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2011 1 Homework Solution #1 (Ch.1-Ch.2)

The document contains solutions to homework problems on solid state physics and materials. It includes: 1) A calculation of the maximum packing fraction of atoms in a face-centered cubic lattice, which is 74%. 2) Calculations of the density of silicon and gallium arsenide using lattice constants and numbers of atoms per unit cell. 3) Explanations of Miller indices and directions in cubic crystal structures. 4) A derivation of the effective mass approximation for electron energy bands in solids.

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Min-Woo Choi
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69 views

2011 1 Homework Solution #1 (Ch.1-Ch.2)

The document contains solutions to homework problems on solid state physics and materials. It includes: 1) A calculation of the maximum packing fraction of atoms in a face-centered cubic lattice, which is 74%. 2) Calculations of the density of silicon and gallium arsenide using lattice constants and numbers of atoms per unit cell. 3) Explanations of Miller indices and directions in cubic crystal structures. 4) A derivation of the effective mass approximation for electron energy bands in solids.

Uploaded by

Min-Woo Choi
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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2011 1 Homework Solution #1 (Ch.1-Ch.

2)
1. Each corner atom in a cubic unit cell is shared with seven neighboring cells; thus each
unit cell contains 1/8 of a sphere at each of the eight corners for a total of one atom.
Similarly, the fcc cell contains half an atom at each of the six faces for a total of three.
Thus we have
Atoms per cell = 1 (corners) + 3 (faces) = 4
1
Nearest neighbor distance = (a 2)
2

Radius of each sphere =


1
4

a 2 
 a 2
3
1
 
3
4
Volume of each sphere =   4 a 2  
3 24

Maximum fraction of cell filled


no. of spheres  vol. of each sphere

total vol. of each cell



4   a 3 2 24 
3
a
 2
  74 percent filled
6
Therefore, if the atoms in an fcc lattice are packed as densely as possible, with no distance
between the outer edges of nearest neighbors, 74 percent of the volume is filled. This is a
relatively high percentage compared with some other lattice structures.
2. For Si: a=5.43 10-8 cm, 8 atoms/cell,
8 8
 8 3
 5 1022atoms/cm3
a 3
(5.43 10 )
5 1022 (atoms / cm 3 )  28.1( g / mole )
density =  2.33 g / cm 3
6.02 10 (atoms / mole )
23

For GaAs : a=5.65 10-8 cm, 4 each Ga, As atoms/cell

4 4
  2.22  1022atoms/cm3
 5.65 10 
3  3
a 8

2.22 1022  69.7  74.9 


density   5.33 g / cm 3
6.02 1023
3. (a) 3a : 3b: 3c 1/3a : 1/3b : 1/3c (bc ac ab) = [1 1 1]
3a : 2b: 2c 1/3a : 1/2b : 1/2c (2bc 3ac 3ab) = [2 3 3]

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111   111  1 11  11 1    1 11   11 1   1 1 1    1 1 1 
100   100   010  0 10   001  00 1 
(b)
110   110  1 10   1 10   011   0 11   01 1    0 1 1 
 101   101  10 1    10 1 
4. The electron momentum is p = mv = ħk. Then
1 1 p2 2 2
E  mv 2   k
2 2 m 2m
Thus the electron energy is parabolic with wave vector k. The electron mass is inversely
related to the curvature (second derivative) of the (E, k) relationship, since
d 2 E 2

dk 2 m
Although electrons in solids are not free, most energy bands are close to parabolic at their
minima (for conduction bands) or maxima (for valence bands). We can also approximate
effective mass near those band extrema from the curvature of the band.
mq 4
5. From equation E  we have
2 K 2 2
0.067  9.111031 1.6 1019 
4
mn q 4
E 
8   0 r  h2 8  8.85 1012 13.2   6.63 1034 
2 2 2

 8.34 1022 J  0.0052 eV


Thus the energy required to excite the donor electron from the n = 1 state to the free state
(n = ) is  5.2 meV. This corresponds to the energy difference Ec-Ed in Fig. 1 and is in
very close agreement with actual measured values.
6. For Si, ml  0.98m0 ; mt  0.19m0 from Appendix III.
There are six equivalent X valleys in the conduction band.
1/ 3
mn*  62 / 3 0.98  0.19   m0  1.1 m0
2
 
7. Since N d  ni , we can approximate n0  N d and
ni 2 2.25 1020
p0    2.25 103 cm 3
n0 1017
 EF  Ei  / kT
From equation n0  ni e , we have

n0 1017
EF  Ei  kT ln  0.0259ln  0.407 eV
ni 1.5 1010

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The resulting band diagram is :
Ec
EF
0.407eV
Ei

Ev

8. For Si, ml  0.98m0 ; mt  0.19m0 (Appendix III)


There are 6 equivalent X valleys in the conduction band.

1/ mn*  1/ 3(1/ m x  1/ m y  1/ m z )  1/ 3(1/ ml  2 / mt )


1 1 2 
1/ mn*    
3  0.98m0 0.19m0 
mn*  0.26m0

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