BCW67 SOT23 PNP SILICON PLANAR BCW67

BCW68 MEDIUM POWER TRANSISTORS BCW68

ISSUE 4 - JUNE 1996
PARTMARKING DETAILS –
BCW67A – DA BCW67AR – 4W
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). BCW67B – DB BCW67BR – 5W E
C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67C – DC BCW67CR – 6W
BCW68F – DF BCW68FR – 7T
Collector-Emitter BCW67 V(BR)CEO -32 V ICEO=-10mA BCW68G – DG BCW68GR – 5T B
Breakdown Voltage BCW68 -45 ICEO=-10mA
BCW68H – DH BCW68HR – 7N
BCW67 V(BR)CES -45 IC=-10µA
BCW68 -60 IC=-10µA COMPLEMENTARY TYPES –
SOT23
BCW67 – BCW65
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO =-10µA
BCW68 – BCW66
Collector-Emitter BCW67 ICES -20 nA VCES =-32V
Cut-off Current -10 µA VCES=-32V ,Tamb=150°C
ABSOLUTE MAXIMUM RATINGS.
BCW68 -20 nA VCES =-45V PARAMETER SYMBOL BCW67 BCW68 UNIT
-10 µA VCES=-45V , Tamb=150°C
Collector-Emitter Voltage VCES -45 -60 V
Emitter-Base Cut-Off Current IEBO -20 nA VEBO =-4V Collector-Emitter Voltage VCEO -32 -45 V
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB = -10mA Emitter-Base Voltage VEBO -5 V
-0.7 V IC= -500mA, IB =-50mA* Peak Pulse Current(10ms) ICM -1000 mA
Base-Emitter Saturation Voltage VBE(sat) -2 V IC=-500mA, IB=-50mA* Continuous Collector Current IC -800 mA
Base Current IB -100 mA
Static BCW67A hFE 75 IC=-10mA, VCE =-1V
Forward BCW68F 100 170 250 IC=-100mA, VCE =-1V* Power Dissipation at Tamb=25°C Ptot 330 mW
Current 35 IC=-500mA, VCE =-2V*
Transfer Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW67B hFE 120 IC=-10mA, VCE =-1V
BCW68G 160 250 400 IC=-100mA, VCE =-1V*
60 IC=-500mA, VCE =-2V*

BCW67C hFE 180 IC=-10mA, VCE =-1V

BCW68H 250 350 630 IC=-100mA, VCE =-1V*
100 IC=-500mA, VCE =-2V*

Transition Frequency fT 100 MHz IC =-20mA, VCE =-10V

f = 100MHz

Collector-Base Capacitance Ccbo 12 18 pF VCBO =-10V, f =1MHz

Emitter-Base Capacitance Cebo 80 pF VEBO=-0.5V, f =1MHz

Noise Figure N 2 10 dB IC= -0.2mA, VCE =- 5V

RG =1KΩ, f=1KH
∆f=200Hz

Switching times:
Turn-On Time ton 100 ns IC=-150mA
Turn-Off Time toff 400 ns IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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 BCW67 SOT23 PNP SILICON PLANAR BCW67
BCW68 MEDIUM POWER TRANSISTORS BCW68
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS –
BCW67A – DA BCW67AR – 4W
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). BCW67B – DB BCW67BR – 5W E
C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67C – DC BCW67CR – 6W
BCW68F – DF BCW68FR – 7T
Collector-Emitter BCW67 V(BR)CEO -32 V ICEO=-10mA BCW68G – DG BCW68GR – 5T B
Breakdown Voltage BCW68 -45 ICEO=-10mA
BCW68H – DH BCW68HR – 7N
BCW67 V(BR)CES -45 IC=-10µA
BCW68 -60 IC=-10µA COMPLEMENTARY TYPES –
SOT23
BCW67 – BCW65
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO =-10µA
BCW68 – BCW66
Collector-Emitter BCW67 ICES -20 nA VCES =-32V
Cut-off Current -10 µA VCES=-32V ,Tamb=150°C
ABSOLUTE MAXIMUM RATINGS.
BCW68 -20 nA VCES =-45V PARAMETER SYMBOL BCW67 BCW68 UNIT
-10 µA VCES=-45V , Tamb=150°C
Collector-Emitter Voltage VCES -45 -60 V
Emitter-Base Cut-Off Current IEBO -20 nA VEBO =-4V Collector-Emitter Voltage VCEO -32 -45 V
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB = -10mA Emitter-Base Voltage VEBO -5 V
-0.7 V IC= -500mA, IB =-50mA* Peak Pulse Current(10ms) ICM -1000 mA
Base-Emitter Saturation Voltage VBE(sat) -2 V IC=-500mA, IB=-50mA* Continuous Collector Current IC -800 mA
Base Current IB -100 mA
Static BCW67A hFE 75 IC=-10mA, VCE =-1V
Forward BCW68F 100 170 250 IC=-100mA, VCE =-1V* Power Dissipation at Tamb=25°C Ptot 330 mW
Current 35 IC=-500mA, VCE =-2V*
Transfer Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW67B hFE 120 IC=-10mA, VCE =-1V
BCW68G 160 250 400 IC=-100mA, VCE =-1V*
60 IC=-500mA, VCE =-2V*

BCW67C hFE 180 IC=-10mA, VCE =-1V

BCW68H 250 350 630 IC=-100mA, VCE =-1V*
100 IC=-500mA, VCE =-2V*

Transition Frequency fT 100 MHz IC =-20mA, VCE =-10V

f = 100MHz

Collector-Base Capacitance Ccbo 12 18 pF VCBO =-10V, f =1MHz

Emitter-Base Capacitance Cebo 80 pF VEBO=-0.5V, f =1MHz

Noise Figure N 2 10 dB IC= -0.2mA, VCE =- 5V

RG =1KΩ, f=1KH
∆f=200Hz

Switching times:
Turn-On Time ton 100 ns IC=-150mA
Turn-Off Time toff 400 ns IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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