Ans: : Bipolar Junction Tratisistor (BJT) or transistor is @ three terminal solid state semiconductor device. It is basically a seniconduetor erystal formed by joining two PN junction back to back. These junctions are arariged such that, one type of Semiconductor layer (n-type or p-type) is sandwiched between two layers of the opposite type of semiconductor. The term “bipolar” in the name indicates the involvement of both majority and minority carries in its operation. BJTsare classified into two types as, 1 PNP 2_NPN. @2._ Why BJT is called as current controlled device? ‘i ‘Ans: Pao Model Papers, Qi(e) ‘A bipolar junction transistor is called current controlled device. Since, the output current is controlled by input current ie, the current at output terminal depends on current at input terminal. Q3. Draw the common base configuration. Ans: : ‘Ari NPN tratsistor arranged in Common Base (CB) configuration is aé shown in figure below.” ly Ie . Base grounded ‘ah Figure: CB Configuration 4. Tha transistor has a a of 0.97, find the value of B. . Ans: Z Given that, lotr For a transistor, ‘Common base‘current Common‘emitter current gai B= SPECTRUM @LLINONE JOURNAL FOR ENGINEERING STUD! gain, = 0.97, :1CS [JNTU-HYDERABAp, a : ANALOG-AND DIGITAL ELECTRON! ‘The relation between the transistor Gurren gains and Pi given bYs ne “ 0.97 “ 097 32.33, * [CB-cuitent gain, p= 3233] | OS. Atransistor has § ="150, find the collector and base current, #I,=40™MA: + Ans: .* Given that, 7 ' Fora transistor, 5 ge 3 : : Current gain, B= 150 3 # Emitter current, /,= 10 mA. Base current, Collector current, ‘The relation between base curreht and emitter current is given by, 1, = (+ By, te * 1+B Substituting the values of /, and B, we get, it 10107 4 1150 = 66.22 pA The value of collector current J, is determined as, 1.=Bl, : = 66,22 x 10x 150 = 9.93 mA [Collector current, 7, = 9.93 mA| List the applications of transistor. ‘The following are the basic-applications of transistor. 1, Itis used in amplifier cireuit "2. Its used in oscillator circuits. : 3. It is used as a switch in digital circuits. Itfinds many applications in computers, sstelites and modem communication system Look for the SIA. GROUP. LoGo onthe TITLE coy ie ER before > snore you. buy.G7. Whatis operating point? = Model Papers, amt@) ‘The zero signal collector current and ein she ouput Occurs across this point, 7 sitter - collector voltage are known as the operating point. Since the variations in ied gu operating point. Another name for this points “Quiescent point” (ot) Q-point onthe DC load line. Poli for amplification, the ténsistor stays a this pot ilently. This pola ie denoted by “Q” a8. - What is meant by biasing? a‘ Ans? For the transistor to act as an ampli it must be operated in its active region. The method of applying exteral voltages: ‘known as biasing, For achieving a perfect amplification in amplifier circuit proper to operate the transistor in the active region is biasing is needed. 9,, What is meant by stabil nm. ‘Ans: The operating point of a transistor acting as an amplifier shifts maily with changes in Jc, B and V,,-‘The process of making the operating point independent of /.., B and V,_is known as stabilization. Q10. Define Stability factors of a transistor. Ans: The rate of change of collector current (J) with respect to collector leakage current (Ij,) at constant values of Vygand Bo iscaled stability factor S, ae Stability factor, $= ability factor, $= 57 - \ Q11, List out the three stability factor, Ans: The three stability factors of a transistor are defined as follows.” ak 1 $m.975>.4"Iy’ constant Igy» te cons BEE pe consis | ae ae a Vg are constants. | Q12, What is diode compensation? < | e Model Papers, ata) Died compenssionisamethodofsabilcigtansisorcisitby replacing tasitor witha diodchavingsametempiratire sharacterisies. | unaway océuts in a transistor?” 13. How thermal ri Ans: The general expression for eollector eurrent ofa transistor circuit active region is, I, sl, +(1 + B)Lox0 sa vabd pe! siatigsetir organ Astietamjani increas dvs hole to tse junction, te eve saturn didnt neat is oubled foevery 10°C rise in temperature, Which uses damage to transistor, This phenomenon is known as therthal runaw eee SGINEERING STUDENTS SPECTROM ALLAN-ONE JOURNAL FOR ENGINEERING STUDENTS "57. GROUP wu P00 TL esat ANALOG AND DIGITAL ELECTRONICS [JNT! Q14. Define the four h-parameters, j Ans: of BJT and FET amplifiers. Hybrid parameters or h-parameters are used to analyse the characteris ‘The h-parameters of an amplifiers are defined as follows. y= VI | shy =i, 1, Input Ampedance, h,: Iti the ratio of input voltage to input current 2 Output Admittance, h,,: Its the ratio of output current to input voltage 3. Reverse Voltage Gain, h,,* It is the ratio of input voltage to output voltage i.e., hy, = V/¥, \ yo Forward Current Gain, h, Its the ratio of output current to input current ise. fy, = Ji, Q15. Draw the small signal model of BJT device. ‘Ans: The small signal model of BIT at low-frequency is illustrated in figure below. Figure: Small Signal Model of BJT Q16._ Compare the characteristics of CE, CB and CC amplifiers. Ans: Model Papert ‘The comparison between the characteristics of CE, CB and CC amplifiers is mentioned below. CE - cB cc 1. | Current gain ‘is high 1. | Current gain is less than one L Current gain is large 2. | Voltage gain is high 2. | Voltage gain is very large 2, ‘Voltage gain is approximately one 3. | Power gain is also high © 3. | Power gain is nearly equal 3. Power gain is since A, and A, are large. to voltage gain current gain approximately equal to. 4, | The phase shift in output 4, | No phase shiftin output 4 No phase shift in ouput ‘is 180° Q17.. Why h-parameter model is not suitable for the analysis of high frequency response of the amplifier? Ans: ‘The h-parameter mode is suitable only to analyze low frequency response of amplifiers, This analysis is carried out by neglecting the effect of shunt capacitance in the transistor due to instantaneous response to variations in pis is sani tone Itis not suitable forthe analysis of high frequency response of the amplifier because, brie ‘The values of h-parameters become complex at high frequencies, ‘At high Sequences the value of-parameters change and hence itis required to analyze the trans easier y transistor at ea range of frequeny. In practice it isnot posible to analyze the transistor at each nn every range of freq quenc) Look for the SIA GROUP LOGO, QB on the Tre COVER before you b y iy @ 4wrzenm (Q18. What is cascaded ‘Ans: The transistor circuit which i ; alii or cicaded employ involves more than one stage (or) multiple stages of am ‘The block schematic of a multistage amplifier is shown in figure below. ‘Stage Siage ‘Sage . f A) a] (AY a w Figure : Multistage Amplifier : a ee ‘The overall gain of a multistage amplifier is the product of gain of individual stages. r ie ABA) XA, Kd, 4 Ya Vin” Voir * Q19. Write down the need of cascading the amplifiers. Ans: Amplification ‘capacity of a single stage amplifier is limited and cannot meet the required amplifier uses limited transistor parameters because of which it cannot provide very high voltage ‘does not match its input impedance with the source anid output impedance with the load. Tnorder to overcome these limitations, two or more single tage amplifier are connected in cascade, The cascade connection ., multistage amplifiers) provides desired amplification. Model Papert, 16) specifications. A single stage ‘and current gains and also it of amplifiers ( 20. A multistage amplifier employs five stages each of which has a power gain of 30. of the amplifier in dB? Ans: Given that, ‘The power gain of each stage in a five-stage amplifier is, : ‘What is the total gain 1to5 0, Total gain, Ay? ‘The overall gain; A, of an n-stage amplifier is given as, Ay Ay Ap * Ang Ary Here n=5 Aya dng ® An AE yy” Bi = 30 30 30 x 30 * 30 : Ay = 243 * 10° . +: Total gain; A, = 243 * 10° SPECTROM ag GLLINFONE JOGRNAL FOR ENGINEERING STUDENTS sd i SIA GROUP we