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Sheet 5: Oxidation

This document discusses silicon oxidation processes used in integrated circuit fabrication. It covers topics such as [1] the effects of crystal orientation on oxidation rates, [2] uses of silicon dioxide such as in MOS transistors and isolation, and [3] comparisons of wet and dry oxidation and LOCOS and trench isolation techniques. The document also includes exercises on completing statements about oxidation furnaces and conditions, comparing oxidation processes, and calculating step heights resulting from sequential oxidation steps in a CMOS process.

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Cyrille Magdi
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38 views

Sheet 5: Oxidation

This document discusses silicon oxidation processes used in integrated circuit fabrication. It covers topics such as [1] the effects of crystal orientation on oxidation rates, [2] uses of silicon dioxide such as in MOS transistors and isolation, and [3] comparisons of wet and dry oxidation and LOCOS and trench isolation techniques. The document also includes exercises on completing statements about oxidation furnaces and conditions, comparing oxidation processes, and calculating step heights resulting from sequential oxidation steps in a CMOS process.

Uploaded by

Cyrille Magdi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Ain Shams University ICs Technology

Faculty of Engineering ECE-482


Electronics & Communications 4th Year
Engineering Dept. (ECE) Fall 2021

Sheet 5: Oxidation

I. State whether the following statements are true or false, give reasons and use
neat sketches wherever possible.

a) Crystal orientation affects oxidation rates, with < 100 > silicon oxidizing significantly
faster than < 111 > silicon.
b) Dry oxide films that are thermally grown on < 100 > silicon have especially low surface
state charges and thus make ideal dielectrics for MOS transistors.
c) Bird's beaks appear during local oxidation of silicon (LOCOS).
d) SiO2 can be used as a mask against diffusion or ion implantation, in isolation and in
capacitors.
e) Thin oxide is usually grown using wet oxidation whereas thick oxide is usually grown
using dry oxidation.

II. Complete the following statements.

a) . . . and . . . are carried out in a high temperature furnace tube made of quartz.
b) Thermal oxidation is easily achieved by heating the wafer to a high temperature, typically
700oC to 1300oC in . . . or . . . environment.
c) Silicon is widely used in the present integrated circuit technologies due to . . .

III. Make the following comparisons; arrange your answers in a table.

a) Wet and dry oxidation concerning chemistry, temperature, oxide quality, growth rate,
density and oxide breakdown voltage.
b) LOCOS and trench isolation concerning fabrication steps and application.

IV. Give a brief note on the CMP technology and mention its importance. Use
sketches as much as possible.

V. In a typical CMOS process, etching was carried after growing field oxide to
create the active area of transistors. Then the wafer was subjected to an
oxidation process to grow gate oxide.
Calculate the heights of the steps formed at the oxide surface and the Si/SiO2
interface given that the oxidation processes were performed under the following
conditions:
 FOX: temperature = 1000oC and time = 70 minutes.
 TOX: temperature = 1100oC and time = 50 minutes.

1
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Best Wishes
Figure 1Dry and Wet Silicon Oxidation chart for < 100 > Silicon Prof. Hani Fikry

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