2SK1342

Silicon N-Channel MOS FET

Application

High speed power switching

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Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter

Outline

TO-3P

G 1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
 2SK1342
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 900 V
Gate to source voltage VGSS ±30 V
Drain current ID 8 A
1
Drain peak current I D(pulse)* 20 A
Body to drain diode reverse drain current I DR 8 A
2
Channel dissipation Pch* 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
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2. Value at TC = 25°C

2
 2SK1342

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown V(BR)DSS 900 — — V I D = 10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS — — 250 µA VDS = 720 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 1.2 1.6 Ω I D = 4 A, VGS = 10 V *1
resistance
Forward transfer admittance
www.DataSheet4U.com |yfs| 3.5 5.5 — S I D = 4 A, VDS = 20 V *1
Input capacitance Ciss — 1730 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 700 — pF f = 1 MHz
Reverse transfer capacitance Crss — 310 — pF
Turn-on delay time t d(on) — 25 — ns I D = 4 A, VGS = 10 V,
Rise time tr — 135 — ns RL = 7.5 Ω
Turn-off delay time t d(off) — 185 — ns
Fall time tf — 130 — ns
Body to drain diode forward VDF — 0.9 — V I F = 8 A, VGS = 0
voltage
Body to drain diode reverse t rr — 900 — ns I F = 8 A, VGS = 0,
recovery time diF/dt = 100 A/µs
Note: 1. Pulse test

3
 2SK1342

Power vs. Temperature Derating Maximum Safe Operation Area

150 50

20
Channel Dissipation Pch (W)

a 10
10 are 10 µs

Drain Current ID (A)

his
t (o
n) 0
µs
100 5 in R DS 1
it on by

PW pe
m

D
a s
er ited

= atio
Op lim

O
2

10
is

m (T C
r

s
1

(1 = 2
n

Sh 5°
50 0.5

ot
)
0.2

C
)
0.1
Ta = 25°C
0.05
0 50 100 150 1 3 10 30 100 300 1,000
www.DataSheet4U.com Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

10 10
10 V
6V Pulse Test VDS = 20 V
8 8
Pulse Test
Drain Current ID (A)

Drain Current ID (A)

5V

6 6

4 4.5 V 4
75°C
2 2 TC = 25°C
VGS = 4 V –25°C

0 10 20 30 40 50 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

4
 2SK1342

Drain to Source Saturation Voltage Static Drain to Source on State

Drain to Source Saturation Voltage VDS (on) (V)

vs. Gate to Source Voltage Resistance vs. Drain Current

Static Drain to Source on State Resistance

20 5
Pulse Test VGS = 10 V
16 2
ID = 10 A
1
15 V

RDS (on) (Ω)

12
0.5
8
5A
0.2
4 Pulse Test
2A 0.1

0.05
0
www.DataSheet4U.com 4 8 12 16 20 0.2 0.5 1.0 2 5 10 20
Gate to Source Voltage VGS (V) Drain Current ID (A)

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Static Drain to Source on State Resistance

5 10
Forward Transfer Admittance yfs (S)

VDS = 20 V –25°C
VGS = 10 V 5 Pulse Test
4 TC = 25°C
Pulse Test

2 75°C
RDS (on) (Ω)

3 5A
ID = 10 A 1
2
0.5
2A
1
0.2

0 0.1
–40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5
Case Temperature TC (°C) Drain Current ID (A)

5
 2SK1342

Body to Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
5,000 10,000
di/dt = 100 A/µs,
Reverse Recovery Time t rr (ns)

Ta = 25°C, VGS = 0
2,000 Pulse Test
Ciss

Capacitance C (pF)
1,000
1,000

500 Coss

100 Crss
200

100 VGS = 0
f = 1 MHz
50 10
0.1
www.DataSheet4U.com 0.2 0.5 1 2 5 10 0 10 20 30 40 50
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

1,000 20 500
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

VDD = 600 V td (off)

800 400 V 16 200
Switching Time t (ns)

tf
250 V
100 tr
600 VGS 12
VDS
50
td (on)
400 8
20
600 V ID = 8 A
200 4 .
400 V 10 VGS = 10 V, VDD =. 30 V
VDD = 250 V PW = 5 µs, duty < 1%
0 5
0 20 40 60 80 100 0.1 0.2 0.5 1 2 5 10
Gate Charge Qg (nc) Drain Current ID (A)

6
 2SK1342

Reverse Drain Current vs.

Sourse to Drain Voltage
10
Pulse Test

Reverse Dratin Current IDR (A)

8

2 5 V, 10 V
VGS = 0, –5 V

0
www.DataSheet4U.com 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3

TC = 25°C
D=1
1.0
0.5

0.3 0.2
0.1 θch–c (t) = γS (t) · θch–c
0.1 θch–c = 1.25°C/W, TC = 25°C
0.05
PDM
0.02
0.03 D = PW
1 T
0.0 Pulse PW
hot T
1S
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (s)

Switching Time Test Circuit Waveforms

Vin Monitor
90%
Vout Monitor

D.U.T Vin 10%

RL
Vout 10% 10%
50 Ω
Vin VDD
. 90% 90%
10 V =. 30 V
td (on) tr td (off) tf

7
 Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0
1.6

1.4 Max 2.0

2.8
18.0 ± 0.5

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1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO-3P
JEDEC —
EIAJ Conforms
Weight (reference value) 5.0 g
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