Date

Date of of Examination
Examination :
: 31/10/2021

AHSANULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Department: Electrical and Electronic Engineering
Program: Bachelor of Science in Electrical and Electronic Engineering
Semester Final Examination: Fall 2020
Year: 3rd Semester: 2nd
Course Number: EEE 3203
Course Name: Solid State Devices
Time: 02 (Two) Hours Full Marks: 50

Use separate answer script for each part

Answer script should be hand written and should be written in A4 white paper. You must
Instructions: i)
submit the hard copy of this answer script to the Department when the university reopens.
You must write the following information at the top page of each answer script:
Part A/Part B
Department: Program:
ii) Course no: Course Title:
Examination: Semester (Session):
Student ID: Signature and Date:
Write down Student ID, Course number and put your signature on top of every single
iii)
page of the answer script.
iv) Write down page number at the bottom of every page of the answer script.
Upload the scan copy of your answer script in PDF format through provided google form
at the respective course site (i.e., google classroom) using institutional email within the
allocated time. Uploading clear and readable scan copy (uncorrupted) is your
v)
responsibility and must cover the full page of your answer script. However, for clear and
readable scan copy of the answer script student should use only one side of a page for
answering the questions.
You must avoid plagiarism, maintain academic integrity, and ethics. You are not
vi) allowed to take any help from another individual and if taken so can result in stern
disciplinary actions from the university authority.
vii) Marks allotted are indicated in the right margin.
Necessary charts/tables are attached at the end of the question paper. You may use graph
viii)
papers where necessary.
ix) Assume any reasonable data if needed.
x) Symbols and characters have their usual meaning.
Before uploading rename the PDF file as CourseNo_StudentID_PartNo.pdf
xi) For example, EEE 3203_180105001_PartA.pdf
EEE 3203_180105001_PartB.pdf

Page 1 of 3
 PART A
The answer script (one single pdf file) of this part (Part A) must be uploaded at designated location in the provided
google form link available in the google classroom.
There are 03 (Three) Questions. Answer any 02 (Two).

Question 1. [Marks: 12.5]

a) Describe the concept of formation of conduction band and valence band. [3]
b) Distinguish among Direct, Indirect and Degenerate semiconductors. [3]
c) Outline the structural detail of Solar cell as a solid state device. [3.5]
d) At 300 K, compute the probability that an energy level 3kT above the Fermi level is occupied by an [3]
electron.

Question 2. [Marks: 12.5]

a) Discuss briefly about the concept of hole and bonding orbital. [2.5]
b) Show that [6]
Ei - Emidgap = (3/4) kT log (mp*/mn*)

c) A new semiconductor has Nc=1019 cm-3, Nv=5x1018 cm-3 and Eg=2 eV. It is doped with 1017 donors [4]
(fully ionized). Compute the electron concentration at 6270C.

Question 3. [Marks: 12.5]

a) State the Kronig Penny Model. [2.5]
b) Show that [6]
D/μ =kT/q

c) In a very long p-type Si bar with cross sectional area 0.5 cm2 and Na= 1017 cm-3, we inject holes such [4]
that the steady state excess hole concentration is 5x1016 cm-3 at x=0. Compute either the steady state
separation between hole quasi fermi level (Fp) and Ec at 1000 Angstrom or the diffusion length Lp [μp=
500 cm2/V-sec, τp= 10-10 sec].

Page 2 of 3
 PART B
The answer script (one single pdf file) of this part (Part B) must be uploaded at designated location in the provided
google form link available in the google classroom.

There are 03 (Three) Questions. Answer any 02 (Two).

Question 4. [Marks: 12.5]

a) Describe the concept of depletion approximation at a pn junction. [3]
b) Distinguish between accumulation and inversion band diagram for an ideal MOS structure. [3]
c) Outline the structural detail of a CNTFET. [3.5]
d) Show the Coupled-Diode model of BJT. [3]

Question 5. [Marks: 12.5]

a) Describe briefly about the main differences between reverse bias breakdown mechanisms. [2.5]
b) Show the ideal diode equation considering low level of carrier injections. [6]
+ 0
c) A uniformly doped silicon p n junction at R C [R = 300 + last digit of your roll number + 15] is to be [4]
designed such that at a reverse bias voltage of 15 V, the maximum electric field is limited to 106 V/cm.
Compute the maximum doping concentration in the n region.

Question 6. [Marks: 12.5]

a) State the effects of real surfaces in MOS devices. [2.5]
b) Show the expression for the surface perpendicular electric field and Debye screening length [6]
considering the strong inversion region in the MOSFET.
c) A MOS capacitor is made with n+ Poly Si gate. Si substrate carrier density is 2x1016/cm3, and the oxide [4]
region thickness is ‘R’ nm. Compute the flat band voltage (VFB) of the structure, where the oxide charge
density is 3x109 C/cm2 and φms = - 0.95 V. [R = 12 + last digit of your roll number].

Page 3 of 3