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Datasheet D2061 NPN 3A

The document provides product specifications for the 2SD2061 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220Fa case and has low saturation voltage, excellent current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. Key specifications include a maximum collector current of 3A, collector-emitter breakdown voltage of 60V, DC current gain range of 100-320, and transition frequency of 8MHz.

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463 views3 pages

Datasheet D2061 NPN 3A

The document provides product specifications for the 2SD2061 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220Fa case and has low saturation voltage, excellent current gain characteristics, and a wide safe operating area, making it suitable for low frequency power amplifier applications. Key specifications include a maximum collector current of 3A, collector-emitter breakdown voltage of 60V, DC current gain range of 100-320, and transition frequency of 8MHz.

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2061

DESCRIPTION ・
・With TO-220Fa package
・Low collector saturation voltage
・Excellent DC current gain characteristics
・Wide safe operating area

APPLICATIONS
・For low frequency power
amplifier applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 80 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 3 A

ICM Collector current-Peak 6 A

TC=25℃ 30
PC Collector power dissipation W
Ta=25℃ 2

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2061

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 60 V

V(BR)CBO Collector-base breakdown voltage IC=50μA , IE=0 80 V

V(BR)EBO Emitter-base breakdown voltage IE=50μA , IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V

VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V

ICBO Collector cut-off current VCB=60V IE=0 10 μA

IEBO Emitter cut-off current VEB=4V; IC=0 10 μA

hFE DC current gain IC=0.5A ; VCE=5V 100 320

fT Transition frequency IC=0.5A ; VCE=5V;f=5MHz 8 MHz

Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 70 pF

‹ hFE Classifications

E F

100-200 160-320

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD2061

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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