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SEMICONDUCTOR TECHNICAL DATA by MPSA44/D

    

NPN Silicon


Motorola Preferred Device
COLLECTOR
3

2
BASE

1
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol Value Unit
Collector – Emitter Voltage VCEO 400 Vdc CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Base Voltage VCBO 500 Vdc
Emitter – Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 300 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO 400 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage V(BR)CES 500 — Vdc
(IC = 100 µAdc, VBE = 0)
Collector – Base Breakdown Voltage V(BR)CBO 500 — Vdc
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO — 0.1 µAdc
(VCB = 400 Vdc, IE = 0)
Collector Cutoff Current ICES — 500 nAdc
(VCE = 400 Vdc, VBE = 0)
Emitter Cutoff Current IEBO — 0.1 µAdc
(VEB = 4.0 Vdc, IC = 0)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
MPSA44
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain(1) hFE —
(IC = 1.0 mAdc, VCE = 10 Vdc) 40 —
(IC = 10 mAdc, VCE = 10 Vdc) 50 200
(IC = 50 mAdc, VCE = 10 Vdc) 45 —
(IC = 100 mAdc, VCE = 10 Vdc) 40 —
Collector – Emitter Saturation Voltage(1) VCE(sat) Vdc
(IC = 1.0 mAdc, IB = 0.1 mAdc) — 0.4
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.5
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.75
Base – Emitter Saturation Voltage VBE(sat) — 0.75 Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS

Output Capacitance Cobo — 7.0 pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 130 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe 1.0 — —
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 MPSA44

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

160 0.5

140 TA = 125°C
0.4 IC = 1.0 mA IC = 10 mA IC = 50 mA
hFE, DC CURRENT GAIN

120 VCE = 10 V

100 0.3
TA = 25°C
25°C
80 0.2

60
0.1
40
–55°C
20 0
1.0 2.0 5.0 10 20 50 100 200 300 10 30 100 300 1.0 k 3.0 k 10 k 50 k
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (µA)

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

1.0 1000
TA = 25°C 1.0 ms 100 µs

IC, COLLECTOR CURRENT (mA)

0.8 VBE(sat) @ IC/IB = 10 300
200 TC = 25°C
1.0 s
V, VOLTAGE (VOLTS)

TA = 25°C
100
0.6 VBE(on) @ VCE = 10 V

20
0.4
10 CURRENT LIMIT
THERMAL LIMIT
0.2 VCE(sat) @ IC/IB = 10 SECOND BREAKDOWN LIMIT
2.0 VALID FOR DUTY CYCLE ≤ 10% MPSA44
0 1.0
0.1 0.3 1.0 3.0 10 30 100 300 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS)

Figure 3. “On” Voltages Figure 4. Active Region — Safe Operating Area

100 10
Cib
|h fe |, SMALL–SIGNAL CURRENT GAIN

50
C, CAPACITANCE (pF)

20

10 VCE = 10 V
Cob
f = 10 MHz
3.0 TA = 25°C
5.0
2.0

2.0 TA = 25°C 1.5

f = 1.0 MHz
1.0 1.0
0.3 0.5 1.0 3.0 10 30 100 300 0.1 0.2 0.3 1.0 3.0 10 30 100
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 5. Capacitance Figure 6. High Frequency Current Gain

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 MPSA44
10 Vin
+9.7 V
5.0
PW = 50 µS
DUTY CYCLE = 2.0%
2.0
t, TIME ( µs)

1.0 0

0.5 –4.0 V
VCC = 150 V
IC/IB = 10 VCC
0.2 TA = 25°C tr
RL
VBE(off) = 4.0 Vdc td
0.1 Vout
1.0 3.0 10 30 50 100
RB
IC, COLLECTOR CURRENT (mA) Vin
CS ≤ 4.0 pF*

Figure 7. Turn–On Switching Times and Test Circuit

10
Vin
5.0 +10.7 V
ts
2.0 PW = 50 µS
DUTY CYCLE = 2.0%
t, TIME ( µs)

1.0

0.5 tf
VCC = 150 V –11.4 V
IC/IB = 10 VCC
0.2 TA = 25°C
RL
0.1
1.0 3.0 10 30 50 100 Vout
IC, COLLECTOR CURRENT (mA) RB
Vin
CS ≤ 4.0 pF*

Figure 8. Turn–Off Switching Times and Test Circuit

* Total Shunt Capacitance or Test Jig and Connectors.

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 MPSA44
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

MPSA44

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*MPSA44/D*
6 ◊ MPSA44/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data