean variables, the output, F, is given by () F=A+BC Q) F=(6+ch +B)A B) F=(4+B)e @) Fe (5) F=4+BC In the circuit shown R is a variable resistor and R,hasa fixed value. When R ist its maximum, value, the transistor is biased in the active R region. When R is gradually decreased (A) The base current], increases. t (B) The collector current], decreases. (C) The output voltage V.., decreases Ofthe above statements (1) Only (A)istrue. (2) Only (B)is true. (3) Only (C) is true, (4) Only (A)and (B) arc true. (5) Only (A) and (C) are true. (1999)13. The gate shown in figure is equivalent to Q) (4) (3) (2000) 14. Consider the following statements made about a p-n Junction. (A) Itscurrent (J) - Voltage (V) characteristic is linear. (B) Builtinelectric field across the junction is directed from n-region to p-region (C) Currents carried by holes and electrons are in opposite directions; Ofthe above statements (1) Only (B)is tre. (2) Only (Aj and (B)are trve. (3) OnlyBandC are true. (4) Only (A)and (C) are true (5) All(A),(B) and (C) are true. (2000) 15, Asuitable value for R to bias the silicon transistor in the active mode would be (1) 100kQ (2) 251kQ Q) 75kQ (4) 7.5kQ. (5) 1002 16, Thegateshownin the figureis equivalentto a) Q) @) = 9 © (2001)17. A741 operational amplifier is powered with supply voltages of + 15 V. IfV, and V, represent the input Voltages and V, represents the output voltage, the variation of V, with (V,- V,)is best represented by Wa Mheis Vy i eas a G) (2001) 18. Inthe circuit shown F becomes | when (1) A=0,B=1,C=1 in (2) A=0,B=0,C=1 B (G) A=1,B=0,C=1 F (4) A=1,B+0,C-0 (5) A=1,B=1, e (2002) 19. Voltages applied across a silicon transistor shown are represented with symbols Vy, Vex and Vg, The transistor will operate in the activeregion if (1) Vye-0.7 Vand Vey =0.7V eo? ' 2) Vye=Oand Ve, =0.7V 3) Vae=5Vand 7 N | te aA | (4) V,.=0.7VandV (9) Ve=0.7VandVeg=0 (2002) 20. Of the elements given below, power (VI) can be amplified only with (1) resistors (2) diodes. (3) capacitors. (4) transformers. (5) transistors. (2003) 21. Which ofthe curves shown in figures represents the output characteristic of an npn transistor? ke q@ % vf hae | | j WF) Pad @) Q) I22. 23. 25 a Of the gates, The second input of the gates shown in the diagram are connected 10 binary c performances are identical only in ae (1) PandQ 4 7am f (2) QandR ——— a oh. oma (3) Rands ' se (4) SandT F 2 g F (9) PandT 1 S 4 F H o 2003) 1 - V characteristic of the silicon diodes shown in circuit (A) is given in figure (B). 6 V cell has negligible internal resistance, Of,[, and I, the maximum and the minimum 4 wy 1ro 123 vy currents respectively, are a) (8) Qh (2) I,andI, G3) LL, (4) Landl; (5) 1,,and1, (2003) Figure (a) shows a digital circuit. The variations of the logic values of its inputs A, B and C with time‘ are shown in figure (b). ‘The output X wiil be 0 during the time interval/intervals 1) fromt,tot, eres 4 (1) fromt,tot, A ' (2) fromt, tot, ie Dy 0 ty; pee (3) from:,tot, a -———; iy) B ox . ee | (4) fromt, tot, K te (5) fromt,tot,andfromttot, ¢c { ' 0 i @) mg © (2004 The operational amplifier circuit shown operates +10V with +10 V and-10 V power supplies. What would > be the approximate output voltage ofthe circuit? = We. (1) #22 Q) -22V 3) 20v 2 aay (4) +10 (5) -lov Mos) 10ka (2004)28. ah 26. The breakdown voltage of the zener diode of the circuit shown is SV. The intemal resistance of the cell is oe negligible. When the value of R is changed from 2500 0, the current /ine the circuit will change from a @) 0.10A100,134 @) 0.20At0040a, 10V" G) 0.13Ato0.20A. (4) 0.10A100.20A 0Q (5) 020At00.27A. (2004) The voltage gain ofthe circuit shownis vin ® x @ 2 @) 4 @) +1 (5) +4 A + 2005) Analarmis to be sounded ina carat least when the cars started while a door is open or the car is started while the driver is not wearing seat belt, Three sensors A, B and C provide signals such that f= I when at Jeast one doors open, B= ] when the engine is running and C= 1 when the driver is not rearing seatbelt Ifthe alarm is activated when F= 1, the correct truth table for Fis ALB, C OF hor’: AS ce re eee cor A BC OF oO" 0 OF Oreo: 0. Oro 0 0000 oo 0 0 ool) 0 0 0 aeOROMRIOer Or 1 0 0 0 1 0 oat 0 (1 Dt be aa). ORE Oe o100 O18. <0: ea 1 1 Od 1) 10 ommipe ri Or 019 of mo 0 U1 TS 12 goo he HOD oe 6 oeti 1 Vaden O eo) De diy Osa 110 Yel 10:0; feties0 2 hao 1 vies Ona ih CPT aa ot i150 doit: Ae lea tea Ar de eean ak 3 4) 5 qa) 2) GB) ¢ G) (2008) The diode in the circuit shown has zero forward bias resistance and a reverse break 29 down voltage of 75 V, Internal resistance of WWW the cell is negligible. The voltmeter reads 12V. la When the terminals of the diode are reversed = a ase the voltmeter reading is (1) 6V (2) 8V G3) 9V (4) 10V (5) 18V (2005)30. 31 32, ‘Ap-n junction is connected to a battery as shown in. the figure, When light is shone on the junction, Pe] | electron-hole pairs are created due to the absorption of photons. The current in the circuit produced by the incident lightis (1) dueto electrons moving in the direction of'n top and holes movingin the opposite direction. (2), due toelectrons moving in the direction ofp ton andholes moving inthe opposite di (3) duetoelectrons moving from tononly. (4) duetoholesmoving from nto p only. (5) zero. (2005) In the figure shown, A is a torch bulb, B and C are light emitting diodes. fa strong bar magnet is moved up and down continuously at a high rate through the coil and generates an ac voltage of peak amplitude 4C, (1) only Awilllight up. (2) only Aand Bwill lightup, Pp (3) only Band C will light up (4) only A and C will light up. | (5) all, B and Cwill light up (2006) The figure shows a circuit constructed using a silicon a transistor. If the peak value V, of the input altemating voltage 181 V, the output voltage V,,,is best represented by, 2 Q) (2006)34, 36. 36. Consider the following statements made regarding the logic gate shown inthe figure, (A) When P=1,R=Q (B) WhenQ=0,R=P is R (© WhenP=0,R=0 e Ofthe above statements, Q) only(C)istue. (2) only(A)and(B) are true, 3) only(A)and(C)are true. (4) only (B) and (C) are true. () all(A),(B)and(C)aretrue. (2007) The figure shows an operational amplifier circuit with a light dependent resistor (LDR) and a 1 kQ resistor, The supply voltage to the operational amplifier is + 16.5 V and its saturation voltage is + 15V. The resistance of the -ft>—- v, LDRis 1 MQatcompletedarknessand 100Qat bright light. y.5y L. tw} ‘The approximate values of the output voltage of the circuit hon V,. at complete darkness and bright light will be e b respectively (1) 1.5Vand15V (2) LE Vand165V (3) -1.5Vand-15V (4) -1.5Vand-16.5V (5) 1.5mVand15V (2007) +10v In the circuit shown, the transistor operates in the active mode with Vy, =06V. The collector-emitter voltage Vg in 33K the circuit is approximately (a) 0 Q) Ww @) 4 ye (4) 6V (5) 10V 4.7kQ (2007) -10¥ Which of the two gates shown can be combined to construct a cireuit in order to > obtain a binary output of | for input binary ——|_-—— =>— + digit combinations of 00 and I only? Q R (1) PandR (2) PandQ >> > fT 7 (3) RandU (4) SandR (5) TandQ (209In the circuit shown base current to the aM transistor is 100 WA, and V,, = 0.7 V. If the current gain of the transistor is 100, then the R aoe is iG voltage at Cis = 100 1) 0.1V Q Iv 3) 2V a ) @) 100uA Vg @ 4v (8) 5V (2008) in the circuit shown R,, R, and R, are of the order of a few kilo ohms. An appreciable currents can be found (1) only throughR, andR, (2) onlythroughR, and R, -5V av B) onlythroughR, and R, (4) throughallR,,R,andR, (5) through none of the resistors. (2008) Ifthe voltage necessary to forward bias the diode shown in figure is 0.7 V, the current (/) drawn from the battery wouldbe ¥ 209: ayo (2) SmA (3) 10mA. ; 1200 (4) 30mA (5) 60mA 6V.r=0 (2009) Which of the following curves correctly represents the variation of the voltage gain ee Vv. ofR, is changed from 1 kOto infinity? ) ofthe circuit shown when the value ( a ) isnot drawnto scale Se Vea Sr qQ) & "Se 1k k fe ee eee ee i im a ce y ® 6 Bxix x (2009)stable logic levels for Q, and Q, 2) Wyonly (4) (A)and (D) only (2009) == =D @) (®) © (2010) Figure shows two silicon transistors _T, andT, located in a circuit, which operate properly. ff, values of the F transistors T, and T, are 0.1 V and 3V respectively, 1, & Vog=0.i1V Yop =3¥ " which of the followings true? (1) V,,0fT, isapproximately 0.6 V, and the BC junction is forward biased, Q) ¥,-0f7, isapproximately 0.6, and the BCjunctionis forward biased DG) ¥4-0f7, isapproximately 0.6 V, and the BCjunctionis reverse biased ~ @) V,.of T;is approximately 2.3 V, and the BCjunction is forward biased i (5) ¥,-ofT, is approximately 3 V, and the BC junction is reverse biased. 2010)44. In the circuit shown, D is a silicon diode. The Which of the following curves best represents the x variation of /with V? PY ee wo iv Vo ‘ye va0 Boater & a Q (3) 4) ©) voltage source provides a variable voltage V ey be (2010) 45, Which of the following gates cannot have more than one input"? (1) ANDgate 2) ORgate (3) NAND gate (4 NOTgate (5) EX-OR gate (011) 46. The circuit shown in the figure is made of ideal y elements, When a sinusoidal voltage of peak $V’ ae: amplitude 5 V is apphed to the input, the waveform of 7 the output voltage V, wouldbe aT Q) 47. Which of the Si transistors shown operates in the active mode? 7 cer . \. a) @) (5)_ supply voltages 1s provided via voltage ignal which increases linearly with time (1) as shown in the figure. The non-inverting sy! input is provided with a rectangular voltage ‘waveform of amplitude 5 V asshown, ° The output waveform of the operational amplifieris best represented by au ae jt ae | Q) @ Which of the logic circuits shown will operate in the following mannez? When S=0, output F=X (value of X'can be either 1 or0) When S= !, output F=0 (irrespective of the value of X) (1) (A)only. (5) (B)and (C) only. eG x x. oe (2) (B)only F F 3) (C)only. (4) (A)and(B) only. 5 (B) "| } © (2012) (2012)