0% found this document useful (0 votes)
98 views4 pages

2SB698/2SD734: 1W AF Output, Electronic Governor, DC-DC Converter Applications

This document summarizes the specifications and characteristics of the 2SB698/2SD734 epitaxial planar silicon transistor. It is a 1W AF output transistor intended for electronic governor and DC-DC converter applications. The document lists the transistor's absolute maximum ratings, electrical characteristics at 25°C including current gain, gain-bandwidth product, output capacitance, and breakdown voltages. It also provides notes on applications, reliability, safety, and export restrictions.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
98 views4 pages

2SB698/2SD734: 1W AF Output, Electronic Governor, DC-DC Converter Applications

This document summarizes the specifications and characteristics of the 2SB698/2SD734 epitaxial planar silicon transistor. It is a 1W AF output transistor intended for electronic governor and DC-DC converter applications. The document lists the transistor's absolute maximum ratings, electrical characteristics at 25°C including current gain, gain-bandwidth product, output capacitance, and breakdown voltages. It also provides notes on applications, reliability, safety, and export restrictions.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Ordering number:512F

PNP/NPN Epitaxial Planar Silicon Transistor

2SB698/2SD734
1W AF Output, Electronic Governor,
DC-DC Converter Applications

Package Dimensions
unit:mm
2003A
[2SB698/2SD734]

JEDEC : TO-92 B : Base


( ) : 2SB698 for audio 1W output.
EIAJ : SC-43 C : Collector
Specifications SANYO : NP E : Emitter

Absolute Maximum Ratings at Ta = 25˚C


Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)25 V
Collector-to-Emitter Voltage VCEO (–)20 V
Emitter-to-Base Voltage VEBO (–)5 V
Collector Current IC (–)0.7 A
Collector Current (Pulse) ICP (–)1.5 A
Collector Dissipation PC 0.6 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)20V, IE=0 (–)1.0 µA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)1.0 µA
DC Current Gain hFE1 VCE=(–)2V, IC=(–)50mA 60* 560*
hFE2 VCE=(–)2V, IC=(–)500mA 50
Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA 250 MHz
Output Capacitance Cob VCB=(–)10V, f=1MHz (13) pF
8 pF

* : The 2SB698/2SD734 are classified by 50mA hFE as follows :


60 D 120 100 E 200 160 F 320 280 G 560

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4017KI/3075KI/1313KI/6162KI, TS No.512–1/4
2SB698/2SD734

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)500mA, IB=(–)50mA (–0.2) (–0.45) V
0.13 0.3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)500mA, IB=(–)50mA (–)0.9 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)25 V
Collector-to-Emitter Brakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ (–)20 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(–)10µA, IC=0 (–)5 V

No.512–2/4
2SB698/2SD734

No.512–3/4
2SB698/2SD734

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any and all SANYO products described or contained herein fall under strategic
products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of
Japan, such products must not be exported without obtaining export license from the Ministry of
International Trade and Industry in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 1998. Specifications and information herein are
subject to change without notice.

PS No.512–4/4

You might also like