Syllabus
EE339/G Semiconductor Materials and Devices
Time and Place: Tuesday and Thursday 5:00-6:15 pm (online – Blackboard)
Instructor: Prof. Aidong Shen
[email protected]Office Hours: 11:00am -12:30 pm Mon. & Wed. or by appointment (Phone or Zoom)
Required Solid State Electronic Devices
Text by B. G. Streetman
Reserved Introduction to Solid State Physics
Texts by Charles Kittel
Homework: Homework assignments will be given regularly throughout the semester.
Homework must be submitted within one week of the assignment.
Completion of homework will be counted on as part of the final grade
evaluation.
Attendance policy: Quizzes will be given regularly during the session at unspecified
time. Please inform me in advance if you will miss a class for some
reason so I’ll try to make sure you won’t miss the quizzes.
Grade Evaluation: Homework and effort 20%
Quizzes 60%
Final 20%
Week 1 Introduction to semiconductor materials
Week 1-5 Introduction to crystal structures
Lattice, Unit cells, Miller indices, X-ray diffraction
Week 6-8 Energy bands and charge carriers in semiconductors
Energy band formation, Kronig-Penny model
Electrons and holes, effective mass
Week 9-11 Carrier statistics and doping of semiconductors
Density of state, Fermi-Dirac distribution, Fermi level
Carrier density, doping of semiconductors
Week 11-13 Carrier process
Drift, diffusion, mobility, generation and recombination
Continuity equation
Hall effect, photoluminescence
Week 13-15 P-N junction
Formation of space charge region, built-in potential
Diode under external bias, ideal diode equation
Week 16 Material growth and device fabrication
Diffusion, implantation, photolithography
Epitaxial growth, metallization
Week 16-17 Review
Final
