0% found this document useful (0 votes)
30 views2 pages

Semiconductor KTA1271: Technical Data

The document provides technical data for an epitaxial planar PNP transistor (KTA1271). Key specifications include: - High DC current gain (hFE) of 100-320 - Maximum collector current of -800mA and emitter current of 800mA - Complementary to transistor KTC3203 - Intended for high current applications

Uploaded by

LoengrinMontilla
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
30 views2 pages

Semiconductor KTA1271: Technical Data

The document provides technical data for an epitaxial planar PNP transistor (KTA1271). Key specifications include: - High DC current gain (hFE) of 100-320 - Maximum collector current of -800mA and emitter current of 800mA - Complementary to transistor KTC3203 - Intended for high current applications

Uploaded by

LoengrinMontilla
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

SEMICONDUCTOR KTA1271

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

HIGH CURRENT APPLICATION.

FEATURES B C

ᴌHigh hFE : hFE=100ᴕ320.


ᴌComplementary to KTC3203.

A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
C 3.70 MAX
MAXIMUM RATING (Ta=25ᴱ) D
D 0.45

J
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base Voltage VCBO -35 V H 0.45
H J _ 0.50
14.00 +
Collector-Emitter Voltage VCEO -30 V F F K 0.55 MAX
L 2.30
Emitter-Base Voltage VEBO -5 V M 0.45 MAX
N 1.00
1 2 3

C
Collector Current IC -800 mA

M
1. EMITTER
Emitter Current IE 800 mA 2. COLLECTOR
3. BASE
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
TO-92

ELECTRICAL CHARACTERISTICS (Ta=25 )


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
hFE(1) (Note) VCE=-1V, IC=-100mA 100 - 320
DC Current Gain
hFE(2) VCE=-1V, IC=-700mA 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-20mA - - -0.7 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA -0.5 - -0.8 V
Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 19 - pF
Note : hFE(1) Classification 0:100ᴕ200, Y:160ᴕ320

1998. 12. 26 Revision No : 2 1/2


KTA1271

I C - V CE h FE - I C
-1k 2k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)

Ta=25 C 1k VCE =-1V

DC CURRENT GAIN h FE
-800 -8
-7 500
-6
300
-600 -5 Ta=100 C
-4
Ta=25 C
100
-400 -3 Ta=-25 C
-2 50
-200 30
IB =-1mA

0
0 10
0 -1 -2 -3 -4 -5 -6 -1 -3 -10 -30 -100 -300 -1k

COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)

VCE(sat) - I C I C - V BE
-3 -1k
COLLECTOR-EMITTER SATURATION

COMMON EMITTER COMMON


COLLECTOR CURRENT I C (mA)

-500 EMITTER
I C /I B =25
-300 VCE =-1V
-1
VCE(sat) (V)

-0.5 -100
-0.3
-50

C
C

C
-30

25
100

-25
Ta=
Ta=

Ta=
-0.1
-10
-0.05 Ta=100 C
-0.03 Ta=25 C -5
Ta=-25 C -3

-0.01 -1
-1 -3 -10 -30 -100 -300 -1k -0.2 -0.4 -0.6 -0.8 -1.0

COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)

Pc - Ta

650
COLLECTOR POWER DISSIPATION

625

600
PC (mW)

575

550

525

500
0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE Ta ( C)

1998. 12. 26 Revision No : 2 2/2

You might also like