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Characteristics of Unijunction Transistor (Ujt)

This document describes an experiment to investigate the characteristics of a unijunction transistor (UJT). The objectives are to determine the intrinsic stand-off ratio and interbase resistance of a UJT. The procedure involves constructing a circuit with a UJT and measuring voltages and currents at different points to calculate the stand-off ratio and resistance according to given equations. Tables are included to record the experimental data and results.

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Ressie Felices
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141 views3 pages

Characteristics of Unijunction Transistor (Ujt)

This document describes an experiment to investigate the characteristics of a unijunction transistor (UJT). The objectives are to determine the intrinsic stand-off ratio and interbase resistance of a UJT. The procedure involves constructing a circuit with a UJT and measuring voltages and currents at different points to calculate the stand-off ratio and resistance according to given equations. Tables are included to record the experimental data and results.

Uploaded by

Ressie Felices
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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CHARACTERISTICS OF UNIJUNCTION TRANSISTOR (UJT)

OBJECTIVES :

1. To investigate the emitter-base conducting characteristics of a UJT.


2. To be able to determine the intrinsic stand-off ratio.

MATERIALS :

1 - Resistor, 220 Ω, 1 Watt


1 - Resistor, 100K Ω, 1 Watt
1 - Potentiometer, 10K Ω
1 - UJT, 2N2648
2 - VOM
1 - Regulated DC Power Supply

PROCEDURES :
1. Construct the experimental circuit as shown in Figure 1, taking great care
that the correct terminals of the UJT are connected in the circuit properly.
2. Adjust the emitter supply voltage divider to minimum value with respect to
Base 1 (B1). Power on and adjust the supply voltage to 12 Volts.
3. Slowly increase the VCB voltage until emitter current commences to flow.
Carefully note the VCB voltage at this point. In case of doubt, it would be
wise to recheck this value and to allow for the instrument pointer damping.
Note : Do not allow the emitter current (IC) to exceed 20 µA.
4. Measure and record in Tables 1 and 2 the values of V CB, VBB, IS and IC.
5. Calculate the intrinsic stand-off ratio using the equation

0.5
𝜂 = 𝑉𝐶𝐵 −
𝑉𝐵𝐵

where : η is the intrinsic stand-off ratio


VCB is the emitter base voltage at the point of conduction
VBB is the base 1 to base 2 voltage

6. Calculate the interbase resistance from the equation

𝑅𝐵𝐵 = 𝜂𝑉
𝐼 𝐵𝐵
−𝐼
𝑆 𝐶

where : RBB is the interbase resistance


IS is the supply current (ampere)
IC is the emitter current (ampere)
CIRCUIT DIAGRAM :

IS

220 Ω
100K Ω
10K Ω IC
E B2 12 V
VBB
B1
V CB

Figure 1

DATA AND RESULTS :

VCB at peak point VBB at peak point


Intrinsic Stand-off Ratio
voltage (Volts) voltage (Volts)

Table 1. Intrinsic stand-off ratio.

Emitter Current Supply Current Interbase Resistance


(Ampere) (Ampere) (Ohms)

Table 2. Interbase resistance.

QUESTIONS :
1. What is UJT?
2. Give one specific application of UJT and describe its operation.

OBSERVATIONS :

CONCLUSION :

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