Hyperfast Diode

30 A, 1200 V

RHRG30120
Description
The RHRG30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is www.onsemi.com
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling/clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power CATHODE
switching circuits reducing power loss in the switching transistors. (BOTTOM
SIDE METAL)
CATHODE
Features ANODE
• Hyperfast Recovery trr = 85 ns (@ IF = 30 A) TO−247
2 LEAD
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) CASE 340CL
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant MARKING DIAGRAM

Applications
• Switching Power Supplies $Y&Z&3&K
• Power Switching Circuits RHRG30120

• General Purpose

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1200 V
Working Peak Reverse Voltage VRWM 1200 V
$Y = ON Semiconductor Logo
DC Blocking Voltage VR 1200 V &Z = Assembly Plant Code
&3 = Numeric Date Code
Average Rectified Forward Current IF(AV) 30 A
(TC = 80°C) &K = Lot Code
RHRG30120 = Specific Device Code
Repetitive Peak Surge Current IFRM 60 A
(Square Wave, 20 kHz) K
Nonrepetitive Peak Surge Current IFSM 300 A
(Halfwave, 1 Phase, 60 Hz)

Maximum Power Dissipation PD 125 W

Avalanche Energy EAVL 30 mJ
(See Figures 7 and 8)

Operating and Storage Temperature TSTG, TJ −65 to 175 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be A
assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.

© Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

December, 2020 − Rev. 3 RHRG30120/D
 RHRG30120

PACKAGE MARKING AND ORDERING INFORMATION

Device Device Marking Package Shipping
RHRG30120 RHRG30120 TO−247−2L 450/Tube

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
VF Instantaneous Forward Voltage IF = 30 A 3.2 V
(Pulse Width = 300 ms, Duty Cycle = 2%)
IF = 30 A, 2.6 V
TC = 150°C
IR Instantaneous Reverse Current VR = 1200 V 250 mA
VR = 1200 V 1 mA
TC = 150°C
trr Reverse Recovery Time (See Figure 6) IF = 1 A, 65 ns
Summation of ta + tb diF/dt = 100 A/ms
IF = 30 A, 85 ns
diF/dt = 100 A/ms

ta Time to Reach Peak Reverse Current (See Figure 6) IF = 30 A, 48 ns

diF/dt = 100 A/ms
tb Time from Peak IRM to Projected Zero Crossing of IRM IF = 30 A, 22 ns
Based on a Straight Line from Peak IRM Through 25% diF/dt = 100 A/ms
of IRM (See Figure 6)
RqJC Thermal Resistance Junction to Case 1.2 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 RHRG30120

TYPICAL PERFORMANCE CURVES

200 500

100 100 175oC

IR, Reverse Current (mA)

IF, Forward Current (A)

10

175oC 1.0 100oC

100oC
10
0.1
25oC
25oC
0.01

1 0.001
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 200 400 600 800 1000 1200
VF, Forward Voltage (V) VR, Reverse Voltage (V)

Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage

100 IF(AV), Average Forward Current (A) 40

75 30
DC
Trr
t, Time (ns)

50 20
ta SQ.WAVE

25 tb 10

0 0
1 10 30 25 50 75 100 125 150 175

VF, Forward Current (A) TC, Case Temperature (5C)

Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Current Derating Curve

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 RHRG30120

TEST CIRCUITS AND WAVEFORMS

VGE AMPLITUDE AND

RG CONTROL dlF/dt L
t1 AND t2 CONTROL IF

DUT CURRENT dIF Trr

RG SENSE IF
+ dt ta tb
VGE
VDD 0
t1 IGBT −
0.25I RM
t2
IRM

Figure 5. Trr Test Circuit Figure 6. Trr Waveforms and Definitions

IMAX = 1.225 A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)−VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL
L R

CURRENT +
VDD IL IL
SENSE
Q1 IV
VDD
DUT −
t0 t1 t2 t

Figure 7. Avalanche Energy Test Circuit Figure 8. Avalanche Current and Voltage Waveforms

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019

GENERIC
MARKING DIAGRAM*

AYWWZZ XXXX = Specific Device Code

XXXXXXX A = Assembly Location
XXXXXXX Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13850G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−2LD PAGE 1 OF 1

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