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2 SB 1370

This document provides specifications for a TO-220F bipolar transistor. Key features include a high breakdown voltage, low reverse cut-off current, low saturation voltage, and power dissipation of 2W at 25°C ambient or 30W at 25°C case temperature. The transistor has maximum ratings for collector-base voltage of -60V, collector-emitter voltage of -60V, and emitter-base voltage of -5V. Electrical characteristics include a DC current gain of 100-320, collector-emitter saturation voltage below -1.5V, and transition frequency of 15MHz.

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54 views

2 SB 1370

This document provides specifications for a TO-220F bipolar transistor. Key features include a high breakdown voltage, low reverse cut-off current, low saturation voltage, and power dissipation of 2W at 25°C ambient or 30W at 25°C case temperature. The transistor has maximum ratings for collector-base voltage of -60V, collector-emitter voltage of -60V, and emitter-base voltage of -5V. Electrical characteristics include a DC current gain of 100-320, collector-emitter saturation voltage below -1.5V, and transition frequency of 15MHz.

Uploaded by

wilson
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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2SB1370(PNP)

TO-220F Bipolar Transistors


TO-220F
1. BASE

2. COLLECTOR

3. EMITTE
1 2 3

Features
 Breakdown Voltage High
 Reverse Cut-off Current Small
 Saturation Voltage Low
 Collector Power dissipation
PCM : 2 W (Tamb=25℃)
30 W (Tcase=25℃)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -3 A

TJ Junction temperature 150 ℃


Tstg Storage temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V

Collector cut-off current ICBO VCB=-60V, IE=0 -10 μA

Emitter cut-off current IEBO VEB=-4V, IC=0 -10 μA

DC current gain hFE * VCE=-5V, IC=-500mA 100 320

Collector-emitter saturation voltage VCE(sat) * IC=-2A, IB=-0.2A -1.5 V

Base-emitter saturation voltage VBE(sat) * IC=-2A, IB=-0.2A -1.5 V

Transition frequency fT VCE=-5V, IC=-500mA,f=5MHz 15 MHz

Out capacitance Cob VCB= -10 V ,f=1MHZ 80 pF

*Pulse test: tp≤300μS, δ≤0.02.


CLASSIFICATION OF hFE
Rank E F

Range 100-200 160-320


2SB1370(PNP)
TO-220F Bipolar Transistors

Typical Characteristics

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