Electrical and Electronic Circuits

EEE Principles, Components, Circuit Analysis

12-IS-EE101
 Amplifier Operation

 Small Signal (ac) Gain

 Large Signal dc Bias (Q point)

 Frequency Range:

 Low frequency (0-150Hz): ECG (?)

 Audio (20Hz – 20kHz)

 Radio (20kHz–20GHz)

 Tera-Hertz (1012Hz)
Source: https://www.electronics-tutorials.ws/amplifier/amplifier-classes.html
 Amplifier Response (1)

Saturation

Linear

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Amplifier Response (2)

DC Bias Small signal (o/p;

i/p)

Gain- slope @
Q
Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Amplifier Parameters (BJT, NPN)
Inverter
Transfer Characteristics: I/P: 0 (LOW) → O/P: 1(HIGH)

 O/P vs. I/P voltage +VCC

800mV
Vout
 Vcc → 10V; Transistor OFF Vi < 600 mV
VCC/2 Q
Amplifier→ 600-800 mV
Amplifier
Q → VCC/2, (5V, 700mV) Gain: Slope@Q 600mV Vin

Gain (dVo/dVi) = Slope (Q) GND

Inverter
Inverter: Vi (Low) → Vo (High) I/P: 1 (HIGH) → O/P: 0 (LOW)
Source: https://personal.utdallas.edu/~chiu.yun/courses/3111Lab/handouts/Lab%203.pdf
 Amplifier Parameters: Class A
Vout
N-Collector
+ Vout
+
Vin N-Emitter
P-Base
Vin
-

 BJT (NPN) → Common Emitter Amplifier (B-E Jn Fwd Bias, C-B Jn Rev Bias)
 High Linearity, High Gain
 Low Efficiency, Lower Frequency Operation

Source: https://www.electronics-tutorials.ws/amplifier/amplifier-classes.html
 Question-04
(Q-04) As shown in Figure (Q-05), an amplifier operates with ±10-V dc voltage
supply (+VCC, -VEE). The input ac small-signal current is sinusoidal (0.1 mA-
peak). The input ac small-signal sinusoidal voltage (1V-p) delivers an output of
(9V-p) to RL = 1-k load. The dc bias current ICC = IEE = 9.5 mA. Find the
(i) voltage gain, (ii) current gain, (iii) power gain in absolute and in decibel (dB)
units. Evaluate (iv) dc power supply to amplifier, and (v) amplifier efficiency.

Amplifier Efficiency: 21.3%

Figure (Q-04)

7
 Q-04 (2)

 Q → (i) voltage gain, (ii) current gain, (iii) power gain, (iv) power drawn from dc supply,
(v) power dissipated in amplifier, and (vi) amplifier efficiency

9.5mA
1V-p
0.1mA-p 9V-p +10

-10
1k

9.5mA

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Q-04 (3)
11/11

𝑣𝑂
 Voltage Gain (𝐴𝑣 ) = 𝑣𝐼
;

 Voltage gain in decibels = 20 log|𝐴𝑣 | dB

 𝒗𝑶 = 9V, 𝒗𝑰 = 1 V
9
 (i) 𝐴𝑣 = 1 = 9 V/V;

 𝑨𝒗 = 20 𝒍𝒐𝒈 𝟗 ≅ 19.1 dB

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Amplifier Models
02/12
VCVS (voltage amplifier)
model of amplifier input terminals model of amplifier output terminals

Ri RL
input voltage = vi = (v s ) output voltage = vo = (Avovi )
Ri + Rs open-ckt
RL + Ro
source
volt. output
source and voltage output and
input load
resistances resistances

Thévenin Source Load

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Amplifier Models (2)
voltage amplifier
Ri RL Ri → ∞
vo = Avov s = Avov s
Amp I/P →
Ri + Rs RL + Ro ideal
Voltage Division model
non-ideal model
O/P → V.D. Ro → 0

Ri >> Rs Ro << RL

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Amplifier Models (3)

VCVS Ri → ∞, Ro → 0 CCCS Ri → 0, Ro → ∞

T/S N/S

VCCS Ri → ∞, Ro → ∞ CCVS Ri → 0, Ro → 0

T/S N/S

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Question 05
(Q-05) A voltage amplifier (VCVS) circuit, as shown in Figure (Q-07) with
voltage gain Avo = +40dB, input resistance Ri = 10k, and output resistance Ro
= 1k will drive load resistance RL = 1k. Find power gain (dB).

Power gain: 44dB

Figure (Q-05)

13
 Question-06
(Q-06) A transducer characterized as a Thévenin voltage of 1V-rms and
series resistance of 1M is available to drive a 10 load (RL). (a) If
connected directly, what voltage and power levels result at the load?
(b) If a unity gain VCVS amplifier (𝑨𝒗𝒐 = 1) with 1-M input resistance
(Ri), and 10 output resistance (Ro) is interposed between source and load
in (a), re-evaluate the output voltage and power levels? (c) For circuit in (b),
𝑣𝑜
find (i) voltage gain , and (ii) power gain (expressed in dB). (Draw circuit
𝑣𝑠
diagrams corresponding to (a) and (b) while explaining the solution steps).

(a) Load Voltage: 0.01mV; (c) Voltage gain: (-) 12dB, Power gain: (+) 44dB

14
 Question-07

(Q-07) Figure (Q-08) below depicts a VCVS amplifier composed of a

cascade of three individual amplifier stages. Evaluate overall voltage gain
𝑣𝐿 𝑖𝐿 𝑝𝐿
( ), current gain ( ), and power gain ( ) in absolute and in dB units.
𝑣𝑆 𝑖𝑆 𝑝𝑆

Current gain: 138.25dB Figure (Q-07)

15
 BJT Amplifier: VCCS
NPN, Common Emitter

C
N-Collector

P-Base (+)
B O/P
(-)
(+)
I/P (-)
E
N-Emitter

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 BJT Amplifier: VCCS (2)

input resistance (rp) output resistance (ro)

base collector

trans- conductance (VCCS)

emitter gain (gm)

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 BJT Amplifier: VCCS (3)
common-emitter amplifier
input and output share common terminal
source load

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Question-08
(Q-08) The Bipolar Junction Transistor (BJT) is a three-terminal device that can be
modeled as an ac small-signal amplifier by the linear circuit shown in Figure (Q-08 ).
The three terminals are base (B), emitter (E), and collector (C). The BJT is thus
depicted as a trans-conductance (VCCS) amplifier, with input resistance 𝒓𝝅 (B-E),
trans-conductance gain 𝒈𝒎 , and output resistance 𝒓𝒐 (C-E). With the Emitter (E) as
a common terminal between input and output, the specific BJT amplifier is also known
as a common-emitter (C-E) circuit.
𝑣𝑜
(a) Derive an expression for voltage gain , and evaluate its magnitude for the case 𝑅𝑆
𝑣𝑆
= 5 kΩ, 𝑟𝜋 = 2.5 kΩ, 𝑔𝑚 = 40 mA/V, 𝑟𝑜 = 100 kΩ, and 𝑅𝐿 = 5 kΩ.
(b) What would the gain value be if the effect of 𝑟𝑜 were neglected?
(a) Voltage gain: (-) 63.5 (V/V); (b) (-) 66.7 (V/V)
19
 BJT Amplifier Example 4.3.1

 (Q) Derive expression for (a-i) voltage gain 𝒗𝟎 / 𝒗𝒔

 (a-ii) Gain magnitude for 𝑅𝑆 = 5 k, 𝑟𝜋 = 2.5 k, 𝑔𝑚 = 40 mA/V, 𝑟0 = 100 k, 𝑅𝐿 = 5 k

 (a-iii) Determine gain value, if 𝒓𝟎 effect neglected?

Thévenin
Load
Source

Amplifier Amplifier
Input Output

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Question-09
(Q-09) The Bipolar Junction Transistor (BJT) is a three-terminal device that can be
modeled as an ac small-signal amplifier as shown in Figure (Q-09) with base (B), emitter (E),
and collector (C) terminals. The BJT is thus depicted as a trans-conductance amplifier,
represented by input resistance 𝒓𝝅 (B-E), trans-conductance gain 𝒈𝒎 , and output
resistance 𝒓𝒐 (C-E). With (E) as a common terminal between input and output, the BJT
amplifier is known as a common-emitter (C-E) circuit. Transform trans-conductance
(VCCS) amplifier in Fig Q-10(a) to a current (CCCS) amplifier in Fig Q-10(b) i.e. find
transformation relationship between trans-conductance gain (gm) and current gain (b).

Figure (Q-09)

Current gain: 40dB

Fig Q-09(a) Trans-conductance amplifier Fig Q-09(b) Current amplifier
21
 4.3.1. VCCS → CCCS

 (Q) (i) VCCS 4.3.1(2) → Gain = Gain(I/P)*Gain(O/P)

 (ii) CCCS 4.3.1-(3) → current gain b expression, value in terms of

VCCS transistor parameters?

ic = gm*vbe = b*ib
ic
ic

VCCS CCCS (3)

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Question-10
Q-10. (a) Transform the circuit shown in Figure (Q-10) in s-domain equivalent circuit. (b) Determine the transfer
𝑉𝑜 𝑠
function 𝑇 𝑠 = , and arrange it in the appropriate standard form. (c) Comment on the circuit - high pass or
𝑉𝑖 𝑠

a low pass network? (d) What is the expression and value of |𝑇(𝑗𝜔𝑜 )|? (e) What is the DC gain expression and
value? (f) What is the corner frequency (𝜔𝑜 ) expression and value? Given: 𝑅𝑠 = 𝑅𝑖 = 10 kΩ, 𝑅𝐿 = 𝑅0 = 40
kΩ and C = 1 µF, 𝐴𝑉0 = 100.

𝑣𝑖

DC gain: 28dB; Figure (Q-10)

wo = 200 rad/s

23
 Example 4.3.2 (2)

 (Q) Derive expressions for VCVS amplifier parameters

 (a-i) Frequency Response: 𝑽𝟎 /𝑽𝑺 → T(s), s = jw
 (a-ii)Corner (Bend, 3dB) frequency wo
 (a-iii) Gain value at w = wo
 (a-iv) DC (w = 0) gain

Thévenin Amplifier Amp

Input O/P Load
Source

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing
 Example 4.3.2 (3)
12/12
 (Q) Partial Solution: 𝑽𝒊 in terms of 𝑽𝒔
𝒁𝒊
 𝑽𝒊 = 𝑽𝒔 𝒁 + 𝑹 (voltage division)
𝒊 𝒔

 𝑍𝑖 → input impedance, also 𝑌𝑖 = 1/𝑍𝑖

𝟏
 𝑽𝒊 = 𝑽𝒔 𝟏 + 𝒀 𝑹
𝒊 𝒔
𝟏
 𝑽𝒊 = 𝑽𝒔 𝟏 +[ 𝟏/𝑹 +(𝒔𝑪 )]𝑹
𝒊 𝒊 𝒔
𝑉 1
 Gain (input stage) → TI(s) = 𝑉𝑖 =
𝑠 1 +[ 𝑅𝑠 /𝑅𝑖 +(𝑠𝐶𝑖 𝑅𝑠 )]

 Extracting {1 + 𝑅𝑠 /𝑅𝑖 } → DC component

𝑽 𝟏
 TI(s) = 𝑽 𝒊 = 𝑹𝒔 𝑹𝒔 𝑹𝒊
𝒔 𝟏+ (𝟏 +𝒔𝑪𝒊 [ ])
𝑹𝒊 𝑹𝒔 + 𝑹𝒊

Source: Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith. Oxford University Publishing