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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SC2331 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220 package. It has a low collector saturation voltage and fast switching speed, making it suitable for switching regulators, DC-DC converters, and high frequency power amplifiers. The document provides maximum ratings, characteristics including voltage and current parameters, and switching times for the transistor. It also includes a diagram of the package outline and pin configuration.

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46 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SC2331 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220 package. It has a low collector saturation voltage and fast switching speed, making it suitable for switching regulators, DC-DC converters, and high frequency power amplifiers. The document provides maximum ratings, characteristics including voltage and current parameters, and switching times for the transistor. It also includes a diagram of the package outline and pin configuration.

Uploaded by

ErnandesTorresBarbosa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2331

DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed

APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 100 V

VCEO Collector-emitter voltage Open base 100 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 2.0 A

ICM Collector current-Peak 4.0 A

IB Base current 1.0 A

Ta=25 1.5
PT Total power dissipation W
TC=25 15

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2331

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH 100 V

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V

VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V

ICBO Collector cut-off current VCB=100V; IE=0 10 µA

IEBO Emitter cut-off current VEB=5V; IC=0 10 µA

hFE-1 DC current gain IC=0.1A ; VCE=5V 40

hFE-2 DC current gain IC=1A ; VCE=5V 40 200

Switching times resistive load

ton Turn-on time 0.5 µs

IC=1.0A IB1=- IB2=0.1A


ts Storage time 1.5 µs
RL=50A;VCCB50V

tf Fall time 0.5 µs

hFE-2 Classifications

M L K

40-80 60-120 100-200

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2331

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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