Freescale Semiconductor Document Number: AFT05MS004N

Technical Data Rev. 0, 7/2014

RF Power LDMOS Transistor

High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET AFT05MS004NT1
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment. 136–941 MHz, 4 W, 7.5 V
WIDEBAND
Narrowband Performance (7.5 Vdc, TA = 25C, CW) RF POWER LDMOS TRANSISTOR
Frequency Gps D Pout
(MHz) (dB) (%) (W)

520 (1) 20.9 74.9 4.9

Wideband Performance (7.5 Vdc, TA = 25C, CW)

Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)
SOT--89
136–174 (2) 0.10 17.8 61.8 6.1
350–520 (3) 0.12 15.4 49.4 4.2

Load Mismatch/Ruggedness
Frequency Signal Pin Test Source
(MHz) Type VSWR (W) Voltage Result 2
435(3) CW > 65:1 at all 0.24 9.0 No Device
Phase Angles (3 dB Overdrive) Degradation
1. Measured in 520 MHz narrowband test circuit.
2. Measured in 136–174 MHz VHF broadband reference circuit. 1 2 3
3. Measured in 350–520 MHz UHF broadband reference circuit. Gate Source Drain
Features
Figure 1. Pin Connections
 Characterized for Operation from 136 to 941 MHz
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Integrated ESD Protection
 Integrated Stability Enhancements
 Wideband — Full Power Across the Band
 Exceptional Thermal Performance
 Extreme Ruggedness
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Typical Applications
 Output Stage VHF Band Handheld Radio
 Output Stage UHF Band Handheld Radio
 Output Stage for 700–800 MHz Handheld Radio
 Driver for 10–1000 MHz Applications

 Freescale Semiconductor, Inc., 2014. All rights reserved. AFT05MS004NT1

RF Device Data
Freescale Semiconductor, Inc. 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +30 Vdc
Gate--Source Voltage VGS –6.0, +12 Vdc
Operating Voltage VDD 12.5, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature Range (1,2) TJ –40 to +150 C
Total Device Dissipation @ TC = 25C PD 28 W
Derate above 25C 0.23 W/C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC 4.4 C/W
Case Temperature 79C, 4.0 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22--A114) 1C, passes 1000 V
Machine Model (per EIA/JESD22--A115) A, passes 100 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current IDSS — — 2 Adc
(VDS = 30 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 1 Adc
(VDS = 7.5 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current IGSS — — 500 nAdc

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics
Gate Threshold Voltage VGS(th) 1.7 2.2 2.5 Vdc
(VDS = 10 Vdc, ID = 67 Adc)
Drain--Source On--Voltage VDS(on) — .22 — Vdc
(VGS = 10 Vdc, ID = 700 mAdc)

Forward Transconductance gfs — 4.0 — S

(VDS = 7.5 Vdc, ID = 4.0 Adc)

Dynamic Characteristics
Reverse Transfer Capacitance Crss — 1.63 — pF
(VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance Coss — 34.8 — pF

(VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance Ciss — 57.6 — pF

(VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)

AFT05MS004NT1
RF Device Data
2 Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit

Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 16 dBm, f = 520 MHz
Common--Source Amplifier Output Power Pout — 4.9 — W
Drain Efficiency D — 74.9 — %

AFT05MS004NT1
RF Device Data
Freescale Semiconductor, Inc. 3
 TYPICAL CHARACTERISTICS

100
Ciss

C, CAPACITANCE (pF)
Coss

Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc

10

Crss
1
0 2 4 6 8 10 12
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage

109

VDD = 7.5 Vdc

ID = 0.62 Amps
108
MTTF (HOURS)

0.77 Amps

107
0.91 Amps

106
90 100 110 120 130 140 150 160
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 3. MTTF versus Junction Temperature — CW

AFT05MS004NT1
RF Device Data
4 Freescale Semiconductor, Inc.
 520 MHz NARROWBAND PRODUCTION TEST FIXTURE

VGG VDD
C3 B1 C11

C2 C10
C1
C4 C9 C12

C7 C13
R6 R1 L1
R2
C16
C5 R3 L2
R4
R5 C8
C6 C14
C15

AFT05MS004N
D57923 Rev. 0

Figure 4. AFT05MS004NT1 Narrowband Test Circuit Component Layout — 520 MHz

Table 6. AFT05MS004NT1 Narrowband Test Circuit Component Designations and Values — 520 MHz
Part Description Part Number Manufacturer
B1 RF Bead, Short 2743019447 Fair--Rite
C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C11 0.1 F Chip Capacitors CDR33BX104AKWS AVX
C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet
C4, C9 180 pF Chip Capacitors ATC100B181JT300XT ATC
C5 11 pF Chip Capacitor ATC100B110JT500XT ATC
C6, C7 13 pF Chip Capacitors ATC100B130JT500XT ATC
C8, C15 2.2 pF Chip Capacitors ATC100B2R2JT500XT ATC
C12 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp
C13, C14 16 pF Chip Capacitors ATC100B160JT500XT ATC
C16 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC
L1 8.0 nH, 3 Turn Inductor A03TKLC Coilcraft
L2 5 nH, 2 Turn Inductor A02TKLC Coilcraft
R1, R2, R3, R4, R5 1.5 , 1/4 W Chip Resistors RC1206FR--071R5L Yageo
R6 27 , 1/4 W Chip Resistor CRCW120627R0FKEA Vishay
PCB Rogers RO4350, 0.030, r = 3.66 D57923 MTL

AFT05MS004NT1
RF Device Data
Freescale Semiconductor, Inc. 5
6
B1
VBIAS + VSUPPLY
+

AFT05MS004NT1
C1 C2 C3 C4 C9 C10 C11 C12

R6 L1

R1 C13
RF
C7 R2 OUTPUT
RF Z9 Z10 Z11 Z12 Z13 L2 Z14 Z15 Z16
INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
R3
C16
C15 C14 C8
C5 R4
C6 DUT

R5

Figure 5. AFT05MS004NT1 Narrowband Test Circuit Schematic — 520 MHz

Table 7. AFT05MS004NT1 Narrowband Test Circuit Microstrips — 520 MHz

Microstrip Description Microstrip Description
Z1 0.328  0.080 Microstrip Z9 0.708  0.620 Microstrip
Z2 0.490  0.120 Microstrip Z10 0.062  0.620 Microstrip
Z3 0.055  0.320 Microstrip Z11 0.162  0.620  0.320 Taper Microstrip
Z4 0.555  0.320 Microstrip Z12 0.377  0.320 Microstrip
Z5 0.160  0.320  0.620 Taper Microstrip Z13 0.055  0.320 Microstrip
Z6 0.045  0.620 Microstrip Z14 0.587  0.120 Microstrip
Z7 0.387  0.620 Microstrip Z15 0.078  0.120 Microstrip
Z8 0.273  0.620 Microstrip Z16 0.238  0.080 Microstrip

Freescale Semiconductor, Inc.

RF Device Data
 TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND
REFERENCE CIRCUIT

6
VDD = 7.5 Vdc, f = 520 MHz
5

Pout, OUTPUT POWER (WATTS)

4

Pin = 0.04 W
3

2
Pin = 0.02 W
1

0
1 1.5 2 2.5 3 3.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage

24 90

21 80
Gps
Pout, OUTPUT POWER (WATTS)

18 70

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

15 60

12 50

9 40
D
6 30
Pout
3 VDD = 7.5 Vdc, IDQ = 100 mA 20
f = 520 MHz
0 10
0 0.02 0.04 0.06 0.08 0.1
Pin, INPUT POWER (WATTS)
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power

VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 4 W

f Zsource Zload
MHz  
520 1.35 + j2.15 2.10 + j1.70
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz

AFT05MS004NT1
RF Device Data
Freescale Semiconductor, Inc. 7
 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT

Table 8. 136–174 MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Volts, IDQ = 100 mA, TA = 25C, CW
Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)
135 0.10 17.8 62.3 6.0
155 0.06 20.2 69.1 6.0
175 0.10 17.9 61.8 6.0

Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

155 CW > 65:1 at all 0.2 9.0 No Device

Phase Angles (3 dB Overdrive) Degradation

AFT05MS004NT1
RF Device Data
8 Freescale Semiconductor, Inc.
 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
J1

C11 C12
C1
C10

C13 C14 C15 L4 C16 C17 C18 C9

L6
C2

C3 C8
R1 Q1
L1
C4 L3 L5
L2
C7

C5 C6
D61839 AFT05MS004N Rev. 0 (136–174 MHz)

Figure 9. AFT05MS004NT1 VHF Broadband Reference Circuit Component Layout — 136–174 MHz

Table 10. AFT05MS004NT1 VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz
Part Description Part Number Manufacturer
C1, C10, C14, C17 1 nF Chip Capacitors 2012X7R2E102M TDK
C2 39 pF Chip Capacitor ATC600F390JT250XT ATC
C3, C8 56 pF Chip Capacitors ATC600F560JT250XT ATC
C4, C5 68 pF Chip Capacitors ATC600F680JT250XT ATC
C6, C15, C16 100 pF Chip Capacitors ATC600F101JT250XT ATC
C7 150 pF Chip Capacitor ATC600F151JT250XT ATC
C9 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C11, C12 10 F, 50 V Electrolytic Capacitors UVR1H100MDD Nichicon
C13, C18 1 F Chip Capacitors GRM21BR71H105KA12L Murata
J1 Breakaway Header, Right--Angle 3 Pins 22-28-8360 Molex
L1 13.7 nH Inductor 0807SQ14N Coilcraft
L2 12.3 nH Inductor 0806SQ12N Coilcraft
L3, L4 25.0 nH Inductors 0908SQ25N Coilcraft
L5 15.7 nH Inductor 0806SQ16N Coilcraft
L6 27.3 nH Inductor 0908SQ27N Coilcraft
Q1 RF Power LDMOS Transistor AFT05MS004NT1 Freescale
R1 33 , 1/10 W Chip Resistor CRCW080533R0JNEA Vishay
PCB 0.020, r = 4.8, FR4 (S--1000) D61839 MTL

AFT05MS004NT1
RF Device Data
Freescale Semiconductor, Inc. 9
10
AFT05MS004NT1
Z15
VSUPPLY
+

L4 C16 C17 C18 C12

VBIAS Z14
+
C11 C13 C14 C15
L3 RF
R1 OUTPUT
RF Z12 Z13 Z16 Z17 L5 Z18 Z19 L6 Z20 Z21 Z22
INPUT Z8
Z1 Z2 Z3 Z4 L1 Z5 Z6 Z7 L2 Z9 Z10 Z11
C10
C7 C8 C9
C1 DUT
C2 C3 C4 C5 C6

Figure 10. AFT05MS004NT1 VHF Broadband Reference Circuit Schematic — 136–174 MHz

Table 11. AFT05MS004NT1 VHF Broadband Reference Circuit Microstrips — 136–174 MHz
Microstrip Description Microstrip Description Microstrip Description
Z1 0.120  0.050 Microstrip Z9 0.070  0.300 Microstrip Z16 0.015  0.170 Microstrip
Z2 0.142  0.050 Microstrip Z10 0.032  0.300 Microstrip Z17* 0.357  0.050 Microstrip
Z3 0.010  0.050 Microstrip Z11 0.070  0.140 Microstrip Z18 0.010  0.050 Microstrip
Z4 0.012  0.050 Microstrip Z12 0.070  0.140 Microstrip Z19 0.010  0.050 Microstrip
Z5 0.010  0.050 Microstrip Z13 0.015  0.170 Microstrip Z20 0.010  0.050 Microstrip
Z6* 0.010  0.050 Microstrip Z14 0.030  0.084 Microstrip Z21 0.010  0.050 Microstrip
Z7 0.012  0.040 Microstrip Z15 0.040  0.040 Microstrip Z22 0.120  0.050 Microstrip
Z8 0.265  0.040 Microstrip
* Line length includes microstrip bends

Freescale Semiconductor, Inc.

RF Device Data
 TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND
REFERENCE CIRCUIT

22 90

EFFICIENCY (%)
21 80

D, DRAIN
20 D
70

Gps, POWER GAIN (dB)

19 60
18 50
Gps
17 8

POWER (WATTS)
16 7

Pout, OUTPUT
15 VDD = 7.5 Vdc 6
Pin = 0.1 W Pout
14 5
IDQ = 100 mA
13 4
135 140 145 150 155 160 165 170 175
f, FREQUENCY (MHz)
Figure 11. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Pin

6
f = 155 MHz 1
f = 155 MHz
5

Pout, OUTPUT POWER (WATTS)

Pout, OUTPUT POWER (WATTS)

0.8
VDD = 7.5 Vdc, Pin = 0.1 W
4 VDD = 7.5 Vdc
0.6 Pin = 0.1 W
3
VDD = 7.5 Vdc, Pin = 0.05 W 0.4 VDD = 7.5 Vdc
Pin = 0.05 W
2
0.2
1
Detail A 0
0 0.5 1 1.5 2 2.5
0
0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A
Figure 12. Output Power versus Gate--Source Voltage

25 80
155 MHz D 70
EFFICIENCY (%)

24 VDD = 7.5 Vdc

D, DRAIN

23 IDQ = 100 mA 60
22 175 MHz 50
21 135 MHz 40
Gps, POWER GAIN (dB)

20 30
19 155 MHz 20
18 10
17 175 MHz Pout 8
16 135 MHz 7
15 Gps 6
POWER (WATTS)

5
Pout, OUTPUT

14 155 MHz
13 175 MHz 4
12 3
11 135 MHz 2
10 1
9 0
0.01 0.1 0.3
Pin, INPUT POWER (WATTS)
Figure 13. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency

AFT05MS004NT1
RF Device Data
Freescale Semiconductor, Inc. 11
 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT

Zo = 25 
f = 175 MHz

f = 135 MHz

Zsource

Zload

f = 175 MHz
f = 135 MHz

VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 4 W

f Zsource Zload
MHz  
135 7.02 + j13.05 2.24 - j1.21
140 8.07 + j13.00 2.42 - j0.87
145 9.05 + j12.43 2.56 - j0.54
150 9.68 + j11.26 2.79 - j0.24
155 9.16 + j9.82 3.08 - j0.07
160 7.39 + j9.21 3.23 - j0.03
165 5.83 + j10.15 3.52 - j0.09
170 5.09 + j11.62 3.77 - j0.01
175 5.06 + j12.97 3.40 - j0.27
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 14. VHF Broadband Series Equivalent Source and Load Impedance — 136–174 MHz

AFT05MS004NT1
RF Device Data
12 Freescale Semiconductor, Inc.
 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT

Table 12. 350–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 7.5 Volts, IDQ = 50 mA, TA = 25C, CW
Frequency Pin Gps D Pout
(MHz) (W) (dB) (%) (W)
350 0.11 15.5 48.7 4.0
470 0.04 19.8 67.7 4.0
520 0.09 16.3 71.1 4.0

Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)

Frequency Signal Pin
(MHz) Type VSWR (W) Test Voltage, VDD Result

435 CW > 65:1 at all 0.24 9.0 No Device

Phase Angles (3 dB Overdrive) Degradation

AFT05MS004NT1
RF Device Data
Freescale Semiconductor, Inc. 13
 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
J1

B1 B2
C6 C7
C1 C12

R1 C11
L1 C5 C8 L5
L3
C2 C10

R2 Q1
L4
L2
C4 C9

C3

D56664 AFT05MS004N Rev. 0 (350–520 MHz)

Figure 15. AFT05MS004NT1 UHF Broadband Reference Circuit Component Layout — 350–520 MHz

Table 14. AFT05MS004NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz
Part Description Part Number Manufacturer
B1, B2 RF Beads 2743019447 Fair--Rite
C1, C10 18 pF Chip Capacitors GQM2195C2E180FB12D Murata
C5, C8, C12 100 pF Chip Capacitors GQM2195C2E101GB12D Murata
C2, C3 15 pF Chip Capacitors GQM2195C2E150FB12D Murata
C4 56 pF Chip Capacitor GQM2195C2E560GB12D Murata
C6 1 F Chip Capacitor GRM31CR72A105KA01L Murata
C7 10 F Chip Capacitor GRM31CR61H106KA12L Murata
C9 39 pF Chip Capacitor GQM2195C2E390GB12D Murata
C11 5.1 pF Chip Capacitor GQM2195C2E5R1BB12D Murata
J1 Breakaway Header, Right--Angle 3 Pins 22-28-8360 Molex
L1, L2 5.5 nH Inductors 0806SQ5N5 Coilcraft
L3 16.6 nH Inductor 0908SQ17N Coilcraft
L4 2.55 nH Inductor 0906--3JLC Coilcraft
L5 8.1 nH Inductor 0908SQ8N1 Coilcraft
Q1 RF Power LDMOS Transistor AFT05MS004NT1 Freescale
R1, R2 22 , 1/10 W Chip Resistors RR1220Q--220--D Susumu
PCB 0.020, r = 4.8, FR4 (S--1000) D56664 MTL

AFT05MS004NT1
RF Device Data
14 Freescale Semiconductor, Inc.
RF Device Data
B1 Z10 Z16 B2
VBIAS VSUPPLY

C6 C5 R1 C8 C7
L3

Freescale Semiconductor, Inc.

Z9 Z15

RF
RF R2 Z13 Z14 Z17 Z18 Z19 Z23 Z24 OUTPUT
L4 Z20 Z21 L5 Z22
INPUT
Z1 Z2 L1 Z3 Z4 L2 Z5 Z6 Z7 Z8 Z11 Z12
C12
C9 C10 C11
C1
C2 C3 C4 DUT

Figure 16. AFT05MS004NT1 UHF Broadband Reference Circuit Schematic — 350–520 MHz

Table 15. AFT05MS004NT1 UHF Broadband Reference Circuit Microstrips — 350–520 MHz
Microstrip Description Microstrip Description Microstrip Description
Z1 0.150 x 0.050 Microstrip Z9 0.140  0.060 Microstrip Z17 0.190  0.170 Microstrip
Z2 0.090  0.050 Microstrip Z10 0.065  0.034 Microstrip Z18 0.150  0.050 Microstrip
Z3 0.070  0.050 Microstrip Z11 0.057  0.300 Microstrip Z19* 0.270  0.050 Microstrip
Z4 0.070  0.050 Microstrip Z12 0.070  0.140 Microstrip Z20 0.070  0.050 Microstrip
Z5* 0.090  0.050 Microstrip Z13 0.070  0.140 Microstrip Z21 0.070  0.050 Microstrip
Z6* 0.160  0.050 Microstrip Z14 0.057  0.170 Microstrip Z22 0.050  0.050 Microstrip
Z7 0.260  0.050 Microstrip Z15 0.140  0.060 Microstrip Z23 0.050  0.050 Microstrip
Z8 0.095  0.300 Microstrip Z16 0.200  0.034 Microstrip Z24 0.150  0.050 Microstrip
* Line length includes microstrip bends

15
AFT05MS004NT1
 TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND
REFERENCE CIRCUIT

20 80
D

EFFICIENCY (%)
19 70

D, DRAIN
18 60

Gps, POWER GAIN (dB)

17 50
16 40
Gps
15 7

POWER (WATTS)
14 6

Pout, OUTPUT
13 5
VDD = 7.5 Vdc Pout
12 Pin = 0.12 W 4
IDQ = 50 mA
11 3
340 360 380 400 420 440 460 480 500 520 540
f, FREQUENCY (MHz)
Figure 17. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant at a Constant Pin

6
f = 435 MHz 1.0
f = 435 MHz
5 Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)

0.8
VDD = 7.5 Vdc
4 VDD = 7.5 Vdc, Pin = 0.12 W
Pin = 0.06 W
0.6
3 VDD = 7.5 Vdc
VDD = 7.5 Vdc, Pin = 0.06 W
0.4 Pin = 0.12 W
2
0.2
1
0
Detail A 0 0.5 1 1.5 2
0
0 0.5 1 1.5 2 2.5 3 VGS, GATE--SOURCE VOLTAGE (VOLTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A
Figure 18. Output Power versus Gate--Source Voltage

25 80
24 VDD = 7.5 Vdc 435 MHz D
EFFICIENCY (%)

70
D, DRAIN

23 IDQ = 50 mA 350 MHz 60

22 520 MHz 50
21 40
Gps, POWER GAIN (dB)

20 435 MHz 30
19 20
18 10
17 520 MHz 7
16 Pout 6
POWER (WATTS)

15 350 MHz 435 MHz 5

Pout, OUTPUT

14 Gps 4
13 350 MHz 3
12 2
520 MHz
11 1
10 0
0.01 0.1 0.3
Pin, INPUT POWER (WATTS)
Figure 19. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency

AFT05MS004NT1
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16 Freescale Semiconductor, Inc.
 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT

f = 520 MHz

Zsource Zo = 5 

f = 350 MHz
f = 520 MHz

Zload

f = 350 MHz

VDD = 7.5 Vdc, IDQ = 50 mA, Pout = 4 W

f Zsource Zload
MHz  
350 2.27 - j1.72 3.55 + j1.20
360 2.41 - j1.91 3.61 + j0.92
370 2.55 - j2.11 3.66 + j0.64
380 2.68 - j2.31 3.71 + j0.36
390 2.74 - j2.38 3.71 + j0.15
400 2.76 - j2.36 3.69 + j0.02
410 2.77 - j2.35 3.66 + j0.18
420 2.78 - j2.35 3.67 + j0.34
430 2.78 - j2.43 3.82 + j0.48
440 2.79 - j2.50 3.97 + j0.62
450 2.79 - j2.57 4.13 + j0.76
460 2.44 - j2.70 4.00 + j0.95
470 2.02 - j2.84 3.80 + j1.15
480 1.59 - j2.98 3.61 + j1.36
490 1.37 - j3.20 3.53 + j1.46
500 1.45 - j3.53 3.62 + j1.41
510 1.52 - j3.86 3.71 + j1.36
520 1.60 - j4.19 3.80 + j1.31
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.

Input Device Output

Matching Under Matching
Network Test Network
50  50 

Zsource Zload

Figure 20. UHF Broadband Series Equivalent Source and Load Impedance — 350–520 MHz

AFT05MS004NT1
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Freescale Semiconductor, Inc. 17
 1.90

3.00

2X 4.35
45

2X
1.25

3X
0.85 0.70

2X
1.50

Figure 21. PCB Pad Layout for SOT--89A

AFT504
AWLYWZ

Figure 22. Product Marking

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 PACKAGE DIMENSIONS

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Freescale Semiconductor, Inc. 19
AFT05MS004NT1
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20 Freescale Semiconductor, Inc.
 AFT05MS004NT1
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Freescale Semiconductor, Inc. 21
 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 July 2014  Initial Release of Data Sheet

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22 Freescale Semiconductor, Inc.
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E 2014 Freescale Semiconductor, Inc.

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Document Data AFT05MS004N
Number:
Rev. 0, 7/2014
Freescale Semiconductor, Inc. 23