IGBT v/s MOSFET

IGBT and MOSFET have their unique characteristics, uses, and of course, significance in their applications. But what are
the differences between both of them? Millennium Semiconductors, one of the top distributors of IGBT IGBT power
modules and SIC MOSFET, highlights a few essential differences between IGBT and MOSFET.

IGBT v/s MOSFET – Difference Between IGBT and MOSFET

IGBT MOSFET
Description IGBT is a three terminal (gate, The MOSFET is also a three-terminal
collector, emitter) full-controlled (gate, drain, and source) full-
switch. Its gate/control signal controlled switch. The gate/control
happens between the gate and signal happens between the gate
emitter, and the drain and emitter and source, and here, it is the drain
form its switch terminals. and source that constitute its switch
terminals.
Frequency Low (Less than 20kHz) High (Greater than 200kHz)
Cycles Low duty Long duty
Voltage High (Higher than 20kHz) Low (Less than 250V)
Switching Time High speed(Faster than bipolar Ultra-high speed(Unipolar device)
transistors, but slower than
MOSFETs)
On-State Voltage Characteristics Low VCE(sat)With built-in voltage(*1) On-resistance x drain currentWithout
built-in voltage(*1)
Input Impedance High High
Output Impedance Low Medium
Cost High Medium
Control GATE Voltage
Temperature Coefficient Negative Positive
Applications - (UPS): Constant load, and - Battery charging
usually low frequency. Switch Mode Power
- Motor control: Frequency Supplies (SMPS): Hard
<20kHz, short circuit/in- switching above 200kHz
rush limit protection - Switch Mode Power
- Low-power lighting: Low Supplies (SMPS): ZVS
frequency (<100kHz) below 1000 watts.
- Welding: High average
current, low frequency
(<50kHz), ZVS circuitry
- Induction heating
- Switch mode power supply
- Traction motor control
- Electric cars
- Lamp ballasts
Parasitic Diode Present only in RC-IGBTs Present (body diode)
ESD Tolerance Extreme tolerance- Vulnerable toward ESD, as the high
impedance technology does not
 allow for voltage dissipation
Gate (Base) Drive Circuit Relatively simple Relatively simple
Preference - Narrow or small line or - Long duty cycles
load variations - Wide line or load variations
- Low duty cycle - < 500W output power
- High-voltage applications - High frequency
(>1000V) applications (>200kHz)
- Low frequency (<20kHz) - Low-voltage applications
(<250V)

IGBT vs MOSFET – Summary

IGBT and MOSFET are voltage-controlled semiconductor devices primarily used to amplify weak signals. However, IGBTs
combine the low on-resistance capability of a bipolar transistor with the voltage drive peculiarities of a MOSFET. IGBT is
a three-terminal device that is a cross between the bipolar transistor and a MOSFET and hence, as mentioned above,
extremely tolerant to electrostatic discharge and overloads.

Need the Best Quality IGBT Power Modules or SIC MOSFET? Partner with Millennium Semiconductors!

Millennium Semiconductors is one of the most reputed, and also the top electronic component distributors in India. The
company engages in the distribution of IGBT power modules and SIC MOSFETs as well. The company partners with a
range of global manufacturers that include Sanken, Taiwan Semiconductors, UTC, ROHM, Infineon, and Silan for SiC
MOSFETs and Infineon, IXYS, Sanken, ROHM, and Everlite for IGBT Motor Controller Modules.

Additionally, the company’s nationwide network enables it to deliver electronic components to every corner of the
country. For more details or to partner with Millennium, connect with +91 8308838961 or write an email to
[email protected].