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ECE 522 IC Fabrication Problems in Film Deposition: HG K - 1.9/kT) C NG N 5X10

This document discusses 15 problems related to film deposition in integrated circuit fabrication. The problems cover topics like calculating deposition rates of various materials using different deposition techniques like evaporation and CVD at various temperatures and pressures. They also involve calculating thickness variations across wafers during deposition and modeling dopant profiles during epitaxial growth.

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Sahil Yadav
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81 views3 pages

ECE 522 IC Fabrication Problems in Film Deposition: HG K - 1.9/kT) C NG N 5X10

This document discusses 15 problems related to film deposition in integrated circuit fabrication. The problems cover topics like calculating deposition rates of various materials using different deposition techniques like evaporation and CVD at various temperatures and pressures. They also involve calculating thickness variations across wafers during deposition and modeling dopant profiles during epitaxial growth.

Uploaded by

Sahil Yadav
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ECE 522 IC Fabrication

Problems in Film Deposition

1. A silicon wafer sits on a bench in the laboratory at a temperature of 300 K and a pressure of
1 atm. Assume that the air consists of 100% oxygen. How long does it take to deposit one
atomic layer of oxygen on the wafer surface, assuming 100% adhesion?
2. Repeat Problem 6.1, but this time the wafer is kept in a nitrogen-purged cabinet in which the
oxygen content is less than 0.1% of the total gas content.
3. Calculate the impingement rate and mean free path for oxygen molecules (M = 32) at 300
K and a pressure of 10-4 Pa. What is this pressure in torr?
4. An ultrahigh-vacuum system operates at a pressure of 10-8 Pa. What is the concentration of
residual air molecules in the chamber at 300 K?
5. A high-vacuum system has a residual nitrogen concentration of 1000 molecules/cm 2 .
What is the gas pressure at 300K?
6. The partial pressure of a material being deposited in a vacuum system must be well
above the residual background gas pressure if reasonable deposition rates are to be
achieved. What must the partial pressure of aluminum be to achieve a deposition rate of 100
nm/min? Assume close packing of spheres with a diameter of 5 𝐴̇, 100% adhesion of the
impinging aluminum, and a temperature of 300 K.
7. A wafer 100 mm in diameter is mounted in an electron-beam evaporation system in
which the spherical radius is 40 em. Use Eq. (6.7) to estimate the worst-case variation in film
thickness between the center and edges of the wafer for an evaporated aluminum film 1 μm
thick.
8. Electron-beam evaporation is going to be used to deposit a 0.6-f.lm-thick layer of aluminum
on a 300-mm-diameter wafer. The thickness variation between the center and edges of the
wafer is desired to be less than 0.05 μm. How far should the wafer be from the source?
9. An MBE system must operate under ultrahigh-vacuum conditions to prevent the formation of
undesired atomic layers on the surface of the substrate. What pressure of oxygen can be
permitted at 300 K if formation of a monolayer of contamination can be permitted after the
sample has been in the chamber for no less than 4 hr?

10. (a) Calculate the growth rate of a silicon layer from an SiCI4 source at 12000 C. Use hg =

1cm/sec, ks = 2 X 106 exp ( -1.9/kT) cm/sec,


. and Ng = 3 X 1016 atoms/cm 3. (For silicon, N =
22 3
5X10 /cm )
(b) What is the change in growth rate if the temperature is increased by 25 °C?
(c) At what temperature does k, = hg? What is the growth rate at this temperature?
11. Use Eqs. (6.31) and (6.32) to model the case of a 10- μm n-type epitaxial layer (NE = 1 X
1016/cm3) grown on a p-type substrate (Ns = 1x 1018/cm3 . Plot the impurity
) profile in the
epitaxial layer and substrate assuming that the layer was grown at a rate of 0.2 μm /min at a
temperature of 1200 °C. Assume that boron and phosphorus are the impurities. Find the
location of the pn junction.
12. Compare and discuss the advantages and disadvantages of evaporation, sputtering, and
chemical vapor deposition.
13. A 1-kg source of aluminum is used in an E-beam evaporation system. How many 100-
mm wafers can be coated with a 1- μm AI film before the source material is exhausted?
Assume that 15% of the evaporated aluminum actually coats a wafer. (The rest is deposited
on the inside of the electron-beam system.)
14. A silicon wafer 100 mm in diameter is centered 200 mm above a small planar evaporation
source. Calculate the ratio of thickness between the center and edges of the wafer using
Eq. (6.7), following a 1- μm film deposition.
15. Advanced CMOS processes often use lightly doped epitaxial layers grown on heavily
doped substrates. Use Eq. (6.31) to predict the dopant profile in the epilayer if an intrinsic
silicon layer is grown on top of a substrate that has a uniform concentration of 1020 As
atoms/cm 3. Assume the layer thickness is 1 μm and that it is grown in SiCI4 at 1,100 °C.

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