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Semiconductor KTB688: Technical Data

The document provides technical specifications for the KTB688 triple diffused PNP transistor. It is recommended for audio frequency amplifier output stages up to 45-50W. Key specs include: maximum collector current of -10A, collector-emitter breakdown voltage of -120V, DC current gain of 55-160, and maximum collector power dissipation of 80W at 25°C junction temperature. Electrical characteristics are provided, including cutoff currents, saturation voltage, transition frequency, and output capacitance.

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0% found this document useful (0 votes)
106 views3 pages

Semiconductor KTB688: Technical Data

The document provides technical specifications for the KTB688 triple diffused PNP transistor. It is recommended for audio frequency amplifier output stages up to 45-50W. Key specs include: maximum collector current of -10A, collector-emitter breakdown voltage of -120V, DC current gain of 55-160, and maximum collector power dissipation of 80W at 25°C junction temperature. Electrical characteristics are provided, including cutoff currents, saturation voltage, transition frequency, and output capacitance.

Uploaded by

Florian Ciprian
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR KTB688

TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION.


A Q B
K
FEATURES

F
I
ᴌComplementary to KTD718.

E
ᴌRecommended for 45ᴕ50W Audio Frequency

C
DIM MILLIMETERS
Amplifier Output Stage. A 15.9 MAX

J
H
B 4.8 MAX
C _ 0.3
20.0 +

G
D _ 0.3
2.0 +
D d 1.0+0.3/-0.25
E 2.0

L
F 1.0
MAXIMUM RATING (Ta=25ᴱ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO -120 V K 1.8 MAX
L _ 0.5
20.5 +
Collector-Emitter Voltage VCEO -120 V M 2.8
P _ 0.2
5.45 +
1 2 3
Emitter-Base Voltage VEBO -5 V Q Φ3.2 + _ 0.2
T 0.6+0.3/-0.1
1. BASE
Collector Current IC -10 A
2. COLLECTOR
Base Current IB -1 A 3. EMITTER

Collector Power Dissipation (Tc=25ᴱ) PC 80 W


Junction Temperature Tj 150 ᴱ TO-3P(N)
Storage Temperature Range Tstg -55ᴕ150 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -10 ỌA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 ỌA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -120 - - V
DC Current Gain hFE (Note) VCE=-5V, IC=-1A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 10 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 280 - pF
Note : hFE Classification R:55ᴕ110, O:80ᴕ160

1997. 1. 25 Revision No : 0 1/2


KTB688

I C - VCE Pc - Ta

COLLECTOR POWER DISSIPATION P C (W)


-10 100
COMMON EMITTER 1 Ta=Tc
COLLECTOR CURRENT I C (A)

Tc=25 C 1 INFINITE HEAT SINK


mA
mA

-8 0 80 2 300x300x2mm Al
-30 -200mA
00

HEAT SINK
-4

3 200x200x2mm Al
-6 60 HEAT SINK
-100mA 4 100x100x2mm Al
2 HEAT SINK
-4 40 3
-50mA 5 NO HEAT SINK
I B =-20mA 4
-2 20

0mA 5
0 0
0 -2 -4 -6 -8 -10 -12 -14 0 40 80 120 160 200 240

COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C)

VCE(sat) - I C SAFE OPERATING AREA


-30
-5
COLLECTOR-EMITTER SATURATION

I C MAX(PULSED) t=1ms
-3 COMMON EMITTER t=10ms
I C/I B =10 I C MAX(CONTINUOUS) t=100ms
-10 t=500ms
COLLECTOR CURRENT I C (A)

-1 DC
VOLTAGE VCE(sat) (V)

O
-5 Tc PE
-0.5 =2 RA
C 5 TI
-0.3 0 -3 C ON
=10
Tc
-0.1 Tc=25 C
Tc=-25 C -1
-0.05
-0.03 -0.5 SINGLE NONREPETITIVE

VCEO MAX
PULSE Tc=25 C
-0.3 CURVES MUST BE DERATED
-0.01 LINEARLY WITH INCREASE
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 IN TEMPERATURE
-0.1
COLLECTOR CURRENT I C (A)
-1 -3 -10 -30 -100 -300
COLLECTOR EMITTER VOLTAGE VCE (V)

h FE - I C
1k
COMMON EMITTER
500 VCE =-5V
300
DC CURRENT GAIN h FE

Tc=100 C

Tc=25 C
100 Tc=-25 C

50
30

10
-0.01 -0.03 -0.1 -0.3 -1 -3 -10

COLLECTOR CURRENT I C (A)

1997. 1. 25 Revision No : 0 2/2


This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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