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Pseudo Nmos Logoc - Good Read

Pseudo-nMOS logic, also known as ratioed logic, aims to reduce the number of devices compared to complementary CMOS by using a permanently on pMOS transistor as the pull-up device instead of a pMOS. This allows the pMOS capacitance to be taken off the input. However, pseudo-nMOS gates draw static power whenever the output is low. Improved techniques like replica biasing and ganged CMOS were developed to address issues like insufficient voltage swing at low voltages. Differential cascode voltage switch logic (DCVSL) is another circuit family that uses cascode transistors to improve speed and reduce static power.
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0% found this document useful (0 votes)
1K views31 pages

Pseudo Nmos Logoc - Good Read

Pseudo-nMOS logic, also known as ratioed logic, aims to reduce the number of devices compared to complementary CMOS by using a permanently on pMOS transistor as the pull-up device instead of a pMOS. This allows the pMOS capacitance to be taken off the input. However, pseudo-nMOS gates draw static power whenever the output is low. Improved techniques like replica biasing and ganged CMOS were developed to address issues like insufficient voltage swing at low voltages. Differential cascode voltage switch logic (DCVSL) is another circuit family that uses cascode transistors to improve speed and reduce static power.
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Pseudo-nMOS Logic

( Ratioed Logic)

10: Circuit Families 1


Introduction
• What makes a circuit fast?
– I = C dV/dt -> tpd  (C/I) DV
– low capacitance
– high current
– small swing B 4

• Logical effort is proportional to C/I A 4


Y
• pMOS are the enemy! 1 1

– High capacitance for a given current


• Can we take the pMOS capacitance off the input?
• Various circuit families try to do this…

10: Circuit Families 2


Ratioed Logic
VDD VDD VDD

Resistive Depletion PMOS


Load RL Load VT < 0 Load
VSS
F F F
In1 In1 In1
In2 PDN In2 PDN In2 PDN
In3 In3 In3

VSS VSS VSS


(a) resistive load (b) depletion load NMOS (c) pseudo-NMOS

Goal: to reduce the number of devices over complementary CMOS

3
Ratioed Logic
VDD

• N transistors + Load
Resistive
• VOH = V DD
Load RL

• VOL = RPN
F RPN + RL

In1 • Assymetrical response


In2 PDN
In3 • Static power consumption

• tpL= 0.69 RLCL


VSS

4
Active Loads
VDD VDD

Depletion PMOS
Load VT < 0 Load
VSS
F F
In1 In1
In2 PDN In2 PDN
In3 In3

VSS VSS

depletion load NMOS pseudo-NMOS

5
Pseudo-nMOS
• In the old days, nMOS processes had no pMOS
– Instead, use pull-up transistor that is always ON
• In CMOS, use a pMOS that is always ON
– Ratio issue
1.8

– Make pMOS
load about ¼ effective strength of 1.5

P/2
pulldown I
network 1.2

Vout 0.9
P = 24

ds

Vout 0.6
P = 14
16/2 0.3
P=4
Vin
0
0 0.3 0.6 0.9 1.2 1.5 1.8
Vin

10: Circuit Families 6


Pseudo-nMOS

10: Circuit Families 7


Pseudo-NMOS VTC

10: Circuit Families 8


Pseudo-nMOS Design

Static Power
Size of PMOS VOL tpLH
Dissipation
4 0.693 V 564 mW 14 ps
2 0.273 V 298 mW 56 ps
1 0.133 V 160 mW 123 ps
0.5 0.064 V 80 mW 268 ps
0.25 0.031 V 41 mW 569 ps

10: Circuit Families 9


Pseudo-nMOS Gates
• Design for unit current on output
Y
to compare with unit inverter. inputs

• pMOS fights nMOS f

• Iout = 4I/3 – I/3


Inverter NAND2 NOR2

gu = gu = gu =
gd = g = gd =
gavg = Y gd = gavg =
avg
pu = A pu =
Y Y pu =
A pd = B pd = A B pd =
pavg = pavg = pavg =

10: Circuit Families 10


Pseudo-nMOS Gates
• Design for unit current on output
Y
to compare with unit inverter. inputs
• pMOS fights nMOS f

Inverter NAND2 NOR2

gu = 4/3 gu = 8/3 gu = 4/3


gd = 4/9 2/3 g = 8/9 gd = 4/9
gavg = 8/9 Y gd = 16/9 gavg = 8/9
2/3 avg 2/3
pu = 6/3 A 8/3 pu = 10/3
Y Y pu = 10/3
A 4/3 pd = 6/9 B 8/3 pd = 10/9 A 4/3 B 4/3 pd = 10/9
pavg = 12/9 pavg = 20/9 pavg = 20/9

10: Circuit Families 11


Pseudo-nMOS Design
• Ex: Design a k-input AND gate using pseudo-
nMOS. Estimate the delay driving a fanout of
Pseudo-nMOS
H In 1 1
Y
H
Ink 1
• G = 1 * 8/9 = 8/9
• F = GBH = 8H/9 4 2H  8k  13
3 9
• P = 1 + (4+8k)/9 = (8k+13)/9
• N=2
• D = NF1/N + P =
10: Circuit Families 12
Pseudo-nMOS Power
• Pseudo-nMOS draws power whenever Y = 0
– Called static power P = IDDVDD
– A few mA / gate * 1M gates would be a problem
– Explains why nMOS went extinct
• Use pseudo-nMOS sparingly for wide NORs
• Turn off pMOS
en when not in use
Y
A B C

10: Circuit Families 13


Ratio Example
• The chip contains a 32 word x 48 bit ROM
– Uses pseudo-nMOS decoder and bitline pullups
– On average, one wordline and 24 bitlines are
high
• Find static power drawn by the ROM
– Ion-p = 36 mA, VDD = 1.0 V
Ppull-up  VDD I pull-up  36 μW
Pstatic  (31  24) Ppull-up  1.98 mW
• Solution:

10: Circuit Families 14


Pseudo-NMOS Design
• Pseudo-nMOS gates will not operate correctly
if VOL>VIL of the driven gate.
• This is most likely in the SF corner.
• Conservative design requires extra weak
pMOS.
• Another choice is to use replica biasing.
• Idea comes from analog design.
• Replica biasing allows 1/3 the current ratio
rather than the conservative ¼ ratio of earlier.
10: Circuit Families 15
Replica Biasing

10: Circuit Families 16


Ganged CMOS

10: Circuit Families 17


Ganged CMOS

A B N1 P1 N2 P2 Y
0 0 OFF ON OFF ON 1
0 1 OFF ON ON OFF ~0
1 0 ON OFF OFF ON ~0
1 1 ON OFF ON OFF 0

10: Circuit Families 18


Improved Loads
VDD

M1 M1 >> M2
Enable M2

CL
A B C D

Adaptive Load
19
Improved Loads

10: Circuit Families 20


Improved Loads (2)

Differential Cascode Voltage Switch Logic (DCVSL)

21
DCVSL Example

Out

Out

B B B B

A A

XOR-NXOR gate

22
DCVSL Example

23
DCVSL Transient Response

10: Circuit Families 24


Pass-Transistor Logic
B

Switch Out A
Out
Inputs

Network B
B

• N transistors
• No static consumption

25
Example: AND Gate

10: Circuit Families 26


NMOS-Only Logic

10: Circuit Families 27


NMOS-Only Switch

28
NMOS Only Logic:
Level Restoring Transistor

• Advantage: Full Swing


• Restorer adds capacitance, takes away pull down current at X
• Ratio problem

29
Restorer Sizing

10: Circuit Families 30


LEAP
• LEAn integration with Pass transistors
• Get rid of pMOS transistors
– Use weak pMOS feedback to pull fully high
– Ratio constraint
S
A
S L Y
B

10: Circuit Families 31

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