2N5551 NPN SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING

„ FEATURES
SOT-89
* High collector-emitter voltage:
VCEO=160V
* High current gain

„ APPLICATIONS 1
* Telephone switching circuit TO-92
* Amplifier

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating Halogen Free 1 2 3
2N5551-x-AB3-R 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT-89 B C E Tape Reel
2N5551-x-T92-B 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 E B C Tape Box
2N5551-x-251-K 2N5551L-x-251-K 2N5551G-x-251 TO-251 E B C Tube
„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Dissipation TO-92 625 mW
PC
Collector Dissipation SOT-89 500 mW
Collector Current IC 600 mA
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 180 V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V
Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V
Collector Cut-off Current ICBO VCB=120V, IE=0 50 nA
Emitter Cut-off Current IEBO VBE=4V,IC=0 50 nA
hFE1 VCE=5V, IC=1mA 80
DC Current Gain(Note) hFE2 VCE=5V, IC=10mA 80 160 400
hFE3 VCE=5V, IC=50mA 80
IC=10mA, IB=1mA 0.15
Collector-Emitter Saturation Voltage VCE(SAT) V
IC=50mA, IB=5mA 0.2
IC=10mA, IB=1mA 1
Base-Emitter Saturation Voltage VBE(SAT) V
IC=50mA, IB=5mA 1
Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Output Capacitance Cob VCB=10V, IE=0 f=1MHz 6.0 pF
IC=0.25mA, VCE=5V
Noise Figure NF 8 dB
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty cycle<2%
„ CLASSIFICATION OF hFE
RANK A B C
RANGE 80-170 150-240 200-400
2N5551 NPN SILICON TRANSISTOR
„ TYPICAL CHARACTERISTICS

Collector Output Capacitance DC Current Gain

10 103

VCE=5V
8 f=1MHz
IE=0
102
6

4
101
2

0 100
10 0 101 102 10-1 100 101 102 103
Collector-Base Voltage (V) Collector Current, IC (mA)
Collector Current, IC (mA)

Saturation Voltage (V)

Current Gain-Bandwidth Product

103

VCE=10V

102

101

100
100 101 102 103
Collector Current, IC (mA)