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Sipmos Small-Signal Transistor BSS 88: V I R V

This document provides specifications for the BSS 88 small-signal N-channel enhancement mode MOSFET. Key details include: - Maximum ratings of 240V for VDS, 0.25A for continuous ID, and 1.0W for maximum power dissipation. - Electrical characteristics at 25°C include a threshold voltage range of 0.6-1.2V, RDS(on) of 4-8Ω, and turn-on/off times of 10-15ns and 30-40ns respectively. - The device comes in a TO-92 package and is available with different ordering codes and packaging/taping configurations.

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107 views

Sipmos Small-Signal Transistor BSS 88: V I R V

This document provides specifications for the BSS 88 small-signal N-channel enhancement mode MOSFET. Key details include: - Maximum ratings of 240V for VDS, 0.25A for continuous ID, and 1.0W for maximum power dissipation. - Electrical characteristics at 25°C include a threshold voltage range of 0.6-1.2V, RDS(on) of 4-8Ω, and turn-on/off times of 10-15ns and 30-40ns respectively. - The device comes in a TO-92 package and is available with different ordering codes and packaging/taping configurations.

Uploaded by

essen999
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SIPMOS Small-Signal Transistor BSS 88

● VDS 240 V
● ID 0.25 A
● RDS(on) 8 Ω
● VGS(th) 0.6 … 1.2 V
2
● N channel
● Enhancement mode 3 3
2 1
● Logic level 1

Type Ordering Tape and Reel Information Pin Configuration Marking Package
Code 1 2 3
BSS 88 Q62702-S454 bulk G D S BSS 88 TO-92
BSS 88 Q62702-S287 E6288: 1500 pcs/reel; marked
2 reels/carton; gate first SS88

BSS 88 Q62702-S303 E6296: 1500 pcs/reel;


2 reels/carton; source first
BSS 88 Q62702-S576 E6325: 2000 pcs/carton;
Ammopack

Maximum Ratings

Parameter Symbol Values Unit


Drain-source voltage VDS 240 V
Drain-gate voltage, RGS = 20 kΩ VDGR 240
Gate-source voltage VGS ± 14
Gate-source peak voltage, aperiodic Vgs ± 20
Continuous drain current, TA = 25 ˚C ID 0.25 A
Pulsed drain current, TA = 25 ˚C ID puls 1.0
Max. power dissipation, TA = 25 ˚C Ptot 1.0 W
Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C

Thermal resistance, chip-ambient RthJA ≤ 125 K/W


(without heat sink)
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56

Semiconductor Group 275 10.94


BSS 88

Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 240 – –
Gate threshold voltage VGS(th)
VGS = VDS, ID = 1 mA 0.6 0.8 1.2
Zero gate voltage drain current IDSS µA
VDS = 240 V, VGS = 0
Tj = 25 ˚C – 0.1 1.0
Tj = 125 ˚C – 10 100
VDS = 100 V, VGS = 0 nA
Tj = 25 ˚C – – 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 – 10 100
Drain-source on-resistance RDS(on) Ω
VGS = 4.5 V, ID = 0.25 A – 4.0 8
VGS = 1.8 V, ID = 14 mA – 6 15

Dynamic Characteristics
Forward transconductance gfs S
VDS ≥ 2 × ID × RDS(on)max, ID = 0.25 A 0.14 0.32 –
Input capacitance Ciss pF
VGS = 0, VDS = 25 V, f = 1 MHz – 100 135
Output capacitance Coss
VGS = 0, VDS = 25 V, f = 1 MHz – 15 25
Reverse transfer capacitance Crss
VGS = 0, VDS = 25 V, f = 1 MHz – 8 12
Turn-on time ton, (ton = td(on) + tr) td(on) – 5 8 ns
VDD = 30 V, VGS = 10 V, RGS = 50 Ω, ID = 0.28 A t – 10 15
r

Turn-off time toff, (toff = td(off) + tf) td(off) – 40 55


VDD = 30 V, VGS = 10 V, RGS = 50 Ω, ID = 0.28 A t – 30 40
f

Semiconductor Group 276


BSS 88

Electrical Characteristics (cont’d)


at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Continuous reverse drain current IS A
TA = 25 ˚C – – 0.25
Pulsed reverse drain current ISM
TA = 25 ˚C – – 1.0
Diode forward on-voltage VSD V
IF = 0.5 A, VGS = 0 – 0.85 1.3

Package Outline

TO-92

Bulk version Taped version

Dimensions in mm

Semiconductor Group 277


BSS 88

Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C

Typ. output characteristics ID = f (VDS) Typ. drain-source on-resistance


parameter: tp = 80 µs RDS(on) = f (ID)
parameter: VGS

Semiconductor Group 278


BSS 88

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)


parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs

Drain-source on-resistance Typ. capacitances C = f (VDS)


RDS(on) = f (Tj) parameter: VGS = 0, f = 1 MHz
parameter: ID = 0.25 A, VGS = 4.5 V, (spread)

Semiconductor Group 279


BSS 88

Gate threshold voltage VGS(th) = f (Tj) Forward characteristics of reverse diode


parameter: VDS = VGS, ID = 1 mA, (spread) IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)

Drain current ID = f (TA) Drain-source breakdown voltage


parameter: VGS ≥ 5 V V(BR) DSS = b × V(BR)DSS (25 ˚C)

Semiconductor Group 280

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