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Features: - 0.2A, - 60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente

1. This document provides specifications for the 2SA1235A PNP silicon plastic encapsulated transistor. 2. Key features include low collector current and low collector power dissipation. 3. The transistor comes in an SOT-23 package and has an hFE range of 150-300 or 250-500 depending on product rank.

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Rohit Suman
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32 views

Features: - 0.2A, - 60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente

1. This document provides specifications for the 2SA1235A PNP silicon plastic encapsulated transistor. 2. Key features include low collector current and low collector power dissipation. 3. The transistor comes in an SOT-23 package and has an hFE range of 150-300 or 250-500 depending on product rank.

Uploaded by

Rohit Suman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SA1235A

-0.2A , -60V
Elektronische Bauelemente PNP Silicon Plastic Encapsulated Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

SOT-23
FEATURES
 Low Collector Current
A
 Low Collector Power Dissipation L
3
3

Top View C B
CLASSIFICATION OF hFE (1) 1
1 2

Product-Rank 2SA1235A-ME 2SA1235A-MF K E 2

Range 150~300 250~500 D


Marking M‧E M‧F F G H J

Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
PACKAGE INFORMATION A 2.80 3.00 G 0.10 REF.
B 2.25 2.55 H 0.55 REF.
Package MPQ LeaderSize C 1.20 1.40 J 0.08 0.15
D 0.90 1.15 K 0.5 REF.
E 1.80 2.00 L 0.95 TYP.
SOT-23 3K 7’ inch F 0.30 0.50

Collector



Base


Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -60 V
Collector to Emitter Voltage VCEO -50 V
Emitter to Base Voltage VEBO -6 V
Collector Current - Continuous IC -200 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance Junction to Ambient RθJA 625 °C / W
Junction and Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -100A, IE=0
Collector to Emitter Breakdown V(BR)CEO -50 - - V IC= -0.1mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -100A, IC=0
Collector Cut-off Current ICBO - - -100 nA VCB= -60V, IE=0
Emitter Cut-off Current IEBO - - -100 nA VEB= -6V, IC=0
hFE (1) 150 - 500 VCE= -6V, IC= -1mA
DC Current Gain
hFE (2) 90 - - VCE= -6V, IC= -0.1mA
Collector to Emitter
VCE(sat) - - -0.3 V IC= -100mA, IB= -10mA
Saturation Voltage
Base to Emitter Saturation Voltage VBE(sat) - - -1 V IC= -100mA, IB= -10mA
Transition Frequency fT - 200 - MHz VCE= -6V, IC= -10mA
Collector Output Capacitance Cob - 4 - pF VCB= -6V, IE=0, f=1MHz

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

19-Jan-2011 Rev. A Page 1 of 1

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