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Silicon N Channel MOSFET Tetrode BF 998: Features

The document summarizes the specifications and characteristics of the BF 998 silicon N-channel MOSFET tetrode transistor. It is designed for low-noise, gain-controlled input stages up to 1 GHz. The summary provides maximum ratings, packaging information, electrical characteristics including DC parameters, AC parameters such as transconductance and capacitance values, and graphs of characteristics like power gain and noise figure versus gate voltage. Test circuits are shown for evaluating parameters like power gain and noise figure.

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83 views8 pages

Silicon N Channel MOSFET Tetrode BF 998: Features

The document summarizes the specifications and characteristics of the BF 998 silicon N-channel MOSFET tetrode transistor. It is designed for low-noise, gain-controlled input stages up to 1 GHz. The summary provides maximum ratings, packaging information, electrical characteristics including DC parameters, AC parameters such as transconductance and capacitance values, and graphs of characteristics like power gain and noise figure versus gate voltage. Test circuits are shown for evaluating parameters like power gain and noise figure.

Uploaded by

ha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Silicon N Channel MOSFET Tetrode BF 998

Features
● Short-channel transistor
with high S/C quality factor
● For low-noise, gain-controlled
input stages up to 1 GHz

Type Marking Ordering Code Pin Configuration Package1)


(tape and reel) 1 2 3 4
BF 998 MO Q62702-F1129 S D G2 G1 SOT-143

Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 12 V
Drain current ID 30 mA
Gate 1/gate 2 peak source current ± IG1/2SM 10
Total power dissipation, TS < 76 ˚C Ptot 200 mW
Storage temperature range Tstg – 55 … + 150 ˚C
Channel temperature Tch 150

Thermal Resistance
Junction - soldering point Rth JS < 370 K/W

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1 04.96


BF 998

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC Characteristics
Drain-source breakdown voltage V(BR) DS 12 – – V
ID = 10 µA, – VG1S = – VG2S = 4 V
Gate 1-source breakdown voltage ± V(BR) G1SS 8 – 12
± IG1S = 10 mA, VG2S = VDS = 0

Gate 2-source breakdown voltage ± V(BR) G2SS 8 – 12


± IG2S = 10 mA, VG1S = VDS = 0

Gate 1-source leakage current ± IG1SS – – 50 nA


± VG1S = 5 V, VG2S = VDS = 0

Gate 2-source leakage current ± IG2SS – – 50


± VG2S = 5 V, VG1S = VDS = 0

Drain current IDSS 2 – 18 mA


VDS = 8 V, VG1S = 0, VG2S = 4 V
Gate 1-source pinch-off voltage – VG1S(p) – – 2.5 V
VDS = 8 V, VG2S = 4 V, ID = 20 µA
Gate 2-source pinch-off voltage – VG2S(p) – – 2
VDS = 8 V, VG1S = 0, ID = 20 µA

Semiconductor Group 2
BF 998

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

AC Characteristics
Forward transconductance gfs – 24 – mS
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 kHz
Gate 1 input capacitance Cg1ss – 2.1 2.5 pF
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Gate 2 input capacitance Cg2ss – 1.2 –
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Reverse transfer capacitance Cdg1 – 25 – fF
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Output capacitance Cdss – 1.05 – pF
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Power gain Gps – 28 – dB
(test circuit 1)
VDS = 8 V, ID = 10 mA, f = 200 MHz,
GG = 2 mS, GL = 0.5 mS, VG2S = 4 V
Power gain Gps – 20 –
(test circuit 2)
VDS = 8 V, ID = 10 mA, f = 800 MHz,
GG = 3.3 mS, GL = 1 mS, VG2S = 4 V
Noise figure F – 0.6 – dB
(test circuit 1)
VDS = 8 V, ID = 10 mA, f = 200 MHz,
GG = 2 mS, GL = 0.5 mS, VG2S = 4 V
Noise figure F – 1 –
(test circuit 2)
VDS = 8 V, ID = 10 mA, f = 800 MHz,
GG = 3.3 mS, GL = 1 mS, VG2S = 4 V
Control range ∆Gps 40 – –
(test circuit 2)
VDS = 8 V, VG2S = 4 … – 2 V
f = 800 MHz

Semiconductor Group 3
BF 998

Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS)


VG2S = 4 V

Gate 1 forward transconductance Gate 1 forward transconductance


gfs1 = f (VG1S) gfs1 = f (VG2S)
VDS = 8 V, IDSS = 10 mA, f = 1 kHz VDS = 8 V, IDSS = 10 mA, f = 1 kHz

Semiconductor Group 4
BF 998

Gate 1 forward transconductance Gate 1 input capacitance Cg1ss = f (VG1S)


gfs1 = f (ID) VG2S = 4 V, VDS = 8 V, IDSS = 10 mA,
VDS = 8 V, IDSS = 10 mA, f = 1 kHz f = 1 MHz

Gate 2 input capacitance C g2ss = f (VG2S) Output capacitance Cdss = f (VDS)


VG1S = 0 V, VDS = 8 V VG1S = 0 V, VG2S = 4 V
IDSS = 10 mA, f = 1 MHz IDSS = 10 mA, f = 1 MHz

Semiconductor Group 5
BF 998

Drain current ID = f (VG1S) Power gain Gps = f (VG2S)


VDS = 8 V VDS = 8 V, VG1S = 0, IDSS = 10 mA,
f = 200 MHz (see test circuit 1)

Noise figure F = f (VG2S) Power gain Gps = f (VG2S)


VDS = 8 V, VG1S = 0, IDSS = 10 mA, VDS = 8 V, VG1S = 0, IDSS = 10 mA,
f = 200 MHz (see test circuit 1) f= 800 MHz (see test circuit 2)

Semiconductor Group 6
BF 998

Noise figure F = f (VG2S) Gate 1 input admittance y11s


VDS = 8 V, VG1S = 0, IDSS = 10 mA, VDS = 8 V, VG2S = 4 V, VG1S = 0,
f = 800 MHz (see test circuit 2) IDSS = 10 mA (common-source)

Gate 1 forward transfer admittance y 21s Output admittance y 22s


VDS = 8 V, VG2S = 4 V, VG1S = 0 VDS = 8 V, VG2S = 4 V, VG1S = 0
IDSS = 10 mA (common-source) IDSS = 10 mA (common-source)

Semiconductor Group 7
BF 998

Test circuit 1 for power gain and noise figure


f = 200 MHz, GG = 2 mS, GL = 0.5 mS

Test circuit 2 for power gain and noise figure


f = 800 MHz, GG = 3.3 mS, GL = 1 mS

Semiconductor Group 8

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