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Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

This document provides product specifications for the 2SA670 silicon PNP power transistor from Inchange Semiconductor. It includes descriptions of the TO-220 package and pin layout, absolute maximum ratings, typical characteristics including collector-emitter saturation voltage and current gain, and the package outline dimensions. The transistor can handle currents up to 3A and is intended for applications such as inverters, converters, power amplification, and switching regulators.

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60 views3 pages

Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

This document provides product specifications for the 2SA670 silicon PNP power transistor from Inchange Semiconductor. It includes descriptions of the TO-220 package and pin layout, absolute maximum ratings, typical characteristics including collector-emitter saturation voltage and current gain, and the package outline dimensions. The transistor can handle currents up to 3A and is intended for applications such as inverters, converters, power amplification, and switching regulators.

Uploaded by

sigit raharjo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA670

DESCRIPTION
·With TO-220 package
·Low collector saturation voltage

APPLICATIONS
·Inverters;converters
·Power amplification
·Switching regulator ,driver

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-220) and symbol
3 Base

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -50 V

VCEO Collector-emitter voltage Open base -50 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -3 A

PC Collector power dissipation TC=25℃ 25 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA670

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -50 V

V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -50 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V

ICBO Collector cut-off current VCB=-50V; IE=0 -100 μA

IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA

hFE DC current gain IC=-1A ; VCE=-4V 35 200

fT Transition frequency IC=-0.5A ; VCE=-10V 15 MHz

2
Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA670

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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