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fully edited. Content may change prior to final publication. Citation information: DOI 10.1109/TAP.2020.3005713, IEEE
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1-Bit Dual-Linear Polarized Reconfigurable Transmitarray Antenna Using

Asymmetric Dipole Elements with Parasitic Bypass Dipoles
Yu Wang, Shenheng Xu*, Fan Yang, and Douglas H. Werner

Abstract—Reconfigurable transmitarray antennas with independent

dual-linear polarization phase controlling capability are essential for
wireless communications applications. This work proposes a novel 1-bit
transmitarray element design at Ku band, which adopts the receiver–
transmitter structure with an active receiving dipole and a passive
asymmetric transmitting dipole. The 1-bit phase shift is achieved by
alternating two PIN diodes integrated on the active dipole to reverse its
current direction. To mitigate the influence of PIN diodes and reduce the
element insertion loss, a parasitic bypass dipole is added next to each dipole.
Element simulations show a low loss of only 1.0 dB is achieved. The dual- (a)
linear polarization capability is obtained by orthogonally interlacing two sets
of proposed receiver–transmitter structures. A 100-element transmitarray
prototype is designed, fabricated and measured. The measured gain is 18.3
dB at 12.2 GHz, corresponding to an aperture efficiency of 22.6%. The two-
dimensional beam scanning capability for independent dual-linear
polarization is experimentally verified, and the scan angle covers ±50°. The
measured maximum scan gain loss is 2.9 dB and 3.5 dB in the two principal
planes, respectively.
Index Terms—1-bit, antenna, dual-linear polarization, PIN diode,
(b) (c)
reconfigurable, transmitarray. Fig. 1. Geometry of the proposed linearly polarized 1-bit RTA element: (a)
perspective view, (b) top view, (c) bottom view.
I. INTRODUCTION
in [11]. Two-dimensional beam scanning within a ±50°angular range
High gain antennas with electronic beam scanning capability, such is obtained with an aperture efficiency of 14% at broadside. Two H-
as reconfigurable reflectarrays (RRAs), reconfigurable transmitarrays shaped slots are orthogonally placed to achieve polarization
(RTAs), and phased arrays, play an important role in various modern transformation, but it still only responds to a single linear polarization.
communications and radar systems. Among them, RTAs have A dual linearly-polarized transmitarray element with 1-bit phase
attracted great attentions in recent years. Compared to conventional resolution is proposed in [12]; however, the two polarization modes
phased arrays, RTAs remove transmit/receive modules to reduce the cannot operate simultaneously. In [13], the proposed 1-bit RTA
system cost, and utilize a spatial feeding mechanism to avoid the element achieves polarization transformation from a linear-polarized
complicated feeding network. Compared to RRAs, the feeding incidence to a RHCP or LHCP outgoing wave.
structure for RTAs is fully enclosed to avoid feed blockage. RTAs with independent dual-linear polarization can support double
A RTA is usually composed of a multilayer structure and offers the channel capacity in wireless communications or achieve two linearly
capability of producing a scanning high-gain pencil beam by properly
polarized independent scanning beams. Several dual-linear
tuning the element phases. The phase reconfigurability is generally
polarization RRA designs can be found in the literature [14]-[18]. As
obtained by integrating solid-state devices such as varactor diodes,
PIN diodes, and MEMS switches into RTA elements. Thus far most for transmitarrays, researches have focused on passive dual-linear
RTAs reported in the literature only manage to achieve phase tuning polarized designs [19]-[21]. Only a few publications on RTAs are
for single polarization [1]-[10]. A 1-bit linearly polarized RTA available that deal with the capability to independently control the
element at X band is presented in [1]-[2]. Two PIN diodes are dual-linear polarization phase. This design goal is achieved by
integrated into the O-slot patch to obtain a 180°phase shift with low oppositely arranging passive narrow patches and active 1-bit O-slot
insertion loss. A 400-element prototype is fabricated and measured to patches on both receiving and transmitting layers in [22], where the
achieve two-dimensional wide-angle beam scanning. A three-layer simulated results of a Ka-band array are given. Another novel design
RTA element with varactor-diode loaded patches for linear is proposed in [23]. Two square ring patches are utilized for receiving
polarization is proposed in [7], which achieves a 245°phase shift with and transmitting, respectively, which are excited by two sets of
less than 3 dB transmission insertion loss. The phase tuning range of orthogonally polarized transmission structures of U-shaped active
the element is extended to over 360°by using reflection-type phase resonators to achieve independent dual-linear polarization 1-bit phase
shifters [10], with insertion loss less than 2.5 dB in the specified tuning. The measured element insertion loss is around 1.8 dB at 5.9
frequency band. GHz.
Polarization transformation or switching is studied in the literature In this communication, a novel 1-bit dual-linear polarized RTA that
as well. A 1-bit sub-wavelength slot coupling RTA element is shown
operates at Ku band is introduced. The proposed asymmetric dipole
Manuscript received XXX, 2020; revised XXX; accepted XXX. Date of has a small footprint, so that an orthogonally interlaced arrangement
publication XXX. This work was supported in part by the Beijing National is possible. A parasitic bypass dipole is utilized to reduce the element
Research Center for Information Science and Technology (BNRist). insertion loss. The detailed RTA element design and simulations are
(Corresponding author: Shenheng Xu.)
discussed in Section II. Furthermore, a 100-element prototype is
Y. Wang, S. Xu, and F. Yang are with the Department of Electronic
Engineering, Tsinghua University, Beijing 100084, China (e-mail: designed, fabricated, and measured. The simulated and measured
[email protected]) results are presented in Section III, to experimentally verify the two-
Douglas H. Werner is with the Department of Electrical Engineering, The dimensional beam scanning capability for independent dual-linear
Pennsylvania State University, University Park, PA 16802, USA (e-mail: polarization. Finally, Session IV concludes this work.
[email protected])

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(a)
(a)

(b)
Fig. 3. Simulated current distributions at: (a) 10.8 GHz, (b) 12.25 GHz.

(b)
Fig. 2. Simulated element performance under normal incidence for two states:
(a) magnitude, (b) phase.

II. ELEMENT DESIGN AND SIMULATIONS

A. 1-bit Phasing Mechanism

The fundamental structure of the proposed RTA element, which is
capable of achieving 1-bit phase tuning, is illustrated in Fig. 1. The Fig. 4. Simulated element performance under oblique incidences for different
architecture adopts a receiver–transmitter structure with an active polarizations.
receiving dipole and a passive asymmetric transmitting dipole [21].
Both dipoles, separated by a common ground and connected by a can be better understood by observing the simulated current
metallized via-hole, are linearly polarized and aligned in the same distributions in Fig. 3. Both the active receiving dipole and the passive
direction. A shorter dipole as a passive parasitic bypass is added in asymmetric transmitting dipole resonate at 10.8 GHz. The receiver-
parallel next to each dipole element. Two PIN diodes are integrated on transmitter mechanism that enables the proper operation of the
the active receiving dipole, biased in opposite states. The 1-bit phasing transmitarray element is thus realized, and the transmission magnitude
mechanism is realized by alternatively switching one diode ON and loss of the element is 2.3 dB. The primary reason for the high insertion
the other OFF, so that the current excited on the active dipole is loss is the ohmic loss associated with the strong current flowing
reversed. through the PIN diodes in the ON state. After adding the parasitic
The detailed design parameters are as follows. The operating bypasses, an additional resonance at 12.25 GHz is introduced. The
frequency is 12.25 GHz, and the element periodicity is 12 mm (0.49λ0). current is mostly coupled to the parasitic dipoles, and the amount
The thickness of both dielectric substrates (εr = 3.5, tanδ = 0.0018) is flowing through the PIN diodes is significantly reduced. Consequently,
1.52 mm, and the bonding film has a dielectric constant of 2.8 and a the element insertion loss is considerably suppressed to only 0.8 dB at
thickness of 0.2 mm. The overall thickness of the element is 3.24 mm 12.25 GHz. The dual-resonance characteristic also enhances the
(0.13λ0). MACOM MADP-000907-14020 was chosen as the PIN bandwidth performance of the element. The simulated 3-dB frequency
diode. The PIN diode is modeled as a series resistance of R = 7.8 Ω bandwidth is 18.4%.
and inductance of L = 30 pH for the ON state, while a series The element performance under oblique incidences for different
capacitance of C = 0.025 pF and inductance of L = 30 pH is assumed polarizations is shown in Fig. 4. Under 30°oblique incidence for TE
for the OFF state. The geometrical parameters are optimized to be: L1 polarization, the element exhibits stable magnitude and phase
= 9.6 mm, L2 = 6.1 mm, W1 = 1.0 mm, W2 = 0.7 mm, and S = 1.3 mm. performance. For TM oblique incidence, a slight phase deviation for
The element performance under normal incidence was simulated the proposed element is observed.
using HFSS, with a periodic boundary condition to mimic an infinite
array. The simulated transmission magnitude and phase responses of B. Dual-linear Polarized Element Design
the element under normal incidence illumination are plotted in Fig. 2. The proposed dual-linear polarized 1-bit RTA element is designed
It is seen that the element produces a similar magnitude response with by orthogonally interlacing two sets of the receiver-transmitter
a 180°phase shift over a wide frequency band between the two states, structures, as illustrated in Fig. 5, where each set is responsive to one
which is due to the current reversal phasing mechanism. The polarization. The performance of the element without biasing circuits
magnitude of the insertion loss at 12.25 GHz is only 0.8 dB. is first simulated and analyzed. Due to the structural symmetry, only
It is obvious that the element exhibits a dual-resonance the magnitude and phase responses under a y-polarized normally
characteristic at 10.8 GHz and 12.25 GHz, as shown in Fig. 2(a). This incident wave are plotted in Fig. 6. By comparing them with those in

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(a)

(a)

(b)
Fig. 5. Geometry of four proposed dual-linear polarized 1-bit RTA elements
with biasing circuits: (a) perspective view, (b) top view.
(b)
Fig. 8. Photograph of the fabricated 1-bit dual-linear polarized RTA: (a) the
assembled prototype, (b) measurement setup in the near-field anechoic
chamber.

(a) (b)
Fig. 6. Simulated element performance for four states without biasing circuits
under a y-polarized normally incident wave: (a) magnitude, (b) phase. Note
that the first and second numbers refer to the operating states of the x- and y-
polarized dipoles, respectively.

Fig. 9. Simulated and measured gains of the y-polarized broadside beam.

Fig. 7. Simulated magnitude performance of the element with and without (a) (b)
biasing circuits. Fig. 10. Simulated and measured radiation patterns of the y-polarized
broadside beam at 12.2 GHz: (a) E-plane, (b) H-plane.
Fig. 2, it is obvious that the second receiver-transmitter structure does
not noticeably affect the element performance. The dual-resonance dipole, while a +1.3/−1.3 V DC biasing voltage is applied to both ends
feature is clearly observed, and the magnitude insertion losses are 2.4 of the active receiving dipole to control the diode states. The quarter-
dB and 0.9 dB at 10.8 GHz and 12.25 GHz respectively. The wavelength transformer on the receiving layer and open-ended radial
independent phase controlling capability with 1-bit phase quantization stubs on the film are designed to choke the RF leakage. The biasing
is also validated. The deviations of the element performance are point is positioned close to the zero point of the electric field at active
negligible when changing the operating state to the other polarization. receiving dipole to minimize the influence of the bias lines on the RF
The details of the proposed four dual-linear polarized 1-bit RTA performance. The simulated magnitude performance of the element
elements with biasing circuits are also presented in Fig. 5. There are with and without biasing circuits is compared in Fig. 7. Good isolation
two independent bias lines in each element, one for each polarization. of RF and DC signals at the center frequency is observed. Moreover,
For each receiver-transmitter structure, the middle portion of the the additional element insertion loss caused by the biasing circuits is
active receiving dipole is grounded through the passive transmitter small and deemed acceptable. At the design frequency, the simulated

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TABLE II
BEAM DIRECTIONS FOR DUAL-LINEAR POLARIZATION AT 12.2 GHZ
Beam Direction
Experiment
y-polarized x-polarized
I 30°, E-plane 0°, Broadside
II 30°, E-plane 30°, H-plane
III 50°, E-plane 30°, H-plane

Fig. 11. Measured radiation patterns of the y-polarized scanned beams in the
E-plane at 12.2 GHz.

Fig. 13. Measured y-polarized radiation patterns for experiment I and II at 12.2
GHz.

Fig. 12. Measured radiation patterns of the y-polarized scanned beams in the
H-plane at 12.2 GHz.
TABLE I
PERFORMANCE PARAMETERS OF SCANNED BEAMS
Beam E-plane H-plane
Direction Gain/dBi Side Lobe/dB Gain/dBi Side Lobe/dB
0° 18.3 −16.2 18.3 −16.2
10° 17.7 −12.0 17.7 −16.1
Fig. 14. Measured x-polarized radiation patterns for experiment II and III at
20° 16.9 −11.8 17.6 −10.7
12.2 GHz.
30° 16.7 −8.2 16.6 −9.0
40° 16.1 −8.6 15.1 −4.0 B. Radiation at Broadside and Beam-scanning Performance for
50° 15.4 −8.0 14.8 −4.0 Linear-polarization
The 1-bit RTA prototype illuminated by a y-polarized feed was
insertion loss is 1.0 dB. The cross-polarization performance of the measured in a near-field anechoic chamber. The simulated and
element is presented as well. At 12.25 GHz, the cross-polarization measured gains of the RTA versus frequency are presented in Fig. 9.
level is slightly higher but still below −15 dB. At 10.8 GHz, the cross- The measured maximum gain at 12.2 GHz is 18.3 dBi with an aperture
polarization performance deteriorates due to the influence of the efficiency of 22.6%, while the measured 3-dB gain bandwidth is
grounded via-holes. 11.5%. The difference compared to the simulated gain (19.5 dBi) is
mainly attributed to the additional loss caused by edge diffraction,
III. EXPERIMENTAL VERIFICATION fabrication errors and equivalent circuit modeling errors for the PIN
diodes. The simulated and measured broadside co- and cross-
A. Prototype and Fabrication polarized radiation patterns in both principal planes at 12.2 GHz are
shown in Fig. 10. The measured main beams are in good agreement
Based on the proposed 1-bit dual-linear polarized RTA element, a
with simulation. The measured half-power beamwidths (HPBWs) are
10×10 RTA prototype was designed and fabricated using printed
11.4°and 11.6°in the E- and H-plane, respectively. The measured first
circuit board (PCB) technology, as shown in Fig. 8. The effective
side lobe in the E-plane is −16.2 dB, and the cross-polarization level
aperture of the RTA is 120 mm×120 mm with 400 PIN diodes in total,
is −17.6 dB, which is higher than the simulated results. The main
which provide phase reconfigurability. A linear-polarized horn
reason for the discrepancy is the higher cross-pol component of the
antenna illuminates the aperture with an equivalent cos qθ (q = 5.7)
element due to the leakage currents on the bias lines, as shown in Fig.
pattern, where the F/D ratio is 0.78. To provide the phase controlling
7, which are not included in the array simulation model.
capability for each polarization, there are 8 40-pin connectors located
The measured radiation patterns for the y-polarized scanned beams
on the sides of the array, which are connected to the steering-logic
in the E-plane and H-plane are plotted in Figs. 11 and 12, respectively.
board. For each linear polarization, the phase shift of each element,
The key parameters are summarized in Table I. It is obvious that all
and thus, the states of PIN diodes, can be determined using the array
the measured radiation patterns of the scanned beams up to 50°are
theory to collimate a pencil beam in a given direction.
pointed in the desired directions. As expected, the measured gain

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