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RHRP8120: Package Features

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90 views

RHRP8120: Package Features

Uploaded by

Heru susanto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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S E M I C O N D U C T O R RHRP8120

April 1995 8A, 1200V Hyperfast Diode

Features Package
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AC
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V CATHODE


CATHODE
• Avalanche Energy Rated (FLANGE)

• Planar Construction

Applications
• Switching Power Supplies
• Power Switching Circuits Symbol
• General Purpose K

Description
The RHRP8120 (TA49096) are hyperfast diodes with soft
recovery characteristics (tRR < 55ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passi- A
vated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRP8120 TO-220AC RHRP8120
NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

RHRP8120 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR 1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 8 A
(TC = +126oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 16 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 100 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 mj
oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to +175

Copyright © Harris Corporation 1995 File Number 3660.1


7-62
Specifications RHRP8120

Electrical Specifications TC = +25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS

VF IF = 8A, TC = +25oC - - 3.2 V

IF = 8A, TC = +150oC - - 2.6 V

IR VR = 1200V, TC = +25oC - - 100 µA

VR = 1200V, TC = +150oC - - 500 µA

tRR IF = 1A, dIF/dt = 100A/µs - - 55 ns

IF = 8A, dIF/dt = 100A/µs - - 70 ns

tA IF = 8A, dIF/dt = 100A/µs - 34 - ns

tB IF = 8A, dIF/dt = 100A/µs - 30 - ns

QRR IF = 8A, dIF/dt = 100A/µs - 130 - nC

CJ VR = 10V, IF = 0A - 25 - pF

RθJC - - 2 oC/W

DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.

V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF +V3
R4 + LLOOP R1 t1 ≥ 5tA(MAX)
Q2
t2 > tRR
Q1 t3 > 0
L1 tA(MIN)
+V1 ≤
R4 10 dIF
0 tRR
LLOOP IF
t2 dt tA tB
R2 0
t1 DUT
Q4
0.25 IRM
t3 IRM
C1 R4
0 VR
Q3
-V2 R3 -V4

VRM

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

7-63
RHRP8120

Typical Performance Curves


40 500
+175oC
100

IR , REVERSE CURRENT (mA)


IF, FORWARD CURRENT (A)

10 10
+100oC

+25oC
0.1

+175oC +100oC +25oC


1 0.01

0.5 0.001
0 1 2 3 4 5 0 200 400 600 800 1000 1200
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLT-
VOLTAGE DROP AGE

TC = +25oC TC = +100oC
75 125

60 t, RECOVERY TIMES (ns) 100


t, RECOVERY TIMES (ns)

75 tRR
45 tRR

30 tA 50
tA

15 tB 25 tB

0 0
0.5 1 4 8 0.5 1 4 8

IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A)

FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +25oC CURRENT AT +100oC

TC = +175oC
10
IF(AV) , AVERAGE FORWARD CURRENT (A)

200

8
t, RECOVERY TIMES (ns)

150 DC
tRR
6

100 SQ. WAVE


tB 4

tA
50
2

0 0
0.5 4 75 100 125 150 175
1 8

IF , FORWARD CURRENT (A) TC , CASE TEMPERATURE (oC)

FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
CURRENT AT +175oC

7-64
RHRP8120

Typical Performance Curves (Continued)

100

CJ , JUNCTION CAPACITANCE (pF)


80

60

40

20

0
0 50 100 150 200

VR , REVERSE VOLTAGE (V)

FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE

Test Circuit and Waveforms


IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETs
L R
Q1 +
VDD

130Ω
1MΩ
DUT
Q2 VAVL
12V

CURRENT
SENSE IL IL
130Ω
I V
VDD
-
12V
t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS

7-65

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