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Transistor count
The transistor count is the number of transistors in an electronic
device. It typically refers to the number of MOSFETs (metal-oxide-
semiconductor field-effect transistors, or MOS transistors) on an
integrated circuit (IC) chip, as all modern ICs use MOSFETs. It is the most
common measure of IC complexity (although the majority of transistors in
modern microprocessors are contained in the cache memories, which
consist mostly of the same memory cell circuits replicated many times).
The rate at which MOS transistor counts have increased generally follows
Moore's law, which observed that the transistor count doubles
approximately every two years.

As of 2019, the largest transistor count in a commercially available

microprocessor is 39.54  billion MOSFETs, in AMD's Zen 2 based Epyc
Rome, which is a 3D integrated circuit (with eight dies in a single package)
fabricated using TSMC's 7  nm FinFET semiconductor manufacturing
process.[1][2] As of 2020, the highest transistor count in a graphics
processing unit (GPU) is Nvidia's GA100 Ampere with 54  billion Plot of MOS transistor counts for microprocessors against dates of
MOSFETs, manufactured using TSMC's 7  nm process.[3] As of 2019, the in­tro­duction. The curve shows counts doubling every two years,
highest transistor count in any IC chip was Samsung's 1  terabyte eUFS per Moore's law
(3D-stacked) V-NAND flash memory chip, with 2  trillion floating-gate
MOSFETs (4  bits per transistor).[4] As of 2020, the highest transistor
count in any IC chip is a deep learning engine called the Wafer Scale Engine 2 by Cerebras, using a special design to route around any
non-functional core on the device; it has 2.6 trillion MOSFETs, manufactured using TSMC's 7 nm FinFET process.[5][6][7][8][9]

Number of MOSFETs

Year Component Name

(in billions)
microprocessor

2019 Epyc Rome 39

(commercial)
2020 GPU GA100 Ampere 54
2019 any IC chip Samsung's V-NAND chip 2000
2020 any IC chip Wafer Scale Engine 2 2600
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In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count as of
2016 is the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the
processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the
transistors."[10] To compare, the smallest computer, as of 2018 dwarfed by a grain of rice, has on the order of 100,000 transistors. Early
experimental solid state computers had as few as 130 transistors, but used large amounts of diode logic. The first carbon nanotube
computer has 178 transistors and is 1-bit one-instruction set computer, later one is 16-bit (while the instruction set is 32-bit RISC-V).

In terms of the total number of transistors in existence, it has been estimated that a total of 13 sextillion (1.3 × 1022) MOSFETs have
been manufactured worldwide between 1960 and 2018. MOSFETs account for at least 99.9% of all transistors, the majority of which
have been used for NAND flash memory manufactured during the early 21st century. This makes the MOSFET the most widely
manufactured device in history.[11]

Contents
Transistor count
Microprocessors
GPUs
FPGA
Memory
Transistor computers
Logic functions
Parallel systems
Other devices
Transistor density
MOSFET nodes
See also
Notes
References
External links

Transistor count

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Among the earliest products to use transistors were portable transistor radios, introduced in 1954, which
typically used 4 to 8 transistors, often advertising the number on the radio's case. However, early junction
transistors were relatively bulky devices that were difficult to manufacture on a mass-production basis,
limiting the transistor counts and restricting their usage to a number of specialised applications.[12]

The MOSFET (MOS transistor), invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959,[13]
was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of
uses.[12] The MOSFET made it possible to build high-density integrated circuits (ICs),[14] enabling Moore's
law[15][16] and very large-scale integration.[17] Atalla first proposed the concept of the MOS integrated
circuit (MOS IC) chip in 1960, followed by Kahng in 1961, both noting that the MOSFET's ease of
fabrication made it useful for integrated circuits.[12][18] The earliest experimental MOS IC to be
demonstrated was a 16-transistor chip built by Fred Heiman and Steven Hofstein at RCA Laboratories in
1962.[16] Further large-scale integration was made possible with an improvement in MOSFET
semiconductor device fabrication, the CMOS process, developed by Chih-Tang Sah and Frank Wanlass at
Fairchild Semiconductor in 1963.[19]

As the chip fabrication industry moves to newer processes, the number of transistors per unit area keeps
Part of an IBM 7070 card
rising.
The transistor count and transistor density are often reported as technical achievements.[20]
cage populated with
Standard Modular System
cards
Microprocessors

A microprocessor incorporates the functions of a computer's central processing unit on a single integrated
circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its
memory, and provides results as output.

The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors.[21] The 20-bit
MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be
the first microprocessor.[22] It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy
until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor. It was made possible with an improvement
in MOSFET design, MOS silicon-gate technology (SGT), developed in 1968 at Fairchild Semiconductor by Federico Faggin, who went on
to use MOS SGT technology to develop the 4004 with Marcian Hoff, Stanley Mazor and Masatoshi Shima at Intel.[21]

All chips over e.g. a million transistors have much memory, usually cache memories in level 1 and 2 or more levels, accounting for most
transistors on microprocessors in modern times, where large caches have become the norm. The level 1 caches of the Pentium Pro die
accounted for over 14% of its transistors, while the much larger L2 cache was on a separate die, but on-package, so it's not included in
the transistor count. Later chips included more levels, L2 or even L3 on-chip. The last DEC Alpha chip made has 90% of it for cache.[23]

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While Intel's i960CA small cache of 1 KB, at about 50,000 transistors, isn't a big part of the chip, it alone would have been very large in
early microprocessors. In the ARM 3 chip, with 4 KB, the cache was over 63% of the chip, and in the Intel 80486 its larger cache is only
over a third of it because the rest of the chip is more complex. So cache memories are the largest factor, except for in early chips with
smaller caches or even earlier chips with no cache at all. Then the inherent complexity, e.g. number of instructions, is the dominant
factor, more than e.g. the memory the registers of the chip represent.

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)
74,442 (5,360 excl. ROM &
MP944 (20-bit, 6-chip, 28 chips total) 1970[22][a] Garrett AiResearch ? ?
RAM)[24][25]

Intel 4004 (4-bit, 16-pin) 2,250 1971 Intel 10,000 nm 12 mm2

TMX 1795 (?-bit, 24-pin) 3,078[26] 1971 Texas Instruments ? 30 mm2

Intel 8008 (8-bit, 18-pin) 3,500 1972 Intel 10,000 nm 14 mm2

NEC μCOM-4 (4-bit, 42-pin) 2,500[27][28] 1973 NEC 7,500 nm[29] ?

Toshiba TLCS-12 (12-bit) 11,000+[30] 1973 Toshiba 6,000 nm 32 mm2

Intel 4040 (4-bit, 16-pin) 3,000 1974 Intel 10,000 nm 12 mm2

Motorola 6800 (8-bit, 40-pin) 4,100 1974 Motorola 6,000 nm 16 mm2

Intel 8080 (8-bit, 40-pin) 6,000 1974 Intel 6,000 nm 20 mm2

TMS 1000 (4-bit, 28-pin) 8,000 1974[31] Texas Instruments 8,000 nm 11 mm2

MOS Technology 6502 (8-bit, 40-pin) 4,528[b][32] 1975 MOS Technology 8,000 nm 21 mm2
Intersil IM6100 (12-bit, 40-pin; clone of PDP-8) 4,000 1975 Intersil ? ?
CDP 1801 (8-bit, 2-chip, 40-pin) 5,000 1975 RCA ? ?

RCA 1802 (8-bit, 40-pin) 5,000 1976 RCA 5,000 nm 27 mm2

Zilog Z80 (8-bit, 4-bit ALU, 40-pin) 8,500[c] 1976 Zilog 4,000 nm 18 mm2

Intel 8085 (8-bit, 40-pin) 6,500 1976 Intel 3,000 nm 20 mm2

TMS9900 (16-bit) 8,000 1976 Texas Instruments ? ?
Bellmac-8 (8-bit) 7,000 1977 Bell Labs 5,000 nm ?

Motorola 6809 (8-bit with some 16-bit features, 40-pin) 9,000 1978 Motorola 5,000 nm 21 mm2

Intel 8086 (16-bit, 40-pin) 29,000 1978 Intel 3,000 nm 33 mm2

Zilog Z8000 (16-bit) 17,500[33] 1979 Zilog ? ?

Intel 8088 (16-bit, 8-bit data bus) 29,000 1979 Intel 3,000 nm 33 mm2

Motorola 68000 (16/32-bit, 32-bit registers, 16-bit ALU) 68,000[34] 1979 Motorola 3,500 nm 44 mm2
Intel 8051 (8-bit, 40-pin) 50,000 1980 Intel ? ?

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)

WDC 65C02 11,500[35] 1981 WDC 3,000 nm 6 mm2

ROMP (32-bit) 45,000 1981 IBM 2,000 nm ?

Intel 80186 (16-bit, 68-pin) 55,000 1982 Intel 3,000 nm 60 mm2

Intel 80286 (16-bit, 68-pin) 134,000 1982 Intel 1,500 nm 49 mm2

WDC 65C816 (8/16-bit) 22,000[36] 1983 WDC 3,000 nm[37] 9 mm2

NEC V20 63,000 1984 NEC ? ?

Motorola 68020 (32-bit; 114 pins used) 190,000[38] 1984 Motorola 2,000 nm 85 mm2

Intel 80386 (32-bit, 132-pin; no cache) 275,000 1985 Intel 1,500 nm 104 mm2

ARM 1 (32-bit; no cache) 25,000[38] 1985 Acorn 3,000 nm 50 mm2

Novix NC4016 (16-bit) 16,000[39] 1985[40] Harris Corporation 3,000 nm[41] ?

SPARC MB86900 (32-bit; no cache) 110,000[42] 1986 Fujitsu 1,200 nm ?

NEC V60[43] (32-bit; no cache) 375,000 1986 NEC 1,500 nm ?

ARM 2 (32-bit, 84-pin; no cache) 27,000[44][38] 1986 Acorn 2,000 nm 30.25 mm2

Z80000 (32-bit; very small cache) 91,000 1986 Zilog ? ?

NEC V70[43] (32-bit; no cache) 385,000 1987 NEC 1,500 nm ?

Hitachi Gmicro/200[45] 730,000 1987 Hitachi 1,000 nm ?

Motorola 68030 (32-bit, very small caches) 273,000 1987 Motorola 800 nm 102 mm2

TI Explorer's 32-bit Lisp machine chip 553,000[46] 1987 Texas Instruments 2,000 nm[47] ?

DEC WRL MultiTitan 180,000[48] 1988 DEC WRL 1,500 nm 61 mm2

Intel i960 (32-bit, 33-bit memory subsystem, no cache) 250,000[49] 1988 Intel 1,500 nm[50] ?

Intel i960CA (32-bit, cache) 600,000[50] 1989 Intel 800 nm 143 mm2

Intel i860 (32/64-bit, 128-bit SIMD, cache, VLIW) 1,000,000[51] 1989 Intel ? ?

Intel 80486 (32-bit, 4 KB cache) 1,180,235 1989 Intel 1000 nm 173 mm2

ARM 3 (32-bit, 4 KB cache) 310,000 1989 Acorn 1,500 nm 87 mm2

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)

Motorola 68040 (32-bit, 8 KB caches) 1,200,000 1990 Motorola 650 nm 152 mm2

R4000 (64-bit, 16 KB of caches) 1,350,000 1991 MIPS 1,000 nm 213 mm2

ARM 6 (32-bit, no cache for this 60 variant) 35,000 1991 ARM 800 nm ?

Hitachi SH-1 (32-bit, no cache) 600,000[52] 1992[53] Hitachi 800 nm 10 mm2

Intel i960CF (32-bit, cache) 900,000[50] 1992 Intel ? 125 mm2

DEC Alpha 21064 (64-bit, 290-pin; 16 KB of
1,680,000 1992 DEC 750 nm 233.52 mm2
caches)

Hitachi HARP-1 (32-bit, cache) 2,800,000[54] 1993 Hitachi 500 nm 267 mm2

Pentium (32-bit, 16 KB of caches) 3,100,000 1993 Intel 800 nm 294 mm2

ARM700 (32-bit; 8 KB cache) 578,977[55] 1994 ARM 700 nm 68.51 mm2

MuP21 (21-bit,[56] 40-pin; includes video) 7,000[57] 1994 Offete Enterprises 1200 nm ?

Motorola 68060 (32-bit, 16 KB of caches) 2,500,000 1994 Motorola 600 nm 218 mm2

PowerPC 601 (32-bit, 32 KB of caches) 2,800,000[58] 1994 Apple/IBM/Motorola 600 nm 121 mm2

SA-110 (32-bit, 32 KB of caches) 2,500,000[38] 1995 Acorn/DEC/Apple 350 nm 50 mm2

Pentium Pro (32-bit, 16 KB of caches;[59] L2 cache

5,500,000[60] 1995 Intel 500 nm 307 mm2
on-package, but on separate die)

AMD K5 (32-bit, caches) 4,300,000 1996 AMD 500 nm 251 mm2

Hitachi SH-4 (32-bit, caches) 10,000,000[61] 1997 Hitachi 200 nm[62] 42 mm2[63]

Pentium II Klamath (32-bit, 64-bit SIMD, caches) 7,500,000 1997 Intel 350 nm 195 mm2

AMD K6 (32-bit, caches) 8,800,000 1997 AMD 350 nm 162 mm2

F21 (21-bit; includes e.g. video) 15,000 1997[57] Offete Enterprises ? ?

140,000 (48,000 excl.

AVR (8-bit, 40-pin; w/memory) 1997 Nordic VLSI/Atmel ? ?
memory[64])

Pentium II Deschutes (32-bit, large cache) 7,500,000 1998 Intel 250 nm 113 mm2

ARM 9TDMI (32-bit, no cache) 111,000[38] 1999 Acorn 350 nm 4.8 mm2

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)

Pentium III Katmai (32-bit, 128-bit SIMD, caches) 9,500,000 1999 Intel 250 nm 128 mm2

Emotion Engine (64-bit, 128-bit SIMD, cache) 13,500,000[65] 1999 Sony/Toshiba 180 nm[66] 240 mm2[67]

Pentium II Mobile Dixon (32-bit, caches) 27,400,000 1999 Intel 180 nm 180 mm2

AMD K6-III (32-bit, caches) 21,300,000 1999 AMD 250 nm 118 mm2

AMD K7 (32-bit, caches) 22,000,000 1999 AMD 250 nm 184 mm2

Gekko (32-bit, large cache) 21,000,000[68] 2000 IBM/Nintendo 180 nm 43 mm2

Pentium III Coppermine (32-bit, large cache) 21,000,000 2000 Intel 180 nm 80 mm2

Pentium 4 Willamette (32-bit, large cache) 42,000,000 2000 Intel 180 nm 217 mm2

SPARC64 V (64-bit, large cache) 191,000,000[69] 2001 Fujitsu 130 nm[70] 290 mm2

Pentium III Tualatin (32-bit, large cache) 45,000,000 2001 Intel 130 nm 81 mm2

Pentium 4 Northwood (32-bit, large cache) 55,000,000 2002 Intel 130 nm 145 mm2

Itanium 2 McKinley (64-bit, large cache) 220,000,000 2002 Intel 180 nm 421 mm2
DEC Alpha 21364 (64-bit, 946-pin, SIMD, very
152,000,000[23] 2003 DEC 180 nm 397 mm2
large caches)

Barton (32-bit, large cache) 54,300,000 2003 AMD 130 nm 101 mm2

AMD K8 (64-bit, large cache) 105,900,000 2003 AMD 130 nm 193 mm2

Itanium 2 Madison 6M (64-bit) 410,000,000 2003 Intel 130 nm 374 mm2

Pentium 4 Prescott (32-bit, large cache) 112,000,000 2004 Intel 90 nm 110 mm2

SPARC64 V+ (64-bit, large cache) 400,000,000[71] 2004 Fujitsu 90 nm 294 mm2

Itanium 2 (64-bit;9 MB cache) 592,000,000 2004 Intel 130 nm 432 mm2

Pentium 4 Prescott-2M (32-bit, large cache) 169,000,000 2005 Intel 90 nm 143 mm2

Pentium D Smithfield (32-bit, large cache) 228,000,000 2005 Intel 90 nm 206 mm2
Xenon (64-bit, 128-bit SIMD, large cache) 165,000,000 2005 IBM 90 nm ?

Cell (32-bit, cache) 250,000,000[72] 2005 Sony/IBM/Toshiba 90 nm 221 mm2

Pentium 4 Cedar Mill (32-bit, large cache) 184,000,000 2006 Intel 65 nm 90 mm2
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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)

Pentium D Presler (32-bit, large cache) 362,000,000 2006 Intel 65 nm 162 mm2
Core 2 Duo Conroe (dual-core 64-bit, large
291,000,000 2006 Intel 65 nm 143 mm2
caches)

Dual-core Itanium 2 (64-bit, SIMD, large caches) 1,700,000,000[73] 2006 Intel 90 nm 596 mm2

AMD K10 quad-core 2M L3 (64-bit, large caches) 463,000,000[74] 2007 AMD 65 nm 283 mm2

ARM Cortex-A9 (32-bit, (optional) SIMD, caches) 26,000,000[75] 2007 ARM 45 nm 31 mm2
Core 2 Duo Wolfdale (dual-core 64-bit, SIMD,
411,000,000 2007 Intel 45 nm 107 mm2
caches)

POWER6 (64-bit, large caches) 789,000,000 2007 IBM 65 nm 341 mm2

Core 2 Duo Allendale (dual-core 64-bit, SIMD,
169,000,000 2007 Intel 65 nm 111 mm2
large caches)

Uniphier 250,000,000[76] 2007 Matsushita 45 nm ?

SPARC64 VI (64-bit, SIMD, large caches) 540,000,000 2007[77] Fujitsu 90 nm 421 mm2
Core 2 Duo Wolfdale 3M (dual-core 64-bit, SIMD,
230,000,000 2008 Intel 45 nm 83 mm2
large caches)

Core i7 (quad-core 64-bit, SIMD, large caches) 731,000,000 2008 Intel 45 nm 263 mm2
AMD K10 quad-core 6M L3 (64-bit, SIMD, large
758,000,000[74] 2008 AMD 45 nm 258 mm2
caches)

Atom (32-bit, large cache) 47,000,000 2008 Intel 45 nm 24 mm2

SPARC64 VII (64-bit, SIMD, large caches) 600,000,000 2008[78] Fujitsu 65 nm 445 mm2

Six-core Xeon 7400 (64-bit, SIMD, large caches) 1,900,000,000 2008 Intel 45 nm 503 mm2
Six-core Opteron 2400 (64-bit, SIMD, large
904,000,000 2009 AMD 45 nm 346 mm2
caches)

SPARC64 VIIIfx (64-bit, SIMD, large caches) 760,000,000[79] 2009 Fujitsu 45 nm 513 mm2

SPARC T3 (16-core 64-bit, SIMD, large caches) 1,000,000,000[80] 2010 Sun/Oracle 40 nm 377 mm2

Six-core Core i7 (Gulftown) 1,170,000,000 2010 Intel 32 nm 240 mm2

POWER7 32M L3 (8-core 64-bit, SIMD, large
1,200,000,000 2010 IBM 45 nm 567 mm2
caches)

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)

Quad-core z196[81] (64-bit, very large caches) 1,400,000,000 2010 IBM 45 nm 512 mm2
Quad-core Itanium Tukwila (64-bit, SIMD, large
2,000,000,000[82] 2010 Intel 65 nm 699 mm2
caches)
Xeon Nehalem-EX (8-core 64-bit, SIMD, large
2,300,000,000[83] 2010 Intel 45 nm 684 mm2
caches)

SPARC64 IXfx (64-bit, SIMD, large caches) 1,870,000,000[84] 2011 Fujitsu 40 nm 484 mm2
Quad-core + GPU Core i7 (64-bit, SIMD, large
1,160,000,000 2011 Intel 32 nm 216 mm2
caches)
Six-core Core i7/8-core Xeon E5

2,270,000,000[85] 2011 Intel 32 nm 434 mm2

(Sandy Bridge-E/EP) (64-bit, SIMD, large caches)
Xeon Westmere-EX (10-core 64-bit, SIMD, large
2,600,000,000 2011 Intel 32 nm 512 mm2
caches)

Atom "Medfield" (64-bit) 432,000,000[86] 2012 Intel 32 nm 64 mm2

SPARC64 X (64-bit, SIMD, caches) 2,990,000,000[87] 2012 Fujitsu 28 nm 600 mm2

AMD Bulldozer (8-core 64-bit, SIMD, caches) 1,200,000,000[88] 2012 AMD 32 nm 315 mm2
Quad-core + GPU AMD Trinity (64-bit, SIMD,
1,303,000,000 2012 AMD 32 nm 246 mm2
caches)
Quad-core + GPU Core i7 Ivy Bridge (64-bit,
1,400,000,000 2012 Intel 22 nm 160 mm2
SIMD, caches)

POWER7+ (8-core 64-bit, SIMD, 80 MB L3 cache) 2,100,000,000 2012 IBM 32 nm 567 mm2

Six-core zEC12 (64-bit, SIMD, large caches) 2,750,000,000 2012 IBM 32 nm 597 mm2

Itanium Poulson (8-core 64-bit, SIMD, caches) 3,100,000,000 2012 Intel 32 nm 544 mm2

Xeon Phi (61-core 32-bit, 512-bit SIMD, caches) 5,000,000,000[89] 2012 Intel 22 nm 720 mm2
Apple A7 (dual-core 64/32-bit ARM64, "mobile
1,000,000,000 2013 Apple 28 nm 102 mm2
SoC", SIMD, caches)
Six-core Core i7 Ivy Bridge E (64-bit, SIMD,
1,860,000,000 2013 Intel 22 nm 256 mm2
caches)

POWER8 (12-core 64-bit, SIMD, caches) 4,200,000,000 2013 IBM 22 nm 650 mm2

Xbox One main SoC (64-bit, SIMD, caches) 5,000,000,000 2013 Microsoft/AMD 28 nm 363 mm2

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)
Quad-core + GPU Core i7 Haswell (64-bit, SIMD,
1,400,000,000[90] 2014 Intel 22 nm 177 mm2
caches)
Apple A8 (dual-core 64/32-bit ARM64 "mobile
2,000,000,000 2014 Apple 20 nm 89 mm2
SoC", SIMD, caches)

Core i7 Haswell-E (8-core 64-bit, SIMD, caches) 2,600,000,000[91] 2014 Intel 22 nm 355 mm2
Apple A8X (tri-core 64/32-bit ARM64 "mobile
3,000,000,000[92] 2014 Apple 20 nm 128 mm2
SoC", SIMD, caches)
Xeon Ivy Bridge-EX (15-core 64-bit, SIMD,
4,310,000,000[93] 2014 Intel 22 nm 541 mm2
caches)

Xeon Haswell-E5 (18-core 64-bit, SIMD, caches) 5,560,000,000[94] 2014 Intel 22 nm 661 mm2
Quad-core + GPU GT2 Core i7 Skylake K (64-bit,
1,750,000,000 2015 Intel 14 nm 122 mm2
SIMD, caches)
Dual-core + GPU Iris Core i7 Broadwell-U (64-bit,
1,900,000,000[95] 2015 Intel 14 nm 133 mm2
SIMD, caches)

14 nm
96 mm2

Apple A9 (dual-core 64/32-bit ARM64 "mobile (Samsung) (Samsung)

2,000,000,000+ 2015 Apple
SoC", SIMD, caches)
16 nm
104.5 mm2

(TSMC) (TSMC)
Apple A9X (dual core 64/32-bit ARM64 "mobile
3,000,000,000+ 2015 Apple 16 nm 143.9 mm2
SoC", SIMD, caches)

IBM z13 (64-bit, caches) 3,990,000,000 2015 IBM 22 nm 678 mm2

IBM z13 Storage Controller 7,100,000,000 2015 IBM 22 nm 678 mm2

SPARC M7 (32-core 64-bit, SIMD, caches) 10,000,000,000[96] 2015 Oracle 20 nm ?

Qualcomm Snapdragon 835 (octa-core 64/32-bit

3,000,000,000[97][98] 2016 Qualcomm 10 nm 72.3 mm2
ARM64 "mobile SoC", SIMD, caches)
Core i7 Broadwell-E (10-core 64-bit, SIMD,
3,200,000,000[99] 2016 Intel 14 nm 246 mm2[100]
caches)
Apple A10 Fusion (quad-core 64/32-bit ARM64
3,300,000,000 2016 Apple 16 nm 125 mm2
"mobile SoC", SIMD, caches)
HiSilicon Kirin 960 (octa-core 64/32-bit ARM64
4,000,000,000[101] 2016 Huawei 16 nm 110.00 mm2
"mobile SoC", SIMD, caches)

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)

Xeon Broadwell-E5 (22-core 64-bit, SIMD, caches) 7,200,000,000[102] 2016 Intel 14 nm 456 mm2

Xeon Phi (72-core 64-bit, 512-bit SIMD, caches) 8,000,000,000 2016 Intel 14 nm 683 mm2
Gisselquist
Zip CPU (32-bit, for FPGAs) 1,286 6-LUTs[103] 2016 ? ?
Technology
Qualcomm Snapdragon 845 (octa-core 64/32-bit
5,300,000,000[104] 2017 Qualcomm 10 nm 94 mm2
ARM64 "mobile SoC", SIMD, caches)
Qualcomm Snapdragon 850 (octa-core 64/32-bit
5,300,000,000[105] 2017 Qualcomm 10 nm 94 mm2
ARM64 "mobile SoC", SIMD, caches)
Apple A11 Bionic (hexa-core 64/32-bit ARM64
4,300,000,000 2017 Apple 10 nm 89.23 mm2
"mobile SoC", SIMD, caches)

Zeppelin SoC Ryzen (64-bit, SIMD, caches) 4,800,000,000[106] 2017 AMD 14 nm 192 mm2

Ryzen 5 1600 Ryzen (64-bit, SIMD, caches) 4,800,000,000[107] 2017 AMD 14 nm 213 mm2

Ryzen 5 1600 X Ryzen (64-bit, SIMD, caches) 4,800,000,000[108] 2017 AMD 14 nm 213 mm2

IBM z14 (64-bit, SIMD, caches) 6,100,000,000 2017 IBM 14 nm 696 mm2

IBM z14 Storage Controller (64-bit) 9,700,000,000 2017 IBM 14 nm 696 mm2
HiSilicon Kirin 970 (octa-core 64/32-bit ARM64
5,500,000,000[109] 2017 Huawei 10 nm 96.72 mm2
"mobile SoC", SIMD, caches)
Xbox One X (Project Scorpio) main SoC (64-bit,
7,000,000,000[110] 2017 Microsoft/AMD 16 nm 360 mm2[110]
SIMD, caches)
Xeon Platinum 8180 (28-core 64-bit, SIMD,
8,000,000,000[111] 2017 Intel 14 nm ?
caches)

POWER9 (64-bit, SIMD, caches) 8,000,000,000 2017 IBM 14 nm 695 mm2

Freedom U500 Base Platform Chip (E51, 4×U54)
250,000,000[112] 2017 SiFive 28 nm ~30 mm2
RISC-V (64-bit, caches)

SPARC64 XII (12-core 64-bit, SIMD, caches) 5,450,000,000[113] 2017 Fujitsu 20 nm 795 mm2
Apple A10X Fusion (hexa-core 64/32-bit ARM64
4,300,000,000[114] 2017 Apple 10 nm 96.40 mm2
"mobile SoC", SIMD, caches)

Centriq 2400 (64/32-bit, SIMD, caches) 18,000,000,000[115] 2017 Qualcomm 10 nm 398 mm2

AMD Epyc (32-core 64-bit, SIMD, caches) 19,200,000,000 2017 AMD 14 nm 768 mm2

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)
HiSilicon Kirin 710 (octa-core ARM64 "mobile
5,500,000,000[116] 2018 Huawei 12 nm ?
SoC", SIMD, caches)
Apple A12 Bionic (hexa-core ARM64 "mobile
6,900,000,000[117][118] 2018 Apple 7 nm 83.27 mm2
SoC", SIMD, caches)
HiSilicon Kirin 980 (octa-core ARM64 "mobile
6,900,000,000[119] 2018 Huawei 7 nm 74.13 mm2
SoC", SIMD, caches)
Qualcomm Snapdragon 8cx / SCX8180 (octa-core
8,500,000,000[120] 2018 Qualcomm 7 nm 112 mm2
ARM64 "mobile SoC", SIMD, caches)
Qualcomm Snapdragon 855 (octa-core 64/32-bit
6,700,000,000[121] 2019 Qualcomm 7 nm 73 mm²
ARM64 "mobile SoC", SIMD, caches)
Qualcomm Snapdragon 865 (octa-core 64/32-bit
10,300,000,000[122] 2020 Qualcomm 7 nm 83.54 mm2[123]
ARM64 "mobile SoC", SIMD, caches)
Apple A12X Bionic (octa-core 64/32-bit ARM64
10,000,000,000[124] 2018 Apple 7 nm 122 mm2
"mobile SoC", SIMD, caches)

Fujitsu A64FX (64/32-bit, SIMD, caches) 8,786,000,000[125] 2018[126] Fujitsu 7 nm ?

Tegra Xavier SoC (64/32-bit) 9,000,000,000[127] 2018 Nvidia 12 nm 350 mm2

AMD Ryzen 7 3700X (64-bit, SIMD, caches, I/O 7 & 12 nm
5,990,000,000[128][d] 2019 AMD 199 (74+125) mm2
die) (TSMC)

HiSilicon Kirin 990 4G 8,000,000,000[129] 2019 Huawei 7 nm 90.00 mm2

Apple A13 (hexa-core 64-bit ARM64 "mobile SoC",
8,500,000,000[130][131] 2019 Apple 7 nm 98.48 mm2
SIMD, caches)
AMD Ryzen 9 3900X (64-bit, SIMD, caches, I/O 7 & 12 nm
9,890,000,000[1][2] 2019 AMD 273 mm2
die) (TSMC)

HiSilicon Kirin 990 5G 10,300,000,000[132] 2019 Huawei 7 nm 113.31 mm2

AWS Graviton2 (64-bit, 64-core ARM-based,
30,000,000,000 2019 Amazon 7 nm ?
SIMD, caches)[133][134]
7 & 12 nm
AMD Epyc Rome (64-bit, SIMD, caches) 39,540,000,000[1][2] 2019 AMD 1008 mm2
(TSMC)

TI Jacinto TDA4VM (ARM A72, DSP, SRAM) 3,500,000,000 [135] 2020 Texas Instruments 16 nm

Apple A14 Bionic (hexa-core 64-bit ARM64

11,800,000,000[136] 2020 Apple 5 nm 88 mm2
"mobile SoC", SIMD, caches)

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MOS
Date of

Processor MOS transistor count

introduction
Designer process
Area (mm2)
(nm)
Apple M1 (octa-core 64-bit ARM64 SoC, SIMD,
16,000,000,000[137] 2020 Apple 5 nm 119 mm2
caches)

HiSilicon Kirin 9000 15,300,000,000[138][139] 2020 Huawei 5 nm 114 mm2

GPUs

A graphics processing unit (GPU) is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the
building of images in a frame buffer intended for output to a display.

The designer refers to the technology company that designs the logic of the integrated circuit chip (such as Nvidia and AMD). The
manufacturer refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry
(such as TSMC and Samsung Semiconductor). The transistor count in a chip is dependent on a manufacturer's fabrication process, with
smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.

The random-access memory (RAM) that comes with GPUs (such as VRAM, SGRAM or HBM) greatly increase the total transistor count,
with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15 billion
FinFETs (16 nm) in the GPU in addition to 16 GB of HBM2 memory, totaling about 150 billion MOSFETs on the graphics card.[140] The
following table does not include the memory. For memory transistor counts, see the Memory section below.

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MOS transistor Date of MOS

Processor Designer(s) Manufacturer(s) Area Ref
count introduction process

µPD7220 GDC 40,000 1982 NEC NEC 5,000 nm [141]

ARTC HD63484 60,000 1984 Hitachi Hitachi [142]

CBM Agnus 21,000 1985 Commodore CSG 5,000 nm [143][144]

YM7101 VDP 100,000 1988 Yamaha, Sega Yamaha [145]

Tom & Jerry 750,000 1993 Flare IBM [145]

VDP1 1,000,000 1994 Sega Hitachi 500 nm [146][147]

Sony GPU 1,000,000 1994 Toshiba LSI 500 nm [148][149][150]

NV1 1,000,000 1995 Nvidia, Sega SGS 500 nm 90 mm2 [146]

Reality Coprocessor 2,600,000 1996 SGI NEC 350 nm 81 mm2 [151]

PowerVR 1,200,000 1996 VideoLogic NEC 350 nm [152]

Voodoo Graphics 1,000,000 1996 3dfx TSMC 500 nm [153][154]

Voodoo Rush 1,000,000 1997 3dfx TSMC 500 nm [153][154]

NV3 3,500,000 1997 Nvidia SGS, TSMC 350 nm 90 mm2 [155][156]

PowerVR2 CLX2 10,000,000 1998 VideoLogic NEC 250 nm 116 mm2 [61][157][158][63]

i740 3,500,000 1998 Intel, Real3D Real3D 350 nm

Voodoo 2 4,000,000 1998 3dfx TSMC 350 nm [153][154]

Voodoo Rush 4,000,000 1998 3dfx TSMC 350 nm

Riva TNT 7,000,000 1998 Nvidia TSMC 350 nm [153][156]

PowerVR2 PMX1 6,000,000 1999 VideoLogic NEC 250 nm [159]

Rage 128 8,000,000 1999 ATI TSMC, UMC 250 nm 70 mm2 [154]

Voodoo 3 8,100,000 1999 3dfx TSMC 250 nm [160]

Graphics
43,000,000 1999 Sony, Toshiba Sony, Toshiba 180 nm 279 mm2 [68][66][65][67]
Synthesizer

NV5 15,000,000 1999 Nvidia TSMC 250 nm [154]

NV10 17,000,000 1999 Nvidia TSMC 220 nm 111 mm2 [161][156]

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MOS transistor Date of MOS

Processor Designer(s) Manufacturer(s) Area Ref
count introduction process

Voodoo 4 14,000,000 2000 3dfx TSMC 220 nm [153][154]

NV11 20,000,000 2000 Nvidia TSMC 180 nm 65 mm2 [154]

NV15 25,000,000 2000 Nvidia TSMC 180 nm 81 mm2 [154]

Voodoo 5 28,000,000 2000 3dfx TSMC 220 nm [153][154]

R100 30,000,000 2000 ATI TSMC 180 nm 97 mm2 [154]

Flipper 51,000,000 2000 ArtX NEC 180 nm 106 mm2 [68][162]

PowerVR3 KYRO 14,000,000 2001 Imagination ST 250 nm

[153][154]
PowerVR3 KYRO II 15,000,000 2001 Imagination ST 180 nm

NV2A 60,000,000 2001 Nvidia TSMC 150 nm [153][163]

NV20 57,000,000 2001 Nvidia TSMC 150 nm 128 mm2

R200 60,000,000 2001 ATI TSMC 150 nm 68 mm2

NV25 63,000,000 2002 Nvidia TSMC 150 nm 142 mm2

R300 107,000,000 2002 ATI TSMC 150 nm 218 mm2

[154]
R360 117,000,000 2003 ATI TSMC 150 nm 218 mm2

NV38 135,000,000 2003 Nvidia TSMC 130 nm 207 mm2

R480 160,000,000 2004 ATI TSMC 130 nm 297 mm2

NV40 222,000,000 2004 Nvidia IBM 130 nm 305 mm2

Xenos 232,000,000 2005 ATI TSMC 90 nm 182 mm2 [164][165]

RSX Reality
300,000,000 2005 Nvidia, Sony Sony 90 nm 186 mm2 [166][167]
Synthesizer

G70 303,000,000 2005 Nvidia TSMC, Chartered 110 nm 333 mm2 [154]

R520 321,000,000 2005 ATI TSMC 90 nm 288 mm2

R580 384,000,000 2006 ATI TSMC 90 nm 352 mm2

G80 681,000,000 2006 Nvidia TSMC 90 nm 480 mm2

G86 Tesla 210,000,000 2007 Nvidia TSMC 80 nm 127 mm2

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MOS transistor Date of MOS

Processor Designer(s) Manufacturer(s) Area Ref
count introduction process

G84 Tesla 289,000,000 2007 Nvidia TSMC 80 nm 169 mm2

R600 700,000,000 2007 ATI TSMC 80 nm 420 mm2

G92 754,000,000 2007 Nvidia TSMC, UMC 65 nm 324 mm2

G98 Tesla 210,000,000 2008 Nvidia TSMC 65 nm 86 mm2

RV710 242,000,000 2008 ATI TSMC 55 nm 73 mm2

G96 Tesla 314,000,000 2008 Nvidia TSMC 55 nm 121 mm2

G94 Tesla 505,000,000 2008 Nvidia TSMC 65 nm 240 mm2

RV730 514,000,000 2008 ATI TSMC 55 nm 146 mm2

RV670 666,000,000 2008 ATI TSMC 55 nm 192 mm2

RV770 956,000,000 2008 ATI TSMC 55 nm 256 mm2

RV790 959,000,000 2008 ATI TSMC 55 nm 282 mm2 [168][154]

GT200b Tesla 1,400,000,000 2008 Nvidia TSMC, UMC 55 nm 470 mm2 [154]

GT200 Tesla 1,400,000,000 2008 Nvidia TSMC 65 nm 576 mm2 [169][154]

GT218 Tesla 260,000,000 2009 Nvidia TSMC 40 nm 57 mm2

GT216 Tesla 486,000,000 2009 Nvidia TSMC 40 nm 100 mm2

GT215 Tesla 727,000,000 2009 Nvidia TSMC 40 nm 144 mm2 [154]

RV740 826,000,000 2009 ATI TSMC 40 nm 137 mm2

Juniper RV840 1,040,000,000 2009 ATI TSMC 40 nm 166 mm2

Cypress RV870 2,154,000,000 2009 ATI TSMC 40 nm 334 mm2 [170]

AMD (formerly
Cedar RV810 292,000,000 2010 TSMC 40 nm 59 mm2
ATI)

Redwood RV830 627,000,000 2010 AMD TSMC 40 nm 104 mm2

[154]
GF106 Fermi 1,170,000,000 2010 Nvidia TSMC 40 nm 238 mm2

Barts RV940 1,700,000,000 2010 AMD TSMC 40 nm 255 mm2

Cayman RV970 2,640,000,000 2010 AMD TSMC 40 nm 389 mm2

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MOS transistor Date of MOS

Processor Designer(s) Manufacturer(s) Area Ref
count introduction process

GF100 Fermi 3,200,000,000 March 2010 Nvidia TSMC 40 nm 526 mm2 [171]

GF110 Fermi 3,000,000,000 November 2010 Nvidia TSMC 40 nm 520 mm2 [171]

GF119 Fermi 292,000,000 2011 Nvidia TSMC 40 nm 79 mm2

Caicos RV910 370,000,000 2011 AMD TSMC 40 nm 67 mm2

GF108 Fermi 585,000,000 2011 Nvidia TSMC 40 nm 116 mm2 [154]

Turks RV930 716,000,000 2011 AMD TSMC 40 nm 118 mm2

GF104 Fermi 1,950,000,000 2011 Nvidia TSMC 40 nm 332 mm2

Tahiti 4,312,711,873 2011 AMD TSMC 28 nm 365 mm2 [172]

GK107 Kepler 1,270,000,000 2012 Nvidia TSMC 28 nm 118 mm2

Cape Verde 1,500,000,000 2012 AMD TSMC 28 nm 123 mm2

[154]
GK106 Kepler 2,540,000,000 2012 Nvidia TSMC 28 nm 221 mm2

Pitcairn 2,800,000,000 2012 AMD TSMC 28 nm 212 mm2

GK104 Kepler 3,540,000,000 2012 Nvidia TSMC 28 nm 294 mm2 [173]

GK110 Kepler 7,080,000,000 2012 Nvidia TSMC 28 nm 561 mm2 [174][175]

Oland 1,040,000,000 2013 AMD TSMC 28 nm 90 mm2

[154]
Bonaire 2,080,000,000 2013 AMD TSMC 28 nm 160 mm2
Durango (Xbox
4,800,000,000 2013 AMD TSMC 28 nm 375 mm2 [176][177]
One)
Liverpool
Unknown 2013 AMD TSMC 28 nm 348 mm2 [178]
(PlayStation 4)

Hawaii 6,300,000,000 2013 AMD TSMC 28 nm 438 mm2 [154]

GM107 Maxwell 1,870,000,000 2014 Nvidia TSMC 28 nm 148 mm2

GM206 Maxwell 2,940,000,000 2014 Nvidia TSMC 28 nm 228 mm2

TSMC,
Tonga 5,000,000,000 2014 AMD 28 nm 366 mm2
GlobalFoundries

GM204 Maxwell 5,200,000,000 2014 Nvidia TSMC 28 nm 398 mm2

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MOS transistor Date of MOS

Processor Designer(s) Manufacturer(s) Area Ref
count introduction process

GM200 Maxwell 8,000,000,000 2015 Nvidia TSMC 28 nm 601 mm2

Fiji 8,900,000,000 2015 AMD TSMC 28 nm 596 mm2

Samsung,
Polaris 11 "Baffin" 3,000,000,000 2016 AMD 14 nm 123 mm2 [154][179]
GlobalFoundries

GP108 Pascal 4,400,000,000 2016 Nvidia TSMC 16 nm 200 mm2 [154]

Durango 2 (Xbox
5,000,000,000 2016 AMD TSMC 16 nm 240 mm2 [180]
One S)
Neo (PlayStation 4
5,700,000,000 2016 AMD TSMC 16 nm 325 mm2 [181]
Pro)
Polaris 10 Samsung,
5,700,000,000 2016 AMD 14 nm 232 mm2 [182]
"Ellesmere" GlobalFoundries

GP104 Pascal 7,200,000,000 2016 Nvidia TSMC 16 nm 314 mm2 [154]

GP100 Pascal 15,300,000,000 2016 Nvidia TSMC, Samsung 16 nm 610 mm2 [183]

GP108 Pascal 1,850,000,000 2017 Nvidia Samsung 14 nm 74 mm2 [154]

Samsung,
Polaris 12 "Lexa" 2,200,000,000 2017 AMD 14 nm 101 mm2 [154][179]
GlobalFoundries

GP107 Pascal 3,300,000,000 2017 Nvidia Samsung 14 nm 132 mm2 [154]

Scorpio (Xbox One

6,600,000,000 2017 AMD TSMC 16 nm 367 mm2 [176][184]
X)

GP102 Pascal 11,800,000,000 2017 Nvidia TSMC, Samsung 16 nm 471 mm2 [154]

Samsung,
Vega 10 12,500,000,000 2017 AMD 14 nm 484 mm2 [185]
GlobalFoundries

GV100 Volta 21,100,000,000 2017 Nvidia TSMC 12 nm 815 mm2 [186]

TU106 Turing 10,800,000,000 2018 Nvidia TSMC 12 nm 445 mm2

Vega 20 13,230,000,000 2018 AMD TSMC 7 nm 331 mm2 [154]

TU104 Turing 13,600,000,000 2018 Nvidia TSMC 12 nm 545 mm2

TU102 Turing 18,600,000,000 2018 Nvidia TSMC 12 nm 754 mm2 [187]

TU117 Turing 4,700,000,000 2019 Nvidia TSMC 12 nm 200 mm2 [188]

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MOS transistor Date of MOS

Processor Designer(s) Manufacturer(s) Area Ref
count introduction process

TU116 Turing 6,600,000,000 2019 Nvidia TSMC 12 nm 284 mm2 [189]

Navi 14 6,400,000,000 2019 AMD TSMC 7 nm 158 mm2 [190]

Navi 10 10,300,000,000 2019 AMD TSMC 7 nm 251 mm2 [191]

GA100 Ampere 54,000,000,000 2020 Nvidia TSMC 7 nm 826 mm2 [3][192]

GA102 Ampere 28,000,000,000 2020 Nvidia Samsung 8 nm 628 mm2 [193][194]

FPGA

A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after
manufacturing.

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MOS transistor Date of MOS

FPGA Designer Manufacturer Area Ref
count introduction process
Virtex 70,000,000 1997 Xilinx
Virtex-E 200,000,000 1998 Xilinx
Virtex-II 350,000,000 2000 Xilinx 130 nm
Virtex-II PRO 430,000,000 2002 Xilinx
Virtex-4 1,000,000,000 2004 Xilinx 90 nm

Virtex-5 1,100,000,000 2006 Xilinx TSMC 65 nm [195]

Stratix IV 2,500,000,000 2008 Altera TSMC 40 nm [196]

Stratix V 3,800,000,000 2011 Altera TSMC 28 nm [197]

Arria 10 5,300,000,000 2014 Altera TSMC 20 nm [198]

Virtex-7 2000T 6,800,000,000 2011 Xilinx TSMC 28 nm [199]

Stratix 10 SX 2800 17,000,000,000 TBD Intel Intel 14 nm 560 mm2 [200][201]

Virtex-Ultrascale VU440 20,000,000,000 Q1 2015 Xilinx TSMC 20 nm [202][203]

Virtex-Ultrascale+
35,000,000,000 2020 Xilinx TSMC 16 nm 900 mm2 [e] [204][205][206]
VU19P

Versal VC1902 37,000,000,000 2H 2019 Xilinx TSMC 7 nm [207][208][209]

1400 mm2 [210][211]
Stratix 10 GX 10M 43,300,000,000 Q4 2019 Intel Intel 14 nm [e]

Versal VP1802 92,000,000,000 2021 ?[f] Xilinx TSMC 7 nm ? [212][213]

Memory

Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on integrated circuits.
Nearly all semiconductor memory since the 1970s have used MOSFETs (MOS transistors), replacing earlier bipolar junction transistors.
There are two major types of semiconductor memory, random-access memory (RAM) and non-volatile memory (NVM). In turn, there
are two major RAM types, dynamic random-access memory (DRAM) and static random-access memory (SRAM), as well as two major
NVM types, flash memory and read-only memory (ROM).

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Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is
common. Capacitor charged or not is used to store 1 or 0. For flash memory, the data is stored in floating gate, and the resistance of the
transistor is sensed to interpret the data stored. Depending on how fine scale the resistance could be separated, one transistor could
store up to 3-bits, meaning eight distinctive level of resistance possible per transistor. However, the fine the scale comes with cost of
repeatability therefore reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16 GB flash drive contains roughly
64 billion transistors.

For SRAM chips, six-transistor cells (six transistors per bit) was the standard.[214] DRAM chips during the early 1970s had three-
transistor cells (three transistors per bit), before single-transistor cells (one transistor per bit) became standard since the era of 4  Kb
DRAM in the mid-1970s.[215][216] In single-level flash memory, each cell contains one floating-gate MOSFET (one transistor per
bit),[217] whereas multi-level flash contains 2, 3 or 4 bits per transistor.

Flash memory chips are commonly stacked up in layers, up to 128-layer in production,[218] and 136-layer managed,[219] and available in
end-user devices up to 69-layer from manufacturers.

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Random-access memory (RAM)

Chip Capacity Transistor Date of MOS
RAM type Manufacturer(s) Area Ref
name (bits) count introduction process

N/A 1-bit SRAM (cell) 6 1963 Fairchild N/A N/A [220]

N/A 1-bit DRAM (cell) 1 1965 Toshiba N/A N/A [221][222]

SRAM [220]
? 8-bit 48 1965 SDS, Signetics ? ?
(bipolar)
SRAM [223]
SP95 16-bit 80 1965 IBM ? ?
(bipolar)

TMC3162 16-bit SRAM (TTL) 96 1966 Transitron N/A ? [216]

? SRAM (MOS) ? 1966 NEC ? ? [215]

256-bit DRAM (IC) 256 1968 Fairchild ? ? [216]

?
64-bit SRAM (PMOS) 384 1968 Fairchild
? ? [215]
SRAM
144-bit 864 1968 NEC
(NMOS)

1101 256-bit SRAM (PMOS) 1,536 1969 Intel 12,000 nm ? [224][225][226]

DRAM [215]
1102 1 Kb 3,072 1970 Intel, Honeywell ? ?
(PMOS)
DRAM
1103 1 Kb 3,072 1970 Intel 8,000 nm 10 mm2 [227][214][228][216]
(PMOS)
DRAM [229]
μPD403 1 Kb 3,072 1971 NEC ? ?
(NMOS)
DRAM
? 2 Kb 6,144 1971 General Instrument ? 12.7 mm2 [230]
(PMOS)
SRAM [224][231]
2102 1 Kb 6,144 1972 Intel ? ?
(NMOS)
DRAM
? 8 Kb 8,192 1973 IBM ? 18.8 mm2 [230]
(PMOS)
SRAM [224]
5101 1 Kb 6,144 1974 Intel ? ?
(CMOS)
DRAM [232][216]
2116 16 Kb 16,384 1975 Intel ? ?
(NMOS)

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Chip Capacity Transistor Date of MOS

RAM type Manufacturer(s) Area Ref
name (bits) count introduction process
SRAM [224][233]
2114 4 Kb 24,576 1976 Intel ? ?
(NMOS)
SRAM [225]
4 Kb 24,576 1977 Toshiba ? ?
(CMOS)
DRAM
65,536 1977 NTT ? 35.4 mm2 [230]
(NMOS)
64 Kb
DRAM
65,536 1979 Siemens ? 25.2 mm2 [230]
(VMOS)
SRAM [234]
16 Kb 98,304 1980 Hitachi, Toshiba ? ?
(CMOS)

DRAM NEC 1,500 nm 41.6 mm2 [230]

256 Kb 262,144 1980
(NMOS)
NTT 1,000 nm 34.4 mm2 [230]

SRAM [234]
64 Kb 393,216 1980 Matsushita ? ?
(CMOS)
?
288 Kb DRAM 294,912 1981 IBM ? 25 mm2 [235]

SRAM [234]
64 Kb 393,216 1982 Intel 1,500 nm ?
(NMOS)
SRAM [234][226]
256 Kb 1,572,864 1984 Toshiba 1,200 nm ?
(CMOS)

8 Mb DRAM 8,388,608 January 5, 1984 Hitachi ? ? [236][237]

DRAM
16 Mb 16,777,216 1987 NTT 700 nm 148 mm2 [230]
(CMOS)
SRAM NEC, Toshiba, Hitachi,
4 Mb 25,165,824 1990 ?
(CMOS) Mitsubishi
? [234]
DRAM Matsushita, Mitsubishi,
64 Mb 67,108,864 1991 400 nm
(CMOS) Fujitsu, Toshiba

KM48SL2000 16 Mb SDRAM 16,777,216 1992 Samsung ? ? [238][239]

? SRAM
16 Mb 100,663,296 1992 Fujitsu, NEC 400 nm
(CMOS)
? [234]
DRAM
256 Mb 268,435,456 1993 Hitachi, NEC 250 nm
(CMOS)
1 Gb DRAM 1,073,741,824 January 9, 1995 NEC 250 nm ? [240][241]

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Chip Capacity Transistor Date of MOS

RAM type Manufacturer(s) Area Ref
name (bits) count introduction process
Hitachi 160 nm ?

SDRAM 1,073,741,824 1996 Mitsubishi 150 nm ? [234]

SDRAM (SOI) 1,073,741,824 1997 Hyundai ? ? [242]

DRAM (4-bit) 1,073,741,824 1997 NEC 150 nm ? [234]

4 Gb
DRAM 4,294,967,296 1998 Hyundai ? ? [242]

SDRAM
8 Gb 8,589,934,592 April 2008
(DDR3)
Samsung 50 nm ? [243]
SDRAM
16 Gb 17,179,869,184 2008
(DDR3)
SDRAM
32 Gb 34,359,738,368 2016
(HBM2)
Samsung 20 nm ? [244]
SDRAM
64 Gb 68,719,476,736 2017
(HBM2)
SDRAM [245]
128 Gb 137,438,953,472 2018 Samsung 10 nm ?
(DDR4)

RRAM[246] SkyWater
? ? 2019 90 nm ?
(3DSoC)[247] Technology[248]

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Flash memory
Capacity FGMOS transistor Date of MOS
Chip name Flash type Manufacturer(s) Area Ref
(bits) count introduction process
256 Kb NOR 262,144 1985 Toshiba 2,000 nm
1 Mb NOR 1,048,576 1989 Seeq, Intel ?
? ? [234]
4 Mb NAND 4,194,304 1989 Toshiba 1,000 nm
16 Mb NOR 16,777,216 1991 Mitsubishi 600 nm

DD28F032SA 32 Mb NOR 33,554,432 1993 Intel ? 280 mm2 [224][249]

NOR 67,108,864 1994 NEC

64 Mb 400 nm
NAND 67,108,864 1996 Hitachi
? [234]
128 Mb NAND 134,217,728 1996 Samsung, Hitachi ?
256 Mb NAND 268,435,456 1999 Hitachi, Toshiba 250 nm

512 Mb NAND 536,870,912 2000 Toshiba ? ? [250]

Samsung ? ? [234]
?
1 Gb 2-bit NAND 536,870,912 2001
Toshiba, SanDisk 160 nm ? [251]

2 Gb NAND 2,147,483,648 2002 Samsung, Toshiba ? ? [252][253]

8 Gb NAND 8,589,934,592 2004 Samsung 60 nm ? [252]

16 Gb NAND 17,179,869,184 2005 Samsung 50 nm

? [254]
32 Gb NAND 34,359,738,368 2006 Samsung 40 nm

THGAM 128 Gb Stacked NAND 128,000,000,000 April 2007 Toshiba 56 nm 252 mm2 [255]

THGBM 256 Gb Stacked NAND 256,000,000,000 2008 Toshiba 43 nm 353 mm2 [256]

Stacked 4-bit
THGBM2 1 Tb 256,000,000,000 2010 Toshiba 32 nm 374 mm2 [257]
NAND
Stacked 2-bit
KLMCG8GE4A 512 Gb 256,000,000,000 2011 Samsung ? 192 mm2 [258]
NAND
Stacked 3-bit V-
KLUFG8R1EM 4 Tb 1,365,333,333,504 2017 Samsung ? 150 mm2 [259]
NAND
Stacked 4-bit V-
eUFS (1 TB) 8 Tb 2,048,000,000,000 2019 Samsung ? 150 mm2 [4][260]
NAND

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Read-only memory (ROM)

Chip Capacity Transistor Date of MOS
ROM type Manufacturer(s) Area Ref
name (bits) count introduction process

? PROM ? 1956 Arma N/A ? [261][262]

?
General [263]
1 Kb ROM (MOS) 1,024 1965 ? ?
Microelectronics

3301 1 Kb ROM (bipolar) 1,024 1969 Intel N/A ? [263]

EPROM
1702 2 Kb 2,048 1971 Intel ? 15 mm2 [264]
(MOS)
AMD, General [263]
? 4 Kb ROM (MOS) 4,096 1974 ? ?
Instrument
EPROM [224]
2708 8 Kb 8,192 1975 Intel ? ?
(MOS)
EEPROM [265]
? 2 Kb 2,048 1976 Toshiba ? ?
(MOS)
µCOM-43 PROM [266]
16 Kb 16,000 1977 NEC ? ?
ROM (PMOS)

2716 16 Kb EPROM (TTL) 16,384 1977 Intel N/A ? [227][267]

EA8316F 16 Kb ROM (NMOS) 16,384 1978 Electronic Arrays ? 436 mm2 [263][268]

2732 32 Kb EPROM 32,768 1978 Intel ? ? [224]

2364 64 Kb ROM 65,536 1978 Intel ? ? [269]

2764 64 Kb EPROM 65,536 1981 Intel 3,500 nm

? [224][234]
27128 128 Kb EPROM 131,072 1982 Intel ?
EPROM [224][270]
27256 256 Kb 262,144 1983 Intel ? ?
(HMOS)
EPROM [271]
256 Kb 262,144 1983 Fujitsu ? ?
(CMOS)
?
EPROM [234]
512 Kb 524,288 1984 AMD 1,700 nm ?
(NMOS)
EPROM [224][272]
27512 512 Kb 524,288 1984 Intel ? ?
(HMOS)
? EPROM ? [234]
1 Mb 1,048,576 1984 NEC 1,200 nm
(CMOS)
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Chip Capacity Transistor Date of MOS

ROM type Manufacturer(s) Area Ref
name (bits) count introduction process
EPROM
4 Mb 4,194,304 1987 Toshiba 800 nm
(CMOS)
EPROM
16,777,216 1990 NEC 600 nm
16 Mb (CMOS)

MROM 16,777,216 1995 AKM, Hitachi ? ? [241]

Transistor computers

Before transistors were invented, relays were used in commercial tabulating machines and experimental early computers. The world's
first working programmable, fully automatic digital computer,[273] the 1941 Z3 22-bit word length computer, had 2,600 relays, and
operated at a clock frequency of about 4–5 Hz. The 1940 Complex Number Computer had fewer than 500 relays,[274] but it was not fully
programmable. The earliest practical computers used vacuum tubes and solid-state diode logic. ENIAC had 18,000 vacuum tubes,
7,200 crystal diodes, and 1,500 relays, with many of the vacuum tubes containing two triode elements.

The second generation of computers were transistor computers that featured boards filled with discrete transistors, solid-state diodes
and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely
believed to be the first transistor computer to come into operation anywhere in the world (the prototype had 92 point-contact
transistors and 550 diodes).[275] A later version the 1955 machine had a total of 250 junction transistors and 1300 point-contact diodes.
The Computer also used a small number of tubes in its clock generator, so it was not the first fully transistorized. The ETL Mark III,
developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored
program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and
these were housed on 300 plug-in packages which could be slipped in and out."[276] The 1958 decimal architecture IBM 7070 was the
first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium
diodes, on approximately 14,000 Standard Modular System (SMS) cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at
12,000 pounds (6.0 short tons) mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.

The third generation of computers used integrated circuits (ICs).[277] The 1962 15-bit Apollo Guidance Computer used "about 4,000
"Type-G" (3-input NOR gate) circuits" for about 12,000 transistors plus 32,000 resistors.[278]
The IBM System/360, introduced 1964,
used discrete transistors in hybrid circuit packs.[277] The 1965 12-bit PDP-8 CPU had 1409 discrete transistors and over 10,000 diodes,
on many cards. Later versions, starting with the 1968 PDP-8/I, used integrated circuits. The PDP-8 was later reimplemented as a
microprocessor as the Intersil 6100, see below.[279]

The next generation of computers were the microcomputers, starting with the 1971 Intel 4004. which used MOS transistors. These were
used in home computers or personal computers (PCs).

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This list includes early transistorized computers (second generation) and IC-based computers (third generation) from the 1950s and
1960s.

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Transistor
Computer Year Manufacturer Notes Ref
count
Point-contact transistors, 550 diodes. Lacked stored program [275]
Transistor Computer 92 1953 University of Manchester
capability.

TRADIC 700 1954 Bell Labs Point-contact transistors [275]

Transistor Computer [275]

250 1955 University of Manchester Discrete point-contact transistors, 1,300 diodes
(full size)

IBM 608 3,000 1955 IBM Germanium transistors [280]

Electrotechnical [275][276]
ETL Mark III 130 1956 Point-contact transistors, 1,800 diodes, stored program capability
Laboratory
Metrovick 950 200 1956 Metropolitan-Vickers Discrete junction transistors

NEC NEAC-2201 600 1958 NEC Germanium transistors [281]

Hitachi MARS-1 1,000 1958 Hitachi [282]

IBM 7070 30,000 1958 IBM Alloy-junction germanium transistors, 22,000 diodes [283]

Matsushita MADIC-I 400 1959 Matsushita Bipolar transistors [284]

NEC NEAC-2203 2,579 1959 NEC [285]

Toshiba TOSBAC- [286]

5,000 1959 Toshiba
2100

IBM 7090 50,000 1959 IBM Discrete germanium transistors [287]

Digital Equipment
PDP-1 2,700 1959 Discrete transistors
Corporation
Mitsubishi MELCOM [288]
3,500 1960 Mitsubishi Germanium transistors
1101
M18 FADAC 1,600 1960 Autonetics Discrete transistors
D-17B 1,521 1962 Autonetics Discrete transistors

NEC NEAC-L2 16,000 1964 NEC Ge transistors [289]

IBM System/360 ? 1964 IBM Hybrid circuits

Digital Equipment
PDP-8/I 1409 1968 74 series TTL circuits
Corporation
Raytheon / MIT
Apollo Guidance 4,100 ICs, each containing a 3-transistor, 3-input NOR gate. (Block
12,300 1966 Instrumentation
Computer Block I II had 2,800 dual 3-input NOR gates ICs.)
Laboratory
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Logic functions

Transistor count for generic logic functions is based on static CMOS implementation.[290]

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Function Transistor count Ref

NOT 2
Buffer 4
NAND 2-input 4
NOR 2-input 4
AND 2-input 6
OR 2-input 6
NAND 3-input 6
NOR 3-input 6
XOR 2-input 6
XNOR 2-input 8
MUX 2-input with TG 6
MUX 4-input with TG 18
NOT MUX 2-input 8
MUX 4-input 24
1-bit adder full 28
1-bit adder–subtractor 48

AND-OR-INVERT 6 [291]

Latch, D gated 8
Flip-flop, edge triggered dynamic D with reset 12
8-bit multiplier 3,000
16-bit multiplier 9,000
32-bit multiplier 21,000

small-scale integration 2–100 [292]

medium-scale integration 100–500 [292]

large-scale integration 500–20,000 [292]

very-large-scale integration 20,000–1,000,000 [292]

ultra-large scale integration >1,000,000

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Parallel systems

Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple
chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core
processor chip could contain more processing elements.[293]

Goodyear MPP: (1983?) 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.[293]

Brunel University Scape (single-chip array-processing element): (1983) 256 pixel processors per chip, 120,000 to 140,000 transistors
per chip.[293]

Cell Broadband Engine: (2006) with 9 cores per chip, had 234 million transistors per chip.[294]

Other devices

Device Transistor Date of MOS

Device type Designer(s) Manufacturer(s) Area Ref
name count introduction process
Deep learning Colossus
23,600,000,000 2018 Graphcore TSMC 16 nm ~800 mm2 [295][296][297]
engine / IPU[g] GC2

Deep learning Wafer Scale

1,200,000,000,000 2019 Cerebras TSMC 16 nm 46,225 mm2 [5][6][7][8]
engine / IPU Engine
Deep learning Wafer Scale
2,600,000,000,000 2020 Cerebras TSMC 7 nm 46,225 mm2 [9][298]
engine / IPU Engine 2

Transistor density
The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of
transistors per square millimeter (mm2). The transistor density usually correlates with the gate length of a semiconductor node (also
known as a semiconductor manufacturing process), typically measured in nanometers (nm). As of 2019, the semiconductor node with
the highest transistor density is TSMC's 5 nanometer node, with 171.3 million transistors per square millimeter.[299]

MOSFET nodes

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Semiconductor nodes
Transistor density Production
Node name Process MOSFET Manufacturer(s) Ref
(transistors/mm2) year

? ? 1960 20,000 nm PMOS

Bell Labs [300][301]
? ? 1960 20,000 nm NMOS

? ? 1963 ? CMOS Fairchild [19]

? ? 1964 ? PMOS General Microelectronics [302]

? ? 1968 20,000 nm CMOS RCA [303]

? ? 1969 12,000 nm PMOS Intel [234][226]

? ? 1970 10,000 nm CMOS RCA [303]

? 300 1970 8,000 nm PMOS Intel [228][216]

? ? 1971 10,000 nm PMOS Intel [304]

? 480 1971 ? PMOS General Instrument [230]

? ? 1973 ? NMOS Texas Instruments [230]

? 220 1973 ? NMOS Mostek [230]

? ? 1973 7,500 nm NMOS NEC [29][28]

? ? 1973 6,000 nm PMOS Toshiba [30][305]

? ? 1976 5,000 nm NMOS Hitachi, Intel [230]

? ? 1976 5,000 nm CMOS RCA

? ? 1976 4,000 nm NMOS Zilog

? ? 1976 3,000 nm NMOS Intel [306]

? 1,850 1977 ? NMOS NTT [230]

? ? 1978 3,000 nm CMOS Hitachi [307]

? ? 1978 2,500 nm NMOS Texas Instruments [230]

? ? 1978 2,000 nm NMOS NEC, NTT

? 2,600 1979 ? VMOS Siemens
? 7,280 1979 1,000 nm NMOS NTT

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Transistor density Production

Node name Process MOSFET Manufacturer(s) Ref
(transistors/mm2) year

? 7,620 1980 1,000 nm NMOS NTT

? ? 1983 2,000 nm CMOS Toshiba [234]

? ? 1983 1,500 nm CMOS Intel

? ? 1983 1,200 nm CMOS Intel
[230]
? ? 1984 800 nm CMOS NTT
? ? 1987 700 nm CMOS Fujitsu
? ? 1989 600 nm CMOS Mitsubishi, NEC, Toshiba
? ? 1989 500 nm CMOS Hitachi, Mitsubishi, NEC, Toshiba
Matsushita, Mitsubishi, Fujitsu, [234]
? ? 1991 400 nm CMOS
Toshiba
? ? 1993 350 nm CMOS Sony
? ? 1993 250 nm CMOS Hitachi, NEC

3LM 32,000 1994 350 nm CMOS NEC [151]

? ? 1995 160 nm CMOS Hitachi

[234]
? ? 1996 150 nm CMOS Mitsubishi

TSMC 180 nm ? 1998 180 nm CMOS TSMC [308]

CS80 ? 1999 180 nm CMOS Fujitsu [309]

? ? 1999 180 nm CMOS Intel, Sony, Toshiba [224][66]

CS85 ? 1999 170 nm CMOS Fujitsu [310]

Samsung [234]
? 1999 140 nm CMOS Samsung
140 nm

? ? 2001 130 nm CMOS Fujitsu, Intel [309][224]

Samsung [234]
? 2001 100 nm CMOS Samsung
100 nm

? ? 2002 90 nm CMOS Sony, Toshiba, Samsung [66][252]

CS100 ? 2003 90 nm CMOS Fujitsu [309]

Intel 90 nm 1,450,000 2004 90 nm CMOS Intel [311][224]

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Transistor density Production

Node name Process MOSFET Manufacturer(s) Ref
(transistors/mm2) year

Samsung [312]
? 2004 80 nm CMOS Samsung
80 nm

? ? 2004 65 nm CMOS Fujitsu, Toshiba [313]

Samsung [252]
? 2004 60 nm CMOS Samsung
60 nm
TSMC 45 nm ? 2004 45 nm CMOS TSMC

Elpida 90 nm ? 2005 90 nm CMOS Elpida Memory [314]

CS200 ? 2005 65 nm CMOS Fujitsu [315][309]

Samsung [254]
? 2005 50 nm CMOS Samsung
50 nm

Intel 65 nm 2,080,000 2006 65 nm CMOS Intel [311]

Samsung [254]
? 2006 40 nm CMOS Samsung
40 nm

Toshiba 56 nm ? 2007 56 nm CMOS Toshiba [255]

Matsushita [76]
? 2007 45 nm CMOS Matsushita
45 nm

Intel 45 nm 3,300,000 2008 45 nm CMOS Intel [316]

Toshiba 43 nm ? 2008 43 nm CMOS Toshiba [256]

TSMC 40 nm ? 2008 40 nm CMOS TSMC [317]

Toshiba 32 nm ? 2009 32 nm CMOS Toshiba [318]

Intel 32 nm 7,500,000 2010 32 nm CMOS Intel [316]

? ? 2010 20 nm CMOS Hynix, Samsung [319][254]

Intel 22 nm 15,300,000 2012 22 nm CMOS Intel [316]

IMFT 20 nm ? 2012 20 nm CMOS IMFT

[320]
Toshiba 19 nm ? 2012 19 nm CMOS Toshiba

Hynix 16 nm ? 2013 16 nm FinFET SK Hynix [319]

TSMC 16 nm 28,880,000 2013 16 nm FinFET TSMC [321][322]

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Transistor density Production

Node name Process MOSFET Manufacturer(s) Ref
(transistors/mm2) year

Samsung [323][324]
51,820,000 2013 10 nm FinFET Samsung
10 nm

Intel 14 nm 37,500,000 2014 14 nm FinFET Intel [316]

14LP 32,940,000 2015 14 nm FinFET Samsung [323]

TSMC 10 nm 52,510,000 2016 10 nm FinFET TSMC [321][325]

12LP 36,710,000 2017 12 nm FinFET GlobalFoundries, Samsung [179]

N7FF 96,500,000 2017 7 nm FinFET TSMC [326][327][328]

8LPP 61,180,000 2018 8 nm FinFET Samsung [323]

7LPE 95,300,000 2018 7 nm FinFET Samsung [327]

Intel 10 nm 100,760,000 2018 10 nm FinFET Intel [329]

5LPE 126,530,000 2018 5 nm FinFET Samsung [330][331]

N7FF+ 113,900,000 2019 7 nm FinFET TSMC [326][327]

CLN5FF 171,300,000 2019 5 nm FinFET TSMC [299]

Intel 7 100,760,000 2021 7 nm FinFET Intel

TSMC 3 nm ? ? 3 nm FinFET TSMC [332]

Samsung 3 nm ? ? 3 nm GAAFET Samsung [333]

Intel 4 ? ? 4 nm FinFET Intel [334]

See also
Gate count, an alternate metric
Dennard scaling
Electronics industry
Integrated circuit
List of best-selling electronic devices
List of semiconductor scale examples
MOSFET

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Semiconductor
Semiconductor device
Semiconductor device fabrication
Semiconductor industry
Transistor
Cerebras Systems

Notes
a. Declassified 1998
b. 3,510 without depletion mode pull-up transistors
c. 6,813 without depletion mode pull-up transistors
d. 3,900,000,000 core chiplet die, 2,090,000,000 I/O die
e. Estimate
f. Versal Premium are confirmed to be shipping in 1H 2021 but nothing was mentioned about the VP1802 in particular. Usually Xilinx
makes separate news for the release of its biggest devices so the VP1802 is likely to be released later.
g. "Intelligence Processing Unit"

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External links
Transistor counts of Intel processors (https://www.intel.com/pressroom/kits/events/moores_law_40th/)
Evolution of FPGA Architecture (https://www.xilinx.com/company/press/kits/asmbl/asmbl_arch_pres.pdf)

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