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AEC Module 3 Notes

The document discusses various oscillator circuits and the Barkhausen criteria for oscillation. It provides details on RC phase shift oscillators, tuned oscillators like Hartley and Colpitts, and crystal oscillators. It also includes the design and component selection for a CE amplifier-based oscillator circuit operating at 1MHz including calculations for the resistor and capacitor component values.

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R Dhirendra Rao
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© © All Rights Reserved
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74 views

AEC Module 3 Notes

The document discusses various oscillator circuits and the Barkhausen criteria for oscillation. It provides details on RC phase shift oscillators, tuned oscillators like Hartley and Colpitts, and crystal oscillators. It also includes the design and component selection for a CE amplifier-based oscillator circuit operating at 1MHz including calculations for the resistor and capacitor component values.

Uploaded by

R Dhirendra Rao
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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/

/ / Impact of Rs and
RL on low frequency response
The input section of the circuit can represented as shown below

For low frequencies, at the input section, f=fLs, R=Rs+Ri, and C=Cs
Hence equation 4 can be written as,

Similarly, For low frequencies at the output section, f=fLs, R=Rs+Ri, and C=Cs
Hence equation 4 can be written as,
Where

In the high frequency region , parasitic capacitances (Cbe, Cbc, Cce) and wiring capacitances
(CWi, CWo) decreases the gain as shown below.

Determining the Thévenin equivalent circuit for the input and output networks of the above

Fig we get
Where
Requirements of oscillations
Barkhausen criteria

Conditions which are required to be satisfied to operate the circuit as an oscillator is called as
“Barkhausen criterion” for sustained oscillations.

The Barkhausen criteria should be satisfied by an amplifier with positive feedback to ensure the
sustained oscillations.

The Barkhausen criterion states that:

• The loop gain is equal to unity in absolute magnitude, that is, | β A | = 1 and

• The total phase shift around the loop is zero or 3600

Consider the ckt shown below

For an oscillation circuit, there is no input signal “Vs”, hence the feedback signal Vf itself should
be sufficient to maintain the oscillations.

The product β A is called as the “loop gain”.

From the circuit we have Vo=AVi ……(1)

And Vf=βVo ……(2)

Substituting (1) in (2) we get

Vf=AβVi …..(3)
When lAβl = 1, Vf acts as Vi and is in phase with Vi.
RC Phase Shift Oscillator

The Barkhausen criteria states that in a positive feedback amplifier to obtain sustained
oscillations, the overall loop gain must be unity ( 1 ) and the overall phase shift must be 0 or 360.

When the power supply is switched on, due to random motion of electrons in passive
components like resistor, capacitor a noise voltage of different frequencies will be developed at
the collector terminal of transistor, out of these the designed frequency signal is fed back to the
amplifier by the feed back network and the process repeats to give suitable oscillation at output
terminal
Tuned Oscillators ( Hartley and Colpitt’s)

Hartley Oscillator
Colpitt’s Oscillator
Crystal Oscillator
A crystal oscillator is an electronic circuit that uses the mechanical resonance of a
vibrating crystal of piezoelectric material to create an electrical signal with a very precise
frequency. This frequency is commonly used to keep track of time (as in quartz wristwatches), to
provide a stable clock signal for digital integrated circuits, and to stabilize frequencies for radio
transmitters and receivers. The most common type of piezoelectric resonator used is the quartz
crystal, so oscillator circuits designed around them were called "crystal oscillators".
Design :
Given, VCE = 5 V and IC = 2 mA Assume  = 100
VCC = 2VCE = 2 X 5 = 10 V
Let VRE = 10% VCC = 1 V
RE = VRE / ( IC + IB )
IB = IC /  = 2mA / 100 = 20 A
RE = 1 / ( 2m + 20 ) = 495, Choose RE = 470 
Apply KVL to collector loop
VCC – IC RC – VCE – VE = 0
RC = ( VCC – VCE – VE ) / IC = ( 10 – 5 – 1 ) / 2 m
RC = 2 K Choose RC = 1.8 K
Let IR1 = 10 IB = 10 X 20 A = 200 A
VR2 = VBE + VE = 0.6 + 1 = 1.6 V ( Since transistor is silicon make VBE = 0.6 V )
R2 = VR1 / ( IR1 – IB ) = 1.6 / ( 200 A - 20 A ) = 8.8 K Choose R2 = 8.2 K
R1 = ( VCC – VR2 ) / IR1 = ( 10 – 1.6 ) / 200 A = 42 K Choose R1 = 47 K
XCE < < RE, XCE = RE / 10
1 / ( 2  f CE ) = 470 / 10
Let f = 1MHz; CE = 33 F Choose CE = 47 F
Choose CC1 = CC2 = 0.1 F; C1=C2=0.001F

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