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Week6QuizAnswers S15

This document contains a quiz with 7 multiple choice questions about semiconductor device fabrication and PN diodes. The questions cover topics like ion implantation, lithography, common insulating materials in silicon manufacturing, electric fields and electron densities in PN junctions, and the effects of inserting an intrinsic layer between N and P layers on built-in potential. The document provides the student's name, ID number, course information, and answers to the quiz questions with brief explanations for some answers.

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71 views

Week6QuizAnswers S15

This document contains a quiz with 7 multiple choice questions about semiconductor device fabrication and PN diodes. The questions cover topics like ion implantation, lithography, common insulating materials in silicon manufacturing, electric fields and electron densities in PN junctions, and the effects of inserting an intrinsic layer between N and P layers on built-in potential. The document provides the student's name, ID number, course information, and answers to the quiz questions with brief explanations for some answers.

Uploaded by

baraniinst
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NAME:______________________________________

    PUID:  ______________________________________  
 
Week  6  Quiz  ANSWERS:    Device  Fabrication  and  PN  Diodes  I  
ECE  305:  Semiconductor  Devices  
Mark  Lundstrom,  Purdue  University,  Spring  2015  
 
Answer  the  multiple  choice  questions  below  by  choosing  the  one,  best  answer.    
 
 
 
1)   Ion  implantation  is  a  technique  to  do  what?  
a)    Dope  a  semiconductor.  
b)    Deposit  an  insulating  layer  on  a  semiconductor.  
c)    Deposit  a  metallic  layer  on  a  semiconductor.  
d)    Deposit  an  insulating  layer  on  an  insulator.  
e)    Deposit  a  metallic  layer  on  an  insulator.  
 
 
2) What  is  “lithography”  used  for  in  semiconductor  manufacturing?  
a)    To  dope  semiconductors.  
b)    To  deposit  amorphous  films  on  semiconductors.  
c)    To  deposit  polycrystalline  films  on  semiconductors.  
d)    To  grow  crystalline  films  on  semiconductors.  
e)    To  produce  patterns  in  the  films  deposited  on  semiconductors.  
 
 
3) What  is  the  most  common  insulator  used  in  silicon  manufacturing?  
 
a)    Si3N4  
b)    Al2O3.  
c)    Si02.   ***  These  days,  it  is  being  replaced  by  so-­‐called  hi-­‐K  materials  for  the    
d)    HfO2.                  gate  oxide  of  transistors,  but  SiO2  is  used  in  many  other  places  in  IC  
                 manufacturing.  
e)    Ta2O5.  
 
 
4) Which  of  the  following  statements  is  true  about  the  magnitude  of  the  electric  field  in  
the  transition  region  of  an  NP  junction?  
a)    It  is  constant  in  space.    
b)    It  increases  linearly  from  the  N  side  to  the  P-­‐side.  
c)      It  decreases  linearly  from  the  N  side  to  the  P-­‐side..  
d)    It  first  increases  linearly,  reaches  a  peak  at  the  junction,  then  decreases  
linearly.  
e)    It  increases  quadratically  from  the  N  side  to  the  P-­‐side.  
 
 

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5)   Which  of  the  following  is  true  about  the  electron  density  in  the  transition  region  
−xn < x < x p    of  an  NP  junction?  
a)    It  is  less  than   ni  everywhere.  
b)    It  is  zero  everywhere.  
c)    It  is  much  less  than  the  doping  density  over  most  of  the  transition  region.  
d)    It  varies  with  space  as   exp ( −x / Ln )  .  
e)    It  varies  with  space  as   cosh ( x / Ln ) .  
 
 
6)   The  built-­‐in  potential  of  an  NP  junction  is  roughly  equal  to  what  in  magnitude?  
 
a)    The  thermal  voltage,   k BT q  .  
b)     3k BT 2q .  
c)    110  V.  
d)    The  bandgap  of  the  semiconductor  in  eV.  
e)    The  electron  affinity  of  the  semiconductor  in  eV.  
 
 
7)   What  happens  if  we  insert  an  intrinsic  (undoped)  layer  between  the  N  and  P  layers  of  
an  NP  junction?  
 
a)    The  built-­‐in  potential  decreases  by  about  a  factor  of  2.  
b)    The  built-­‐in  potential  increases  by  about  a  factor  of  2..  
c)    The  built-­‐in  potential  becomes  zero.  
d)    The  built-­‐in  potential  becomes   k BT q .  
e)    The  built-­‐in  potential  does  not  change.      ***  It  only  depends  on  the  two  ends  –  
                                   not  on  what  is  in  between.  

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