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Course: Electronic Circuit Devices Lab No: 03 Title: Common Biasing Techniques of BJT CID: - Date

This lab document outlines an experiment on common biasing techniques for BJT transistors. The goals are to learn about biasing, common biasing methods, and specifically examine voltage divider bias and emitter bias. The procedures measure voltage and current values for circuits using voltage divider bias and emitter bias, both before and after swapping transistors. Any changes are recorded to analyze the stability of the biasing techniques.

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Aamir Chohan
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
48 views

Course: Electronic Circuit Devices Lab No: 03 Title: Common Biasing Techniques of BJT CID: - Date

This lab document outlines an experiment on common biasing techniques for BJT transistors. The goals are to learn about biasing, common biasing methods, and specifically examine voltage divider bias and emitter bias. The procedures measure voltage and current values for circuits using voltage divider bias and emitter bias, both before and after swapping transistors. Any changes are recorded to analyze the stability of the biasing techniques.

Uploaded by

Aamir Chohan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Department of Electronics & Telecommunication Engineering

Course: Electronic Circuit Devices

Lab No: 03

Title: Common Biasing techniques of BJT

CID: ________________

Date: _______________

S. No. Name SID Initials Marks


1

Faculty/Lab Engineer

Comments
Goals
 To learn What is Biasing
 Common Biasing Techniques
 Voltage Divider Bias
 Emitter Bias

Discussion
Biasing
Transistor biasing is the controlled amount of voltage and current that must be given to a
transistor for it to produce the desired amplification or switching effect. In other words,
transistors must be fed the correct or appropriate levels of voltages and/or currents to their
various regions in order to function properly and amplify signals to the correct level. This
controlled amount of voltage and/or currents fed to the different junctions of a transistor is
transistor biasing.
Without appropriate transistor biasing, the transistor may not function at all or amplify very
poorly, such as produce clipping of the signal or produce too low of gain. Therefore, it's very
important that a transistor is biased correctly for it to produce the intended output effect.
Common Biasing Techniques
Following are the common biasing Techniques
1. Base Bias 4. Collector Feedback Bias
2. Voltage Divide Bias 5. Emitter Feedback Biasing
3. Emitter Bias 6. Double Feedback Biasing

Materials
2 Variable dc power supply 1 resistor 1K, 1.5K, 33K, 330K, 6.5K ,
1 DMM 6.8K, 68K, 560K,
1 Protoboard 2 2N3904 npn transistor
1 Soldering Iron
Procedure

Figure 1: Voltage Divider Bias


Part I: Voltage Divider Bias DC Analysis
1. Measure the values of the resistors used in the circuit shown in Figure 1. Record the
measured Values below:
Component Nominal Value Measured Value
R1 33K
R2 6.8K
RE 5.6K
RC 1.5K

2. Using the measured component values, perform a dc analysis of the circuit shown in
Figure 1. Record the results of your calculations in the appropriate spaces in Table 1.
Value Calculated Measured
VR1
VB
VRE
ICQ
VRC
VCEQ
Table 1: Values for the current and voltages in Figure 1

3. Construct the circuit shown in Figure 1. Use your DMM to measure the values listed
in Table 1. Enter your measurements in the appropriate column of the table.

Part II: The Effect of Base Input Resistance (hFERE)


4. Modify the biasing circuit as shown in Figure 2. Note that the ratio of R1:R2 has not
changed, even though the components values have. Measure the following values:
VR1=____________ VB =___________
VRE=____________ VRC= __________
VCEQ=___________

Figure 2: Voltage Divider Bias


Part III: Voltage-Divider Bias Stability

5. Replace the base-biasing resistors with the original values shown in Figure. Swap the
2N3904 transistors. Measure VCE, and record this value below. Then, measure VRC,
and use this value (with the measured value of RC) to calculate ICQ. Record these
values below.
VRE=____________ VRC= __________
VCEQ=___________

6. Heat your soldering iron. Connect the DMM to monitor VCEQ. When the iron is hot,
very carefully touch it to the emitter terminal of the 2N3904. Leave the iron in
contact with the transistor for 1 or 2 seconds. Record any changes in VCE below.
∆VCE=__________
Part IV: Emitter-Bias DC Analysis
7. Measure the values of the resistors used in the circuit shown in Figure 1. Record the
nominal and measured values below.
Component Nominal Value Measured Value
RB
RC
RE

Figure 3: An Emitter-bias Circuit


8. Using measured component values, calculate the following circuit Q-point values:
ICQ = _________________
VCQ = _________________

9. Construct the circuit shown in Figure 3. Use your DMM to measure the following
values:
VB = ________
VE = ________ Be sure to measure these values
VC = ________ With respect to ground.
10. Using your measured values from steps 7 and 9, calculate the following values:
IB= = ___________
IE = = ______
ICQ = =__________
VCEQ = VC - VE = _________

11. Swap the 2N3904 transistor. Measure VB and VCE, and record these values below.
Then, measure VRC and use this value to calculate ICQ. Record your results in the
spaces provided.
VB = ___________
VCEQ = _________
VRC = __________
ICQ =___________

12. Based on your results from steps 8, 9 and 10. Calculate the change in ICQ and VCEQ
that resulted from the change in transistors.
Δ VCEQ = _________ Δ ICQ = ___________
13. Heat your soldering iron. Connect the DMM to monitor the VCEQ. When the iron is
hot, very carefully touch it to the emitter terminal of the 2N3904. Leave the iron in
contact with the transistor for 1 or 2 seconds. Record any changes in VCE below.
ΔVCE = _____________

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